Abstract: Devices, methods, and programs for billing for electric power. A billing method may include generating billing information for an amount related to electric power transmitted by a power supply device, performing a billing process based on the billing information, and selectively transmitting electric power based on the result of the billing process. A power supply device may include a billing information generating unit, a billing processing unit, and a power control unit. Another billing method may include determining whether billing information has been received, performing a billing process after it is determined that the billing information has been received, transmitting a response signal to a power supply device, and providing notice regarding information related to the billing process. A power receiving device may include a billing processing unit, a power control unit, and a notice control unit.

Abstract: Devices, methods, and programs for providing a notice indicating whether a device supports an authentication function. A method for providing notice may include performing communication with a device, making a determination whether the device is a power supply target, selectively transmitting power to the device based on a result of the determination, and providing a notice indicating whether the device supports an authentication function based on the result of the determination. A power supply device may include a communication unit, a determining unit, a power control unit, and a notice control unit. Another method for providing notice may include performing communication with a device, and providing a notice indicating whether the power supply device supports the authentication function based on a result of the communication. A power receiving device may include a communication unit and a notifying unit.

Abstract: A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. In a semiconductor device including a bottom-gate transistor in which an insulating layer functioning as a channel protective film is provided over an oxide semiconductor film, elements contained in an etching gas can be prevented from remaining as impurities on a surface of the oxide semiconductor film by performing impurity-removing process after formation of an insulating layer provided over and in contact with the oxide semiconductor film and/or formation of source and drain electrode layers. The impurity concentration in the surface of the oxide semiconductor film is lower than or equal to 5×1018 atoms/cm3, preferably lower than or equal to 1×1018 atoms/cm3.

Abstract: A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device is manufactured with a high yield to achieve high productivity. In the manufacture of a semiconductor device including a transistor in which a gate electrode layer, a gate insulating film, and an oxide semiconductor film are sequentially stacked and a source electrode layer and a drain electrode layer are provided in contact with the oxide semiconductor film, the source electrode layer and the drain electrode layer are formed through an etching step and then a step for removing impurities which are generated by the etching step and exist on a surface of the oxide semiconductor film and in the vicinity thereof is performed.

Abstract: A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device is manufactured with a high yield to achieve high productivity. In the manufacture of a semiconductor device including a transistor in which a gate electrode layer, a gate insulating film, and an oxide semiconductor film are sequentially stacked and a source electrode layer and a drain electrode layer are provided in contact with the oxide semiconductor film, the source electrode layer and the drain electrode layer are formed through an etching step and then a step for removing impurities which are generated by the etching step and exist on a surface of the oxide semiconductor film and in the vicinity thereof is performed.

Abstract: A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. In a semiconductor device including a bottom-gate transistor in which an insulating layer functioning as a channel protective film is provided over an oxide semiconductor film, elements contained in an etching gas can be prevented from remaining as impurities on a surface of the oxide semiconductor film by performing impurity-removing process after formation of an insulating layer provided over and in contact with the oxide semiconductor film and/or formation of source and drain electrode layers. The impurity concentration in the surface of the oxide semiconductor film is lower than or equal to 5×1018 atoms/cm3, preferably lower than or equal to 1×1018 atoms/cm3.

Abstract: There is provided a power control apparatus including an input unit to which attribute information regarding a type of generation of power is input, a determination unit configured to determine the type of generation of the power corresponding to the attribute information according to the attribute information, and a power control unit configured to control use of the power according to a determination result by the determination unit.