Patents by Inventor Satoshi Inada

Satoshi Inada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070218664
    Abstract: A vapor phase epitaxial growth method using a vapor phase epitaxy apparatus having a chamber, a support structure holding thereon a substrate in the chamber, a first flow path supplying a reactant gas for film formation on the substrate and a second flow path for exhaust of the gas, said method includes rotating the substrate, supplying the reactant gas and a carrier gas to thereby perform vapor-phase epitaxial growth of a semiconductor film on the substrate, and during the vapor-phase epitaxial growth of the semiconductor film on the substrate, controlling process parameters to make said semiconductor film uniform in thickness, said process parameters including flow rates and concentrations of the reactant gas and the carrier gas, a degree of vacuum within said chamber, a temperature of the substrate, and a rotation speed of said substrate.
    Type: Application
    Filed: March 20, 2007
    Publication date: September 20, 2007
    Inventors: Hideki Ito, Satoshi Inada, Yoshikazu Moriyama
  • Publication number: 20070023869
    Abstract: A vapor phase deposition apparatus includes a chamber, a support table disposed in the chamber and adapted to support a substrate in the chamber, a first passage connected to the chamber and adapted to supply gas to the chamber to form a film on the substrate, and a second passage connected to the chamber and adapted to discharge the gas from the chamber. The support table includes a first depressed portion and a second depressed portion formed in a bottom part of the first depressed portion, a bottom face of the second depressed portion for supporting the substrate.
    Type: Application
    Filed: July 28, 2006
    Publication date: February 1, 2007
    Inventors: Hiroshi Furutani, Yoshikazu Moriyama, Seiichi Nakazawa, Kunihiko Suzuki, Hideki Arai, Satoshi Inada
  • Publication number: 20050237469
    Abstract: A liquid crystal display device includes an active matrix substrate and a counter substrate opposing each other with a gap therebetween defined by a plurality of columnar spacers. The active matrix substrate has a plurality of spacer holes each receiving therein a corresponding one of the columnar spacers, and a plurality of dummy spacer holes aligned with the spacer holes and each receiving therein no columnar spacer.
    Type: Application
    Filed: April 20, 2005
    Publication date: October 27, 2005
    Inventors: Tsutomu Kadotani, Satoshi Inada, Takashi Kamino, Yusuke Nogami
  • Publication number: 20050211986
    Abstract: Disclosed is a liquid crystal display device that includes a TFT substrate. A plurality of gate lines and a plurality of common lines extend in a first direction on the TFT substrate. Drain lines extend in a second direction substantially perpendicularly to these lines. Bus lines are located outside a display area and are extending parallel to the drain lines. Common line terminals are provided on either side of each block that is constituted by a predetermined number of gate terminals. The common line terminals and the lead lines therefor are formed on the same layer as the drain lines and are connected to the bus lines on the same layer without any contacts being used. Resistance along the routes taken by common lines can be reduced.
    Type: Application
    Filed: March 28, 2005
    Publication date: September 29, 2005
    Inventors: Takayuki Konno, Satoshi Inada, Yoshiro Kitagawa, Shinichi Nishida
  • Patent number: 4159244
    Abstract: There is provided a waste water-treating method which comprises passing an aqueous liquid, in an upward direction and at a suitable flow velocity, through a bed consisting of activated carbon whose particle diameter ranges between 0.20 and 1.5 mm and whose width of particle size range (or substantial difference between the largest ones and the smallest ones) is chosen to be 0.30 mm or more, controlling the fluidized bed of the carbon to be expanded 1.2 to 3.0 times to form a particle size gradient of the activated carbon along the resultant fluidized bed.
    Type: Grant
    Filed: September 8, 1977
    Date of Patent: June 26, 1979
    Assignees: Kureha Kagaku Kogyo Kabushiki Kaisha, Toyo Boseki Kabushiki Kaisha
    Inventors: Yasuo Amagi, Satoshi Inada
  • Patent number: 4039290
    Abstract: A fluidized bed type spent activated carbon regenerator with an upper drying chamber and a lower reactivating chamber within a column through which spent activated carbon particles are treated in a fluidized state. The regenerator has a distributor at the lower end of a spent carbon feed pipe which opens into the upper chamber to distribute the feed of spent activated carbon uniformly on all sides of the feed pipe and over a larger area in the upper chamber. A hood is mounted around an upper end of a first overflow pipe which provides a passage to the lower chamber for carbon particles devolatilized in the upper chamber to block shortpasses of incompletely devolatilized carbon particles to the lower chamber. The regenerator is further provided with a louver strainer at the ceiling of the upper chamber to block fine carbon powder which tends to leave the regenerator entrained in upward streams of a regeneration gas flowing through the upper chamber toward a gas outlet at the top of the regenerator.
    Type: Grant
    Filed: June 14, 1976
    Date of Patent: August 2, 1977
    Assignee: Kureha Kagaku Kogyo Kabushiki Kaisha
    Inventors: Satoshi Inada, Mituo Amano, Tadashi Onuma