Abstract: Provided by the present invention is a method including: (1) forming a resist underlayer film on the upper face side of a substrate to be processed using a composition for forming a resist underlayer film, the composition containing (A) a compound having a group represented by the following formula (1); (2) forming a resist coating film by applying a resist composition on the resist underlayer film; (3) exposing the resist coating film by selectively irradiating the resist coating film with a radiation; (4) forming a resist pattern by developing the exposed resist coating film; and (5) forming a predetermined pattern on the substrate to be processed by sequentially dry etching the resist underlayer film and the substrate using the resist pattern as a mask.

Abstract: A conductive film is processed in a first etching step, and thinned by reprocessing using light ashing. An exposed portion of an insulating film is etched away in the film thickness direction, thereby forming a step on the insulating film. Impurity ions are implanted into a semiconductor layer.

Abstract: It is an object of the invention to provide a spin finish generating neither tar nor scum in false twisting treatment either of the hot plate contact heating type or of the non-contact heating type using a radiation type high temperature heater and thus enabling long term stable false twisting treatment. This invention provides a spin finish for synthetic fibers which satisfies the following relations (1) and (2): 10≦T≦22  (1) 0≦Re≦0.25  (2) where T is the surface tension (mN/m) of the oil after allowing the same to stand at 220° C. for 1 hour and Re is the percent residue (% by weight) on heating of the oil after allowing the same to stand at 400° C. for 24 hours.

Abstract: The invention relates to an image sensor for use in the facsimile device, image reader, digital scanner and the like. In this image sensor, the photodiodes and blocking diodes formed on an insulating board are insulated by a transparent interlayer insulating film and are connected in series and opposite polarity by coupling electrodes through contact holes in the transparent interlayer insulating film. This image sensor features a high reading speed and a low dark output noise.

Abstract: An image reading apparatus and method in which a plurality of photoelectric energy converting elements disposed in a one-dimensional array is divided every m elements into n first blocks B.sub.1, B.sub.2, . . . , B.sub.n, driving voltages are applied sequentially to the units of m photoelectric energy converting elements in the first blocks B.sub.1, B.sub.2, . . . , B.sub.n, and the electrical signals of the photoelectric energy converting elements are read out. The drive side on which the driving voltage is sequentially applied to the above-mentioned divided n first blocks, B.sub.1, B.sub.2, . . . , B.sub.n is further divided every x first blocks into y second blocks C.sub.1, C.sub.2, . . . , C.sub.y, and are provided a first voltage application means which applies a first driving voltage (D1, D2, . . . , Dy) in sequence to the units of x first blocks B.sub.1, B.sub.2, . . . , B.sub.x in the second blocks C.sub.1, C.sub.2, . . . , C.sub.

Abstract: The invention seeks to reduce residual image in the vertical direction, which is the most significant drawback in the charge storage system, and further to permit increased speed of operation to be obtained.To this end, an image sensor of matrix drive type according to the invention comprises m by n diode pairs each including a photo- and a blocking diode PD and BD with the cathode electrodes thereof connected in series, the diode pairs constituting n blocks B.sub.1,B.sub.2 . . . , Bn each of m diode pairs. A clamp diode CD is connected to the juncture between the photo- and blocking diodes PD and BD in each diode pair to clamp the potential on the juncture and thus permit complete and quick charging of the capacitance of the photo-diode PD.

Abstract: In a light sensitive semiconductor unit having a plurality of light sensitive semiconductor cells connected in series, the light receiving area or size of the light sensitive semiconductor cells is increased as the distance from the center of the unit increases so that every light sensitive semiconductor cell can generate generally equal short circuit current even if the light intensity is decreased as the distance between the light sensitive semiconductor cell and light source increases, whereby a high operating voltage can be obtained.

Abstract: A semiconductor light beam position sensor element comprises a semiconductor layer of successively formed p-, i- and n-type semiconductor layers and an electrically conductive layer on either side of the semiconductive layer. At least one of the conductive layers is made of a transparent material, and at least the other conductive layer and the semiconductor layer are provided with a plurality of common apertures extending in the thickness direction. At least one of the conductor layers is provided with one or two pairs of electrodes of opposite polarity and positioned in its marginal regions. The sensor element is light transparent. A feedback circuit is provided to insure that the incident light is constant.

Abstract: In an X ray detecting device comprising XL converting unit for converting the X rays into visible light corresponding to the intensity of the X rays and a LE converting unit for converting the visible light into an electrical signal corresponding to the intensity of the visible light, the base layer of the LE converting unit is formed of a material such that the base layer does not substantially absorb the X rays so that the image of the LE converting unit does not appear on the picture of the object.

Abstract: A photo sensor array includes at least one transparent substrate and a photo sensitive portion provided on the substrate. An optical fiber portion is arranged in a transparent substrate whereinto light from a radiating portion enters. An optical unit or selfoc lens for transferring an image to a photo sensor portion can be omitted so that the device can be miniaturized. A reader utilizing the above photo sensor array is also disclosed.

Abstract: A transparent semiconductor light beam position sensor element comprises a semiconductor layer consisting of p-, i- and n-type semiconductor layers successively bonded in junction and an electrically conductive layer disposed on either side of the semiconductive layer, at least one of the conductive layers being material transparent material, at least the other conductive layer and the semiconductor layer being provided with a multiplicity of common apertures running in the thickness direction and at least one conductive layer being provided with one pair or two pairs of electrodes of opposite polarities as disposed in its marginal regions.

Abstract: A color sensor of the present invention is a semiconductor element comprising a semiconductor wherein a plurality of pn or pin junctions are laminated, and conductive layers which are laminated on both surfaces of the semiconductor, characterized in that the semiconductor element is arranged in a way that the quantity of production of photocarriers is increased in order from the light incident side for the whole wave length band to be measured, and that value of current is detected by changing voltage between both conductivity layers. According to the color sensor of the present invention, the construction can be simplified, it is easily integrated and large-scaled, manufacturing process can be simplified, and the yield of color sensors increases, so that there can be realized a color sensor with low cost.