Abstract: A dry-etching method comprises the step of dry-etching a metal thin film as a chromium-containing half-tone phase-shift film, wherein the method is characterized by using, as an etching gas, a mixed gas including (a) a reactive ion etching gas, which contains an oxygen-containing gas and a halogen-containing gas, and (b) a reducing gas added to the gas component (a), in the process for dry-etching the metal thin film. The dry-etching method permits the production of a half-tone phase-shift photomask by forming patterns to be transferred to a wafer on a photomask blank for a chromium-containing half-tone phase-shift mask. The photomask can in turn be used for manufacturing semiconductor circuits. The method permits the decrease of the dimensional difference due to the coexistence of coarse and dense patterns in a plane and the production of a high precision pattern-etched product.

Abstract: According to this invention, when initialization of a storage medium such as a flash memory is erase of the data area, the processing can be stopped. When the processing is stopped, at least initialization of the management area has been completed, and processing using the storage medium can be executed. If erase processing is not stopped but proceeds to the end, no erase processing need be performed in writing new data, and high-speed write is promised. For this purpose, when complete formatting is designated, the management area of the file system is first initialized. Then, erase processing for the data area of the file system is executed by a predetermined block size. If it is determined that stop is designated during the data area erase processing, the processing ends, but the management area has already been initialized.

Abstract: A hydrogen-permeable membrane includes a permeable layer which has a function of making hydrogen permeate therethrough, and a catalyst layer which acts as a catalyst for promoting permeation of the hydrogen in the permeable layer. An area of the catalyst layer which contacts gas is larger than an area of the permeable layer.

Abstract: A plurality of sets of circuits are provided, each of which generates an impedance code through the use of an impedance control circuit in association with a resistive element connected to an external terminal, and each of which varies the impedance in accordance with such an impedance code. The impedance control circuit includes an impedance comparator which is formed equivalently to the resistive element and the plurality of sets of circuits, and which performs an impedance comparison with each of a plurality of replica circuits to form an up signal that increases the impedance and a down signal that decreases the impedance. Counters are provided adjacent to the individuals of the plurality of sets of circuits to thereby generate the impedance codes in response to the up signal and the down signal.

Abstract: A chromium-containing half-tone phase-shift photomask comprising coarse and dense patterns coexisting in a plane is prepared by a series of pattern-forming steps including forming a resist layer on a photomask blank, exposing and patterning said resist layer, developing, etching said photomask blank and removing said resist layer. Patterns for transferring onto a wafer are formed on the photomask blank by a dry-etching method comprising dry-etching a chromium-containing half-tone phase-shift film utilizing etching gas comprised of mixed gas including (a) reactive ion etching gas, containing an oxygen-containing gas and a halogen-containing gas, and (b) reducing gas added to the gas component (a).

Abstract: The fuel cell system according to the present invention comprises a reformer 12 for receiving a hydrocarbon fuel supply and generating a hydrogen-containing reformed gas by making use of a reforming reaction; a fuel cell assembly 14 for generating power after causing an anode to receive the reformed gas and causing a cathode to receive an oxygen-containing cathode gas; cathode off-gas supply flow path 20 for supplying a cathode off-gas, which is discharged from the cathode, to the reformer 12; and bypass flow path 24 for bypassing the cathode and directly supplying the cathode gas to the reformer 12 at the time of system warm-up.

Abstract: A phase shift mask includes a quartz substrate having a main surface partially dug, and a Cr film deposited on the main surface. The dug portion includes an undercut provided such that the Cr film partially serves as an eaves, and the Cr film has a ? opening exposing a portion of the dug portion, and a first subopening exposing an end of the dug portion.

Abstract: A light shielding film, a halftone film, an etching stopper film and a transparent substrate are dry etched to form a hole penetrating the films and extending in the substrate through a main surface thereof to a prescribed depth. The etching stopper film is formed of a material significantly high in selectivity relative to the substrate under a condition for etching the substrate. This prevents the etching stopper film and the substrate in the step of etching the substrate from being etched to extend a geometry of a pattern in a direction parallel to the substrate's main surface.

Abstract: In an image sensing apparatus having a zoom lens, a zoom ring that designates driving of the zoom ring at the time of image sensing, a power switch, and a zoom controller of the zoom lens that is capable of changing a driving speed of the zoom lens, it is determined whether or not operation of the zoom ring is performed in combination with predetermined operation of the power switch. In a case where the operation is performed in combination, the driving direction of the zoom lens designated by the zoom ring is detected, and driving of the zoom lens is continued in the detected driving direction during performance of the predetermined operation of the power switch irrespective of continuation or discontinuation of the zoom ring operation.

Abstract: A dry-etching method comprises the step of dry-etching a metal thin film as a chromium-containing film, wherein the method is characterized by using, as an etching gas, a mixed gas including (a) a reactive ion etching gas, which contains an oxygen-containing gas and a halogen-containing gas, and (b) a reducing gas added to the gas component (a), in the process for dry-etching the metal thin film. The dry-etching method permits the production of a photomask by forming patterns to be transferred to a wafer on a photomask blank. The photomask can in turn be used for manufacturing semiconductor circuits. The method permits the decrease of the dimensional difference due to the coexistence of coarse and dense patterns in a plane and the production of a high precision pattern-etched product.

Abstract: A plurality of sets of circuits are provided, each of which generates an impedance code through the use of an impedance control circuit in association with a resistive element connected to an external terminal, and each of which varies the impedance in accordance with such an impedance code. The impedance control circuit includes an impedance comparator which is formed equivalently to the resistive element and the plurality of sets of circuits, and which performs an impedance comparison with each of a plurality of replica circuits to form an up signal that increases the impedance and a down signal that decreases the impedance. Counters are provided adjacent to the individuals of the plurality of sets of circuits to thereby generate the impedance codes in response to the up signal and the down signal.

Abstract: A dry-etching method comprises the step of dry-etching a metal thin film as a chromium-containing half-tone phase-shift film, wherein the method is characterized by using, as an etching gas, a mixed gas including (a) a reactive ion etching gas, which contains an oxygen-containing gas and a halogen-containing gas, and (b) a reducing gas added to the gas component (a), in the process for dry-etching the metal thin film. The dry-etching method permits the production of a half-tone phase-shift photomask by forming patterns to be transferred to a wafer on a photomask blank for a chromium-containing half-tone phase-shift mask. The photomask can in turn be used for manufacturing semiconductor circuits. The method permits the decrease of the dimensional difference due to the coexistence of coarse and dense patterns in a plane and the production of a high precision pattern-etched product.

Abstract: The object of the invention is to prevent reduction of hydrogen permeability and deterioration of a hydrogen separation member in a hydrogen separation device that uses an oxygen-containing as like a cathode off gas as a purge gas. A hydrogen separation device 50 includes a reformed gas passage 51, a purge gas passage 52, and a hydrogen separation membrane 53. A supply of a reformed gas flows through the reformed gas passage 51. A cathode off gas discharged from cathodes of fuel cells 60 flows through the purge gas passage 52 to carry hydrogen transmitted through the hydrogen separation membrane 53 to anodes of the fuel cells 60. A specific section of the hydrogen separation membrane 53 close to the supply of the cathode off gas has enhanced heat resistance.

Abstract: A fuel reforming apparatus includes a premixed fuel tank. In the premixed fuel tank, premixed fuel which is formed by emulsifying gasoline and water that are mixed with each other at a predetermined ratio, using a emulsifier. The premixed fuel is sprayed into a vaporizing portion through a nozzle. Heat can be supplied to the vaporizing portion by the reformer in which oxidation reaction proceeds, a first heating portion, and air supplied to the vaporizing portion through a heat exchanger. The premixed fuel sprayed into the vaporizing portion is vaporized immediately by the thus supplied heat, and is supplied to the reformer. In addition, air which has been humidified in a humidifying module cam be supplied to the vaporizing portion.

Abstract: In a fuel reforming apparatus having a reformer for reforming a raw fuel containing a hydrocarbon-containing compound so as to produce a hydrogen-rich fuel gas for use in a fuel cell, a carbon removal process for removing carbon deposited on a reforming catalyst contained in the reformer is executed by controlling the amount of the raw fuel supplied to the reformer and the amount of the oxygen supplied to the reformer so that a ratio of the number of oxygen atoms O supplied to the reformer to the number of carbon atoms supplied to the reformer becomes larger than an appropriate range of the O/C ratio that is to be established during a normal operation of the reformer.

Abstract: A power system of the invention includes fuel cells and a fuel gas generation system that generates a fuel gas to be supplied to the fuel cells. At the time of stopping supply of hydrogen, the fuel gas generation system selectively uses a stop process that replaces hydrogen in a hydrogen separator unit with the air for removal of hydrogen and a pause process that allows hydrogen to remain in the hydrogen separator unit. The stop process is selected when the fuel gas generation system stops the supply of hydrogen for a long time period. The pause process is selected when the fuel gas generation system temporarily stops the supply of hydrogen. The arrangement of the invention desirably shortens a restart time of the fuel gas generation system and reduces a potential energy loss.

Abstract: In a fuel cell system 10, a cracking unit 20 is provided upstream of a reformer 36. When the cracking unit 20 is supplied with oxygen and gasoline as a hydrocarbon-based fuel, the gasoline is partially oxidized and decomposed using oxidation-generated heat to give a hydrocarbon with a lower carbon number. The hydrocarbon with the lower carbon number obtained by such gasoline pyrolysis is fed to the reformer 36 and supplied to a reforming reaction zone.

Abstract: A dry-etching method comprises the step of dry-etching a metal thin film as a chromium-containing half-tone phase-shift film, wherein the method is characterized by using, as an etching gas, a mixed gas including (a) a reactive ion etching gas, which contains an oxygen-containing gas and a halogen-containing gas, and (b) a reducing gas added to the gas component (a), in the process for dry-etching the metal thin film. The dry-etching method permits the production of a half-tone phase-shift photomask by forming patterns to be transferred to a wafer on a photomask blank for a chromium-containing half-tone phase-shift mask. The photomask can in turn be used for manufacturing semiconductor circuits. The method permits the decrease of the dimensional difference due to the coexistence of coarse and dense patterns in a plane and the production of a high precision pattern-etched product.

Abstract: A dry-etching method comprises the step of dry-etching a metal thin film as a chromium-containing half-tone phase-shift film, wherein the method is characterized by using, as an etching gas, a mixed gas including (a) a reactive ion etching gas, which contains an oxygen-containing gas and a halogen-containing gas, and (b) a reducing gas added to the gas component (a), in the process for dry-etching the metal thin film. The dry-etching method permits the production of a half-tone phase-shift photomask by forming patterns to be transferred to a wafer on a photomask blank for a chromium-containing half-tone phase-shift mask. The photomask can in turn be used for manufacturing semiconductor circuits. The method permits the decrease of the dimensional difference due to the coexistence of coarse and dense patterns in a plane and the production of a high precision pattern-etched product.

Abstract: The invention provides an electrolyte membrane that allows an operating temperature of a solid polymer membrane fuel cell to be raised and an operating temperature of a solid oxide fuel cell to be lowered. This electrolyte membrane can be used in a fuel cell that is operable in an intermediate temperature range. The invention also provides a fuel cell using such an electrolyte membrane. The electrolyte membrane has a hydrated electrolyte layer, and dense layers made of a hydrogen permeable material that are formed on both sides of this electrolyte layer. Both sides of the electrolyte membrane are coated with dense layers. Consequently, evaporation of moisture contained in the electrolyte layer is suppressed, and increase in the resistance of the membrane is inhibited. As a result, the range of the operating temperature of the fuel cell can be enlarged.