Abstract: The present invention provides a cantilever having a base fixed to an inspecting apparatus, a beam protruding from the base, and a probe fixed to an end of the beam, wherein: the probe is formed by use of a carbon nanotube; and the probe is fixed by metal layers from at least two directions when the cantilever is operated, the probe protrudes in a direction in which a sample is fixed. It is possible to prevent the probe from warping and suppress image failures during observation of a sample.

Abstract: A retardation compensator 40 for compensating for residual retardation of a liquid crystal panel 11 includes a retardation compensating plate 50 having birefringence. An in-plane retardation R0c of the retardation compensating plate 50 and an in-plane retardation R0p of the liquid crystal panel 11 satisfy a relationship of 1<R0c/R0p?10, thereby allowing changes in the amount of compensated retardation among rotation angles occurring when the retardation compensating plate 50 is set with respect to the liquid crystal panel 11 to be confined within narrow limits. Therefore, the contrast can be adjusted readily, and variations in residual retardation among the individual liquid crystal panels 11 can be accommodated flexibly.

Abstract: There is provided a cleaning tape capable of attaining sufficient cleaning effects while preventing electrostatic discharge damage to magnetoresistive heads or changes in reproduced output due to excessive head wear. The cleaning tape includes a non-magnetic substrate 1, surface protrusions 6 formed on the non-magnetic substrate 1 with particles 2 having a particle diameter of 10 to 40 nm at a density of 300×104 to 5000×104 mm2, a metal evaporated film 3 (preferably an electrically conductive layer such as an alloy layer containing Co as a primary component, an Al layer or the like) having a thickness of 10 to 200 nm and an inorganic protection film 4 having a thickness of 3 to 50 nm formed on the metal evaporated film 3.

Abstract: A laminated substrate is formed by laminating a device formation layer made of single crystalline semiconductor on a supporting substrate made of single crystalline semiconductor via an insulating layer with making one direction of a crystallographic axis of the device formation layer be shifted from a corresponding direction of a crystallographic axis of the supporting substrate. Semiconductor devices are formed in the device formation layer within a plurality of areas divided by scribe lines extending to a direction being parallel to a direction of a crystallographic axis where the supporting substrate is easy to be cleaved. The laminated substrate is split into a plurality of chips by cleaving the supporting substrate along the scribe lines. A semiconductor device can easily be split into chips even if a moving direction of carrier and an extending direction of wiring are shifted from an easy-cleaved direction of a crystallographic axis.

Abstract: A method for fabricating a semiconductor device comprises the steps of forming a polysilicon film 32 on a silicon substrate 10, implanting a dopant into a region of the polysilicon film 32 for a resistance element to be formed in, patterning the polysilicon film 32 to from the resistance element 46 of the polysilicon film 32 with the dopant inplanted in and gate electrodes 44a, 44b of the polysilicon film 32 with the dopant not implanted in. Accordingly, resistance element can be formed while suppressing influences on characteristics of the transistor formed on one and the same substrate concurrently with forming the resistance element.

Abstract: There is provided a cleaning tape capable of attaining sufficient cleaning effects while preventing electrostatic discharge damage to magnetoresistive heads or changes in reproduced output due to excessive head wear. The cleaning tape includes a non-magnetic substrate 1, surface protrusions 6 formed on the non-magnetic substrate 1 with particles 2 having a particle diameter of 10 to 40 nm at a density of 300×104 to 5000×104 mm2, a metal evaporated film 3 (preferably an electrically conductive layer such as an alloy layer containing Co as a primary component, an Al layer or the like) having a thickness of 10 to 200 nm and an inorganic protection film 4 having a thickness of 3 to 50 nm formed on the metal evaporated film 3.

Abstract: A cleaning tape comprising a nonmagnetic base film, an evaporated metal layer, specifically a magnetic layer or electroconductive layer, formed on the nonmagnetic base film, an inorganic protective film formed on the evaporated metal layer, and surface projections formed on the nonmagnetic base film by particles having a predetermined diameter and density. The tape has a low electric resistivity, a low head abrasion, and a sufficient cleaning effect suitable for cleaning a magnetoresistive type head.

Abstract: A method for fabricating a semiconductor device comprises the steps of forming a polysilicon film 32 on a silicon substrate 10, implanting a dopant into a region of the polysilicon film 32 for a resistance element to be formed in, patterning the polysilicon film 32 to from the resistance element 46 of the polysilicon film 32 with the dopant inplanted in and gate electrodes 44a, 44b of the polysilicon film 32 with the dopant not implanted in. Accordingly, resistance element can be formed while suppressing influences on characteristics of the transistor formed on one and the same substrate concurrently with forming the resistance element.

Abstract: A laminated substrate is formed by laminating a device formation layer made of single crystalline semiconductor on a supporting substrate made of single crystalline semiconductor via an insulating layer with making one direction of a crystallographic axis of the device formation layer be shifted from a corresponding direction of a crystallographic axis of the supporting substrate. Semiconductor devices are formed in the device formation layer within a plurality of areas divided by scribe lines extending to a direction being parallel to a direction of a crystallographic axis where the supporting substrate is easy to be cleaved. The laminated substrate is split into a plurality of chips by cleaving the supporting substrate along the scribe lines. A semiconductor device can easily be split into chips even if a moving direction of carrier and an extending direction of wiring are shifted from an easy-cleaved direction of a crystallographic axis.

Abstract: A laminated substrate is formed by laminating a device formation layer made of single crystalline semiconductor on a supporting substrate made of single crystalline semiconductor via an insulating layer with making one direction of a crystallographic axis of the device formation layer be shifted from a corresponding direction of a crystallographic axis of the supporting substrate. Semiconductor devices are formed in the device formation layer within a plurality of areas divided by scribe lines extending to a direction being parallel to a direction of a crystallographic axis where the supporting substrate is easy to be cleaved. The laminated substrate is split into a plurality of chips by cleaving the supporting substrate along the scribe lines. A semiconductor device can easily be split into chips even if a moving direction of carrier and an extending direction of wiring are shifted from an easy-cleaved direction of a crystallographic axis.

Abstract: A laminated substrate is formed by laminating a device formation layer made of single crystalline semiconductor on a supporting substrate made of single crystalline semiconductor via an insulating layer with making one direction of a crystallographic axis of the device formation layer be shifted from a corresponding direction of a crystallographic axis of the supporting substrate. Semiconductor devices are formed in the device formation layer within a plurality of areas divided by scribe lines extending to a direction being parallel to a direction of a crystallographic axis where the supporting substrate is easy to be cleaved. The laminated substrate is split into a plurality of chips by cleaving the supporting substrate along the scribe lines. A semiconductor device can easily be split into chips even if a moving direction of carrier and an extending direction of wiring are shifted from an easy-cleaved direction of a crystallographic axis.

Abstract: A cleaning tape comprising a nonmagnetic base film, an evaporated metal layer, specifically a magnetic layer or electroconductive layer, formed on the nonmagnetic base film, an inorganic protective film formed on the evaporated metal layer, and surface projections formed on the nonmagnetic base film by particles having a predetermined diameter and density. The tape has a low electric resistivity, a low head abrasion, and a sufficient cleaning effect suitable for cleaning a magnetoresistive type head.

Abstract: A vehicular automotive soil treating machine having a main frame structure provided on an automotive drive means to support thereon a soil feeding stage including at least a soil hopper and an additive hopper for feeding soil and an additive soil improving material, a soil processing stage including a soil processing trough which is internally provided with a mixing device for mixing soil and additive material while being transferred from one to the other end of the soil processing trough, and a processed soil discharging stage including a soil discharging conveyer for transferring processed soil of improved quality in a predetermined direction. The soil processing trough is provided with an inlet opening on the upper side of its fore end portion to receive soil and additive material therethrough, and an outlet opening on the bottom side of its rear end portion to discharge processed soil of improved quality toward the discharging conveyer.

Abstract: A vehicular soil treating machine having a base carrier with a crawler type vehicle drive, an upper rotary body rotatably mounted on the base carrier, and an excavation means mounted on the upper rotary body and equipped with a soil excavating bucket. Provided on the base carrier is an elongated continuous soil processing trough having a predetermined length in the longitudinal direction of the base carrier and internally provided with a tumbling/mixing means for uniformly mixing additive soil improving material into sand and soil which is fed from the excavation means. A soil hopper is provided over one end of the continuous processing trough, and an additive feed means is located behind the soil hopper to feed additive soil improving material to the continuous processing trough.