Abstract: Provided is a method of recovering rare-earth elements by which rare-earth elements can be recovered efficiently from a bauxite residue serving as a raw material and containing the rare-earth elements. Specifically provided is a method of recovering rare-earth elements from a raw material, the raw material being a bauxite residue produced as a by-product in a Bayer process, the method including: using a bauxite residue having a specific surface area of 35 m2/g or more; adding, to the raw material bauxite residue, a liquid leaching agent formed of an aqueous solution of at least one kind of mineral acid selected from sulfuric acid, hydrochloric acid, nitric acid, and sulfurous acid, thereby preparing a slurry having a liquid-solid ratio of 2 to 30 and a pH of 0.5 to 2.2; subjecting the slurry to leaching treatment of the rare-earth elements under a temperature condition of room temperature to 160° C.

Abstract: A package substrate includes a recessed part and a step part disposed at a periphery thereof, and a lid body is bonded to the step part to cover the recessed part via a bonding layer containing a glass and an electromagnetic wave absorbent material. A ratio (w1/h1) of a width (w1) to a height (h1) of the step part of the package substrate is 1.0 or more.

Abstract: Described herein are compositions for forming an underlayer film for a solvent-developable resist. These compositions can include a hydrolyzable organosilane having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof and a solvent. The composition can form a resist underlayer film including, a hydrolyzable organosilane, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof, the silicon atom in the silane compound having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group in a ratio of 0.1 to 40% by mol based on the total amount of silicon atoms. Also described is a method for applying the composition onto a semiconductor substrate and baking the composition to form a resist underlayer film.

Abstract: A resist underlayer film forming composition for lithography for a resist underlayer film usable as a hardmask.

Abstract: A sealing material containing 30 to 99 mass % of a glass powder and 1 to 70 mass % of a conductive metal oxide powder.

Abstract: A transparent member includes a plate having a first surface, and a second surface provided on an opposite side from the first surface. The first surface includes one or a plurality of troughs formed on the first surface, and the first surface contains fluorine atoms.

Abstract: A resist underlayer film composition for lithography, including: a silane: at least one among a hydrolyzable organosilane, a hydrolysis product thereof, and a hydrolysis-condensation product thereof, wherein the silane includes a silane having a cyclic organic group containing as atoms making up the ring, a carbon atom, a nitrogen atom, and a hetero atom other than a carbon and nitrogen atoms. The hydrolyzable organosilane may be a hydrolyzable organosilane of Formula (1), wherein, at least one group among R1, R2, and R3 is a group wherein a —Si(X)3 group bonds to C1-10 alkylene group, and other group(s) among R1, R2, and R3 is(are) a hydrogen atom, C1-10 alkyl group, or C6-40 aryl group; a cyclic organic group of 5-10 membered ring containing atoms making up the ring, a carbon atom, at least one of nitrogen, sulfur or oxygen atoms; and X is an alkoxy group, acyloxy group, or halogen atom.

Abstract: A thin film forming composition for forming resist underlayer film useable in the production of a semiconductor device, and a resist upper layer film absorbs undesirable UV light with a thin film as an upper layer of the EUV resist before undesirable UV light reaches the EUV resist layer in EUV lithography, an underlayer film (hardmask) for an EUV resist, a reverse material, and an underlayer film for a resist for solvent development. The thin film forming composition useable together with a resist in a lithography process, comprising a mixture of titanium compound (A) selected from: R0aTi(R1)(4-a)??Formula (1) a titanium chelate compound, and a hydrolyzable titanium dimer, and a silicon compound (B): R2a?R3bSi(R4)4-(a?+b)??Formula (2) a hydrolysis product, or a hydrolysis-condensation product of the mixture, wherein the number of moles of Ti atom is 50% to 90% relative to the total moles in terms of Ti atom and Si atoms in the composition.

Abstract: A method of manufacturing a semiconductor device by use of an underlayer film material can form a good pattern without deteriorating the resolution limit.

Abstract: Provided is a method of recovering rare-earth elements, including causing rare-earth elements particularly including Nd and Dy to leach efficiently from a raw material for leaching which contains the rare-earth elements, and separating and recovering the rare-earth elements.

Abstract: A resist underlayer film forming composition for lithography, including: as a silane, at least one among a hydrolyzable organosilane, a hydrolysis product thereof, and a hydrolysis-condensation product thereof, wherein the silane includes the silane compound of Formula (1-a) or Formula (1-b): A method for producing a semiconductor device, including: applying the resist underlayer film forming composition onto a semiconductor substrate and baking the composition to form a resist underlayer film; applying a composition for a resist onto the film to form a resist film; exposing the resist film to light; developing the resist film after exposure to obtain a patterned resist film; etching the resist underlayer film according to a pattern of the patterned resist film; and processing the semiconductor substrate according to a pattern of the resist film and the resist underlayer film.

Abstract: Provided is a method of recovering rare-earth elements by which rare-earth elements can be recovered efficiently from a bauxite residue serving as a raw material and containing the rare-earth elements. Specifically provided is a method of recovering rare-earth elements from a raw material, the raw material being a bauxite residue produced as a by-product in a Bayer process, the method including: using a bauxite residue having a specific surface area of 35 m2/g or more; adding, to the raw material bauxite residue, a liquid leaching agent formed of an aqueous solution of at least one kind of mineral acid selected from sulfuric acid, hydrochloric acid, nitric acid, and sulfurous acid, thereby preparing a slurry having a liquid-solid ratio of 2 to 30 and a pH of 0.5 to 2.2; subjecting the slurry to leaching treatment of the rare-earth elements under a temperature condition of room temperature to 160° C.

Abstract: A resist underlayer film for a resist pattern formation by developing a resist with organic solvent after exposure of resist. Method for manufacturing a semiconductor includes: applying onto a substrate a resist underlayer film forming composition including hydrolyzable silanes, hydrolysis products of hydrolyzable silanes, hydrolysis-condensation products of hydrolyzable silanes, or a combination thereof. Hydrolyzable silanes being silane of Formulas (1), (2) and (3).

Abstract: Provided is a method of recovering rare-earth elements, including causing rare-earth elements particularly including Nd and Dy to leach efficiently from a raw material for leaching which contains the rare-earth elements, and separating and recovering the rare-earth elements.

Abstract: A method of manufacturing a member with a sealing material layer has a substrate preparation step, a coating step, a firing step, and a pre-process step. In the substrate preparation step, a substrate having a frame-shaped sealing region is prepared. In the coating step, a sealing material paste is applied on the sealing region of the substrate to form a frame-shaped coating layer. In the firing step, irradiation is performed while firing laser light is scanned along the frame-shaped coating layer, to form a sealing material layer. The pre-process step is performed before the irradiation of the firing step is started. In the pre-process step, irradiation is performed at an irradiation start position for a time within 0.2 D/V to 0.5 D/V [s], where D [mm] and V [mm/s] are a beam diameter and a scanning speed of the firing laser light in the firing step respectively.

Abstract: A thin film forming composition for forming resist underlayer film useable in the production of a semiconductor device, and a resist upper layer film absorbs undesirable UV light with a thin film as an upper layer of the EUV resist before undesirable UV light reaches the EUV resist layer in EUV lithography, an underlayer film (hardmask) for an EUV resist, a reverse material, and an underlayer film for a resist for solvent development. The thin film forming composition useable together with a resist in a lithography process, comprising a mixture of titanium compound (A) selected from: R0aTi(R1)(4?a)??Formula (1) a titanium chelate compound, and a hydrolyzable titanium dimer, and a silicon compound (B): R2a?R3bSi(R4)4?(a?+b)??Formula (2) a hydrolysis product, or a hydrolysis-condensation product of the mixture, wherein the number of moles of Ti atom is 50% to 90% relative to the total moles in terms of Ti atom and Si atoms in the composition.

Abstract: A hollow fiber membrane module, a hollow fiber membrane module unit, and a water treatment method. The module or the module unit enable the efficient contact of microorganisms on the surface of a membrane with a gas. The module and the unit have excellent durability. The hollow fiber membrane module is formed so that the end parts of sheet-form hollow fiber membranes are formed in a substantially rectangular shape and the end face of the anchoring member on a side where the hollow fiber membranes open is formed in a substantially circular shape. The hollow fiber membrane module unit is formed in such a manner that a plurality of modules is disposed. The water treatment method is used to purify treated water with the microorganisms adhered onto the outer surfaces of the hollow fiber membranes by using the module or the unit.

Abstract: An electronic device 1 includes a first glass substrate 2, a second glass substrate 3, and an electronic element part 4 provided between these glass substrates 2, 3. The electronic element part 4 provided between the first and second glass substrates 2, 3 is sealed with a sealing layer 9 made up of a molten fixed layer of a sealing glass material having an electromagnetic wave absorption ability. At least one of the first and second glass substrates 2, 3 is made up of a chemically tempered glass having a surface compressive stress value of 900 MPa or less.

Abstract: Described herein are compositions for forming an underlayer film for a solvent-developable resist. These compositions can include a hydrolyzable organosilane having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof and a solvent. The composition can form a resist underlayer film including, a hydrolyzable organosilane, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof, the silicon atom in the silane compound having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group in a ratio of 0.1 to 40% by mol based on the total amount of silicon atoms. Also described is a method for applying the composition onto a semiconductor substrate and baking the composition to form a resist underlayer film.

Abstract: A hollow fiber membrane module, a hollow fiber membrane module unit using the hollow fiber membrane module, and a water treatment method using the module or the module unit enable the efficient contact of microorganisms on the surface of a membrane with a gas, the module and the unit having excellent durability. The hollow fiber membrane module is formed in such a manner that the end parts of sheet-form hollow fiber membranes are formed in a substantially rectangular shape and the end face of the anchoring member on a side where the hollow fiber membranes open is formed in a substantially circular shape. The hollow fiber membrane module unit is formed in such a manner that a plurality of modules is disposed. The water treatment method is used to purify treated water with the microorganisms adhered onto the outer surfaces of the hollow fiber membranes by using the module or the unit.