Patents by Inventor Satoshi Takei

Satoshi Takei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9946158
    Abstract: Disclosed herein is a composition for forming a resist underlayer film used as an underlayer of a resist for nanoimprint in nanoimprint lithography of a pattern forming process by heat-baking, light-irradiation, or a combination thereof to form the resist underlayer film. The composition includes a silicon atom-containing polymerizable compound (A), a polymerization initiator (B), and a solvent (C). The polymerizable compound (A) may contain silicon atoms in a content of 5 to 45% by mass. The polymerizable compound (A) may be a polymerizable compound having at least one cation polymerizable reactive group, a polymerizable compound having at least one radical polymerizable reactive group, or a combination thereof, and the polymerization initiator (B) may be a photopolymerization initiator.
    Type: Grant
    Filed: December 15, 2014
    Date of Patent: April 17, 2018
    Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Satoshi Takei, Tomoya Ohashi
  • Patent number: 9134610
    Abstract: An underlayer coating is used as an underlayer of photoresists in lithography process of the manufacture of semiconductor devices and has a high dry etching rate in comparison to the photoresists, does not intermix with the photoresists, and is capable of flattening the surface of a semiconductor substrate having holes of a high aspect ratio; and an underlayer coating forming composition can form the underlayer coating. The underlayer coating forming composition for forming by light irradiation an underlayer coating used as an underlayer of a photoresist in a lithography process of the manufacture of semiconductor devices, includes a polymerizable substance and a photopolymerization initiator.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: September 15, 2015
    Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Satoshi Takei, Tetsuya Shinjo, Motohiko Hidaka
  • Publication number: 20150099070
    Abstract: There is provided a composition for curing a resist underlayer film used as an underlayer of a resist for nanoimprint in nanoimprint lithography of a pattern forming process by heat-baking, light-irradiation or both of them to form the resist underlayer film. A composition for forming a resist underlayer film used for nanoimprint in a pattern forming process using nanoimprint by performing heat-baking, light-irradiation, or both of them, the composition comprising a silicon atom-containing polymerizable compound (A), a polymerization initiator (B) and a solvent (C). The polymerizable compound (A) may contain silicon atoms in a content of 5 to 45% by mass. The polymerizable compound (A) may be a polymerizable compound having at least one cation polymerizable reactive group, a polymerizable compound having at least one radical polymerizable reactive group, or a combination of them, and the polymerization initiator (B) may be a photopolymerization initiator.
    Type: Application
    Filed: December 15, 2014
    Publication date: April 9, 2015
    Inventors: Satoshi TAKEI, Tomoya OHASHI
  • Patent number: 8916327
    Abstract: There is provided an underlayer coating forming composition for lithography, and an underlayer coating having a high dry etching rate compared with photoresist, and causing no intermixing with the photoresist, which are used in lithography process of manufacture of semiconductor device. Concretely, it is an underlayer coating forming composition for lithography comprising a dextrin ester compound that at least 50% of hydroxy groups in dextrin is converted into ester groups, a crosslinking compound, and an organic solvent.
    Type: Grant
    Filed: October 29, 2004
    Date of Patent: December 23, 2014
    Assignee: Nissan Chemical Industries, Ltd.
    Inventors: Satoshi Takei, Yasushi Sakaida, Tetsuya Shinjo
  • Patent number: 8481247
    Abstract: To provide a resist underlayer film forming composition for lithography that is used in a lithography process for production of a semiconductor device. There is provided a resist underlayer film forming composition used in a lithography process for production of a semiconductor device, comprising a resin (A), a liquid additive (B) and a solvent (C). The liquid additive (B) may be an aliphatic polyether compound. The liquid additive (B) may be a polyether polyol, polyglycidyl ether or a combination thereof. Further, there is provided a method of manufacturing a semiconductor device, including the steps of forming a resist underlayer film by applying the resist underlayer film forming composition on a semiconductor substrate and by calcining the composition; forming a photoresist layer on the underlayer film; exposing the semiconductor substrate coated with the resist underlayer film and the photoresist layer to light; and developing the photoresist layer after the exposure to light.
    Type: Grant
    Filed: August 20, 2007
    Date of Patent: July 9, 2013
    Assignee: Nissan Chemical Industries, Ltd.
    Inventors: Yusuke Horiguchi, Tetsuya Shinjo, Satoshi Takei
  • Patent number: 8426111
    Abstract: There is provided an underlayer coating that is used as an underlayer of photoresists in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to the photoresists, does not intermix with the photoresists, and is capable of flattening the surface of a semiconductor substrate having holes of a high aspect ratio; and an underlayer coating forming composition for forming the underlayer coating. The underlayer coating forming composition for forming by light irradiation an underlayer coating used as an underlayer of a photoresist in a lithography process of the manufacture of semiconductor devices, comprises a polymerizable substance and a photopolymerization initiator.
    Type: Grant
    Filed: April 11, 2006
    Date of Patent: April 23, 2013
    Assignee: Nissan Chemical Industries, Ltd.
    Inventors: Satoshi Takei, Tetsuya Shinjo, Motohiko Hidaka
  • Patent number: 8283103
    Abstract: There is provided a composition for forming a resist underlayer film that can be homogeneously applied and a sublimate is suppressed during the thermal curing. There is also provided a composition for forming a resist underlayer film having a high selection ratio of dry etching relative to a resist applied thereon. A composition for forming a resist underlayer film for lithography comprising: a polysilane compound having a unit structure of Formula (1): (where R1 and R2 are independently a group of —X—Y (where X is an oxygen atom, a C1-18 alkylene group or a group of —OCnH2n— (where n is an integer of 1 to 18) and Y is a lactone ring or an adamantane ring), or one of R1 and R2 is the group of —X—Y and another thereof is an aryl group, a methyl group, an ethyl group or a C3-6 cycloalkyl group); and an organic solvent.
    Type: Grant
    Filed: August 26, 2008
    Date of Patent: October 9, 2012
    Assignee: Nissan Chemical Industries, Ltd.
    Inventors: Hikaru Imamura, Yasushi Sakaida, Makoto Nakajima, Satoshi Takei
  • Patent number: 8227172
    Abstract: There is provided a resist underlayer film forming composition used in a lithography process for producing semiconductor devices. A method of producing a semiconductor device comprising: forming a coating film by applying a resist underlayer film forming composition containing a polymer, a crosslinker and a photoacid generator on a semiconductor substrate; forming an underlayer film by irradiating light to the coating film; and forming a photoresist by applying a photoresist composition on the underlayer film and heating the resultant layer. The polymer polymer is a polymer having a benzene ring or a hetero ring in a main chain or a side chain bonded to the main chain, and the content rate of a benzene ring in the polymer is 30 to 70% by mass. The polymer may be a polymer containing a lactone structure.
    Type: Grant
    Filed: October 10, 2007
    Date of Patent: July 24, 2012
    Assignee: Nissan Chemical Industries, Ltd.
    Inventors: Yusuke Horiguchi, Satoshi Takei, Tetsuya Shinjo
  • Publication number: 20120128891
    Abstract: There is provided a composition for curing a resist underlayer film used as an underlayer of a resist for nanoimprint in nanoimprint lithography of a pattern forming process by heat-baking, light-irradiation or both of them to form the resist underlayer film. A composition for forming a resist underlayer film used for nanoimprint in a pattern forming process using nanoimprint by performing heat-baking, light-irradiation, or both of them, the composition comprising a silicon atom-containing polymerizable compound (A), a polymerization initiator (B) and a solvent (C). The polymerizable compound (A) may contain silicon atoms in a content of 5 to 45% by mass. The polymerizable compound (A) may be a polymerizable compound having at least one cation polymerizable reactive group, a polymerizable compound having at least one radical polymerizable reactive group, or a combination of them, and the polymerization initiator (B) may be a photopolymerization initiator.
    Type: Application
    Filed: July 26, 2010
    Publication date: May 24, 2012
    Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Satoshi Takei, Tomoya Ohashi
  • Patent number: 8163460
    Abstract: There is provided an underlayer coating for lithography that is used in lithography process of the manufacture of semiconductor devices, that can be used as a hardmask, and that causes no intermixing with photoresists; and a composition for forming the underlayer coating. The composition comprises a polysilane compound, a crosslinkable compound, a crosslinking catalyst and a solvent. The polysilane compound is preferably a polysilane compound having a bond between silicons at the main chain.
    Type: Grant
    Filed: May 12, 2006
    Date of Patent: April 24, 2012
    Assignee: Nissan Chemical Industries, Ltd.
    Inventors: Satoshi Takei, Keisuke Hashimoto, Makoto Nakajima
  • Patent number: 8088546
    Abstract: There is provided an underlayer coating forming composition for lithography, and an underlayer coating having a high dry etching rate compared with photoresist, and causing no intermixing with the photoresist, which are used in lithography process of manufacture of semiconductor device. Concretely, it is an underlayer coating forming composition comprising a polymer having a structural unit containing naphthalene ring substituted with halogen atom in a molar ratio of 0.3 or more in the structural units constituting the polymer, a solvent.
    Type: Grant
    Filed: June 24, 2005
    Date of Patent: January 3, 2012
    Assignee: Nissan Chemical Industries, Ltd.
    Inventors: Satoshi Takei, Takahiro Sakaguchi, Tomoyuki Enomoto
  • Patent number: 8048615
    Abstract: There is provided an underlayer coating that is used as an underlayer of photoresists in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to the photoresists depending on the type of etching gas, does not intermix with the photoresists, and is capable of flattening the surface of a semiconductor substrate having holes of a high aspect ratio; and an underlayer coating forming composition for forming the underlayer coating. The underlayer coating forming composition for forming by light irradiation an underlayer coating used as an underlayer of a photoresist in a lithography process of the manufacture of semiconductor devices, includes a polymerizable compound containing 5 to 45% by mass of silicon atom (A), a photopolymerization initiator (B), and a solvent (C).
    Type: Grant
    Filed: December 1, 2006
    Date of Patent: November 1, 2011
    Assignee: Nissan Chemical Industries, Ltd.
    Inventors: Satoshi Takei, Yusuke Horiguchi, Keisuke Hashimoto, Makoto Nakajima
  • Patent number: 8007979
    Abstract: There is provided a gap fill material forming composition for lithography that is used in dual damascene process and is excellent in flattening property and fill property. Concretely, it is a gap fill material forming composition characterized in that the composition is used in manufacture of semiconductor device by a method comprising coating a photoresist on a semiconductor substrate having a hole with aspect ratio shown in height/diameter of 1 or more, and transferring an image to the semiconductor substrate by use of lithography process, and that comprises a polymer, a crosslinking agent and a solvent.
    Type: Grant
    Filed: February 20, 2004
    Date of Patent: August 30, 2011
    Assignee: Nissan Chemical Industries, Ltd.
    Inventors: Satoshi Takei, Kazuhisa Ishii, Takahiro Kishioka, Yasushi Sakaida
  • Publication number: 20110045404
    Abstract: There is provided a composition for forming a resist underlayer film that can be homogeneously applied and a sublimate is suppressed during the thermal curing. There is also provided a composition for forming a resist underlayer film having a high selection ratio of dry etching relative to a resist applied thereon. A composition for forming a resist underlayer film for lithography comprising: a polysilane compound having a unit structure of Formula (1): (where R1 and R2 are independently a group of —X—Y (where X is an oxygen atom, a C1-18 alkylene group or a group of —OCnH2n— (where n is an integer of 1 to 18) and Y is a lactone ring or an adamantane ring), or one of R1 and R2 is the group of —X—Y and another thereof is an aryl group, a methyl group, an ethyl group or a C3-6 cycloalkyl group); and an organic solvent.
    Type: Application
    Filed: August 26, 2008
    Publication date: February 24, 2011
    Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Hikaru Imamura, Yasushi Sakaida, Makoto Nakajima, Satoshi Takei
  • Patent number: 7842620
    Abstract: There is provided a laminate used as an underlayer layer for a photoresist in a lithography process of a semiconductor device and a method for manufacturing a semiconductor device by using the laminate. The method comprising: laminating each layer of an organic underlayer film (layer A), a silicon-containing hard mask (layer B), an organic antireflective film (layer C) and a photoresist film (layer D) in this order on a semiconductor substrate. The method also comprises: forming a resist pattern in the photoresist film (layer D); etching the organic antireflective film (layer C) with the resist pattern; etching the silicon-containing hard mask (layer B) with the patterned organic antireflective film (layer C); etching the organic underlayer film (layer A) with the patterned silicon-containing hard mask (layer B); and processing the semiconductor substrate with the patterned organic underlayer film (layer A).
    Type: Grant
    Filed: October 12, 2007
    Date of Patent: November 30, 2010
    Assignee: Nissan Chemical Industries, Ltd.
    Inventors: Satoshi Takei, Makoto Nakajima, Yasushi Sakaida, Hikaru Imamura, Keisuke Hashimoto, Takahiro Kishioka
  • Patent number: 7727902
    Abstract: There is provided an underlayer coating that causes no intermixing with photoresist layer, can be formed by a spin-coating method, and can be used as a hard mask in lithography process of manufacture of semiconductor device. Concretely, it is an underlayer coating forming composition used in manufacture of semiconductor device including metal nitride particles having an average particle diameter of 1 to 1000 nm, and an organic solvent. The metal nitride particles contain at least one element selected from the group consisting of titanium, silicon, tantalum, tungsten, cerium, germanium, hafnium, and gallium.
    Type: Grant
    Filed: December 22, 2004
    Date of Patent: June 1, 2010
    Assignee: Nissan Chemical Industries, Ltd.
    Inventors: Satoshi Takei, Yasushi Sakaida
  • Patent number: 7687223
    Abstract: There is provided an underlayer coating forming composition for lithography for forming an underlayer coating having a high dry etching rate compared with photoresist, causing no intermixing with the photoresist, and excellent in property of filling hole on the semiconductor substrate, which is used in lithography process of manufacture of semiconductor device. The composition comprises a cyclodextrin compound that 10% to 90% of total number of hydroxy groups in cyclodextrin is converted into an ether or ester group, a crosslinking compound, a crosslinking catalyst and a solvent.
    Type: Grant
    Filed: October 25, 2005
    Date of Patent: March 30, 2010
    Assignee: Nissan Chemical Industries, Ltd.
    Inventors: Satoshi Takei, Tetsuya Shinjo, Keisuke Hashimoto
  • Publication number: 20100022089
    Abstract: There is provided a laminate used as an underlayer layer for a photoresist in a lithography process of a semiconductor device and a method for manufacturing a semiconductor device by using the laminate. The method comprising: laminating each layer of an organic underlayer film (layer A), a silicon-containing hard mask (layer B), an organic antireflective film (layer C) and a photoresist film (layer D) in this order on a semiconductor substrate. The method also comprises: forming a resist pattern in the photoresist film (layer D); etching the organic antireflective film (layer C) with the resist pattern; etching the silicon-containing hard mask (layer B) with the patterned organic antireflective film (layer C); etching the organic underlayer film (layer A) with the patterned silicon-containing hard mask (layer B); and processing the semiconductor substrate with the patterned organic underlayer film (layer A).
    Type: Application
    Filed: October 12, 2007
    Publication date: January 28, 2010
    Applicant: NISSIAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Satoshi Takei, Makoto Nakajima, Yasushi Sakaida, Hikaru Imamura, Keisuke Hashimoto, Takahiro Kishioka
  • Publication number: 20100022092
    Abstract: There is provided a resist underlayer film forming composition used in a lithography process for producing semiconductor devices. A method of producing a semiconductor device comprising: forming a coating film by applying a resist underlayer film forming composition containing a polymer, a crosslinker and a photoacid generator on a semiconductor substrate; forming an underlayer film by irradiating light to the coating film; and forming a photoresist by applying a photoresist composition on the underlayer film and heating the resultant layer. The polymer polymer is a polymer having a benzene ring or a hetero ring in a main chain or a side chain bonded to the main chain, and the content rate of a benzene ring in the polymer is 30 to 70% by mass. The polymer may be a polymer containing a lactone structure.
    Type: Application
    Filed: October 10, 2007
    Publication date: January 28, 2010
    Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Yusuke Horiguchi, Satoshi Takei, Tetsuya Shinjo
  • Publication number: 20090311624
    Abstract: To provide a resist underlayer film forming composition for lithography that is used in a lithography process for production of a semiconductor device. There is provided a resist underlayer film forming composition used in a lithography process for production of a semiconductor device, comprising a resin (A), a liquid additive (B) and a solvent (C). The liquid additive (B) may be an aliphatic polyether compound. The liquid additive (B) may be a polyether polyol, polyglycidyl ether or a combination thereof. Further, there is provided a method of manufacturing a semiconductor device, including the steps of forming a resist underlayer film by applying the resist underlayer film forming composition on a semiconductor substrate and by calcining the composition; forming a photoresist layer on the underlayer film; exposing the semiconductor substrate coated with the resist underlayer film and the photoresist layer to light; and developing the photoresist layer after the exposure to light.
    Type: Application
    Filed: August 20, 2007
    Publication date: December 17, 2009
    Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Yusuke Horiguchi, Tetsuya Shinjo, Satoshi Takei