Abstract: According to one embodiment, a semiconductor device includes a stacked film with first insulating films and electrode layers alternately stacked in a first direction. The device further includes a columnar portion extending in the first direction and provided in a first region of the stacked film. The columnar portion forms memory cells at its intersections with the electrode layers. The device further includes a support column portion provided in a second region and extending in the first direction. A conductive plug is provided on a first electrode layer among the electrode layers in the second region. A first side surface of the support column portion faces a second side surface of the plug and the second side surface is concave in a direction toward the first side surface.

Abstract: A semiconductor memory device according to an embodiment, includes a plurality of semiconductor pillars extending in a first direction and being arranged along a second direction crossing the first direction, two interconnects extending in the second direction and being provided on two sides of the plurality of semiconductor pillars in a third direction crossing the first direction and the second direction, and an electrode film disposed between each of the semiconductor pillars and each of the interconnects. The two interconnects are drivable independently from each other.

Abstract: A semiconductor memory device includes a first stacked body, a second stacked body, an interposed portion, and a columnar body. The interposed portion is disposed between the first stacked body and the second stacked body. The columnar body includes a first columnar portion extending in a first direction inside the first stacked body, a second columnar portion extending in the first direction inside the second stacked body, and a connection portion disposed in the interposed portion and connecting the first columnar portion to the second columnar portion. At least part of the interposed portion has a first layer containing a first insulating material, a second layer disposed between the first layer and the second stacked body in the first direction and containing the first insulating material, and a third layer disposed between the first layer and the second layer in the first direction and containing a first material different from the first insulating material.

Abstract: An example operation includes one or more of receiving an opt-in request to display information on a display of a vehicle configured to be viewed from outside of the vehicle, authenticating the request to allow displaying information on the display, determining information associated with the vehicle to be displayed on the display, determining misuse of the information displayed on the display based on a notification from another vehicle, and flagging the misuse.

Abstract: Disclosed herein are apparatus for a system includes a main vehicle and a secondary vehicle configured to couple to the main vehicle. The secondary vehicle includes a wheel configured to move the secondary vehicle and a body coupled to the wheel. The body includes a first set of retractable bars. The first set of retractable bars are configured to extend into receivers of the main vehicle in a deactivated state. The first set of retractable bars are further configured to be disposed in the body in a retracted state. The first set of retractable bars are further configured to extend into a pod and lift the pod in an attached state.

Abstract: A memory device includes first and second conductive layers aligned in a first direction; a memory pillar including first and second portions serving as first and second memory cells in a region where the second conductive layer overlaps the first conductive layer in the first direction; a first insulating member arranged between the first and second conductive layers in a region where the second conductive layer does not overlap the first conductive layer in the first direction; and a second insulating member intersecting with the first conductive layer in a region where the second insulating member overlaps the first insulating member in the first direction. An upper end of the second insulating member is separated from a lower end of the first insulating member.

Abstract: According to one embodiment, a semiconductor memory device includes a first conductive layer, a second conductive layer, and at least one memory structure. The first conductive layer includes a first portion, a second portion, and a third portion, a fourth portion, and a fifth portion. The first portion is provided between the second portion and the third portion in a second direction. The second conductive layer includes a sixth portion, a seventh portion, and an eighth portion, a ninth portion, and a tenth portion. The sixth portion is provided between the seventh portion and the eighth portion in the second direction. The second portion is provided between the sixth portion and the eighth portion in the second direction.

Abstract: A semiconductor storage device includes: a first conductive layer and a second conductive layer arranged in a first direction; a plurality of first semiconductor layers facing the first conductive layer, the plurality of first semiconductor layers arranged in a second direction intersecting the first direction; a first charge storage layer disposed between the plurality of first semiconductor layers and the first conductive layer; and a first insulating layer provided between the plurality of first semiconductor layers and the first charge storage layer in the first direction. The first insulating layer includes a first region, a second region, and a third region provided between the first region and the second region in the second direction. A nitrogen concentration in the first region and the second region is lower than a nitrogen concentration in the third region.

Abstract: A location matching method is provided. The method comprises receiving one or more photos of one or more vacant properties and surroundings of the one or more vacant properties, processing the one or more photos of the one or more vacant properties and surroundings of the one or more vacant properties to extract features related to the surroundings of the one or more vacant properties, generating one or more tags descriptive of the one or more photos based on the features that are extracted, receiving a preference from a user, and generating for output to the user one or more recommended properties based on a comparison of the one or more tags and the preference.

Abstract: The disclosure includes embodiments for a medic system to respond to a medical condition of a vehicle occupant. A method according to some embodiments is executed by a processor. The method also includes determining, by the processor, that a driver of an ego vehicle is experiencing a debilitating medical condition. The method also includes overriding a protocol to decrease an autonomy level of the ego vehicle responsive to inattentiveness of the driver to a driving interface of the ego vehicle so that the driver can be inattentive to the driving interface and the autonomy level is not decreased. The method also includes modifying an operation of an autonomous driving system of the ego vehicle to increase the autonomy level of the ego vehicle to decrease a driving responsibility of the driver responsive to the debilitating medical condition.

Abstract: A semiconductor storage device includes: a first conductive layer extending in a first direction; a second conductive layer that is disposed apart from the first conductive layer in a second direction intersecting the first direction, and extends in the first direction; a plurality of semiconductor layers provided between the first conductive layer and the second conductive layer and arranged in the first direction, each of which includes a first portion facing the first conductive layer, and a second portion facing the second conductive layer; a plurality of first memory cells provided between the first conductive layer and the semiconductor layers, respectively; and a plurality of second memory cells provided between the second conductive layer and the semiconductor layers, respectively. A gap is provided between the two semiconductor layers adjacent in the first direction.

Abstract: A method includes receiving data indicating that a break-in attempt has occurred at one or more mobility units among a plurality of mobility units within a geographic area within a predetermined period of time, determining whether break-in attempts have occurred at more than a predetermined threshold number of the plurality of mobility units within the geographic area, and upon determination that break-in attempts have occurred at more than the predetermined threshold number of the plurality of mobility units within the geographic area, transmitting a signal to one or more mobility units of the plurality of mobility units within the geographic area to cause security lights associated with the one or more mobility units to illuminate.

Abstract: A semiconductor device of embodiments includes: a semiconductor layer containing silicon (Si); a first insulating layer provided in a first direction of the semiconductor layer; a second insulating layer surrounded by the semiconductor layer in a first cross section perpendicular to the first direction and containing silicon (Si) and oxygen (O); a third insulating layer surrounded by the second insulating layer in the first cross section and containing a metal element and oxygen (O); and a conductive layer surrounded by the first insulating layer in a second cross section perpendicular to the first direction, provided in the first direction of the third insulating layer, and spaced from the semiconductor layer.

Abstract: A semiconductor storage device includes a first conductive layer; a first insulating layer between the first and second conductive layers; a second insulating layer between the first conductive layer and the first insulating layer; a third insulating layer between the second conductive layer and the first insulating layer; a fourth insulating layer between the second conductive layer and the third conductive layer; a fifth insulating layer between the second conductive layer and the fourth insulating layer; and a sixth insulating layer between the third conductive layer and the fourth insulating layer. The first conductive layer has a first surface. The second conductive layer has a second surface. A barrier conductive film containing at least one of nitrogen (N) or titanium (Ti) is provided on the first surface and the second surface.

Abstract: Methods and systems for displaying contents on a screen of a vehicle are provided. The method includes obtaining geographic information and population information for an area, obtaining a user geographic preference and a user population preference for a content, generating a route of a vehicle that maximizes exposure of the vehicle to targeted population in the area based on the geographic information, the population information, the user geographic preference, and the user population preference, and operating the vehicle to follow the route and display the content on a screen disposed on an exterior of the vehicle while following the route.

Abstract: A telepresence robot is provided including a controller. The controller is programmed to, after establishing a remote connection with a remote user, monitor movement of a tracked individual, detect when the tracked individual has entered an office space, and upon determination that the tracked individual has entered the office space, identify the office space and transfer a connection with the remote user from the telepresence robot to a device in the office space.

Abstract: A semiconductor storage device includes a substrate, a first wiring, a second wiring, a third wiring, a fourth wiring, a charge storage unit. The first wiring extends in a first direction along a surface of the substrate. The second wiring is aligned with the first wiring in a second direction intersecting with the first direction and extends in the first direction. The third wiring is in contact with the first wiring and the second wiring and includes a semiconductor. The fourth wiring is located between the first wiring and the second wiring, extends in a third direction intersecting with the first direction and the second direction, and is aligned with the third wiring in at least the first direction. The charge storage unit is located between the third wiring and the fourth wiring.

Abstract: A semiconductor memory device includes a first semiconductor layer that includes a first part extending in a first direction, a second part extending in the first direction, and a third part connected to the first and second parts. When a cross-sectional surface extending in second and third directions and including the third part is defined as a first cross-sectional surface, the third part has one side and the other side of an imaginary center line in the third direction in the first cross-sectional surface defined as first and second regions, the third part has maximum widths in the second direction in the first and second regions defined as first and second widths, and the third part has a width in the second direction on the imaginary center line defined as a third width, the third width is smaller than the first and second widths.

Abstract: A semiconductor memory device includes a substrate, a semiconductor layer extending in a first direction, a first conductive layer extending in a second direction and opposed to the semiconductor layer, an electric charge accumulating layer disposed between the semiconductor layer and the first conductive layer, and a first contact electrode extending in the first direction and connected to the first conductive layer. The first contact electrode has one end in the first direction farther from the substrate than the first conductive layer, the other end in the first direction closer to the substrate than the first conductive layer. The first conductive layer includes a first part opposed to the semiconductor layer and a second part connected to the first contact electrode. The second part has a thickness in the first direction larger than a thickness in the first direction of the first part.

Abstract: A semiconductor memory device includes a first pillar. The first pillar includes a first portion and a second portion. The first portion includes a first semiconductor layer and a first insulating film on a side surface of the first semiconductor layer. The first pillar includes a first region that faces the first portion and a second region other than the first region. The second portion includes a first conductive film that is in contact with the first insulating film and a second insulating film. The second insulating film has a first thickness in a fourth direction within the second region and a second thickness in the second direction within the first region. The first thickness is greater than the second thickness.