Abstract: A laser device includes a substrate including a principal surface and a recess provided in the principal surface; a laser oscillation unit fixed to the principal surface in direct contact with the principal surface or with an adhesive interposed between the laser oscillation unit and the principal surface, the laser oscillation unit having an emission surface from which laser light that diverges as the laser light travels is emitted along the principal surface; and a reflecting member fixed to a bottom surface of the recess and having an inclined surface that is inclined with respect to the principal surface so as to reflect the laser light. At least a portion of the inclined surface is positioned in a space inside the recess.

Abstract: A nitride semiconductor laser device sequentially includes, between a nitride semiconductor substrate and an n-side cladding layer, a first nitride semiconductor layer formed of an AlGaN layer, a second nitride semiconductor layer that is formed of an AlGaN layer and has a lower Al content than the first nitride semiconductor layer, a third nitride semiconductor layer formed of a GaN layer, a fourth nitride semiconductor layer formed of an InGaN layer, and a fifth nitride semiconductor layer formed of an AlGaN layer.

Abstract: A nitride semiconductor laser device sequentially includes, between a nitride semiconductor substrate and an n-side cladding layer, a first nitride semiconductor layer formed of an AlGaN layer, a second nitride semiconductor layer that is formed of an AlGaN layer and has a lower Al content than the first nitride semiconductor layer, a third nitride semiconductor layer formed of a GaN layer, a fourth nitride semiconductor layer formed of an InGaN layer, and a fifth nitride semiconductor layer formed of an AlGaN layer.

Abstract: A nitride semiconductor light-emitting device has a first conductive-type nitride semiconductor layer, a superlattice layer provided on the first conductive-type nitride semiconductor layer, an active layer provided on the superlattice layer, and a second conductive-type nitride semiconductor layer provided on the active layer. An average carrier concentration of the superlattice layer is higher than an average carrier concentration of the active layer.

Abstract: A nitride semiconductor element includes: a substrate having a concave-convex surface; a nitride semiconductor under-layer on the substrate; and a nitride semiconductor function layer on the nitride semiconductor under-layer. The nitride semiconductor under-layer includes a concave-convex face as the surface that is composed of inclined faces which are inclined at an angle of 50° to 65° to a C-plane. The nitride semiconductor function layer is provided on the concave-convex face of the nitride semiconductor under-layer.

Abstract: A nitride semiconductor light-emitting element including a high concentration silicon-doped layer doped with silicon at a high concentration of 2×1019 atoms/cm3, and a dislocation reduction layer for laterally bending a threading dislocation on the high concentration silicon-doped layer.

Abstract: Provided is a nitride semiconductor light-emitting element including in order a first n-type nitride semiconductor layer, a second n-type nitride semiconductor layer, an n-type electron-injection layer, a light-emitting layer, and a p-type nitride semiconductor layer, wherein the average n-type dopant concentration of the second n-type nitride semiconductor layer is 0.53 times or less as high as the average n-type dopant concentration of the first n-type nitride semiconductor layer, and the average n-type dopant concentration of the n-type electron-injection layer is 1.5 times or more as high as the average n-type dopant concentration of the second n-type nitride semiconductor layer.

Abstract: Provided is a nitride semiconductor light-emitting element including in order a first n-type nitride semiconductor layer, a second n-type nitride semiconductor layer, an n-type electron-injection layer, a light-emitting layer, and a p-type nitride semiconductor layer, wherein the average n-type dopant concentration of the second n-type nitride semiconductor layer is 0.53 times or less as high as the average n-type dopant concentration of the first n-type nitride semiconductor layer, and the average n-type dopant concentration of the n-type electron-injection layer is 1.5 times or more as high as the average n-type dopant concentration of the second n-type nitride semiconductor layer.

Abstract: A nitride semiconductor light emitting device is provided with a substrate having depression and projection, a base layer, and a structure of a stack of layers of nitride semiconductor at least having a light emitting layer sequentially. A cavity is provided in the base layer over a projection included in the depression and projection.

Abstract: A nitride semiconductor light-emitting device has a first conductive-type nitride semiconductor layer, a superlattice layer provided on the first conductive-type nitride semiconductor layer, an active layer provided on the superlattice layer, and a second conductive-type nitride semiconductor layer provided on the active layer. An average carrier concentration of the superlattice layer is higher than an average carrier concentration of the active layer.

Abstract: A nitride semiconductor light-emitting device has a first conductive-type nitride semiconductor layer, a superlattice layer provided on the first conductive-type nitride semiconductor layer, an active layer provided on the superlattice layer, and a second conductive-type nitride semiconductor layer provided on the active layer. An average carrier concentration of the superlattice layer is higher than an average carrier concentration of the active layer.

Abstract: A nitride semiconductor light-emitting element including a high concentration silicon-doped layer doped with silicon at a high concentration of 2×1019 atoms/cm3, and a dislocation reduction layer for laterally bending a threading dislocation on the high concentration silicon-doped layer.

Abstract: A lighting device for growing a plant includes: not less than two sorts of semiconductor light-emitting element, each having a peak emission wavelength in a range of 380 nm to 500 nm, the not less than two sorts of semiconductor light-emitting element being different from each other in peak emission wavelength by not less than 5 nm; and a red fluorescent material which (i) is excited by light of at least one of the not less than two sorts of semiconductor light-emitting element and (ii) has a peak emission wavelength in a range of 600 nm to 780 nm.

Abstract: A method of manufacturing a nitride semiconductor device includes the step of forming a second nitride semiconductor layer having an inclined facet by metal-organic chemical vapor deposition, in which a molar flow ratio of a group V element gas to a group III element gas that are supplied to a growth chamber of a metal-organic chemical vapor deposition growth apparatus is set at 240 or less.

Abstract: A nitride semiconductor light emitting diode includes at least an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer. The active layer is formed of one first nitride semiconductor layer having a highest In ratio in the light emitting diode. The light emitting diode further includes at least one of a second nitride semiconductor layer located between the active layer and the n-type nitride semiconductor layer and including an InGaN layer, and a third nitride semiconductor layer located between the active layer and the p-type nitride semiconductor layer and including an InGaN layer. Respective In (Indium) ratios of the InGaN layers included in the second nitride semiconductor layer and the InGaN layers included in the third nitride semiconductor layer are lower than the In ratio of the first nitride semiconductor layer forming the active layer. The LED with high luminous efficiency can thus be provided.

Abstract: A lighting device for growing a plant includes: not less than two sorts of semiconductor light-emitting element, each having a peak emission wavelength in a range of 380 nm to 500 nm, the not less than two sorts of semiconductor light-emitting element being different from each other in peak emission wavelength by not less than 5 nm; and a red fluorescent material which (i) is excited by light of at least one of the not less than two sorts of semiconductor light-emitting element and (ii) has a peak emission wavelength in a range of 600 nm to 780 nm.

Abstract: Described herein is a method for manufacturing a nitride semiconductor layer by stacking, on a silicon nitride layer, the first nitride semiconductor layer having a surface inclined with respect to the surface of the silicon nitride layer and then stacking the second nitride semiconductor layer on the first nitride semiconductor layer, a nitride semiconductor element and a nitride semiconductor light-emitting element each including the nitride semiconductor layer; and a method for manufacturing the nitride semiconductor element.

Abstract: A light emitting element for emitting at least two types of light having respective emission peak wavelengths which are different, by not less than 5 nm, from each other in the range of 400 nm to 570 nm, is provided in a fish preserve where fish is to be cultured.

Abstract: A method of manufacturing a nitride semiconductor device includes the step of forming a second nitride semiconductor layer having an inclined facet by metal-organic chemical vapor deposition, in which a molar flow ratio of a group V element gas to a group III element gas that are supplied to a growth chamber of a metal-organic chemical vapor deposition growth apparatus is set at 240 or less.

Abstract: A nitride semiconductor light-emitting device includes an n type nitride semiconductor layer, a light-emitting layer formed on the n type nitride semiconductor layer, a first p type nitride semiconductor layer formed on the light-emitting layer, an intermediate layer formed on the first p type nitride semiconductor layer to alternately cover and expose a surface of the first p type nitride semiconductor layer, and a second p type nitride semiconductor layer formed on the intermediate layer. The intermediate layer is made of a compound containing Si and N as constituent elements.