Patents by Inventor Satoru Murakami
Satoru Murakami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9091922Abstract: A resin composition for forming a resist underlayer film includes a resin that includes an aromatic ring, and a crosslinking agent having a partial structure represented by a following formula (i). X represents an oxygen atom, a sulfur atom, *—COO— or —NRA—. R1 represents a hydrogen atom or a C1-30 monovalent hydrocarbon group. R2 represents a hydroxy group, a sulfanil group, a cyano group, a nitro group, a C1-30 monovalent hydrocarbon group, a C1-30 monovalent oxyhydrocarbon group or a C1-30 monovalent sulfanilhydrocarbon group. p is an integer of 1 to 3.Type: GrantFiled: December 14, 2012Date of Patent: July 28, 2015Assignee: JSR CORPORATIONInventors: Shin-ya Nakafuji, Satoru Murakami, Kazuhiko Koumura, Yuushi Matsumura, Masayuki Motonari, Katsuhisa Mizoguchi
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Publication number: 20150198882Abstract: A composition for forming a resist underlayer film includes a polymer having a structural unit represented by a formula (1). Ar1, Ar2, Ar3 and Ar4 each independently represent a divalent aromatic hydrocarbon group or a divalent heteroaromatic group. A part or all of hydrogen atoms included in the divalent aromatic hydrocarbon group and the divalent heteroaromatic group represented by Ar1, Ar2, Ar3 or Ar4 may be substituted. R1 represents a single bond or a divalent hydrocarbon group having 1 to 20 carbon atoms. A part or all of hydrogen atoms included in the divalent hydrocarbon group represented by R1 may be substituted. The divalent hydrocarbon group represented by R1 may have an ester group, an ether group or a carbonyl group in a structure thereof. Y represents a carbonyl group or a sulfonyl group. m is 0 or 1. n is 0 or 1.Type: ApplicationFiled: May 29, 2014Publication date: July 16, 2015Applicant: JSR CORPORATIONInventors: Shin-ya NAKAFUJI, Satoru MURAKAMI, Yoshio TAKIMOTO, Kazuhiko KOMURA, Masayuki MOTONARI, Katsuhisa MIZOGUCHI
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Publication number: 20150197664Abstract: A composition for forming a resist underlayer film includes (A) a compound. The compound (A) includes a group represented by formula (1). R represents a monovalent organic group having 1 to 30 carbon atoms. The monovalent organic group represented by R does not include an oxygen atom at an end of the side adjacent the sulfur atom. * represents a bonding hand. The compound (A) preferably includes a ring which is an aromatic ring, a heteroaromatic ring, or a combination thereof. The bonding hand denoted by * in the group represented by the formula (1) is preferably linked directly or via an oxygen atom to the ring.Type: ApplicationFiled: March 26, 2015Publication date: July 16, 2015Applicant: JSR CORPORATIONInventors: Shin-ya MINEGISHI, Shin-ya Nakafuji, Satoru Murakami, Toru Kimura
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Patent number: 9046769Abstract: Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.Type: GrantFiled: September 4, 2014Date of Patent: June 2, 2015Assignee: JSR CORPORATIONInventors: Yushi Matsumura, Shinya Minegishi, Satoru Murakami, Yusuke Anno, Shinya Nakafuji, Kazuhiko Komura, Kyoyu Yasuda
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Patent number: 9040232Abstract: Provided by the present invention is a method including: (1) forming a resist underlayer film on the upper face side of a substrate to be processed using a composition for forming a resist underlayer film, the composition containing (A) a compound having a group represented by the following formula (1); (2) forming a resist coating film by applying a resist composition on the resist underlayer film; (3) exposing the resist coating film by selectively irradiating the resist coating film with a radiation; (4) forming a resist pattern by developing the exposed resist coating film; and (5) forming a predetermined pattern on the substrate to be processed by sequentially dry etching the resist underlayer film and the substrate using the resist pattern as a mask.Type: GrantFiled: September 28, 2011Date of Patent: May 26, 2015Assignee: JSR CORPORATIONInventors: Shin-ya Minegishi, Shin-ya Nakafuji, Satoru Murakami, Toru Kimura
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Patent number: 9029069Abstract: A resist underlayer film-forming composition includes a polymer including a structural unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of from 3000 to 10000, and a solvent. Each of R3 to R8 independently represents a group shown by a formula (2), a hydrogen atom, a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkoxycarbonyl group having 2 to 10 carbon atoms, an aryl group having 6 to 14 carbon atoms, or a glycidyl ether group having 3 to 6 carbon atoms, wherein at least one of R3 to R8 represents the group shown by the formula (2).Type: GrantFiled: March 29, 2012Date of Patent: May 12, 2015Assignee: JSR CorporationInventors: Shin-ya Minegishi, Yushi Matsumura, Shinya Nakafuji, Kazuhiko Komura, Takanori Nakano, Satoru Murakami, Kyoyu Yasuda, Makoto Sugiura
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Patent number: 8922075Abstract: According to one embodiment, an electric motor includes a stator, a rotor, bearings and a rotor shaft, in a frame, supporting surfaces on the rotor, and a plurality of threaded holes in the frame, which are configured to receive bolts for pressing the support surfaces from outside.Type: GrantFiled: June 2, 2014Date of Patent: December 30, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Nobuyuki Yagi, Satoru Murakami
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Publication number: 20140371466Abstract: Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.Type: ApplicationFiled: September 4, 2014Publication date: December 18, 2014Applicant: JSR CorporationInventors: Yushi Matsumura, Shinya Minegishi, Satoru Murakami, Yusuke Anno, Shinya Nakafuji, Kazuhiko Komura, Kyoyu Yasuda
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Patent number: 8871432Abstract: A pattern-forming method includes: (1) a resist underlayer film-forming step of providing a resist underlayer film on an upper face side of a substrate by coating a resist underlayer film-forming composition containing a resin having a phenolic hydroxyl group; (2) a resist pattern-forming step of forming a resist pattern on an upper face side of the resist underlayer film; (3) a pattern-forming step of dry etching at least the resist underlayer film and the substrate, with the aid of the resist pattern as a mask to form a pattern on the substrate; and (4) a resist underlayer film-removing step of removing the resist underlayer film on the substrate with a basic solution, in the order of (1) to (4).Type: GrantFiled: March 28, 2013Date of Patent: October 28, 2014Assignee: JSR CorporationInventors: Shin-ya Minegishi, Satoru Murakami, Yushi Matsumura, Kazuhiko Komura, Yoshio Takimoto, Shin-ya Nakafuji, Kyoyu Yasuda
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Patent number: 8859185Abstract: A resist underlayer film-forming composition includes a polymer including a repeating unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and a solvent. Each of R3 to R8 individually represent a group shown by the following formula (2) or the like. R1 represents a single bond or the like. R2 represents a hydrogen atom or the like.Type: GrantFiled: July 22, 2013Date of Patent: October 14, 2014Assignee: JSR CorporationInventors: Shin-ya Minegishi, Yushi Matsumura, Shinya Nakafuji, Kazuhiko Komura, Takanori Nakano, Satoru Murakami, Kyoyu Yasuda, Makoto Sugiura
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Patent number: 8859191Abstract: Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.Type: GrantFiled: May 8, 2012Date of Patent: October 14, 2014Assignee: JSR CorporationInventors: Yushi Matsumura, Shinya Minegishi, Satoru Murakami, Yusuke Anno, Shinya Nakafuji, Kazuhiko Komura, Kyoyu Yasuda
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Publication number: 20140272722Abstract: A composition for forming a resist underlayer film includes a polymer having a structural unit represented by a formula (1). Ar1, Ar2, Ar3 and Ar4 each independently represent a divalent aromatic hydrocarbon group or a divalent heteroaromatic group. A part or all of hydrogen atoms included in the divalent aromatic hydrocarbon group and the divalent heteroaromatic group represented by Ar1, Ar2, Ar3 or Ar4 may be substituted. R1 represents a single bond or a divalent hydrocarbon group having 1 to 20 carbon atoms. A part or all of hydrogen atoms included in the divalent hydrocarbon group represented by R1 may be substituted. The divalent hydrocarbon group represented by R1 may have an ester group, an ether group or a carbonyl group in a structure thereof. Y represents a carbonyl group or a sulfonyl group. m is 0 or 1. n is 0 or 1.Type: ApplicationFiled: May 29, 2014Publication date: September 18, 2014Applicant: JSR CORPORATIONInventors: Shin-ya NAKAFUJI, Satoru MURAKAMI, Yoshio TAKIMOTO, Kazuhiko KOMURA, Masayuki MOTONARI, Katsuhisa MIZOGUCHI
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Patent number: 8786148Abstract: According to one embodiment, an electric motor includes a stator, a rotor, bearings and a rotor shaft, in a frame, supporting surfaces on the rotor, and a plurality of threaded holes in the frame, which are configured to receive bolts for pressing the support surfaces from outside.Type: GrantFiled: August 15, 2012Date of Patent: July 22, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Nobuyuki Yagi, Satoru Murakami
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Publication number: 20140014620Abstract: A resin composition for forming a resist underlayer film includes a resin that includes an aromatic ring, and a crosslinking agent having a partial structure represented by a following formula (i). X represents an oxygen atom, a sulfur atom, *—COO— or —NRA—. R1 represents a hydrogen atom or a C1-30 monovalent hydrocarbon group. R2 represents a hydroxy group, a sulfanil group, a cyano group, a nitro group, a C1-30 monovalent hydrocarbon group, a C1-30 monovalent oxyhydrocarbon group or a C1-30 monovalent sulfanilhydrocarbon group. p is an integer of 1 to 3.Type: ApplicationFiled: December 14, 2012Publication date: January 16, 2014Applicant: JSR CORPORATIONInventors: Shin-ya NAKAFUJI, Satoru MURAKAMI, Kazuhiko KOUMURA, Yuushi MATSUMURA, Masayuki MOTONARI, Katsuhisa MIZOGUCHI
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Publication number: 20130310514Abstract: A resist underlayer film-forming composition includes a polymer including a repeating unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and a solvent. Each of R3 to R8 individually represent a group shown by the following formula (2) or the like. R1 represents a single bond or the like. R2 represents a hydrogen atom or the like.Type: ApplicationFiled: July 22, 2013Publication date: November 21, 2013Applicant: JSR CorporationInventors: Shin-ya MINEGISHI, Yushi MATSUMURA, Shinya NAKAFUJI, Kazuhiko KOMURA, Takanori NAKANO, Satoru MURAKAMI, Kyoyu YASUDA, Makoto SUGIURA
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Publication number: 20130241329Abstract: According to one embodiment, an electric motor includes a stator, a rotor, bearings and a rotor shaft, in a frame, supporting surfaces on the rotor, and a plurality of threaded holes in the frame, which are configured to receive bolts for pressing the support surfaces from outside.Type: ApplicationFiled: August 15, 2012Publication date: September 19, 2013Inventors: Nobuyuki Yagi, Satoru Murakami
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Patent number: 8513133Abstract: A resist underlayer film-forming composition includes (A) a polymer that includes a repeating unit shown by a formula (1), and has a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and (B) a solvent, wherein R3 to R8 individually represent a group shown by the following formula (2) or the like, —O—R1?R2??(2) wherein R1 represents a single bond or the like, and R2 represents a hydrogen atom or the like.Type: GrantFiled: August 30, 2011Date of Patent: August 20, 2013Assignee: JSR CorporationInventors: Shin-ya Minegishi, Yushi Matsumura, Shinya Nakafuji, Kazuhiko Komura, Takanori Nakano, Satoru Murakami, Kyoyu Yasuda, Makoto Sugiura
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Publication number: 20120285929Abstract: Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.Type: ApplicationFiled: May 8, 2012Publication date: November 15, 2012Applicant: JSR CorporationInventors: Yushi MATSUMURA, Shinya Minegishi, Satoru Murakami, Yusuke Anno, Shinya Nakafuji, Kazuhiko Komura, Kyoyu Yasuda
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Publication number: 20120270157Abstract: A resist underlayer film-forming composition includes a polymer including a structural unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of from 3000 to 10000, and a solvent. Each of R3 to R8 independently represents a group shown by a formula (2), a hydrogen atom, a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkoxycarbonyl group having 2 to 10 carbon atoms, an aryl group having 6 to 14 carbon atoms, or a glycidyl ether group having 3 to 6 carbon atoms, wherein at least one of R3 to R8 represents the group shown by the formula (2).Type: ApplicationFiled: March 29, 2012Publication date: October 25, 2012Applicant: JSR CorporationInventors: Shin-ya Minegishi, Yushi Matsumura, Shinya Nakafuji, Kazuhiko Komura, Takanori Nakano, Satoru Murakami, Kyoyu Yasuda, Makoto Sugiura
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Publication number: 20120252217Abstract: A resist underlayer film-forming composition includes (A) a polymer that includes a repeating unit shown by a formula (1), and has a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and (B) a solvent, wherein R3 to R8 individually represent a group shown by the following formula (2) or the like, —O—R1?R2 ??(2) wherein R1 represents a single bond or the like, and R2 represents a hydrogen atom or the like.Type: ApplicationFiled: August 30, 2011Publication date: October 4, 2012Applicant: JSR CorporationInventors: Shin-ya MINEGISHI, Yushi MATSUMURA, Shinya NAKAFUJI, Kazuhiko KOMURA, Takanori NAKANO, Satoru MURAKAMI, Kyoyu YASUDA, Makoto SUGIURA