Abstract: A machine tool includes: a bed, the upper surface of which has the table provided thereon; a cut debris duct which is provided so as to extend rearward from a cut debris discharge opening open at the center, in the left-right direction, of the rear face of the bed, and which discharges cut debris from within the bed to outside of the machine tool; a bifurcated vertically movable body which vertically moves along a pair of vertical guides, and which straddles the cut debris duct, the pair of vertical guides vertically extending on the rear face of the bed at positions on both the left and right sides of the cut debris duct; and a pair of left and right feed screws which extend parallel to the vertical guides, and which move the vertically movable body along the vertical guides.

Abstract: An object is to provide a semiconductor device having electrical characteristics such as high withstand voltage, low reverse saturation current, and high on-state current. In particular, an object is to provide a power diode and a rectifier which include non-linear elements. An embodiment of the present invention is a semiconductor device including a first electrode, a gate insulating layer covering the first electrode, an oxide semiconductor layer in contact with the gate insulating layer and overlapping with the first electrode, a pair of second electrodes covering end portions of the oxide semiconductor layer, an insulating layer covering the pair of second electrodes and the oxide semiconductor layer, and a third electrode in contact with the insulating layer and between the pair of second electrodes. The pair of second electrodes are in contact with end surfaces of the oxide semiconductor layer.

Abstract: In an embodiment, a capacitor body 11 of the multilayer ceramic capacitor 10 has protective parts 11a made of ceramics, capacitance-forming parts 11b comprising multiple internal electrode layers 11b1 stacked together with ceramic layers 11b2 placed in between, and a non-capacitance-forming part 11c made of ceramics, in the order of “protective part 11a—capacitance-forming part 11b—non-capacitance-forming part 11c—capacitance-forming part 11b—protective part 11a” from one side to the other side along the laminating direction, and T2 representing the thickness of each protective part 11a in the laminating direction, T3 representing the thickness of each capacitance-forming part 11b in the laminating direction, and T4 representing the thickness of the non-capacitance-forming part 11c in the laminating direction, satisfy the relationship of “T2<T3?T4.

Abstract: A ceramic electronic component includes external electrodes having a multi-layer structure including an intermediate conductive resin layer, wherein the intermediate conductive resin layer in the external electrode is made of epoxy resin containing conductive filler, and the intermediate conductive resin layer meets both the condition B/A?0.47 and condition C/A?0.39 (A, B and C represent the maximum spectral intensities obtained based on the relationship line of the wave number and spectral intensity of the intermediate conductive resin layer as obtained by the ATR method). The ceramic electronic component minimizes separation that could occur at the interface between such intermediate conductive resin layer and a metal layer.

Abstract: An object is to provide a semiconductor device having electrical characteristics such as high withstand voltage, low reverse saturation current, and high on-state current. In particular, an object is to provide a power diode and a rectifier which include non-linear elements. An embodiment of the present invention is a semiconductor device including a first electrode, a gate insulating layer covering the first electrode, an oxide semiconductor layer in contact with the gate insulating layer and overlapping with the first electrode, a pair of second electrodes covering end portions of the oxide semiconductor layer, an insulating layer covering the pair of second electrodes and the oxide semiconductor layer, and a third electrode in contact with the insulating layer and between the pair of second electrodes. The pair of second electrodes are in contact with end surfaces of the oxide semiconductor layer.

Abstract: A machine tool includes: a bed, the upper surface of which has the table provided thereon; a cut debris duct which is provided so as to extend rearward from a cut debris discharge opening open at the center, in the left-right direction, of the rear face of the bed, and which discharges cut debris from within the bed to outside of the machine tool; a bifurcated vertically movable body which vertically moves along a pair of vertical guides, and which straddles the cut debris duct, the pair of vertical guides vertically extending on the rear face of the bed at positions on both the left and right sides of the cut debris duct; and a pair of left and right feed screws which extend parallel to the vertical guides, and which move the vertically movable body along the vertical guides.

Abstract: A work machine includes: a bed having a table positioned on the upper surface thereof; sidewalls positioned to the left and right of the bed and projecting to the rear of the rear surface of the bed; support members for each supporting the bed in relation to a floor surface by using two points on the sidewalls to the left and right of the bed, and using at least one other point; a vertically moving body for moving along a pair of left and right vertical guides positioned in the vertical direction down to the vicinity of the floor surface on the rear surface of the bed; and a vertical drive means for moving the vertically moving body as one of the abovementioned relative movements, and having a pair of left and right feed screws positioned in parallel with the vertical guides.

Abstract: An object is to propose a method of manufacturing, with high mass productivity, liquid crystal display devices having thin film transistors with highly reliable electric characteristics. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.

Abstract: To provide a high-frequency-vibration-assisted electrolytic grinding method and a device therefor in which micro abrasive grains can be used so as to improve the grinding accuracy and efficiency. A high-frequency-vibration-assisted electrolytic grinding method in which a work is grinded by a grinding stone while electrolytic reaction is performed by applying a voltage between the grinding stone and the work through an electrolytic solution and high-frequency vibration is transmitted to the grinding stone or the work wherein; the grinding stone has non-conductive micro abrasive grains with grain sizes of less than #400 in accordance with the JIS R6001 standard of grinding stones for precision polishing projecting from its surface formed of conductive binding material, and the distance between the grinding stone and the work, which is regulated by the projecting lengths of the micro abrasive grains from the base of the grinding stone, is set to less than 0.02 mm.

Abstract: An object is to propose a method of manufacturing, with high mass productivity, liquid crystal display devices having thin film transistors with highly reliable electric characteristics. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.

Abstract: A vehicular cold-air shielding structure that is provided on a floor of a vehicle includes a front seat that is slidable in the front-rear direction of the vehicle and a shielding member that is disposed under the front seat and that is provided so as to extend in the width direction of the vehicle. The shielding member has a flexibility that allows the shielding member to follow the sliding movement of the front seat.

Abstract: A method of processing a laminated wafer in which a first wafer is laminated on a second wafer, the method including: a laminated wafer forming step of forming the laminated wafer by laminating the first wafer on the second wafer; a modified layer forming step of forming a modified layer within the first wafer by positioning a focusing point of a laser beam within the first wafer and moving the first wafer in a horizontal direction relative to the focusing point while applying the laser beam, the modified layer forming step being performed before or after the laminated wafer forming step is performed; and a separating step of separating part of the first wafer from the laminated wafer with the modified layer as a boundary, the separating step being performed after the laminated wafer forming step and the modified layer forming step are performed.

Abstract: A processing apparatus including a chuck table having a holding surface for rotatably holding a workpiece, a laser beam applying mechanism having a laser beam generating unit for generating a laser beam and focusing the laser beam to the inside of the workpiece held on the chuck table, a relatively moving unit for relatively moving the chuck table and the laser beam applying mechanism in a direction parallel to the holding surface of the chuck table while applying the laser beam to the workpiece to thereby form a modified layer inside of the workpiece, a separating unit for separating a part of the workpiece along the modified layer as a boundary formed inside the workpiece, and a grinding/polishing unit having a grinding/polishing wheel for grinding or polishing the modified layer left on the workpiece after separating the part and a spindle for rotatably mounting the grinding/polishing wheel.

Abstract: In a method for manufacturing a semiconductor device including a transistor and a conductive film over a substrate, a first insulating film and a second insulating film are formed over the transistor and the conductive film sequentially. Then, an opening and a recessed portion are formed in the second insulating film using one multi-tone photomask, wherein the opening is deeper than the recessed portion in the second insulating film. By using the opening, a first contact hole exposing one of the electrodes of the transistor is formed through the first and second insulating films and, by using the recessed portion, a second contact hole exposing the first insulating film is formed through the second insulating film. Moreover, an electrode is formed on and in contact with the one of the electrodes in the first contact hole and the first insulating film in the second contact hole.

Abstract: An object is to provide a semiconductor device having electrical characteristics such as high withstand voltage, low reverse saturation current, and high on-state current. In particular, an object is to provide a power diode and a rectifier which include non-linear elements. An embodiment of the present invention is a semiconductor device including a first electrode, a gate insulating layer covering the first electrode, an oxide semiconductor layer in contact with the gate insulating layer and overlapping with the first electrode, a pair of second electrodes covering end portions of the oxide semiconductor layer, an insulating layer covering the pair of second electrodes and the oxide semiconductor layer, and a third electrode in contact with the insulating layer and between the pair of second electrodes. The pair of second electrodes are in contact with end surfaces of the oxide semiconductor layer.

Abstract: A semiconductor device includes a first gate electrode; a gate insulating layer covering the first gate electrode; an oxide semiconductor layer that overlaps with the first gate electrode; oxide semiconductor layers having high carrier density covering end portions of the oxide semiconductor layer; a source electrode and a drain electrode in contact with the oxide semiconductor layers having high carrier density; an insulating layer covering the source electrode, the drain electrode, and the oxide semiconductor layer; and a second gate electrode that is in contact with the insulating layer. Each of the oxide semiconductor layers is in contact with part of each of an upper surface, a lower surface, and a side surface of one of the end portions of the oxide semiconductor layer and part of an upper surface of the gate insulating layer.

Abstract: [Problem] To improve performance by making it possible to properly conduct minus crown paving work in a paving work width region in which paving work in a minus crown has been impossible in a leveling device which is provided with a main screed and a pair of extendable screeds having almost the same width as the width of the main screed and is of any type among a type in which the pair of extendable screeds is disposed behind the main screed, a type in which the pair of extendable screeds is disposed in front of the main screed, and a type in which one and the other of the pair of the extendable screeds are disposed, respectively, in front of and behind the main screed.

Abstract: The present invention provides an energy ray-curable ink composition excellent in the continuous discharge property, and excellent in curability and adherability. The present invention relates to an energy ray-curable ink composition which contains a coloring agent, contains only a monofunctional monomer having an acrylic equivalent of 300 or less, and having one ethylenic double bond in one molecule, and a polyfunctional monomer having an acrylic equivalent of 150 or less, and having two or more ethylenic double bonds in one molecule as a polymerizable compound, contains an ?-aminoalkylphenone compound and a thioxanthone compound as a photopolymerization initiator, and contains a silicone compound having a polydimethylsiloxane structure as a surface conditioner.

Abstract: A laser beam machining apparatus includes a height position detecting unit configured to detect the height position of an upper surface of a workpiece to be machined which is held on a chuck table, and a controller configured to control a condensing point position adjusting unit on the basis of a detection signal from the height position detecting unit. The height position detecting unit includes a detection laser beam oscillating unit configured to oscillate a detection laser beam having a wavelength different from the wavelength of the machining laser beam, and a reflected beam analyzing unit which analyzes a reflected beam generated upon reflection of the detection laser beam on the upper surface of the workpiece and which sends an analytical results to the controller. The laser beam machining apparatus further includes a condensing point position displacing unit configured to displace the condensing point position of the detection laser beam and the condensing point position of the machining laser beam.

Abstract: Provided is a laminated body, said laminated body being a laminated cloth the back surface of which has excellent properties against tangling and abrasion and good separability from the skin and which has a good texture and a favorable appearance and is comfortable to wear when made into clothing. The laminated cloth includes a front surface layer, a middle layer and a back surface layer, said layers being stacked one on another, wherein: the front surface layer comprises one member selected from the group consisting of a woven fabric, a knitted fabric and a non-woven fabric; the middle layer comprises a resin film or a non-woven fabric; and the back surface layer comprises a circular knitted fabric in which filament yarn of 60 dtex or less is used at least in part thereof and which is configured from knitting stitches and tack stitches, 9 to 72 said tack stitches being disposed per area of 12 wales×12 courses.