Abstract: A light-emitting device includes a light diffusing member that diffuses light emitted from a light source so that an object to be measured is irradiated with the light; and a holding unit that is provided on plural wires connected to the light source and holds the light diffusing member.

Abstract: A light-emitting device includes a light diffusing member that diffuses light emitted from a light source so that an object to be measured is irradiated with the light; and a holding unit that holds the light diffusing member and is provided on a wire connected to the light source so as to be located in an uncoated region of the wire.

Abstract: A light emitter includes: a substrate; a driving section provided on the substrate; a light source that is provided on the substrate and is driven by the driving section; a cover section through which light emitted from the light source is transmitted and that is disposed in an optical axial direction of the light source; and a support section that is provided on a part of the substrate excluding a part between the driving section and the light source and supports the cover section.

Abstract: A light emitter includes: a substrate; a capacitor provided on the substrate; a light source that is provided on the substrate and to which a driving current from electric charges accumulated in the capacitor is supplied; a cover section through which light emitted from the light source is transmitted and that is disposed in an optical axial direction of the light source; and a support section that is provided on a part of the substrate excluding a part between the capacitor and the light source and supports the cover section.

Abstract: Provided is a light emitting device including: a base material mounted on a wiring substrate; a light emitting element array provided on the base material; a first conductive pattern provided on the surface of the base material, the first conductive pattern including a first facing region connected to the light emitting element array, the first facing region being along a side surface of the light emitting element array and facing to the light emitting element array, and a first extending region extended beyond the first facing region; and penetrating members penetrating the base material from the first conductive pattern to a back surface side of the base material, each penetrating member being connected to the first facing region or the first extending region.

Abstract: A laser bonding apparatus, a method of bonding a plurality of semiconductor devices arranged on a main substrate of a workpiece, to the main substrate, and a method of manufacturing a semiconductor package, the laser bonding apparatus including a chamber having a transmissive window and in which a workpiece is accommodatable; a gas supply conduit connected to the chamber and configured to supply a gas at an elevated pressure relative to a pressure outside of the chamber; and a laser generator arranged outside the chamber and configured to irradiate the workpiece accommodated in the chamber, through the transmissive window.

Abstract: A method of processing a substrate includes attaching a first surface of a planarization film to a processing target substrate, disposing an electrostatic carrier onto a second surface opposite the first surface of the planarization film, fixing the processing target substrate to the electrostatic carrier by supplying power to the electrostatic carrier, and performing processing on the processing target substrate.

Abstract: A lateral electric field type liquid crystal display apparatus includes a first substrate on which pixels are disposed in a matrix shape, each of the pixels including a plurality of signal wirings and a plurality of scanning wirings which intersect each other, a switching element provided in a region adjacent to a portion in which the signal wiring and the scanning wiring intersect or on the scanning wiring, a pixel electrode connected to the switching element, and a counter electrode to which a common potential is supplied from a common potential wiring; a second substrate provided to face the first substrate; and a liquid crystal provided between the first and second substrates, wherein a first electric field shield electrode, which is set to the common potential, is provided between the signal wiring and the first substrate, and the first electric field shield electrode is electrically connected with a first wiring which supplies the common potential to the first electric field shield electrode, within a d

Abstract: Carry out a vapor etching step of cleaning an inside of a chamber of a vapor phase growth apparatus by vapor etching using HCl gas (S1). Carry out an annealing step of sequentially annealing a predetermined number of silicon wafers, one by one, in a non-oxidizing atmosphere (S2, S3). Repeat the vapor etching step and the annealing step a prescribed number of times. After having carried out the vapor etching step and the annealing step the prescribed number of times (S4: Yes), collect contaminants on the surface of each of the wafers, and measure the Mo concentration using ICP-MS (S5). Evaluate the cleanliness of the vapor phase growth apparatus on the basis of each Mo concentration value and the relationship between the Mo concentrations (S6). Thus, provided is a method with which it is possible to measure, with high sensitivity, the contamination amount of a vapor phase growth apparatus.

Abstract: A lateral electric field type liquid crystal display apparatus includes a first substrate on which pixels are disposed in a matrix shape, each of the pixels including a plurality of signal wirings and a plurality of scanning wirings which intersect each other, a switching element provided in a region adjacent to a portion in which the signal wiring and the scanning wiring intersect or on the scanning wiring, a pixel electrode connected to the switching element, and a counter electrode to which a common potential is supplied from a common potential wiring; a second substrate provided to face the first substrate; and a liquid crystal provided between the first and second substrates, wherein a first electric field shield electrode, which is set to the common potential, is provided between the signal wiring and the first substrate, and the first electric field shield electrode is electrically connected with a first wiring which supplies the common potential to the first electric field shield electrode, within a d

Abstract: Carry out a vapor etching step of cleaning an inside of a chamber of a vapor phase growth apparatus by vapor etching using HCl gas (S1). Carry out an annealing step of sequentially annealing a predetermined number of silicon wafers, one by one, in a non-oxidizing atmosphere (S2, S3). Repeat the vapor etching step and the annealing step a prescribed number of times. After having carried out the vapor etching step and the annealing step the prescribed number of times (S4: Yes), collect contaminants on the surface of each of the wafers, and measure the Mo concentration using ICP-MS (S5). Evaluate the cleanliness of the vapor phase growth apparatus on the basis of each Mo concentration value and the relationship between the Mo concentrations (S6). Thus, provided is a method with which it is possible to measure, with high sensitivity, the contamination amount of a vapor phase growth apparatus.

Abstract: A semiconductor device according to an embodiment includes: first and second semiconductor regions each having a protruded shape provided on a substrate, the first semiconductor region including a first source, a first drain, and a first channel provided between the first source and the first drain and extending in a first direction from the first source to the first drain, the first channel having a first width in a second direction perpendicular to the first direction, and the second semiconductor region including a second source, a second drain, and a second channel provided between the second source and the second drain and extending in a third direction from the second source to the second drain, the second channel having a second width in a fourth direction perpendicular to the third direction that is wider than the first width of the first channel.

Abstract: According to one embodiment, a method of manufacturing a magnetoresistive element, the method includes forming a non-magnetic layer on a first magnetic layer, forming a second magnetic layer on the non-magnetic layer, and patterning the second magnetic layer by a RIE using an etching gas including a noble gas and a hydrocarbon gas.

Abstract: According to one embodiment, a method of manufacturing a magnetoresistive element, the method includes forming a first non-magnetic layer on a first magnetic layer, forming a second magnetic layer on the first non-magnetic layer, forming a second non-magnetic layer on the second magnetic layer, forming a third magnetic layer on the second non-magnetic layer, patterning the third magnetic layer by a RIE using an etching gas including a noble gas and a nitrogen gas until a surface of the second non-magnetic layer is exposed, and patterning the second non-magnetic layer and the second magnetic layer after patterning of the third magnetic layer.

Abstract: According to one embodiment, a method of manufacturing a magnetoresistive element, the method includes forming a first non-magnetic layer on a first magnetic layer, forming a second magnetic layer on the first non-magnetic layer, forming a second non-magnetic layer on the second magnetic layer, forming a third magnetic layer on the second non-magnetic layer, patterning the third magnetic layer by a RIE using an etching gas including a noble gas and a nitrogen gas until a surface of the second non-magnetic layer is exposed, and patterning the second non-magnetic layer and the second magnetic layer after patterning of the third magnetic layer.

Abstract: A semiconductor manufacturing equipment is provided herein. The semiconductor manufacturing equipment includes a heater element configured to heat a wafer, a first connection part and a second connection part integrated with the heater element, a first electrode electrically contacted with and fixed to the first connection part on a first surface of the first electrode, and a second electrode electrically contacted with and fixed to the second connection part on a second surface of the second electrode. The second surface is perpendicular to the direction of the first surface, and the heater element produces heat by applying a voltage between the first electrode and the second electrode.

Abstract: A semiconductor device according to an embodiment includes: first and second semiconductor regions each having a protruded shape provided on a substrate, the first semiconductor region including a first source, a first drain, and a first channel provided between the first source and the first drain and extending in a first direction from the first source to the first drain, the first channel having a first width in a second direction perpendicular to the first direction, and the second semiconductor region including a second source, a second drain, and a second channel provided between the second source and the second drain and extending in a third direction from the second source to the second drain, the second channel having a second width in a fourth direction perpendicular to the third direction that is wider than the first width of the first channel.

Abstract: An aspect of the present embodiment, there is provided a method of fabricating a semiconductor device including providing a film to be processed above a semiconductor substrate, providing a negative-type resist and a photo-curable resist in order, pressing a main surface of a template onto the photo-curable resist, the main surface of the template having a concavo-convex pattern with a light shield portion provided on at least a part of a convex portion, irradiating the template with light from a back surface of the template, developing the negative-type resist and the photo-curable resist so as to print the concavo-convex pattern of the template on the negative-type resist and the photo-curable resist, and etching the film to be processed by using the concavo-convex pattern printed on the negative-type resist and the photo-curable resist as a mask.

Abstract: An aspect of the present embodiment, there is provided a method of fabricating a semiconductor device including providing a film to be processed above a semiconductor substrate, providing a negative-type resist and a photo-curable resist in order, pressing a main surface of a template onto the photo-curable resist, the main surface of the template having a concavo-convex pattern with a light shield portion provided on at least a part of a convex portion, irradiating the template with light from a back surface of the template, developing the negative-type resist and the photo-curable resist so as to print the concavo-convex pattern of the template on the negative-type resist and the photo-curable resist, and etching the film to be processed by using the concavo-convex pattern printed on the negative-type resist and the photo-curable resist as a mask.

Abstract: Disclosed is a liquid crystal display device that includes a TFT substrate. A plurality of gate lines and a plurality of common lines extend in a first direction on the TFT substrate. Drain lines extend in a second direction substantially perpendicularly to these lines. Bus lines are located outside a display area and are extending parallel to the drain lines. Common line terminals are provided on either side of each block that is constituted by a predetermined number of gate terminals. The common line terminals and the lead lines therefore are formed on the same layer as the drain lines and are connected to the bus lines on the same layer without any contacts being used. Resistance along the routes taken by common lines can be reduced.