Abstract: A novel semiconductor device in which a metal film containing copper (Cu) is used for a wiring, a signal line, or the like in a transistor including an oxide semiconductor film is provided. The semiconductor device includes an oxide semiconductor film having conductivity on an insulating surface and a conductive film in contact with the oxide semiconductor film having conductivity. The conductive film includes a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti).

Abstract: Devices, methods, and programs for billing for electric power. A billing method may include generating billing information for an amount related to electric power transmitted by a power supply device, performing a billing process based on the billing information, and selectively transmitting electric power based on the result of the billing process. A power supply device may include a billing information generating unit, a billing processing unit, and a power control unit. Another billing method may include determining whether billing information has been received, performing a billing process after it is determined that the billing information has been received, transmitting a response signal to a power supply device, and providing notice regarding information related to the billing process. A power receiving device may include a billing processing unit, a power control unit, and a notice control unit.

Abstract: Devices and methods for supply or receiving electric power. A power supply method may include specifying a type of a power source, specifying a power receiving capability of a power receiving device, performing collation of the specified type of the power source with the specified power receiving capability, and controlling transmission of electric power from the power source of the specified type to the power receiving device based on the collation. A power receiving method may include specifying a type of a power source, specifying a power receiving capability of a power receiving device, performing collation of the specified type of the power source with the specified power receiving capability, and controlling, based on the collation, selective conversion of electric power transmitted from the power source of the specified type to the power receiving device.

Abstract: To provide a novel semiconductor device which includes a transistor and a metal film containing Cu for a wiring, a signal line, or the like. The semiconductor device includes a first wiring, a second wiring, a first transistor, and a second transistor. The first wiring is electrically connected to a source or a drain of the first transistor, and the second wiring is electrically connected to a gate of the second transistor. The first wiring and the second wiring each include a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti). The Cu—X alloy film in the first wiring is connected to the Cu—X alloy film in the second wiring.

Abstract: A novel semiconductor device in which a metal film containing copper (Cu) is used for a wiring, a signal line, or the like in a transistor including an oxide semiconductor film is provided. The semiconductor device includes an oxide semiconductor film having conductivity on an insulating surface and a conductive film in contact with the oxide semiconductor film having conductivity. The conductive film includes a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti).

Abstract: There is provided a power receiving device including a connecting unit that is connected to a power line through which power is transmitted, a determining unit that determines whether transmitted power is chargeable, based on power identification information indicating whether the transmitted power is chargeable power, and a notification control unit that performs notification based on a determination result.

Abstract: A source apparatus and a conditional access apparatus are disclosed. The source apparatus may transmit a command to the conditional access apparatus. The conditional access apparatus may transmit a response to the command to the source apparatus. When a time elapsed between transmission of the command by the source apparatus and reception of the response by the source apparatus does not exceed a predetermined round trip time (RTT), a first authorization signal to permit the conditional access apparatus to decrypt encrypted content may be generated. Additionally, whenever a non-RTT condition is met, a second authorization signal to permit the conditional access apparatus to decrypt the content may be generated.

Abstract: There is provided an appliance management apparatus including a connection state acquiring unit acquiring information generated due to an appliance terminal of an electronic appliance being positioned close to or connected to a power supplying terminal that supplies power, and a connection state management unit managing a connection state of the appliance terminal to the power supplying terminal using the information acquired by the connection state acquiring unit.

Abstract: A power control device 10 is a power control device that controls power supply from an outside to a plurality of power consuming devices 50, and includes a power supply control device 20 that obtains consumed power values of the plurality of power consuming devices 50 and predicts consumed power values, and controls power supply to the power consuming devices 50 when a prediction value of a total of the obtained consumed power values based on the prediction exceeds a predetermined power value.

Abstract: There is provided a power control apparatus including an input unit to which attribute information regarding a type of generation of power is input, a determination unit configured to determine the type of generation of the power corresponding to the attribute information according to the attribute information, and a power control unit configured to control use of the power according to a determination result by the determination unit.

Abstract: A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. In a semiconductor device including a bottom-gate transistor in which an insulating layer functioning as a channel protective film is provided over an oxide semiconductor film, elements contained in an etching gas can be prevented from remaining as impurities on a surface of the oxide semiconductor film by performing impurity-removing process after formation of an insulating layer provided over and in contact with the oxide semiconductor film and/or formation of source and drain electrode layers. The impurity concentration in the surface of the oxide semiconductor film is lower than or equal to 5×1018 atoms/cm3, preferably lower than or equal to 1×1018 atoms/cm3.

Abstract: There is provided a transmission apparatus including a terminal electrically connected to a terminal of another apparatus, a body information acquiring unit acquiring body information of a user holding the transmission apparatus, and a transmission unit operable, by carrying out load modulation in accordance with the terminal contacting or being positioned close to the terminal of the other apparatus, to transmit, via the terminal, information on which the body information acquired by the body information acquiring unit is superimposed.

Abstract: A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device is manufactured with a high yield to achieve high productivity. In the manufacture of a semiconductor device including a transistor in which a gate electrode layer, a gate insulating film, and an oxide semiconductor film are sequentially stacked and a source electrode layer and a drain electrode layer are provided in contact with the oxide semiconductor film, the source electrode layer and the drain electrode layer are formed through an etching step and then a step for removing impurities which are generated by the etching step and exist on a surface of the oxide semiconductor film and in the vicinity thereof is performed.

Abstract: A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. In a semiconductor device including a bottom-gate transistor in which an insulating layer functioning as a channel protective film is provided over an oxide semiconductor film, elements contained in an etching gas can be prevented from remaining as impurities on a surface of the oxide semiconductor film by performing impurity-removing process after formation of an insulating layer provided over and in contact with the oxide semiconductor film and/or formation of source and drain electrode layers. The impurity concentration in the surface of the oxide semiconductor film is lower than or equal to 5×1018 atoms/cm3, preferably lower than or equal to 1×1018 atoms/cm3.

Abstract: To provide a novel semiconductor device which includes a transistor and a metal film containing Cu for a wiring, a signal line, or the like. The semiconductor device includes a first wiring, a second wiring, a first transistor, and a second transistor. The first wiring is electrically connected to a source or a drain of the first transistor, and the second wiring is electrically connected to a gate of the second transistor. The first wiring and the second wiring each include a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti). The Cu—X alloy film in the first wiring is connected to the Cu—X alloy film in the second wiring.

Abstract: A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. In a semiconductor device including a bottom-gate transistor in which an insulating layer functioning as a channel protective film is provided over an oxide semiconductor film, elements contained in an etching gas can be prevented from remaining as impurities on a surface of the oxide semiconductor film by performing impurity-removing process after formation of an insulating layer provided over and in contact with the oxide semiconductor film and/or formation of source and drain electrode layers. The impurity concentration in the surface of the oxide semiconductor film is lower than or equal to 5×1018 atoms/cm3, preferably lower than or equal to 1×1018 atoms/cm3.

Abstract: A novel semiconductor device in which a metal film containing copper (Cu) is used for a wiring, a signal line, or the like in a transistor including an oxide semiconductor film is provided. The semiconductor device includes an oxide semiconductor film having conductivity on an insulating surface and a conductive film in contact with the oxide semiconductor film having conductivity. The conductive film includes a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti).

Abstract: A power control device 10 is a power control device that controls power supply from an outside to a plurality of power consuming devices 50, and includes a power supply control device 20 that obtains consumed power values of the plurality of power consuming devices 50 and predicts consumed power values, and controls power supply to the power consuming devices 50 when a prediction value of a total of the obtained consumed power values based on the prediction exceeds a predetermined power value.

Abstract: Devices and methods for supply or receiving electric power. A power supply method may include specifying a type of a power source, specifying a power receiving capability of a power receiving device, performing collation of the specified type of the power source with the specified power receiving capability, and controlling transmission of electric power from the power source of the specified type to the power receiving device based on the collation. A power receiving method may include specifying a type of a power source, specifying a power receiving capability of a power receiving device, performing collation of the specified type of the power source with the specified power receiving capability, and controlling, based on the collation, selective conversion of electric power transmitted from the power source of the specified type to the power receiving device.

Abstract: There is provided a power receiving device including a connecting unit that is connected to a power line through which power is transmitted, a determining unit that determines whether transmitted power is chargeable, based on power identification information indicating whether the transmitted power is chargeable power, and a notification control unit that performs notification based on a determination result.