Abstract: A memory device of a resistance variation type, in which data retaining characteristic at the time of writing is improved, is provided. The memory device includes: a plurality of memory elements in which a memory layer is provided between a first electrode and a second electrode so that data is written or erased in accordance with a variation in electrical characteristics of the memory layer; and pulse applying means applying a voltage pulse or a current pulse selectively to the plurality of memory elements. The memory layer includes an ion source layer including an ionic-conduction material and at least one kind of metallic element, and the ion source layer further contains oxygen.

Abstract: A memory cell is provided, in which a resistance value is appropriately controlled, thereby a variable resistance element may be applied with a voltage necessary for changing the element into a high or low resistance state. A storage element 10, a nonlinear resistance element 20, and an MOS transistor 30 are electrically connected in series. The storage element 10 has a nonlinear current-voltage characteristic opposite to a nonlinear current-voltage characteristic of the MOS transistor 30, and changes into a high or low resistance state in accordance with a polarity of applied voltage. The nonlinear resistance element 20 has a nonlinear current-voltage characteristic similar to the nonlinear current-voltage characteristic of the storage element 10.

Abstract: A technology which allows a reduction in the thermal resistance of a semiconductor device used in a radio communication device, and the miniaturization thereof is provided. For example, the semiconductor device can include a plurality of unit transistors Q, transistor formation regions 3a, 3b, and 3e each having a first number (e.g., seven) of the unit transistors Q, and transistor formation regions 3c and 3d each having a second number (e.g., four) of the unit transistors Q. The transistor formation regions 3c and 3d are located between the transistor formation regions 3a, 3b, 3e, and 3f, and the first number is larger than the second number.

Abstract: A water purifier that performs back washing extremely effectively even when raw water contains a large amount of impurities includes an attachment main body including an inflow passage into which raw water from an inflow port flows, and first and second outflow passages through which water flows toward outflow ports; and a water purification main body that is attached rotatably to the attachment main body and includes a first flow passage, a second flow passage, and a third flow passage, a first filter member disposed between the first flow passage and the second flow passage and a second filter member disposed between the second flow passage and the third flow passage, wherein, when the attachment main body and the water purification main body are in a rotation position corresponding to a water purification mode, the first flow passage and the second flow passage communicate with the inflow passage and the first outflow passage, respectively, and when the attachment main body and the water purification main

Abstract: A semiconductor optical communication module includes a semiconductor chip mounted on a chip carrier and a lens assembly having an end parallel to and facing the front edge of the chip carrier. The semiconductor chip has a front facet oriented at an acute angle to the front edge of the chip carrier. An optical waveguide in the semiconductor chip transmits an optical signal that propagates on an optical axis extending from the front facet of the semiconductor chip to the end of the lens assembly. The optical axis is orthogonal to the end of the lens assembly and the front edge of the chip carrier. The angled mounting of the semiconductor chip on the chip carrier allows the lens assembly to be placed close to the edge of the chip carrier, and to be moved for optical axis adjustment without striking the chip carrier.

Abstract: The present invention provides a fused heterocycle derivative having a strong Smo inhibitory activity, and use thereof. Specially, the present invention relates to a compound represented by the formula wherein each symbol is as defined in the specification, or salt thereof, and a medicament containing the compound or a prodrug thereof, which is an Smo inhibitor or an agent for the prophylaxis or treatment of cancer.

Abstract: The present invention provides a fused heterocycle derivative having a strong Smo inhibitory activity, and use thereof. Specially, the present invention relates to a compound represented by the formula wherein each symbol is as defined in the specification, or salt thereof, and a medicament containing the compound or a prodrug thereof, which is an Smo inhibitor or an agent for the prophylaxis or treatment of cancer.

Abstract: The present invention provides a fused heterocycle derivative having a strong Smo inhibitory activity, and use thereof. Specially, the present invention relates to a compound represented by the formula wherein each symbol is as defined in the specification, or salt thereof, and a medicament containing the compound or a prodrug thereof, which is an Smo inhibitor or an agent for the prophylaxis or treatment of cancer.

Abstract: The present invention provides a fused heterocycle derivative having a strong Smo inhibitory activity, and use thereof. Specially, the present invention relates to a compound represented by the formula wherein each symbol is as defined in the specification, or salt thereof, and a medicament containing the compound or a prodrug thereof, which is an Smo inhibitor or an agent for the prophylaxis or treatment of cancer.

Abstract: A technology which allows a reduction in the thermal resistance of a semiconductor device and the miniaturization thereof is provided. The semiconductor device has a plurality of unit transistors Q, transistor formation regions 3a, 3b, and 3e each having a first number (e.g., seven) of the unit transistors Q, and transistor formation regions 3c and 3d each having a second number (e.g., four) of the unit transistors Q. The transistor formation regions 3c and 3d are located between the transistor formation regions 3a, 3b, 3e, and 3f, and the first number is larger than the second number.

Abstract: A memory device of a resistance variation type, in which data retaining characteristic at the time of writing is improved, is provided. The memory device includes: a plurality of memory elements in which a memory layer is provided between a first electrode and a second electrode so that data is written or erased in accordance with a variation in electrical characteristics of the memory layer; and pulse applying means applying a voltage pulse or a current pulse selectively to the plurality of memory elements. The memory layer includes an ion source layer including an ionic-conduction material and at least one kind of metallic element, and the ion source layer further contains oxygen.

Abstract: A navigation apparatus that provides guidance along a route to a destination using a guidance image on which a plurality of guidance signs, respectively indicative of a guidance direction at a guidance point, are arranged in order of proximity to a current point, includes a setting unit that preliminarily sets a first given distance from the current point; an extracting unit that extracts a given guidance point on the route; a calculating unit that calculates a distance from the current point to the given guidance point extracted by the extracting unit; and a display control unit that when the distance to the given guidance point calculated by the calculating unit becomes equal to or less than the first given distance, changes a color of a guidance sign at the guidance point to a color different from an current display color.

Abstract: A sliding system with onboard moving-coil linear motor is disclosed in which an armature assembly is a printed-circuit board, armature windings of flat configuration and coil stay having a stay and any number of cores made integral with the stay. The armature assembly is held by virtue of the stay at a preselected location inside an interval defined between field magnet arrays and, therefore, is small and compact in height in transverse section. A bed formed in an angled hook-like configuration in a transverse section contributes to shrinkage of the sliding system in either of height and width in transverse section or most compactness of the sliding system in transverse dimension. Moreover, the bed can be selected in length at discretion according to the purpose of usage to provide any desirable stroke length for a single table of a preselected length, getting the sliding system convenient for usage.

Abstract: A memory element capable of simultaneously satisfying the number of repeating operation times and a low-voltage operation characteristic which are in a tradeoff relation is provided. The memory element has a high-resistivity layer and an ion source layer between a bottom electrode and a top electrode. The high-resistivity layer is made of an oxide containing Te. Any of elements other than Te such as Al, Zr, Ta, Hf, Si, Ge, Ni, Co, Cu, and Au may be added. In the case of adding Al to Te and also adding Cu and Zr, the composition ratio of the high-resistivity layer is preferably adjusted in the ranges of 30?Te?100 atomic %, 0?Al?70 atomic %, and 0?Cu+Zr?36 atomic % except for oxygen. The ion source layer is made of at least one kind of metal elements and at least one kind of chalcogen elements of Te, S, and Se.

Abstract: A wafer inspection device, which inspects the electrical properties of a semiconductor wafer on which a semiconductor integrated circuit is formed, and the wafer inspection device has: a holding mechanism for holding a probe card; a wafer stage that holds the semiconductor wafer on the upper surface and is movably provided; and a pressing mechanism that are held and press the wafer stage against the probe card. The wafer stage is provided on the outer periphery with a seal ring. The seal ring forms a sealed space in a state where the wafer and the probe card are brought close to each other by contacting the probe card and is provided in such a manner as to reduce the pressure of the sealed space.

Abstract: A reproduction apparatus that reproduces compressed audio data recorded in a recording medium inserts dummy data between data to be concatenated and reproduces the data when performing a specific reproduction of the data obtained by concatenating data which are discontinuously read from the recording medium.

Abstract: First electrodes partially configuring light-emitting elements are patterned in the form of stripes on a first major surface of a transparent substrate. Next, piezoelectric elements functioning a SAW touch sensor are formed on a second major surface of the transparent substrate. Next, the light-emitting elements forming step of forming light-emitting elements on the first electrodes which are patterned in advance is sequentially executed. After the formation of the piezoelectric elements, since the step of forming the light-emitting elements is executed, the light-emitting elements can be prevented from being damaged by receiving heat in the formation of the piezoelectric elements.

Abstract: Disclosed herein is a semiconductor memory device, including: a first electrode formed on a substrate; an ion source layer formed on an upper layer of the first electrode; and a second electrode formed on an upper layer of the ion source layer. Resistance change type memory cells in each of which either a surface of the first electrode or a surface of the ion source layer is oxidized to form a resistance change type memory layer in an interface between the first electrode and the ion source interface are arranged in a array.

Abstract: This vibration-damping device (10) includes: a first main body component (11) that is linked to a vibration receiving portion; a second main body component (12) that is placed on the opposite side from a vibration generating portion so as to sandwich the first main body component (11); a linking component (13) that penetrates through the first main body component (11) and mutually links together the second main body component (12) and the vibration generating portion; main body rubber (14) that elastically links together the first main body component (11) and the second main body component (12) and that has the linking component (13) inserted through its interior space (K); a tubular stopper fitting (15) that is provided on the first main body component (11) and that surrounds from the outward side in the radial direction a rod-shaped contact portion (16) that is provided in the linking component (13); and tubular stopper rubber (17) that is mounted on at least one of an inner surface of the stopper fitting (