Abstract: Provided is a honeycomb fired body in which the pressure loss in the initial state where PM has not accumulated is sufficiently low, the strength is sufficiently high, and the heat capacity is not small.

Abstract: Provided are a transistor which has electrical characteristics requisite for its purpose and uses an oxide semiconductor layer and a semiconductor device including the transistor. In the bottom-gate transistor in which at least a gate electrode layer, a gate insulating film, and the semiconductor layer are stacked in this order, an oxide semiconductor stacked layer including at least two oxide semiconductor layers whose energy gaps are different from each other is used as the semiconductor layer. Oxygen and/or a dopant may be added to the oxide semiconductor stacked layer.

Abstract: Provided are a transistor which has electrical characteristics requisite for its purpose and uses an oxide semiconductor layer and a semiconductor device including the transistor. In the bottom-gate transistor in which at least a gate electrode layer, a gate insulating film, and the semiconductor layer are stacked in this order, an oxide semiconductor stacked layer including at least two oxide semiconductor layers whose energy gaps are different from each other is used as the semiconductor layer. Oxygen and/or a dopant may be added to the oxide semiconductor stacked layer.

Abstract: This invention is intended to produce a novel functional material through solubilization and molecular weight reduction of a water-insoluble polymeric compound, such as a water-insoluble protein or water-insoluble polysaccharide, in a simple and efficient manner.

Abstract: Provided is a bottom-gate transistor including an oxide semiconductor, in which electric-field concentration which might occur in the vicinity of an end portion of a drain electrode layer (and the vicinity of an end portion of a source electrode layer) when a high gate voltage is applied to a gate electrode layer is reduced and degradation of switching characteristics is suppressed, so that the reliability is improved. The cross-sectional shape of an insulating layer which overlaps over a channel formation region is a tapered shape. The thickness of the insulating layer which overlaps over the channel formation region is 0.3 ?m or less, preferably 5 nm or more and 0.1 ?m or less. The taper angle ? of a lower end portion of the cross-sectional shape of the insulating layer which overlaps over the channel formation region is 60° or smaller, preferably 45° or smaller, further preferably 30° or smaller.

Abstract: A fluid treatment apparatus includes a reactor that decomposes an organic matter contained in a mixed fluid of a fluid to be treated and an oxidizing agent, an oxidizing agent injector that includes an injection port to inject the oxidizing agent into the reactor, a fluid discharger that is disposed to surround the oxidizing agent injector and includes an outlet to discharge the fluid in the reactor, and a pressurizer that pressurizes the oxidizing agent. The fluid discharger has a fluid passage a diameter of which is larger than a maximum particle diameter of a solid material contained in the fluid and a shape of which does not create a pressure difference in the fluid passage, the outlet of the fluid discharger being provided to discharge the fluid toward the oxidizing agent injector. The apparatus atomizes the fluid by pressure energy of the injected oxidizing agent.

Abstract: Provided is a bottom-gate transistor including an oxide semiconductor, in which electric-field concentration which might occur in the vicinity of an end portion of a drain electrode layer (and the vicinity of an end portion of a source electrode layer) when a high gate voltage is applied to a gate electrode layer is reduced and degradation of switching characteristics is suppressed, so that the reliability is improved. The cross-sectional shape of an insulating layer which overlaps over a channel formation region is a tapered shape. The thickness of the insulating layer which overlaps over the channel formation region is 0.3 ?m or less, preferably 5 nm or more and 0.1 ?m or less. The taper angle ? of a lower end portion of the cross-sectional shape of the insulating layer which overlaps over the channel formation region is 60° or smaller, preferably 45° or smaller, further preferably 30° or smaller.

Abstract: A semiconductor device in which deterioration of electrical characteristics which becomes more noticeable as the transistor is miniaturized can be suppressed is provided. The semiconductor device includes an oxide semiconductor stack in which a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer are stacked in this order from the substrate side over a substrate; a source electrode layer and a drain electrode layer which are in contact with the oxide semiconductor stack; a gate insulating film over the oxide semiconductor stack, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating film. The first oxide semiconductor layer includes a first region. The gate insulating film includes a second region. When the thickness of the first region is TS1 and the thickness of the second region is TG1, TS1?TG1.

Abstract: A heat exchange device that is coupled to an electronic device that includes an electronic component that generates heat, the heat exchange device includes: a first-channel through which a first-coolant that cools the electronic component flows; a heat-exchange-unit that performs heat exchange between the first-coolant and a second-coolant; a second-channel through which the second-coolant-flows; a first-coolant-detection-unit that detects leakage of the first-coolant from the first-channel; a collection-unit that collects the first-coolant that is leaked from the first-channel; a storage-unit that is provided in the first-channel and supplies the stored first-coolant to the first channel; a recovery-unit that is provided between the collection-unit and the storage-unit; and a control-unit that causes the recovery-unit to recover the first-coolant that is collected by the collection unit, into the storage-unit when the first-coolant-detection-unit detects leakage of the first-coolant.

Abstract: A semiconductor device is provided, which includes a single crystal semiconductor layer formed over an insulating surface and having a source region, a drain region, and a channel formation region, a gate insulating film covering the single crystal semiconductor layer and a gate electrode overlapping with the channel formation region with the gate insulating film interposed therebetween. In the semiconductor device, at least the drain region of the source and drain regions includes a first impurity region adjacent to the channel formation region and a second impurity region adjacent to the first impurity region. A maximum of an impurity concentration distribution in the first impurity region in a depth direction is closer to the insulating surface than a maximum of an impurity concentration distribution in the second impurity region in a depth direction.

Abstract: Provided are a transistor which has electrical characteristics requisite for its purpose and uses an oxide semiconductor layer and a semiconductor device including the transistor. In the bottom-gate transistor in which at least a gate electrode layer, a gate insulating film, and the semiconductor layer are stacked in this order, an oxide semiconductor stacked layer including at least two oxide semiconductor layers whose energy gaps are different from each other is used as the semiconductor layer. Oxygen and/or a dopant may be added to the oxide semiconductor stacked layer.

Abstract: A semiconductor device in which deterioration of electrical characteristics which becomes more noticeable as the transistor is miniaturized can be suppressed is provided. The semiconductor device includes an oxide semiconductor stack in which a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer are stacked in this order from the substrate side over a substrate; a source electrode layer and a drain electrode layer which are in contact with the oxide semiconductor stack; a gate insulating film over the oxide semiconductor stack, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating film. The first oxide semiconductor layer includes a first region. The gate insulating film includes a second region. When the thickness of the first region is TS1 and the thickness of the second region is TG1, TS1?TG1.

Abstract: Provided are a transistor which has electrical characteristics requisite for its purpose and uses an oxide semiconductor layer and a semiconductor device including the transistor. In the bottom-gate transistor in which at least a gate electrode layer, a gate insulating film, and the semiconductor layer are stacked in this order, an oxide semiconductor stacked layer including at least two oxide semiconductor layers whose energy gaps are different from each other is used as the semiconductor layer. Oxygen and/or a dopant may be added to the oxide semiconductor stacked layer.

Abstract: There is provided an imaging device including an imaging element that acquires a captured image of a subject, a light emission unit that emits light to the subject, and a control unit that is capable of controlling a timing of exposure performed by the imaging element and a timing of light emission performed by the light emission unit. In a mode in which imaging is performed with a plurality of times of consecutive light emission by the light emission unit, the control unit controls at least one of a timing of the exposure and a timing of the light emission so that light amounts effective for exposure in each imaging are substantially the same.

Abstract: Provided is a bottom-gate transistor including an oxide semiconductor, in which electric-field concentration which might occur in the vicinity of an end portion of a drain electrode layer (and the vicinity of an end portion of a source electrode layer) when a high gate voltage is applied to a gate electrode layer is reduced and degradation of switching characteristics is suppressed, so that the reliability is improved. The cross-sectional shape of an insulating layer which overlaps over a channel formation region is a tapered shape. The thickness of the insulating layer which overlaps over the channel formation region is 0.3 ?m or less, preferably 5 nm or more and 0.1 ?m or less. The taper angle ? of a lower end portion of the cross-sectional shape of the insulating layer which overlaps over the channel formation region is 60° or smaller, preferably 45° or smaller, further preferably 30° or smaller.

Abstract: Provided is a bottom-gate transistor including an oxide semiconductor, in which electric-field concentration which might occur in the vicinity of an end portion of a drain electrode layer (and the vicinity of an end portion of a source electrode layer) when a high gate voltage is applied to a gate electrode layer is reduced and degradation of switching characteristics is suppressed, so that the reliability is improved. The cross-sectional shape of an insulating layer which overlaps over a channel formation region is a tapered shape. The thickness of the insulating layer which overlaps over the channel formation region is 0.3 ?m or less, preferably 5 nm or more and 0.1 ?m or less. The taper angle ? of a lower end portion of the cross-sectional shape of the insulating layer which overlaps over the channel formation region is 60° or smaller, preferably 45° or smaller, further preferably 30° or smaller.

Abstract: A heat exchange device that is coupled to an electronic device that includes an electronic component that generates heat, the heat exchange device includes: a first-channel through which a first-coolant that cools the electronic component flows; a heat-exchange-unit that performs heat exchange between the first-coolant and a second-coolant; a second-channel through which the second-coolant-flows; a first-coolant-detection-unit that detects leakage of the first-coolant from the first-channel; a collection-unit that collects the first-coolant that is leaked from the first-channel; a storage-unit that is provided in the first-channel and supplies the stored first-coolant to the first channel; a recovery-unit that is provided between the collection-unit and the storage-unit; and a control-unit that causes the recovery-unit to recover the first-coolant that is collected by the collection unit, into the storage-unit when the first-coolant-detection-unit detects leakage of the first-coolant.

Abstract: Provided are a transistor which has electrical characteristics requisite for its purpose and uses an oxide semiconductor layer and a semiconductor device including the transistor. In the bottom-gate transistor in which at least a gate electrode layer, a gate insulating film, and the semiconductor layer are stacked in this order, an oxide semiconductor stacked layer including at least two oxide semiconductor layers whose energy gaps are different from each other is used as the semiconductor layer. Oxygen and/or a dopant may be added to the oxide semiconductor stacked layer.

Abstract: Provided is a semiconductor device having a structure which can suppress a decrease in electrical characteristics, which becomes more significant with miniaturization. The semiconductor device includes a plurality of gate electrode layers separated from each other. One of the plurality of gate electrode layers includes a region which overlaps with a part of an oxide semiconductor layer, a part of a source electrode layer, and a part of a drain electrode layer. Another of the plurality of gate electrode layers overlaps with a part of an end portion of the oxide semiconductor layer. The length in the channel width direction of each of the source electrode layer and the drain electrode layer is shorter than that of the one of the plurality of gate electrode layers.

Abstract: Provided are a transistor which has electrical characteristics requisite for its purpose and uses an oxide semiconductor layer and a semiconductor device including the transistor. In the bottom-gate transistor in which at least a gate electrode layer, a gate insulating film, and the semiconductor layer are stacked in this order, an oxide semiconductor stacked layer including at least two oxide semiconductor layers whose energy gaps are different from each other is used as the semiconductor layer. Oxygen and/or a dopant may be added to the oxide semiconductor stacked layer.