Patents by Inventor Satoshi Kobayashi

Satoshi Kobayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170044063
    Abstract: To provide a chemical agent whereby adjustment of air volume is easier, particularly in a hydraulic composition having fly ash blended therein. An admixture for a hydraulic composition, having a structure indicated by general formula (1) and including a carbon blocker including either one type of compound selected from a group comprising phosphate esters or at least two mixtures; and a water-reducing agent. (In the formula, R1 indicates a hydrogen atom, an alkyl group, an alkenyl group, or a (meth)acryloyl group, A1O indicates a C2-3 oxyalkylene group, n indicates an average added molar number for the oxyalkylene group A1O of 2-150, m indicates an integer between 1 and 3, M indicates a hydrogen atom, an alkali metal atom, a group II metal atom, an ammonium group, or an organic ammonium group.
    Type: Application
    Filed: April 24, 2015
    Publication date: February 16, 2017
    Applicant: SIKA TECHNOLOGY AG
    Inventors: Akira IKEDA, Susumu HASHIZUME, Akira SUGA, Satoshi KOBAYASHI, Michael Wernher DANZINGER, Kaname SAITOH, Ikuhide TOKAMI
  • Publication number: 20170040235
    Abstract: Disclosed herein is a using method for a test wafer including a test substrate and a metal foil formed on the front side of the test substrate. The using method includes a modified layer forming step of applying a laser beam having a transmission wavelength to the test substrate from the back side of the test wafer in the condition where the focal point of the laser beam is set inside the test substrate, thereby forming a modified layer inside the test substrate, and a damage detecting step of observing the front side of the test wafer after performing the modified layer forming step, thereby detecting damage to the metal foil.
    Type: Application
    Filed: July 27, 2016
    Publication date: February 9, 2017
    Inventors: Satoshi Kobayashi, Shunsuke Teranishi, Nobumori Ogoshi, Atsushi Ueki, Yuriko Sato
  • Publication number: 20170038587
    Abstract: A display device includes: a stepping motor; a concave mirror that moves in accordance with the operation of the stepping motor, the concave mirror reflecting display light emitted from a display unit toward the windshield; a lever part that moves together with the concave mirror; a drive unit for driving the stepping motor by a microstep drive system; a control unit for controlling the movement of the concave mirror by controlling the drive unit; and a stopper unit provided within the range of movement of the lever part. The drive unit is configured to detect the counter-electromotive force generated by the stepping motor when the lever part comes into contact with the stopper unit. The control unit determines the reference position when the movement of the concave mirror is controlled in accordance with the counter-electromotive force detected by the drive unit.
    Type: Application
    Filed: April 15, 2015
    Publication date: February 9, 2017
    Applicant: NIPPON SEIKI CO., LTD.
    Inventors: Ryoichi ISHIBASHI, Satoshi KOBAYASHI, Norihiko USHIDA, Yoshiko ADACHI
  • Patent number: 9543189
    Abstract: A method of processing a laminated wafer in which a first wafer is laminated on a second wafer, the method including: a laminated wafer forming step of forming the laminated wafer by laminating the first wafer on the second wafer; a modified layer forming step of forming a modified layer within the first wafer by positioning a focusing point of a laser beam within the first wafer and moving the first wafer in a horizontal direction relative to the focusing point while applying the laser beam, the modified layer forming step being performed before or after the laminated wafer forming step is performed; and a separating step of separating part of the first wafer from the laminated wafer with the modified layer as a boundary, the separating step being performed after the laminated wafer forming step and the modified layer forming step are performed.
    Type: Grant
    Filed: July 29, 2014
    Date of Patent: January 10, 2017
    Assignee: Disco Corporation
    Inventors: Seiji Harada, Satoshi Kobayashi, Yasuyoshi Yubira
  • Patent number: 9469001
    Abstract: A machine tool includes: a bed, the upper surface of which has the table provided thereon; a cut debris duct which is provided so as to extend rearward from a cut debris discharge opening open at the center, in the left-right direction, of the rear face of the bed, and which discharges cut debris from within the bed to outside of the machine tool; a bifurcated vertically movable body which vertically moves along a pair of vertical guides, and which straddles the cut debris duct, the pair of vertical guides vertically extending on the rear face of the bed at positions on both the left and right sides of the cut debris duct; and a pair of left and right feed screws which extend parallel to the vertical guides, and which move the vertically movable body along the vertical guides.
    Type: Grant
    Filed: June 25, 2012
    Date of Patent: October 18, 2016
    Assignee: Makino Milling Machine Co., Ltd.
    Inventors: Shinji Koike, Kazuya Mayumi, Satoshi Kobayashi
  • Publication number: 20160233341
    Abstract: An object is to provide a semiconductor device having electrical characteristics such as high withstand voltage, low reverse saturation current, and high on-state current. In particular, an object is to provide a power diode and a rectifier which include non-linear elements. An embodiment of the present invention is a semiconductor device including a first electrode, a gate insulating layer covering the first electrode, an oxide semiconductor layer in contact with the gate insulating layer and overlapping with the first electrode, a pair of second electrodes covering end portions of the oxide semiconductor layer, an insulating layer covering the pair of second electrodes and the oxide semiconductor layer, and a third electrode in contact with the insulating layer and between the pair of second electrodes. The pair of second electrodes are in contact with end surfaces of the oxide semiconductor layer.
    Type: Application
    Filed: April 19, 2016
    Publication date: August 11, 2016
    Inventors: Shunpei YAMAZAKI, Hiromichi GODO, Satoshi KOBAYASHI
  • Publication number: 20160172109
    Abstract: In an embodiment, a capacitor body 11 of the multilayer ceramic capacitor 10 has protective parts 11a made of ceramics, capacitance-forming parts 11b comprising multiple internal electrode layers 11b1 stacked together with ceramic layers 11b2 placed in between, and a non-capacitance-forming part 11c made of ceramics, in the order of “protective part 11a—capacitance-forming part 11b—non-capacitance-forming part 11c—capacitance-forming part 11b—protective part 11a” from one side to the other side along the laminating direction, and T2 representing the thickness of each protective part 11a in the laminating direction, T3 representing the thickness of each capacitance-forming part 11b in the laminating direction, and T4 representing the thickness of the non-capacitance-forming part 11c in the laminating direction, satisfy the relationship of “T2<T3?T4.
    Type: Application
    Filed: July 8, 2014
    Publication date: June 16, 2016
    Inventors: Satoshi KOBAYASHI, Takahisa FUKUDA, Tomoaki NAKAMURA
  • Patent number: 9349539
    Abstract: A ceramic electronic component includes external electrodes having a multi-layer structure including an intermediate conductive resin layer, wherein the intermediate conductive resin layer in the external electrode is made of epoxy resin containing conductive filler, and the intermediate conductive resin layer meets both the condition B/A?0.47 and condition C/A?0.39 (A, B and C represent the maximum spectral intensities obtained based on the relationship line of the wave number and spectral intensity of the intermediate conductive resin layer as obtained by the ATR method). The ceramic electronic component minimizes separation that could occur at the interface between such intermediate conductive resin layer and a metal layer.
    Type: Grant
    Filed: July 23, 2013
    Date of Patent: May 24, 2016
    Assignee: TAIYO YUDEN CO., LTD.
    Inventors: Satoshi Kobayashi, Tomoaki Nakamura, Takahisa Fukuda
  • Patent number: 9324877
    Abstract: An object is to provide a semiconductor device having electrical characteristics such as high withstand voltage, low reverse saturation current, and high on-state current. In particular, an object is to provide a power diode and a rectifier which include non-linear elements. An embodiment of the present invention is a semiconductor device including a first electrode, a gate insulating layer covering the first electrode, an oxide semiconductor layer in contact with the gate insulating layer and overlapping with the first electrode, a pair of second electrodes covering end portions of the oxide semiconductor layer, an insulating layer covering the pair of second electrodes and the oxide semiconductor layer, and a third electrode in contact with the insulating layer and between the pair of second electrodes. The pair of second electrodes are in contact with end surfaces of the oxide semiconductor layer.
    Type: Grant
    Filed: September 11, 2014
    Date of Patent: April 26, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hiromichi Godo, Satoshi Kobayashi
  • Publication number: 20150336230
    Abstract: A machine tool includes: a bed, the upper surface of which has the table provided thereon; a cut debris duct which is provided so as to extend rearward from a cut debris discharge opening open at the center, in the left-right direction, of the rear face of the bed, and which discharges cut debris from within the bed to outside of the machine tool; a bifurcated vertically movable body which vertically moves along a pair of vertical guides, and which straddles the cut debris duct, the pair of vertical guides vertically extending on the rear face of the bed at positions on both the left and right sides of the cut debris duct; and a pair of left and right feed screws which extend parallel to the vertical guides, and which move the vertically movable body along the vertical guides.
    Type: Application
    Filed: June 25, 2012
    Publication date: November 26, 2015
    Inventors: Shinji Koike, Kazuya Mayumi, Satoshi Kobayashi
  • Publication number: 20150336228
    Abstract: A work machine includes: a bed having a table positioned on the upper surface thereof; sidewalls positioned to the left and right of the bed and projecting to the rear of the rear surface of the bed; support members for each supporting the bed in relation to a floor surface by using two points on the sidewalls to the left and right of the bed, and using at least one other point; a vertically moving body for moving along a pair of left and right vertical guides positioned in the vertical direction down to the vicinity of the floor surface on the rear surface of the bed; and a vertical drive means for moving the vertically moving body as one of the abovementioned relative movements, and having a pair of left and right feed screws positioned in parallel with the vertical guides.
    Type: Application
    Filed: June 25, 2012
    Publication date: November 26, 2015
    Inventors: Toshihiro Suzuki, Kazuya Mayumi, Satoshi Kobayashi
  • Patent number: 9176353
    Abstract: An object is to propose a method of manufacturing, with high mass productivity, liquid crystal display devices having thin film transistors with highly reliable electric characteristics. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.
    Type: Grant
    Filed: June 24, 2008
    Date of Patent: November 3, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yukie Suzuki, Hideaki Kuwabara, Hajime Kimura, Hidekazu Miyairi, Yoshiyuki Kurokawa, Satoshi Kobayashi
  • Publication number: 20150231718
    Abstract: To provide a high-frequency-vibration-assisted electrolytic grinding method and a device therefor in which micro abrasive grains can be used so as to improve the grinding accuracy and efficiency. A high-frequency-vibration-assisted electrolytic grinding method in which a work is grinded by a grinding stone while electrolytic reaction is performed by applying a voltage between the grinding stone and the work through an electrolytic solution and high-frequency vibration is transmitted to the grinding stone or the work wherein; the grinding stone has non-conductive micro abrasive grains with grain sizes of less than #400 in accordance with the JIS R6001 standard of grinding stones for precision polishing projecting from its surface formed of conductive binding material, and the distance between the grinding stone and the work, which is regulated by the projecting lengths of the micro abrasive grains from the base of the grinding stone, is set to less than 0.02 mm.
    Type: Application
    Filed: April 12, 2013
    Publication date: August 20, 2015
    Applicant: Micron Machinery Co., LTD
    Inventors: Toru Tachibana, Satoshi Kobayashi, Masayuki Takahashi, Chikashi Murakoshi, Kazunori Koike
  • Patent number: 9057924
    Abstract: An object is to propose a method of manufacturing, with high mass productivity, liquid crystal display devices having thin film transistors with highly reliable electric characteristics. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.
    Type: Grant
    Filed: June 24, 2008
    Date of Patent: June 16, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yukie Suzuki, Hideaki Kuwabara, Hajime Kimura, Hidekazu Miyairi, Yoshiyuki Kurokawa, Satoshi Kobayashi
  • Publication number: 20150118947
    Abstract: A vehicular cold-air shielding structure that is provided on a floor of a vehicle includes a front seat that is slidable in the front-rear direction of the vehicle and a shielding member that is disposed under the front seat and that is provided so as to extend in the width direction of the vehicle. The shielding member has a flexibility that allows the shielding member to follow the sliding movement of the front seat.
    Type: Application
    Filed: October 23, 2014
    Publication date: April 30, 2015
    Applicant: HONDA MOTOR CO., LTD.
    Inventors: Choji Sakuma, Yoshiyuki Takeuchi, Satoshi Kobayashi, Yoshinori Ishimoto, Ryosuke Nakashima
  • Publication number: 20150037962
    Abstract: A method of processing a laminated wafer in which a first wafer is laminated on a second wafer, the method including: a laminated wafer forming step of forming the laminated wafer by laminating the first wafer on the second wafer; a modified layer forming step of forming a modified layer within the first wafer by positioning a focusing point of a laser beam within the first wafer and moving the first wafer in a horizontal direction relative to the focusing point while applying the laser beam, the modified layer forming step being performed before or after the laminated wafer forming step is performed; and a separating step of separating part of the first wafer from the laminated wafer with the modified layer as a boundary, the separating step being performed after the laminated wafer forming step and the modified layer forming step are performed.
    Type: Application
    Filed: July 29, 2014
    Publication date: February 5, 2015
    Inventors: Seiji Harada, Satoshi Kobayashi, Yasuyoshi Yubira
  • Publication number: 20150038062
    Abstract: A processing apparatus including a chuck table having a holding surface for rotatably holding a workpiece, a laser beam applying mechanism having a laser beam generating unit for generating a laser beam and focusing the laser beam to the inside of the workpiece held on the chuck table, a relatively moving unit for relatively moving the chuck table and the laser beam applying mechanism in a direction parallel to the holding surface of the chuck table while applying the laser beam to the workpiece to thereby form a modified layer inside of the workpiece, a separating unit for separating a part of the workpiece along the modified layer as a boundary formed inside the workpiece, and a grinding/polishing unit having a grinding/polishing wheel for grinding or polishing the modified layer left on the workpiece after separating the part and a spindle for rotatably mounting the grinding/polishing wheel.
    Type: Application
    Filed: July 28, 2014
    Publication date: February 5, 2015
    Inventors: Yoshio Umeda, Satoshi Kobayashi, Yasuyoshi Yubira
  • Patent number: 8945962
    Abstract: In a method for manufacturing a semiconductor device including a transistor and a conductive film over a substrate, a first insulating film and a second insulating film are formed over the transistor and the conductive film sequentially. Then, an opening and a recessed portion are formed in the second insulating film using one multi-tone photomask, wherein the opening is deeper than the recessed portion in the second insulating film. By using the opening, a first contact hole exposing one of the electrodes of the transistor is formed through the first and second insulating films and, by using the recessed portion, a second contact hole exposing the first insulating film is formed through the second insulating film. Moreover, an electrode is formed on and in contact with the one of the electrodes in the first contact hole and the first insulating film in the second contact hole.
    Type: Grant
    Filed: March 18, 2013
    Date of Patent: February 3, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yoshiyuki Kurokawa, Yasuhiro Jinbo, Satoshi Kobayashi, Daisuke Kawae
  • Publication number: 20140374756
    Abstract: An object is to provide a semiconductor device having electrical characteristics such as high withstand voltage, low reverse saturation current, and high on-state current. In particular, an object is to provide a power diode and a rectifier which include non-linear elements. An embodiment of the present invention is a semiconductor device including a first electrode, a gate insulating layer covering the first electrode, an oxide semiconductor layer in contact with the gate insulating layer and overlapping with the first electrode, a pair of second electrodes covering end portions of the oxide semiconductor layer, an insulating layer covering the pair of second electrodes and the oxide semiconductor layer, and a third electrode in contact with the insulating layer and between the pair of second electrodes. The pair of second electrodes are in contact with end surfaces of the oxide semiconductor layer.
    Type: Application
    Filed: September 11, 2014
    Publication date: December 25, 2014
    Inventors: Shunpei YAMAZAKI, Hiromichi GODO, Satoshi KOBAYASHI
  • Patent number: 8916866
    Abstract: A semiconductor device includes a first gate electrode; a gate insulating layer covering the first gate electrode; an oxide semiconductor layer that overlaps with the first gate electrode; oxide semiconductor layers having high carrier density covering end portions of the oxide semiconductor layer; a source electrode and a drain electrode in contact with the oxide semiconductor layers having high carrier density; an insulating layer covering the source electrode, the drain electrode, and the oxide semiconductor layer; and a second gate electrode that is in contact with the insulating layer. Each of the oxide semiconductor layers is in contact with part of each of an upper surface, a lower surface, and a side surface of one of the end portions of the oxide semiconductor layer and part of an upper surface of the gate insulating layer.
    Type: Grant
    Filed: October 24, 2011
    Date of Patent: December 23, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hiromichi Godo, Satoshi Kobayashi