Patents by Inventor Satoshi Shimatani
Satoshi Shimatani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10678129Abstract: A composition for nanoimprint including a cycloolefin-based copolymer; a polymerizable monomer; and a photoinitiator. The polymerizable monomer of the present invention may include a polyfunctional monomer, and the cycloolefin-based copolymer may include a constituent unit having a cyclic olefin and a constituent unit having an acyclic olefin.Type: GrantFiled: June 6, 2016Date of Patent: June 9, 2020Assignee: TOKYO OHKA KOGYO CO., LTD.Inventor: Satoshi Shimatani
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Patent number: 9929317Abstract: Provided is a deep ultraviolet LED with a design wavelength ?, including an Al reflecting electrode layer, an ultrathin metal layer, and a transparent p-AlGaN contact layer that are sequentially arranged from a side opposite to a substrate, and a photonic crystal periodic structure provided in the range of the thickness direction of the transparent p-AlGaN contact layer. The photonic crystal periodic structure has a photonic band gap.Type: GrantFiled: July 29, 2015Date of Patent: March 27, 2018Assignees: MARUBUN CORPORATION, TOSHIBA KIKAI KABUSHIKI KAISHA, RIKEN, ULVAC, INC., TOKYO OHKA KOGYO CO., LTD.Inventors: Yukio Kashima, Eriko Matsuura, Mitsunori Kokubo, Takaharu Tashiro, Takafumi Ookawa, Hideki Hirayama, Noritoshi Maeda, Masafumi Jo, Ryuichiro Kamimura, Yamato Osada, Satoshi Shimatani
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Patent number: 9929311Abstract: A semiconductor light emitting element with a design wavelength of ?, comprising a photonic crystal periodic structure having two structures with different refractive indices at each of one or more interfaces between layers that form the light emitting element. The period a and the radius R that are parameters of each of the one or more periodic structures and the design wavelength ? satisfy Bragg conditions. The ratio (R/a) between the period a and the radius R is a value determined so that a predetermined photonic band gap (PBG) for TE light becomes maximum for each periodic structure. The parameters of each periodic structure are determined so that light extraction efficiency of the entire semiconductor light emitting element with respect to light with the wavelength ? becomes maximum as a result of conducting a simulation analysis with a FDTD method using as variables the depth h of the periodic structure that is of greater than or equal to 0.Type: GrantFiled: July 16, 2014Date of Patent: March 27, 2018Assignees: MARUBUN CORPORATION, TOSHIBA KIKAI KABUSHIKI KAISHA, RIKEN, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE & TECHNOLOGY, ULVAC, INC., TOKYO OHKA KOGYO CO., LTD.Inventors: Yukio Kashima, Eriko Matsuura, Mitsunori Kokubo, Takaharu Tashiro, Takafumi Ookawa, Hideki Hirayama, Sung Won Youn, Hideki Takagi, Ryuichiro Kamimura, Yamato Osada, Satoshi Shimatani
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Patent number: 9806229Abstract: A deep ultraviolet LED with a design wavelength of ? is provided that includes a reflecting electrode layer, a metal layer, a p-type GaN contact layer, and a p-type AlGaN layer that are sequentially stacked from a side opposite to a substrate, the p-type AlGaN layer being transparent to light with the wavelength of ?; and a photonic crystal periodic structure that penetrates at least the p-type GaN contact layer and the p-type AlGaN layer. The photonic crystal periodic structure has a photonic band gap.Type: GrantFiled: October 24, 2014Date of Patent: October 31, 2017Assignees: MARUBUN CORPORATION, TOSHIBA KIKAI KABUSHIKI KAISHA, RIKEN, ULVAC, INC., TOKYO OHKA KOGYO CO., LTD.Inventors: Yukio Kashima, Eriko Matsuura, Mitsunori Kokubo, Takaharu Tashiro, Takafumi Ookawa, Hideki Hirayama, Ryuichiro Kamimura, Yamato Osada, Satoshi Shimatani
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Patent number: 9728677Abstract: A deep ultraviolet LED with a design wavelength of ? is provided that includes a reflecting electrode layer, a metal layer, a p-type GaN contact layer, and a p-type AlGaN layer that are sequentially stacked from a side opposite to a substrate, the p-type AlGaN layer being transparent to light with the wavelength of ?; and a photonic crystal periodic structure that penetrates at least the p-type GaN contact layer and the p-type AlGaN layer. The photonic crystal periodic structure has a photonic band gap.Type: GrantFiled: October 24, 2014Date of Patent: August 8, 2017Assignees: MARUBUN CORPORATION, TOSHIBA KIKAI KABUSHIKI KAISHA, RIKEN, ULVAC, INC., TOKYO OHKA KOGYO CO., LTD.Inventors: Yukio Kashima, Eriko Matsuura, Mitsunori Kokubo, Takaharu Tashiro, Takafumi Ookawa, Hideki Hirayama, Ryuichiro Kamimura, Yamato Osada, Satoshi Shimatani
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Patent number: 9614123Abstract: A deep ultraviolet LED with a design wavelength of ? is provided that includes a reflecting electrode layer, a metal layer, a p-type GaN contact layer, and a p-type AlGaN layer that are sequentially stacked from a side opposite to a substrate, the p-type AlGaN layer being transparent to light with the wavelength of ?; and a photonic crystal periodic structure that penetrates at least the p-type GaN contact layer and the p-type AlGaN layer. The photonic crystal periodic structure has a photonic band gap.Type: GrantFiled: October 24, 2014Date of Patent: April 4, 2017Assignees: MARUBUN CORPORATION, TOSHIBA KIKAI KABUSHIKI KAISHA, RIKEN, ULVAC, INC., TOKYO OHKA KOGYO CO., LTD.Inventors: Yukio Kashima, Eriko Matsuura, Mitsunori Kokubo, Takaharu Tashiro, Takafumi Ookawa, Hideki Hirayama, Ryuichiro Kamimura, Yamato Osada, Satoshi Shimatani
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Publication number: 20160363858Abstract: A composition for nanoimprint including a cycloolefin-based copolymer; a polymerizable monomer; and a photoinitiator. The polymerizable monomer of the present invention may include a polyfunctional monomer, and the cycloolefin-based copolymer may include a constituent unit having a cyclic olefin and a constituent unit having an acyclic olefin.Type: ApplicationFiled: June 6, 2016Publication date: December 15, 2016Inventor: Satoshi SHIMATANI
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Publication number: 20160133785Abstract: A deep ultraviolet LED with a design wavelength of ? is provided that includes a reflecting electrode layer, a metal layer, a p-type GaN contact layer, and a p-type AlGaN layer that are sequentially stacked from a side opposite to a substrate, the p-type AlGaN layer being transparent to light with the wavelength of ?; and a photonic crystal periodic structure that penetrates at least the p-type GaN contact layer and the p-type AlGaN layer. The photonic crystal periodic structure has a photonic band gap.Type: ApplicationFiled: October 24, 2014Publication date: May 12, 2016Inventors: Yukio KASHIMA, Eriko MATSUURA, Mitsunori KOKUBO, Takaharu TASHIRO, Takafumi OOKAWA, Hideki HIRAYAMA, Ryuichiro KAMIMURA, Yamato OSADA, Satoshi SHIMATANI
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Publication number: 20160042102Abstract: A semiconductor light emitting element with a design wavelength of ?, comprising a photonic crystal periodic structure having two structures with different refractive indices at each of one or more interfaces between layers that form the light emitting element. The period a and the radius R that are parameters of each of the one or more periodic structures and the design wavelength ? satisfy Bragg conditions. The ratio (R/a) between the period a and the radius R is a value determined so that a predetermined photonic band gap (PBG) for TE light becomes maximum for each periodic structure. The parameters of each periodic structure are determined so that light extraction efficiency of the entire semiconductor light emitting element with respect to light with the wavelength ? becomes maximum as a result of conducting a simulation analysis with a FDTD method using as variables the depth h of the periodic structure that is of greater than or equal to 0.Type: ApplicationFiled: July 16, 2014Publication date: February 11, 2016Inventors: Yukio KASHIMA, Eriko MATSUURA, Mitsunori KOKUBO, Takaharu TASHIRO, Takafumi OOKAWA, Hideki HIRAYAMA, Won Sung YOUN, Hideki TAKAGI, Ryuichiro KAMIMURA, Yamato OSADA, Satoshi SHIMATANI
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Patent number: 7358028Abstract: The present invention provides a chemical amplification type positive photoresist composition which is excellent in storage stability as a resist solution in a bottle. A novolak resin or a hydroxystyrenic resin is reacted with a crosslinking agent to give a slightly alkali-soluble or alkali-insoluble resin having such a property that solubility in an aqueous alkali solution is enhanced in the presence of an acid, which is then dissolved in an organic solvent, together with (B) a compound generating an acid under irradiation with radiation to obtain a chemical amplification type positive photoresist composition wherein the content of an acid component is 10 ppm or less.Type: GrantFiled: May 19, 2004Date of Patent: April 15, 2008Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Kenji Maruyama, Masaki Kurihara, Ken Miyagi, Satoshi Niikura, Satoshi Shimatani, Masahiro Masujima, Kazuyuki Nitta, Toshihiro Yamaguchi, Kousuke Doi
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Patent number: 7329478Abstract: To provide a chemical amplification type positive photoresist composition, which has high sensitivity, high heat resistance and high resolution (high contrast) and is capable of suppressing an undulation phenomenon, and a method for formation of a resist pattern, a chemical amplification type positive photoresist composition comprising (A) an alkali soluble resin comprising a hydroxystyrene constituent unit (a1) and a styrene constituent unit (a2), (B) a crosslinking agent, (C) a photo acid generator, and an organic solvent is prepared and a resist pattern is formed by using the same.Type: GrantFiled: May 20, 2004Date of Patent: February 12, 2008Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Yusuke Nakagawa, Shinichi Hidesaka, Kenji Maruyama, Satoshi Shimatani, Masahiro Masujima, Kazuyuki Nitta
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Publication number: 20070117045Abstract: The present invention provides a chemical amplification type positive photoresist composition which is excellent in storage stability as a resist solution in a bottle A novolak resin or a hydroxystyrenic resin is reacted with a crosslinking agent to give a slightly alkali-soluble or alkali-insoluble resin having such a property that solubility in an aqueous alkali solution is enhanced in the presence of an acid, which is then dissolved in an organic solvent, together with (B) a compound generating an acid under irradiation with radiation to obtain a chemical amplification type positive photoresist composition wherein the content of an acid component is 10 ppm or less.Type: ApplicationFiled: January 12, 2007Publication date: May 24, 2007Applicant: Tokyo Ohka Kogyo Co., Ltd.Inventors: Kenji Maruyama, Masaki Kurihara, Ken Miyagi, Satoshi Niikura, Satoshi Shimatani, Masahiro Masujima, Kazuyuki Nitta, Toshihiro Yamaguchi, Kousuke Doi
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Patent number: 7192687Abstract: A positive resist composition capable of realizing an improvement in resolution, a reduction in LER, and a reduction in the level of defects, as well as a method of forming a resist pattern. This composition and method provide: a positive resist composition comprising a resin component (A) containing a structural unit (a1) derived from an (?-methyl)hydroxystyrene, represented by a general formula (1) shown below, and a structural unit (a2) represented by a general formula (2) shown below, wherein the solubility rate of the component (A) in a 2.38% by weight aqueous solution of TMAH (tetramethylammonium hydroxide) is within a range from 100 to 1000 ?/second, as well as a method of forming a resist pattern that uses such a composition; (wherein in the general formulas (1) and (2), R represents a hydrogen atom or a methyl group).Type: GrantFiled: September 1, 2004Date of Patent: March 20, 2007Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Kazuyuki Nitta, Waki Ohkubo, Satoshi Shimatani
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Patent number: 7150956Abstract: The present invention provides a resist composition comprising (A) polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with an acid-dissociable dissolution inhibiting group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the acid-dissociable dissolution inhibiting group is eliminated by an action of an acid, and (B) a component capable of generating an acid by irradiation with radiation, wherein a retention rate of the acid-dissociable dissolution inhibiting group of the component (A) after a dissociation test using hydrochloric acid is 40% or less, and also provides a chemical amplification type positive resist composition which contains polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with a lower alkoxy-alkyl group having a straight-chain or branched alkoxy group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the lower alkoxy-alkyl groupType: GrantFiled: January 3, 2005Date of Patent: December 19, 2006Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Kazuyuki Nitta, Takeyoshi Mimura, Satoshi Shimatani, Waki Okubo, Tatsuya Matsumi
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Publication number: 20060003260Abstract: To provide a chemical amplification type positive photoresist composition, which has high sensitivity, high heat resistance and high resolution (high contrast) and is capable of suppressing an undulation phenomenon, and a method for formation of a resist pattern, a chemical amplification type positive photoresist composition comprising (A) an alkali soluble resin comprising a hydroxystyrene constituent unit (a1) and a styrene constituent unit (a2), (B) a crosslinking agent, (C) a photo acid generator, and an organic solvent is prepared and a resist pattern is formed by using the same.Type: ApplicationFiled: May 20, 2004Publication date: January 5, 2006Inventors: Yusuke Nakagawa, Shinichi Hidesaka, Kenji Maruyama, Satoshi Shimatani, Masahiro Masujima, Kazuyuki Nitta
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Publication number: 20050244740Abstract: The present invention provides a chemical amplification type positive photoresist composition which is excellent in storage stability as a resist solution in a bottle. A novolak resin or a hydroxystyrenic resin is reacted with a crosslinking agent to give a slightly alkali-soluble or alkali-insoluble resin having such a property that solubility in an aqueous alkali solution is enhanced in the presence of an acid, which is then dissolved in an organic solvent, together with (B) a compound generating an acid under irradiation with radiation to obtain a chemical amplification type positive photoresist composition wherein the content of an acid component is 10 ppm or less.Type: ApplicationFiled: May 19, 2004Publication date: November 3, 2005Inventors: Kenji Maruyama, Masaki Kurihara, Ken Miyagi, Satoshi Niikura, Satoshi Shimatani, Masahiro Masujima, Kazuyuki Nitta, Toshihiro Yamaguchi, Kousuke Doi
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Patent number: 6921621Abstract: The present invention provides a resist composition comprising (A) polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with an acid-dissociable dissolution inhibiting group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the acid-dissociable dissolution inhibiting group is eliminated by an action of an acid, and (B) a component capable of generating an acid by irradiation with radiation, wherein a retention rate of the acid-dissociable dissolution inhibiting group of the component (A) after a dissociation test using hydrochloric acid is 40% or less, and also provides a chemical amplification type positive resist composition which contains polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with a lower alkoxy-alkyl group having a straight-chain or branched alkoxy group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the lower alkoxy-alkyl groupType: GrantFiled: June 28, 2002Date of Patent: July 26, 2005Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Kazuyuki Nitta, Takeyoshi Mimura, Satoshi Shimatani, Waki Okubo, Tatsuya Matsumi
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Publication number: 20050112498Abstract: The present invention provides a resist composition comprising (A) polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with an acid-dissociable dissolution inhibiting group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the acid-dissociable dissolution inhibiting group is eliminated by an action of an acid, and (B) a component capable of generating an acid by irradiation with radiation, wherein a retention rate of the acid-dissociable dissolution inhibiting group of the component (A) after a dissociation test using hydrochloric acid is 40% or less, and also provides a chemical amplification type positive resist composition which contains polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with a lower alkoxy-alkyl group having a straight-chain or branched alkoxy group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the lower alkoxy-alkyl groupType: ApplicationFiled: January 3, 2005Publication date: May 26, 2005Inventors: Kazuyuki Nitta, Takeyoshi Mimura, Satoshi Shimatani, Waki Okubo, Tatsuya Matsumi
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Publication number: 20050079445Abstract: A positive resist composition capable of realizing an improvement in resolution, a reduction in LER, and a reduction in the level of defects, as well as a method of forming a resist pattern. This composition and method provide: a positive resist composition comprising a resin component (A) containing a structural unit (a1) derived from an (?-methyl)hydroxystyrene, represented by a general formula (1) shown below, and a structural unit (a2) represented by a general formula (2) shown below, wherein the solubility rate of the component (A) in a 2.38% by weight aqueous solution of TMAH (tetramethylammonium hydroxide) is within a range from 100 to 1000 ?/second, as well as a method of forming a resist pattern that uses such a composition.Type: ApplicationFiled: September 1, 2004Publication date: April 14, 2005Inventors: Kazuyuki Nitta, Waki Ohkubo, Satoshi Shimatani
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Publication number: 20050037291Abstract: The object is to form a resist pattern to be applicable to a thermal flow process with a small changing amount of the resist pattern size per unit temperature, high uniformity within the plane of the resist hole pattern size obtained and an excellent cross sectional profile.Type: ApplicationFiled: December 2, 2002Publication date: February 17, 2005Inventors: Kazuyuki Nitta, Satoshi Shimatani, Masahiro Masujima