Abstract: The object is to form a resist pattern to be applicable to a thermal flow process with a small changing amount of the resist pattern size per unit temperature, high uniformity within the plane of the resist hole pattern size obtained and an excellent cross sectional profile.

Abstract: The invention discloses a crosslinked chemical-amplification positive-working photoresist composition of good pattern resolution and storage stability, which is suitable for pattern size diminution by the thermal flow process after development. The composition comprises: (A) a polyhydroxystyrene resin substituted for a part of the hydroxyl hydrogen atoms by acid-dissociable solubility-reducing groups; (B) a radiation-sensitive acid-generating compound; (C) a polyvinyl ether compound as a crosslinking agent; (D) a carboxylic acid; and (E) an amine compound.

Abstract: The present invention provides a resist composition comprising (A) polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with an acid-dissociable dissolution inhibiting group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the acid-dissociable dissolution inhibiting group is eliminated by an action of an acid, and (B) a component capable of generating an acid by irradiation with radiation, wherein a retention rate of the acid-dissociable dissolution inhibiting group of the component (A) after a dissociation test using hydrochloric acid is 40% or less, and also provides a chemical amplification type positive resist composition which contains polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with a lower alkoxy-alkyl group having a straight-chain or branched alkoxy group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the lower alkoxy-alkyl group

Abstract: The present invention provides a positive photoresist composition including (A) an alkali-soluble resin and (B) a photosensitizer, and the ingredient (B) is a quinonediazide ester of, for example, 2,6-bis[4-hydroxy-3-(2-hydroxy-3,5-dimethylbenzyl)-2,5-dimethylbenzyl]-4-methylphenol, where the average degree of esterification of 20% to 80%.

Abstract: The present invention provides a positive photoresist composition including (A) an alkali-soluble resin and (B) a photosensitizer, and the ingredient (B) is a quinonediazide ester of, for example, 2,6-bis[4-hydroxy-3-(2-hydroxy-3,5-dimethylbenzyl)-2,5-dimethylbenzyl]-4-methylphenol, where the average degree of esterification of 20% to 80%.

Abstract: The present invention provides a positive photoresist composition including (A) an alkali-soluble resin and (B) a photosensitizer, and the ingredient (B) is a quinonediazide ester of, for example, 2,6-bis[4-hydroxy-3-(2-hydroxy-3,5-dimethylbenzyl)-2,5-dimethylbenzyl]-4-methylphenol, where the average degree of esterification of 20% to 80%.

Abstract: The invention discloses a photolithographic patterning method of a photoresist layer for the formation of a patterned resist layer on a substrate surface having a fine hole pattern. The inventive method comprises the steps of forming a patterned resist layer by using a specific chemical-amplification positive-working photoresist composition compounded with a di- or polyvinyloxy compound such as cyclohexanedimethonol divinyl ether as a crosslinking agent of the resinous ingredient and subjecting the patterned resist layer on the substrate to a heat treatment for the so-called thermal flow treatment to effect pattern size reduction of the resist pattern.

Abstract: The invention discloses a crosslinked chemical-amplification positive-working photoresist composition of good pattern resolution and storage stability, which is suitable for pattern size diminution by the thermal flow process after development. The composition comprises: (A) a polyhydroxystyrene resin substituted for a part of the hydroxyl hydrogen atoms by acid-dissociable solubility-reducing groups; (B) a radiation-sensitive acid-generating compound; (C) a polyvinyl ether compound as a crosslinking agent; (D) a carboxylic acid; and (E) an amine compound.