Abstract: A control device for a moving body includes a control unit configured to communicate with an information terminal which is portable for a user of the moving body, and perform movement control on the moving body and charge control on a power supply device. The control unit is configured to start the moving body and the charge control, and, in response to receiving an action plan, if a progress state of the charge control does not reach a predetermined state, cause a display unit of the information terminal to display a third display image indicating the progress state, and if the progress state reaches the predetermined state, cause the display unit not to display the third display image, or cause the display unit to display it in an inconspicuous manner in comparison to a case where the progress state does not reach the predetermined state.

Abstract: There is provided a technique that includes forming a film containing silicon, oxygen, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times, the cycle including: forming a first layer containing silicon, carbon, and nitrogen by performing a set a predetermined number of times, the set including: supplying a first precursor, which contains at least two Si—N bonds and at least one Si—C bond in one molecule, to the substrate; and supplying a second precursor, which contains nitrogen and hydrogen, to the substrate; and forming a second layer by supplying an oxidant to the substrate, to thereby oxidize the first layer.

Abstract: A method of manufacturing a semiconductor device includes: providing a substrate that includes a surface exposing a first film containing silicon, oxygen, carbon and nitrogen and having an oxygen atom concentration higher than a silicon atom concentration, which is higher than a carbon atom concentration, which is equal to or higher than a nitrogen atom concentration; and changing a composition of a surface of the first film so that the nitrogen atom concentration becomes higher than the carbon atom concentration on the surface of the first film, by supplying a plasma-excited nitrogen-containing gas to the surface of the first film.

Abstract: Provided is a technique which includes forming on a substrate an oxide film containing silicon or a metal element and doped with a dopant by performing a cycle a predetermined number of times, wherein the cycle includes sequentially and non-simultaneously performing: (a) supplying a first gas to the substrate wherein the first gas is free of chlorine and contains boron or phosphorus as the dopant; (b) supplying a second gas to the substrate wherein the second gas contains silicon or the metal element; and (c) supplying a third gas to the substrate wherein the third gas contains oxygen.

Abstract: There is provided a technique that includes forming a film containing silicon, oxygen, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times, the cycle including: forming a first layer containing silicon, carbon, and nitrogen by performing a set a predetermined number of times, the set including: supplying a first precursor, which contains at least two Si—N bonds and at least one Si—C bond in one molecule, to the substrate; and supplying a second precursor, which contains nitrogen and hydrogen, to the substrate; and forming a second layer by supplying an oxidant to the substrate, to thereby oxidize the first layer.

Abstract: There is provided a technique that includes: (a) supplying a hydrogen gas to a substrate set to a first temperature, without supplying any oxygen-containing gas; (b) changing a temperature of the substrate from the first temperature to a second temperature, which is higher than the first temperature, while the hydrogen gas is supplied to the substrate, without supplying any oxygen-containing gas; and (c) forming an oxide film on the substrate, on which (a) and (b) have been performed, by alternately repeating, while the temperature of the substrate is maintained at the second temperature: supplying a precursor gas to the substrate; and supplying an oxygen-containing gas to the substrate, without supplying any hydrogen-containing gas.

Abstract: There is provided a method of manufacturing a semiconductor device, including forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing supplying a precursor gas to the substrate; and supplying a first oxygen-containing gas to the substrate. Further, the act of supplying the precursor gas includes a time period in which the precursor gas and a second oxygen-containing gas are simultaneously supplied to the substrate.

Abstract: A substrate processing apparatus includes: a single frequency process chamber installed inside a process module and for processing a substrate on which an insulating film is formed; a two-frequency process chamber installed adjacent to the single frequency process chamber inside the process module and for processing the substrate processed in the single frequency process chamber; a gas supply part configured to supply a silicon-containing gas containing at least silicon and an impurity to each of the process chambers; a plasma generation part connected to each of the process chambers; an ion control part connected to the two-frequency process chamber; a substrate transfer part installed inside the process module and configured to transfer the substrate between the single frequency process chamber and the two-frequency process chamber; and a controller configured to control at least the gas supply part, the plasma generation part, the ion control part, and the substrate transfer part.

Abstract: There is provided a technique that includes forming a nitride film on a pattern including a concave portion formed in a surface of a substrate by repeating a cycle. The cycle includes non-simultaneously performing: (a) forming a first layer by supplying a precursor gas to the substrate; (b) forming an NH-terminated second layer by supplying a hydrogen nitride-based gas to the substrate to nitride the first layer; and (c) modifying a part of the NH termination to an N termination, and maintaining another part of the NH termination as it is without modifying the another part to the N termination by plasma-exciting and supplying a nitrogen gas to the substrate, wherein in (c), an N termination ratio in an upper portion of the concave portion of the pattern is made higher than an N termination ratio in a lower portion of the concave portion of the pattern.

Abstract: There is provided a technique that includes: (a) supplying a hydrogen gas to a substrate set to a first temperature, without supplying any oxygen-containing gas; (b) changing a temperature of the substrate from the first temperature to a second temperature, which is higher than the first temperature, while the hydrogen gas is supplied to the substrate, without supplying any oxygen-containing gas; and (c) forming an oxide film on the substrate, on which (a) and (b) have been performed, by alternately repeating, while the temperature of the substrate is maintained at the second temperature: supplying a precursor gas to the substrate; and supplying an oxygen-containing gas to the substrate, without supplying any hydrogen-containing gas.

Abstract: A method of manufacturing a semiconductor device, includes forming a film containing a predetermined element on a substrate by supplying a precursor containing the predetermined element to the substrate having a first temperature in a process chamber, changing a temperature of the substrate to a second temperature higher than the first temperature under an atmosphere containing a first oxygen-containing gas in the process chamber, and oxidizing the film while maintaining the temperature of the substrate at the second temperature under an atmosphere containing a second oxygen-containing gas in the process chamber.

Abstract: There is provided a method of manufacturing a semiconductor device, which includes: forming a first seed layer containing silicon and germanium on a substrate by performing, a predetermined number of times, a cycle which includes supplying a first process gas containing silicon or germanium and containing a halogen element to the substrate, supplying a second process gas containing silicon and not containing a halogen element to the substrate, and supplying a third process gas containing germanium and not containing a halogen element to the substrate; and forming a germanium-containing film on the first seed layer by supplying a fourth process gas containing germanium and not containing a halogen element to the substrate.

Abstract: Described herein is a technique capable of suppressing the deviation in the characteristic of the semiconductor device. A method of manufacturing a semiconductor device may include: (a) receiving a data obtained by measuring a width of a first pillar between first grooves in a center region of a substrate and a width of a second pillar between second grooves in a peripheral region of the substrate; and (b) forming a width adjusting film on surfaces of the first grooves and the second grooves such that a sum of the width of the first pillar and a thickness of a first portion of the width adjusting film in the center region and a sum of the width of the second pillar and a thickness of a second portion of the width adjusting film in the peripheral region are within a predetermined range.

Abstract: A method of manufacturing a semiconductor device includes: providing a substrate that includes a surface exposing a first film containing silicon, oxygen, carbon and nitrogen and having an oxygen atom concentration higher than a silicon atom concentration, which is higher than a carbon atom concentration, which is equal to or higher than a nitrogen atom concentration; and changing a composition of a surface of the first film so that the nitrogen atom concentration becomes higher than the carbon atom concentration on the surface of the first film, by supplying a plasma-excited nitrogen-containing gas to the surface of the first film.

Abstract: A technique includes forming a laminated film on a substrate by performing a cycle a predetermined number of times. The cycle includes forming a first film which contains at least a predetermined element and oxygen, and forming a second film which contains at least the predetermined element, oxygen and carbon. The first film and the second film are laminated to form the laminated film.

Abstract: There is provided a method of manufacturing a semiconductor device which includes: supplying a process gas to a process chamber in a state in which a substrate with an insulating film formed thereon is mounted on a substrate support part inside the process chamber; supplying a first power from a plasma generation part to the process chamber to generate plasma and forming a first silicon nitride layer on the insulating film; and supplying a second power from an ion control part to the process chamber in parallel with the generation of plasma, to form a second silicon nitride layer having lower stress than that of the first silicon nitride layer on the first silicon nitride layer.

Abstract: There is provided a technique that includes forming a nitride film on a pattern including a concave portion formed in a surface of a substrate by repeating a cycle. The cycle includes non-simultaneously performing: (a) forming a first layer by supplying a precursor gas to the substrate; (b) forming an NH-terminated second layer by supplying a hydrogen nitride-based gas to the substrate to nitride the first layer; and (c) modifying a part of the NH termination to an N termination, and maintaining another part of the NH termination as it is without modifying the another part to the N termination by plasma-exciting and supplying a nitrogen gas to the substrate, wherein in (c), an N termination ratio in an upper portion of the concave portion of the pattern is made higher than an N termination ratio in a lower portion of the concave portion of the pattern.

Abstract: A method of manufacturing a semiconductor device, includes: loading a substrate including a laminated film including an insulating film and a sacrificial film, a channel hole formed in the laminated film, a charge trapping film formed on a surface in the channel hole, a first channel film formed on a surface of the charge trapping film, and a common source line exposed on the bottom of the channel hole; receiving information on a distribution of hole diameter of the channel hole; and forming a second channel film on a surface of the first channel film by supplying a first processing gas and a second processing gas to a center side and an outer peripheral side of the substrate, respectively, so as to correct the distribution of the hole diameter based on the information.

Abstract: A substrate processing apparatus includes: a single frequency process chamber installed inside a process module and for processing a substrate on which an insulating film is formed; a two-frequency process chamber installed adjacent to the single frequency process chamber inside the process module and for processing the substrate processed in the single frequency process chamber; a gas supply part configured to supply a silicon-containing gas containing at least silicon and an impurity to each of the process chambers; a plasma generation part connected to each of the process chambers; an ion control part connected to the two-frequency process chamber; a substrate transfer part installed inside the process module and configured to transfer the substrate between the single frequency process chamber and the two-frequency process chamber; and a controller configured to control at least the gas supply part, the plasma generation part, the ion control part, and the substrate transfer part.

Abstract: A technique includes forming a film containing a first element, a second element, and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first solid layer containing the first element and carbon, and having a thickness of more than one atomic layer and equal to or less than several atomic layers, by supplying a precursor gas having a chemical bond of the first element and carbon to the substrate and confining the precursor gas within the process chamber, under a condition in which the precursor gas is autolyzed and at least a part of the chemical bond of the first element and carbon is maintained without being broken; and forming a second solid layer by supplying a reaction gas containing the second element to the substrate to modify the first solid layer.