Abstract: A vibration damping device including first and second attachment members connected by a main rubber elastic body. The second attachment member includes a main rubber outer member having a first tubular part fastened to an outer peripheral end of the main rubber elastic body, and a drawing fitting having a second tubular part attached externally about the first tubular part of the main rubber outer member. The first tubular part is axially inserted in the second tubular part, and the second tubular part is reduced in diameter to be fitted to an outer circumferential surface of the first tubular part. Fitted portions of the first tubular part and the second tubular part include respective tapered parts decreasing in diameter in a direction of dislodgment that is opposite to a direction of insertion of the first tubular part in the second tubular part.

Abstract: The invention addresses providing a technology that enables it to restrain a temperature rise because of current consumed by a quantum semiconductor and wiring conductors for control. A quantum calculator disclosed herein comprises a first refrigeration tube to cool a metal body; a refrigerator framing which encloses inside the metallic body and the first refrigeration tube; a quantum bit array chip having a plurality of silicon-spin quantum bits; and multiple control wiring conductors to drive the quantum bit array chip. The quantum bit array chip is placed on the metal body and made up of multiple regions and sub-regions, each of the regions performing a quantum operation independently. The multiple control wiring conductors are connected to the multiple regions and sub-regions respectively as multiple groups of control wiring conductors. The multiple control wring conductors are disposed across the first refrigeration tube.

Abstract: A storage system includes a controller part, a data storage part, and a transfer path of a signal that couples these parts. A driver included in the controller part transmits the signal including write data on the basis of a configured parameter, a receiver included in the data storage part receives the signal, and the write data included in the signal is written into a first storage area. The controller part reads the write data from the first storage area, determines whether or not a bit error exists in the write data, changes the parameter when the bit error exists to repeat similar determination and find an appropriate parameter at which the bit error no longer exists.

Abstract: A memory module having different types of memory mounted together on a double-sided substrate has a first edge and opposite second edge and includes a plurality of memory controllers, a plurality of flash memories, and a plurality of second memories having a higher signal transmission rate than the flash memories. A socket terminal for connecting the double-sided substrate to a motherboard is formed on the front surface and the back surface of the double-sided substrate on the first edge side; the memory controllers are disposed on the second edge side; the second memories are disposed on the second edge side at positions opposite the positions at which the memory controllers are disposed; and the flash memories are disposed on at least the back surface thereof at positions that are closer to the first edge than are the positions at which the memory controllers and the second memories are disposed.

Abstract: A storage system includes a controller part, a data storage part, and a transfer path of a signal that couples these parts. A driver included in the controller part transmits the signal including write data on the basis of a configured parameter, a receiver included in the data storage part receives the signal, and the write data included in the signal is written into a first storage area. The controller part reads the write data from the first storage area, determines whether or not a bit error exists in the write data, changes the parameter when the bit error exists to repeat similar determination and find an appropriate parameter at which the bit error no longer exists.

Abstract: In methods connecting a memory module configured from DRAM, which is high-speed memory, and a memory module configured from flash memory which is slower than DRAM but is high-capacity memory, to a CPU memory bus, in the case of sequential reading, the busy rate of the CPU memory bus increases, and performance degradation occurs easily. In the present invention, an information processing device has a CPU, a CPU memory bus, and a primary storage device. The primary storage device has a first memory module and a second memory module. The first memory module has high-speed memory. The second memory module has memory having the same memory interface as that of the high-speed memory, high-capacity memory having a different memory interface from that of the high-speed memory, and a controller that controls same. The first memory module and second memory module are caused to be accessed by the memory interface of the high-speed memory.

Abstract: A computer system includes a switch having a plurality of ports, a plurality of devices coupled to the plurality of ports, and a management system coupled to at least one of the plurality of devices and the switch. The coupling between the plurality of devices and the switch is a communication interface in which the number of master devices capable of existing in the same space is defined. The management system collects device coupling data of each of the plurality of devices coupled to the switch. Each of the device coupling data includes an ID of a port to which the device is coupled and information representing an attribute indicating whether the device is a master or a slave. The management system determines a coupling configuration on the basis of the plurality of the collected device coupling data and a communication interface protocol and, configures, to the switch, coupling information that is information in accordance with the determined coupling configuration.

Abstract: When DRAMs that are high-speed memories and flash memories that are lower in speed but can be larger in capacity than the DRAM are to be mounted on a DIMM, what matters in maximizing CPU memory bus throughput is the arrangement of the mounted components. The present disclosure provides a memory module (DIMM) that includes memory controllers arranged on the module surface closer to a socket terminal and DRAMs serving as high-speed memories arranged on the back surface. Nonvolatile memories as large-capacity memories are arranged on the side farther from the socket terminal.

Abstract: A computer system includes a switch having a plurality of ports, a plurality of devices coupled to the plurality of ports, and a management system coupled to at least one of the plurality of devices and the switch. The coupling between the plurality of devices and the switch is a communication interface in which the number of master devices capable of existing in the same space is defined. The management system collects device coupling data of each of the plurality of devices coupled to the switch. Each of the device coupling data includes an ID of a port to which the device is coupled and information representing an attribute indicating whether the device is a master or a slave. The management system determines a coupling configuration on the basis of the plurality of the collected device coupling data and a communication interface protocol and, configures, to the switch, coupling information that is information in accordance with the determined coupling configuration.

Abstract: A memory module having different types of memory mounted together on a double-sided substrate has a first edge and opposite second edge and includes a plurality of memory controllers, a plurality of flash memories, and a plurality of second memories having a higher signal transmission rate than the flash memories. A socket terminal for connecting the double-sided substrate to a motherboard is formed on the front surface and the back surface of the double-sided substrate on the first edge side; the memory controllers are disposed on the second edge side; the second memories are disposed on the second edge side at positions opposite the positions at which the memory controllers are disposed; and the flash memories are disposed on at least the back surface thereof at positions that are closer to the first edge than are the positions at which the memory controllers and the second memories are disposed.

Abstract: When DRAMs that are high-speed memories and flash memories that are lower in speed but can be larger in capacity than the DRAM are to be mounted on a DIMM, what matters in maximizing CPU memory bus throughput is the arrangement of the mounted components. The present disclosure provides a memory module (DIMM) that includes memory controllers arranged on the module surface closer to a socket terminal and DRAMs serving as high-speed memories arranged on the back surface. Nonvolatile memories as large-capacity memories are arranged on the side farther from the socket terminal.

Abstract: In methods connecting a memory module configured from DRAM, which is high-speed memory, and a memory module configured from flash memory which is slower than DRAM but is high-capacity memory, to a CPU memory bus, in the case of sequential reading, the busy rate of the CPU memory bus increases, and performance degradation occurs easily. In the present invention, an information processing device has a CPU, a CPU memory bus, and a primary storage device. The primary storage device has a first memory module and a second memory module. The first memory module has high-speed memory. The second memory module has memory having the same memory interface as that of the high-speed memory, high-capacity memory having a different memory interface from that of the high-speed memory, and a controller that controls same. The first memory module and second memory module are caused to be accessed by the memory interface of the high-speed memory.

Abstract: A data transmission system is provided in which it is possible to perform both of suppressing the degrading of the slew rate and suppressing the ringing even if load capacitance of an input buffer is changed. The data transmission system transmitting data from an output buffer to the input buffer through a trace is provided with first RC parallel circuits connected in series to the trace on a first Printed Circuit Board (PCB) on which the output buffer is mounted, and second RC parallel circuits connected in series to the trace on a second Printed Circuit Board (PCB) on which the input buffer is mounted, and which can be connected and separated to and from the first Printed Circuit Board (PCB).

Abstract: A CZTS-based thin film solar cell which has a high photovoltaic conversion efficiency which is provided with a substrate, a metal back electrode layer which is formed on the substrate, a p-type CZTS-based light absorption layer which is formed on the metal back electrode layer, and an n-type transparent conductive film which is formed on the p-type CZTS-based light absorption layer and which has a dispersed layer of ZnS-based fine particles at the interface between the p-type CZTS-based light absorption layer and the metal back electrode layer.

Abstract: A slew rate of a signal transmitted between a semiconductor device having a small load capacitance and a semiconductor device having a large load capacitance is improved. When a signal is transmitted to the semiconductor device (for example, a memory device) having the large load capacitance, pre-emphasis is performed, and when a signal is transmitted to the semiconductor device (for example, a memory controller) having the small load capacitance, pre-emphasis is not performed or is slightly performed. By this, when the signal is transmitted to the memory device, blunting in signal rising due to the load capacitance is suppressed, and when the signal is transmitted to the memory controller, ringing due to the reflection of the signal is suppressed, and the slew rate of the data transmission is improved.

Abstract: An equalizer circuit includes a passive equalizer having an inductor connected in parallel to a signal interconnection line, the inductor being made up of a conductor portion formed on a side face of a through-hole of a circuit board.

Abstract: A signal transmission system is provided which connects a memory controller and a plurality of semiconductor memories. The signal transmission system comprises a semiconductor device arranged between the memory controller and the plurality of memories, in which: the semi-conductor device comprises a control circuit; and the control circuit receives a signal from the semiconductor memory and outputs a control signal to the memory controller in response to the signal from the semiconductor memory.

Abstract: A signal transmission system is provided which connects a memory controller and a plurality of semiconductor memories. The signal transmission system comprises a semiconductor device arranged between the memory controller and the plurality of memories, in which: the semi-conductor device comprises a control circuit; and the control circuit receives a signal from the semiconductor memory and outputs a control signal to the memory controller in response to the signal from the semiconductor memory.

Abstract: An interposer to be mounted with an integrated circuit to be a test object is provided with a switch and a probe to detect an electric current corresponding to individual terminals of the integrated circuit. A test pattern signal is then inputted to the integrated circuit through a test substrate as a switch that is connected to a power supply terminal of the integrated circuit and that is turned off. If the integrated circuit normally operates and the current values of all the terminals of the integrated circuit are within a tolerance, the power supply terminal connected to the turned-off switch is identified as a terminal that may be removed.

Abstract: To suppress power consumption and enhance signal quality as compared with the case where first and second semiconductor elements are terminated only by on-chip input termination resistor circuits. A first semiconductor element with a switching function and a second semiconductor element with a switching function are connected to each other with a substrate interconnection, and a resistor element is connected in parallel with the substrate interconnection. The resistor element is placed at an arbitrary position or a branch point on the signal interconnection.