Abstract: An element isolation region for electrically isolating an element region where an element is to be formed is formed in a semiconductor substrate. A gate insulating film is formed on the semiconductor substrate in the element region. A gate electrode is formed on the gate insulating film. Source/drain regions are formed to be separated from each other in a surface region of the semiconductor substrate. The source/drain regions sandwich a channel region formed below the gate insulating film. Gate sidewall films are formed on the two side surfaces of the gate electrode. Silicide films are formed on the source/drain regions so as to be separated from the element isolation region.

Abstract: A semiconductor device is provided with a semiconductor substrate comprising element isolation regions and an element region surrounded by the element isolation regions, a first polysilicon layer formed in the element region of the semiconductor substrate, an element-isolating insulation film formed in the element isolation region of the semiconductor substrate, a second polysilicon layer formed on the element-isolating insulation film, a first silicide layer formed on the first polysilicon layer. And the device further comprising a second silicide layer formed on the second polysilicon layer and being thicker than the first silicide layer.

Abstract: According to an aspect of the present invention, there is provided a pattern design method of a semiconductor device, including preparing design pattern data, separating a pattern region of a semiconductor device on the basis of the design pattern data into a dummy pattern region and a dummy pattern prohibition region, dividing the dummy pattern region into dummy pattern unit regions, setting a plurality of inspection areas in the dummy pattern region and the dummy pattern prohibition region, the inspection area closing round at least the two or more dummy pattern unit regions, a part of the one dummy pattern unit region overlapping a part of another dummy pattern unit region, calculating a tentative pattern-covering fraction of a dummy pattern, the dummy pattern being formed of the dummy pattern unit region in the inspection area, calculating a final pattern-covering fraction of the dummy pattern unit region, the final pattern-covering fraction being obtained by averaging the tentative pattern-covering fract

Abstract: In a manufacturing method of semiconductor device, initially, a trench pattern is laid out along a <100> direction of a (100) silicon substrate. Next, a trench is formed in the silicon substrate based on the laid-out trench pattern. Further, the silicon substrate with the trench formed therein is annealed in a low-pressure reducing atmosphere to cause silicon migration. This reduces the radius of curvature of a corner portion of the formed trench pattern. Consequently, changes of the contact area with an electrode and a contact can be suppressed in an active area isolated by the trench pattern, and characteristic deterioration caused by changes of the contact area can be suppressed.

Abstract: A semiconductor device includes a gate insulating film formed on a semiconductor substrate between first diffusion layers, a gate electrode including a first gate portion formed on the gate insulating film and a second gate portion formed on the first gate portion, a first width in a channel direction of the first gate portion being substantially equal to a width in that of the gate insulating film, and a second width in the channel direction of the second gate portion being larger than the first width, a gate side wall insulating film including a first side wall portion formed on a side surface of the first gate portion and the gate insulating film and a second side wall portion formed on a side surface of the second gate portion, and a second diffusion layer formed apart from the first diffusion layers below the gate insulating film.

Abstract: A desulfurizing agent comprising a silica-alumina carrier having an Si/Al mole ratio of 10 or less and nickel carried thereon; a desulfurizing agent for hydrocarbons derived from petroleum which comprises a carrier and a metal component carried thereon and has a specific surface area of pores having a pore diameter of 3 nm or less of 100 m2/g or more; an Ni-Cu based desulfurizing agent comprising a carrier and, carried thereon, (A) nickel, (B) copper, and (C) an alkali metal or another metal; a desulfurizing agent for hydrocarbons derived from petroleum which comprises a carrier and a metal component carried thereon and has a hydrogen adsorption capacity of 0.4 mmol/g or more; and methods for producing these nickel-based and nickel-copper-based desulfurizing agents. The above desulfurizing agents are capable of adsorbing and removing with good efficiency the sulfur contained in hydrocarbons derived from petroleum to a content of 0.2 wt. ppm or less and have a long service life.

Abstract: An element isolation region for electrically isolating an element region where an element is to be formed is formed in a semiconductor substrate. A gate insulating film is formed on the semiconductor substrate in the element region. A gate electrode is formed on the gate insulating film. Source/drain regions are formed to be separated from each other in a surface region of the semiconductor substrate. The source/drain regions sandwich a channel region formed below the gate insulating film. Gate sidewall films are formed on the two side surfaces of the gate electrode. Silicide films are formed on the source/drain regions so as to be separated from the element isolation region.

Abstract: A semiconductor device includes a gate insulating film formed on a semiconductor substrate between first diffusion layers, a gate electrode including a first gate portion formed on the gate insulating film and a second gate portion formed on the first gate portion, a first width in a channel direction of the first gate portion being substantially equal to a width in that of the gate insulating film, and a second width in the channel direction of the second gate portion being larger than the first width, a gate side wall insulating film including a first side wall portion formed on a side surface of the first gate portion and the gate insulating film and a second side wall portion formed on a side surface of the second gate portion, and a second diffusion layer formed apart from the first diffusion layers below the gate insulating film.

Abstract: A method of producing semiconductor devices is provided, which makes it possible to bury a silicon oxide without shape deterioration in device isolation trenches. The method comprises the steps of: forming an etching resistive mask over a semiconductor substrate; etching the semiconductor substrate through an opening in the etching resistive mask to form a device isolation trench; forming a coat of a silazane perhydride polymer solution over the semiconductor substrate having the device isolation trench formed therein; vaporizing a solvent from the coat and then subjecting the coat to chemical reaction to form a film of silicon oxide; removing said film of the silicon oxide leaving a residue inside said device isolation trench; and heating said silicon oxide left in said device isolation trench for densification.

Abstract: A semiconductor device comprises static random access memory (SRAM) cells formed in a semiconductor substrate, first deep trenches isolating each boundary of an n-well and a p-well of the SRAM cells, second deep trenches isolating the SRAM cells into each unit bit cell, and at least one or more contacts taking substance voltage potentials in regions isolated by the first and second deep trenches. Then, the device becomes possible to improve a soft error resistance without increasing the device in size.

Abstract: A method of manufacturing a semiconductor device includes implanting germanium ions into a selected portion of a semiconductor region containing at least silicon, forming P-type and N-type diffusion layers in the semiconductor region, and forming a suicide film which extends from the N type diffusion layer over to the boundary region and the P-type diffusion layer. A boundary region between the P-type and N-type diffusion layers is formed in the selected portion.

Abstract: Torque necessary for cutting band-like paper is properly distributed to both of the preceding motor and the following motor, thereby making it possible to accurately cut the band-like paper.

Abstract: A semiconductor device includes a semiconductor substrate, cavities, and an element isolating region. The cavities, which are each shaped like a flat plate, are made in the semiconductor substrate. The element isolating region is formed in the surface of the semiconductor substrate and located at the sides of the cavities.

Abstract: A semiconductor device includes a semiconductor substrate, cavities, and an element isolating region. The cavities, which are each shaped like a flat plate, are made in the semiconductor substrate. The element isolating region is formed in the surface of the semiconductor substrate and located at the sides of the cavities.

Abstract: According to an aspect of the present invention, there is provided a pattern design method of a semiconductor device, including preparing design pattern data, separating a pattern region of a semiconductor device on the basis of the design pattern data into a dummy pattern region and a dummy pattern prohibition region, dividing the dummy pattern region into dummy pattern unit regions, setting a plurality of inspection areas in the dummy pattern region and the dummy pattern prohibition region, the inspection area closing round at least the two or more dummy pattern unit regions, a part of the one dummy pattern unit region overlapping a part of another dummy pattern unit region, calculating a tentative pattern-covering fraction of a dummy pattern, the dummy pattern being formed of the dummy pattern unit region in the inspection area, calculating a final pattern-covering fraction of the dummy pattern unit region, the final pattern-covering fraction being obtained by averaging the tentative pattern-covering fract

Abstract: A semiconductor device is provided with a semiconductor substrate comprising element isolation regions and an element region surrounded by the element isolation regions, a first polysilicon layer formed in the element region of the semiconductor substrate, an element-isolating insulation film formed in the element isolation region of the semiconductor substrate, a second polysilicon layer formed on the element-isolating insulation film, a first silicide layer formed on the first polysilicon layer. And the device further comprising a second silicide layer formed on the second polysilicon layer and being thicker than the first silicide layer.

Abstract: A semiconductor device includes a semiconductor substrate, cavities, and an element isolating region. The cavities, which are each shaped like a flat plate, are made in the semiconductor substrate. The element isolating region is formed in the surface of the semiconductor substrate and located at the sides of the cavities.

Abstract: A method of manufacturing a semiconductor device includes implanting germanium ions into a selected portion of a semiconductor region containing at least silicon, forming P-type and N-type diffusion layers in the semiconductor region, and forming a silicide film which extends from the N type diffusion layer over to the boundary region and the P-type diffusion layer. A boundary region between the P-type and N-type diffusion layers is formed in the selected portion.

Abstract: An element isolation region for electrically isolating an element region where an element is to be formed is formed in a semiconductor substrate. A gate insulating film is formed on the semiconductor substrate in the element region. A gate electrode is formed on the gate insulating film. Source/drain regions are formed to be separated from each other in a surface region of the semiconductor substrate. The source/drain regions sandwich a channel region formed below the gate insulating film. Gate sidewall films are formed on the two side surfaces of the gate electrode. Silicide films are formed on the source/drain regions so as to be separated from the element isolation region.

Abstract: A semiconductor device is disclosed. The device includes a semiconductor region and P-type and N-type diffusion layers formed in the semiconductor region. The semiconductor region includes a germanium low-concentration region containing germanium of low concentration and a germanium high-concentration region containing germanium of high concentration. A boundary region between the P-type and N-type diffusion layers lies in the germanium high-concentration region. A silicide film is formed to extend from the P-type diffusion layer over to the boundary region and the N-type diffusion layer.