Abstract: Provided is a substrate treating composition. The substrate treating composition includes a first monomer, a second monomer and an acid. The first monomer is represented by Formula 1 and the second monomer is represented by Formula 7. The molecular weight of the solid content of the substrate treating composition including the first monomer, the second monomer and the acid is from about 1,000 g/mol to about 50,000 g/mol.

Abstract: A sensor module includes: a base member; at least one of a single or a plurality of sensors and vibrators arranged on the base member; and a protective member constituted of at least one flat surface or a curved surface, provided so as to cover the at least one of the sensors and the vibrators. A part or whole of the protective member is formed of a strengthened glass and the strengthened glass is a chemically strengthened glass or a physically strengthened glass.

Abstract: Provided is a substrate treating composition. The substrate treating composition includes a first monomer, a second monomer and an acid. The first monomer is represented by Formula 1 and the second monomer is represented by Formula 7. The molecular weight of the solid content of the substrate treating composition including the first monomer, the second monomer and the acid is from about 1,000 g/mol to about 50,000 g/mol.

Abstract: A film-forming composition suitable as a resist underlayer film-forming composition from which a resist underlayer film having not only a good EUV resist adhesivity but also a good etching processability due to a high fluorine-based etching rate. For example, a film-forming composition includes a polymer represented by Formula (E1) and a solvent.

Abstract: A sensor module includes: a base member; at least one of a single or a plurality of sensors and vibrators arranged on the base member; and a protective member constituted of at least one flat surface or a curved surface, provided so as to cover the at least one of the sensors and the vibrators. A part or whole of the protective member is formed of a strengthened glass and the strengthened glass is a chemically strengthened glass or a physically strengthened glass.

Abstract: The present invention provides a resist underlayer film-forming composition for lithography for forming a resist underlayer film that can be used as a hard mask with use of hydrolysis-condensation product of a hydrolyzable silane which also absorbs KrF laser. A resist underlayer film-forming composition for lithography comprising, as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1): R1aR2bSi(R3)4?(a+b)??Formula (1) [where R1 is an organic group of Formula (2): and is bonded to a silicon atom through a Si—C bond; R3 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3], and a ratio of sulfur atoms to silicon atoms is 7% by mole or more in the whole of the silane.

Abstract: The present invention provides a substrate stage and a substrate processing apparatus that appropriately control a temperature of a staging surface on which a substrate is placed. The substrate stage includes a stage base including a cooling surface therein, and a supply flow path forming member formed of a material having a lower thermal conductivity than that of the stage base and including cooling nozzles configured to spray a coolant toward the cooling surface.

Abstract: A substrate processing device is provided. The substrate processing device includes a processing container including a mounting table, a refrigeration device disposed to have a gap between the mounting table and the refrigeration device, a first elevating device configured to raise or lower the refrigeration device, a refrigerant flow path to supply a refrigerant to the gap, a compression device configured to compress the refrigerant supplied to the refrigerant flow path, and refrigerant transfer pipes connected to both a first connection-fixing unit which is a flow path port of the refrigerant flow path and a second connection-fixing unit fluid-communicating with the compression device. Further, each of the refrigeration transfer pipes extends such that at least a portion of the refrigerant transfer pipe is curved between the first and second connection-fixing units, and each of the refrigerant transfer pipes is placed on a support member at the second connection-fixing unit.

Abstract: A stage device includes a stage having a copper main body and an electrostatic chuck, a cooling unit disposed below the stage, and a power supply mechanism for supplying power to an attraction electrode of the electrostatic chuck from a DC power supply disposed below the stage. The power supply mechanism includes a pair of terminals disposed at an outer peripheral portion of the stage while being spaced apart from each other, a first power supply line having a pair of metal rods spaced apart from each other while extending toward the stage and being connected to the DC power supply, a second power supply line having a pair of metal rods spaced apart from each other and connected to the terminals, and a connecting unit where the metal rods of the first power supply line and the metal rods of the second power supply line are connected.

Abstract: A resist underlayer film allows an excellent resist pattern shape to be formed when an upper resist layer is exposed to light and developed using an alkaline developing solution or organic solvent; and composition for forming the resist underlayer film. A resist underlayer film-forming composition for lithography, the composition including, as a silane, hydrolyzable silane, hydrolysis product thereof, hydrolysis-condensation product thereof, or combination, wherein the hydrolyzable silane includes hydrolyzable silane of Formula (1): R1aR2bSi(R3)4?(a+b)??Formula (1) [where R1 is an organic group of Formula (2): —R4—R5—R6??Formula (2) (where R4 is optionally substituted C1-10 alkylene group; R5 is a sulfonyl group or sulfonamide group; and R6 is a halogen-containing organic group)]. In Formula (2), R6 may be a fluorine-containing organic group like trifluoromethyl group.

Abstract: Provided are: a primer for a semiconductor substrate that is a novel surface modifier for a resist pattern having a high adhesiveness to a resist film and enabling the formation of an excellent resist pattern with a thin film thickness; a laminated substrate wherein a surface modifier and a resist pattern are successively laminated on a substrate; a pattern formation method; and a method for manufacturing a semiconductor device. The surface modifier for a resist pattern, which is to be applied to a substrate prior to the formation of a resist pattern with a thickness of 0.10 um or less on the substrate to thereby enhance the adhesion between the substrate and the resist pattern, is characterized by comprising at least one member selected from among a compound represented by average compositional formula (1), a hydrolysate thereof and a hydrolytic condensate thereof. R1aR2b(OX)cSiO(4-a-b-c)/2 (1) [wherein: R1 represents a —(CH2)n group; Y represents a cyclohexenyl group, etc.

Abstract: A resist underlayer film-forming composition for lithography can produce a semiconductor device; specifically, for forming a resist underlayer film that can be used as a hard mask. It includes a hydrolysis condensate (c) of a hydrolyzable silane (a) as a silane, nitric acid ions, and a solvent, wherein the hydrolyzable silane (a) contains a hydrolyzable silane of the following Formula (1): R1aR2bSi(R3)4-(a+b)??Formula (1) [wherein R1 is an organic group of the following Formula (2): and is bonded to a silicon atom via an Si—C bond]. The composition may further include the hydrolyzable silane (a) and/or a hydrolysate (b) thereof. The amount of the nitric acid ions may fall within a range of 1 ppm to 1,000 ppm. In the hydrolysis condensate (c), the functional group of Formula (2) in the hydrolyzable silane of Formula (1) may satisfy a (hydrogen atom)/(hydrogen atom+R5 group) ratio by mole of 1% to 100%.

Abstract: An acoustic air flow resistive article and a method of making same. The acoustic air flow resistive article can include melt blown fibers having a fiber diameter of no greater than 10 ?m and binder fibers dispersed amongst the melt blown fibers and at least partially melt-adhered to the melt blown fibers. The melt blown fibers can be formed of a resin having a first melting point, and the surface of the binder fibers can be at least partially formed of a resin having a second melting point that is less than the first melting point. The method can include mixing the melt blown fibers and the binder fibers to form a web, and pressing the web at a temperature that is less than the first melting point and greater than the second melting point.

Abstract: A sensor module includes: a base member; at least one of a single or a plurality of sensors and vibrators arranged on the base member; and a protective member constituted of at least one flat surface or a curved surface, provided so as to cover the at least one of the sensors and the vibrators. A part or whole of the protective member is formed of a strengthened glass and the strengthened glass is a chemically strengthened glass or a physically strengthened glass.

Abstract: A game device includes a board surface configured to allow articles of a first type and a second type to be placed, and for the articles of the first type and the second type placed on the board surface, acquires first game information associated with the article of the first type or second game information associated with the article of the second type. The device executes a game based on the acquired first game information, and changes a state of acquisition of information from an article on the board surface to one of a first state and a second state according to the progress of the game, the first state in which the first game information is acquired from the article of the first type, the second state in which the second game information is acquired from the article of the second type.

Abstract: A composition for forming a resist underlayer film that mask residues after lithography can be removed only with a chemical without etching. A composition for forming a silicon-containing resist underlayer film, that includes a polysiloxane having a unit structure including a carbonyl group-containing functional group, wherein the silicon-containing resist underlayer film is used as a mask layer in a step of removing the mask layer with a hydrogen peroxide-containing chemical after transfer of a pattern to an underlayer by a lithography process. The composition for forming a silicon-containing resist underlayer film, wherein the unit structure including a carbonyl group-containing functional group may include a cyclic acid anhydride group, a cyclic diester group, or a diester group. The polysiloxane may further have a unit structure including an amide group-containing organic group. The amide group may be a sulfonamide group or a diallyl isocyanurate group.

Abstract: The present invention provides a resist underlayer film-forming composition for lithography for forming a resist underlayer film that can be used as a hard mask with use of hydrolysis-condensation product of a hydrolyzable silane which also absorbs KrF laser. A resist underlayer film-forming composition for lithography comprising, as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1): R1aR2bSi(R3)4?(a+b)??Formula (1) [where R1 is an organic group of Formula (2): and is bonded to a silicon atom through a Si—C bond; R3 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3], and a ratio of sulfur atoms to silicon atoms is 7% by mole or more in the whole of the silane.

Abstract: Provided is a substrate treating composition. The substrate treating composition includes a first monomer, a second monomer and an acid. The first monomer is represented by Formula 1 and the second monomer is represented by Formula 7. The molecular weight of the solid content of the substrate treating composition including the first monomer, the second monomer and the acid is from about 1,000 g/mol to about 50,000 g/mol.

Abstract: Method for producing coating composition applied to patterned resist film in lithography process for solvent development to reverse pattern. The method including: step obtaining hydrolysis condensation product by hydrolyzing and condensing hydrolyzable silane in non-alcoholic hydrophilic solvent; step of solvent replacement wherein non-alcoholic hydrophilic solvent replaced with hydrophobic solvent for hydrolysis condensation product. Method for producing semiconductor device, including: step of applying resist composition to substrate and forming resist film; step of exposing and developing formed resist film; step applying composition obtained by above production method to patterned resist film obtained during or after development in step, forming coating film between patterns; step of removing patterned resist film by etching and reversing patterns. Production method that exposure is performed using ArF laser (with wavelength of 193 nm) or EUV (with wavelength of 13.5 nm).

Abstract: A resist underlayer film forming composition for lithography for a resist underlayer film usable as a hardmask. A resist underlayer film forming composition for lithography, including: as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1) or a hydrolyzable silane containing a combination of a hydrolyzable silane of Formula (1) with a hydrolyzable silane of Formula (2), and a content of the hydrolyzable silane of Formula (1) or the hydrolyzable silane containing a combination of a hydrolyzable silane of Formula (1) with a hydrolyzable silane of Formula (2) in all silanes is less than 50% by mole, R1aR2bSi(R3)4?(a+b)??Formula (1) R4a1R5b1Si(R6)4?(a1+b1)??Formula (2).