Patents by Inventor Satoshi Takei
Satoshi Takei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7687223Abstract: There is provided an underlayer coating forming composition for lithography for forming an underlayer coating having a high dry etching rate compared with photoresist, causing no intermixing with the photoresist, and excellent in property of filling hole on the semiconductor substrate, which is used in lithography process of manufacture of semiconductor device. The composition comprises a cyclodextrin compound that 10% to 90% of total number of hydroxy groups in cyclodextrin is converted into an ether or ester group, a crosslinking compound, a crosslinking catalyst and a solvent.Type: GrantFiled: October 25, 2005Date of Patent: March 30, 2010Assignee: Nissan Chemical Industries, Ltd.Inventors: Satoshi Takei, Tetsuya Shinjo, Keisuke Hashimoto
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Publication number: 20100022092Abstract: There is provided a resist underlayer film forming composition used in a lithography process for producing semiconductor devices. A method of producing a semiconductor device comprising: forming a coating film by applying a resist underlayer film forming composition containing a polymer, a crosslinker and a photoacid generator on a semiconductor substrate; forming an underlayer film by irradiating light to the coating film; and forming a photoresist by applying a photoresist composition on the underlayer film and heating the resultant layer. The polymer polymer is a polymer having a benzene ring or a hetero ring in a main chain or a side chain bonded to the main chain, and the content rate of a benzene ring in the polymer is 30 to 70% by mass. The polymer may be a polymer containing a lactone structure.Type: ApplicationFiled: October 10, 2007Publication date: January 28, 2010Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Yusuke Horiguchi, Satoshi Takei, Tetsuya Shinjo
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Publication number: 20100022089Abstract: There is provided a laminate used as an underlayer layer for a photoresist in a lithography process of a semiconductor device and a method for manufacturing a semiconductor device by using the laminate. The method comprising: laminating each layer of an organic underlayer film (layer A), a silicon-containing hard mask (layer B), an organic antireflective film (layer C) and a photoresist film (layer D) in this order on a semiconductor substrate. The method also comprises: forming a resist pattern in the photoresist film (layer D); etching the organic antireflective film (layer C) with the resist pattern; etching the silicon-containing hard mask (layer B) with the patterned organic antireflective film (layer C); etching the organic underlayer film (layer A) with the patterned silicon-containing hard mask (layer B); and processing the semiconductor substrate with the patterned organic underlayer film (layer A).Type: ApplicationFiled: October 12, 2007Publication date: January 28, 2010Applicant: NISSIAN CHEMICAL INDUSTRIES, LTD.Inventors: Satoshi Takei, Makoto Nakajima, Yasushi Sakaida, Hikaru Imamura, Keisuke Hashimoto, Takahiro Kishioka
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Publication number: 20090311624Abstract: To provide a resist underlayer film forming composition for lithography that is used in a lithography process for production of a semiconductor device. There is provided a resist underlayer film forming composition used in a lithography process for production of a semiconductor device, comprising a resin (A), a liquid additive (B) and a solvent (C). The liquid additive (B) may be an aliphatic polyether compound. The liquid additive (B) may be a polyether polyol, polyglycidyl ether or a combination thereof. Further, there is provided a method of manufacturing a semiconductor device, including the steps of forming a resist underlayer film by applying the resist underlayer film forming composition on a semiconductor substrate and by calcining the composition; forming a photoresist layer on the underlayer film; exposing the semiconductor substrate coated with the resist underlayer film and the photoresist layer to light; and developing the photoresist layer after the exposure to light.Type: ApplicationFiled: August 20, 2007Publication date: December 17, 2009Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Yusuke Horiguchi, Tetsuya Shinjo, Satoshi Takei
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Publication number: 20090162782Abstract: There is provided an underlayer coating that is used as an underlayer of photoresists in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to the photoresists depending on the type of etching gas, does not intermix with the photoresists, and is capable of flattening the surface of a semiconductor substrate having holes of a high aspect ratio; and an underlayer coating forming composition for forming the underlayer coating. The underlayer coating forming composition for forming by light irradiation an underlayer coating used as an underlayer of a photoresist in a lithography process of the manufacture of semiconductor devices, comprises a polymerizable compound containing 5 to 45% by mass of silicon atom (A), a photopolymerization initiator (B), and a solvent (C).Type: ApplicationFiled: December 1, 2006Publication date: June 25, 2009Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Satoshi Takei, Yusuke Horiguchi, Keisuke Hashimoto, Makoto Nakajima
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Publication number: 20090130594Abstract: There is provided an underlayer coating that is used as an underlayer of photoresists in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to the photoresists, does not intermix with the photoresists, and is capable of flattening the surface of a semiconductor substrate having holes of a high aspect ratio; and an underlayer coating forming composition for forming the underlayer coating. The underlayer coating forming composition for forming by light irradiation an underlayer coating used as an underlayer of a photoresist in a lithography process of the manufacture of semiconductor devices, comprises a polymerizable substance and a photopolymerization initiator.Type: ApplicationFiled: April 11, 2006Publication date: May 21, 2009Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Satoshi Takei, Tetsuya Shinjo, Motohiko Hidaka
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Patent number: 7517633Abstract: A composition for forming a gap-filling material for lithography which, as a gap-filling material for lithography superior in planarization ability on a substrate having irregularities such as holes or trenches, causing no intermixing with a resist layer, and having a high dry etching rate as compared with the resist, is used in producing semiconductor devices by a method using the gap-filling material to cover the resist on the substrate having holes having an aspect ratio, defined as height/diameter, of 1 or more to transfer images onto the substrate by utilization of lithographic process, the composition being used to coat the substrate prior to the coating of the resist so as to planarize the substrate surface, and the composition being characterized by containing a polymer solution consisting of a polymer and a solvent.Type: GrantFiled: July 12, 2001Date of Patent: April 14, 2009Assignee: Nissan Chemical Industries, Ltd.Inventors: Satoshi Takei, Ken-ichi Mizusawa, Yasuhisa Sone
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Publication number: 20080318158Abstract: There is provided an underlayer coating for lithography that is used in lithography process of the manufacture of semiconductor devices, that can be used as a hardmask, and that causes no intermixing with photoresists; and a composition for forming the underlayer coating. The composition comprises a polysilane compound, a crosslinkable compound, a crosslinking catalyst and a solvent. The polysilane compound is preferably a polysilane compound having a bond between silicons at the main chain.Type: ApplicationFiled: May 12, 2006Publication date: December 25, 2008Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Satoshi Takei, Keisuke Hashimoto, Makoto Nakajima
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Patent number: 7425347Abstract: The present invention relates to a composition for forming anti-reflective coating for use in a lithography process in manufacture of a semiconductor device which comprises polymer (A) having a weight average molecular weight of 5,000 or less, and a polymer (B) having a weight average molecular weight of 20,000 or more. The composition provides an anti-reflective coating for use in a lithography which is excellent in step coverage on a substrate with an irregular surface, such as hole or trench, has a high anti-reflection effect, causes no intermixing with a resist layer, provides an excellent resist pattern, and has a higher dry etching rate compared with the resist layer.Type: GrantFiled: October 4, 2002Date of Patent: September 16, 2008Assignee: Nissan Chemical Industries, LtdInventors: Satoshi Takei, Yoshiaki Yasumi, Ken-ichi Mizusawa
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Publication number: 20080102649Abstract: There is provided an underlayer coating forming composition for lithography that is used in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to photoresists, does not intermix with photoresists, and is capable of flattening the surface of a semi conductor substrate having holes of a high aspect ratio. The underlayer coating forming composition for lithography comprises, a compound having two or more protected carboxylic groups, a compound having two or more epoxy groups, and a solvent.Type: ApplicationFiled: January 6, 2006Publication date: May 1, 2008Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Satoshi Takei, Tetsuya Shinjo, Keisuke Hashimoto, Yasushi Sakaida
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Patent number: 7365023Abstract: There is provided an underlayer coating causing no intermixing with photoresist layer and having a high dry etching rate compared with photoresist, which is used in lithography process of manufacture of semiconductor device. Concretely, it is an underlayer coating forming composition for forming a porous underlayer coating for use in manufacture of semiconductor device, comprising a blowing agent, an organic material and a solvent, or a polymer having a blowing group and a solvent. The underlayer coating formed from the composition has porous structure which has pores therein, and makes possible to attain a high dry etching rate.Type: GrantFiled: April 16, 2004Date of Patent: April 29, 2008Assignee: Nissan Chemical Industries, Ltd.Inventors: Satoshi Takei, Yasushi Sakaida
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Patent number: 7361718Abstract: There is provided a gap fill material forming composition for lithography that is used in dual damascene process and contributes toward an improvement in production efficiency. Concretely, it is a gap fill material forming composition characterized in that the composition is used in manufacture of semiconductor device by a method comprising coating a photoresist on a substrate having a hole with aspect ratio shown in height/diameter of 1 or more, and transferring an image to the substrate by use of lithography process, and that the composition is coated on the substrate prior to coating of the photoresist, and comprises a polymer having a hydroxy group or a carboxy group and a crosslinking agent. The gap fill material layer obtained from the gap fill material forming composition can be etched back with an alkaline aqueous solution.Type: GrantFiled: December 25, 2003Date of Patent: April 22, 2008Assignee: Nissan Chemical Industries, Ltd.Inventors: Satoshi Takei, Kazuhisa Ishii, Shinya Arase
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Publication number: 20070292767Abstract: There is provided an underlayer coating forming composition for lithography for forming an underlayer coating having a high dry etching rate compared with photoresist, causing no intermixing with the photoresist, and excellent in property of filling hole on the semiconductor substrate, which is used in lithography process of manufacture of semiconductor device. The composition comprises a cyclodextrin compound that 10% to 90% of total number of hydroxy groups in cyclodextrin is converted into an ether or ester group, a crosslinking compound, a crosslinking catalyst and a solvent.Type: ApplicationFiled: October 25, 2005Publication date: December 20, 2007Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Satoshi Takei, Tetsuya Shinjo, Keisuke Hashimoto
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Publication number: 20070238029Abstract: There is provided an underlayer coating forming composition for lithography, and an underlayer coating having a high dry etching rate compared with photoresist, and causing no intermixing with the photoresist, which are used in lithography process of manufacture of semiconductor device. Concretely, it is an underlayer coating forming composition comprising a polymer having a structural unit containing naphthalene ring substituted with halogen atom in a molar ratio of 0.3 or more in the structural units constituting the polymer, a solvent.Type: ApplicationFiled: June 24, 2005Publication date: October 11, 2007Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Satoshi Takei, Takahiro Sakaguchi, Tomoyuki Enomoto
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Publication number: 20070148557Abstract: There is provided an underlayer coating that causes no intermixing with photoresist layer, can be formed by a spin-coating method, and can be used as a hard mask in lithography process of manufacture of semiconductor device. Concretely, it is an underlayer coating forming composition used in manufacture of semiconductor device comprising metal nitride particles having an average particle diameter of 1 to 1000 nm, and an organic solvent. The metal nitride particles contain at least one element selected from the group consisting of titanium, silicon, tantalum, tungsten, cerium, germanium, hafnium, and gallium.Type: ApplicationFiled: December 22, 2004Publication date: June 28, 2007Applicant: NISSAN CHEMICAL INDUSTRIES, LT.Inventors: Satoshi Takei, Yasushi Sakaida
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Publication number: 20070135581Abstract: There is provided an underlayer coating forming composition for lithography, and an underlayer coating having a high dry etching rate compared with photoresist, and causing no intermixing with the photoresist, which are used in lithography process of manufacture of semiconductor device. Concretely, it is an underlayer coating forming composition for lithography comprising a dextrin ester compound that at least 50% of hydroxy groups in dextrin is converted into ester groups, a crosslinking compound, and an organic solvent.Type: ApplicationFiled: October 29, 2004Publication date: June 14, 2007Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Satoshi Takei, Yasushi Sakaida, Tetsuya Shinjo
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Patent number: 7226721Abstract: There is provided an underlayer coating forming composition for lithography, and an underlayer coating having a high dry etching rate compared with photoresist, and causing no intermixing with the photoresist, which are used in lithography process of manufacture of semiconductor device. Concretely, it is an underlayer coating forming composition comprising a compound having a protected carboxyl group, a compound having a group capable of reacting with a carboxyl group and a solvent, and an underlayer coating forming composition comprising a compound having a group capable of reacting with a carboxyl group and a protected carboxyl group and a solvent.Type: GrantFiled: July 30, 2004Date of Patent: June 5, 2007Assignee: Nissan Chemical Industries, Ltd.Inventors: Satoshi Takei, Takahiro Kishioka, Yasushi Sakaida, Tetsuya Shinjo
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Publication number: 20060211256Abstract: There is provided an underlayer coating causing no intermixing with photoresist layer and having a high dry etching rate compared with photoresist, which is used in lithography process of manufacture of semiconductor device. Concretely, it is an underlayer coating forming composition for forming a porous underlayer coating for use in manufacture of semiconductor device, comprising a blowing agent, an organic material and a solvent, or a polymer having a blowing group and a solvent. The underlayer coating formed from the composition has porous structure which has pores therein, and makes possible to attain a high dry etching rate.Type: ApplicationFiled: April 16, 2004Publication date: September 21, 2006Applicant: Nissan Chemical Industries, Ltd.Inventors: Satoshi Takei, Yasushi Sakaida
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Publication number: 20060210915Abstract: There is provided an underlayer coating forming composition for lithography, and an underlayer coating having a high dry-etching rate compared with photoresist, and causing no intermixing with the photoresist, which are used in lithography process of manufacture of semiconductor device. Concretely it is an underlayer coating forming composition comprising a compound having a protected carboxyl group, a compound having a group capable of reacting with a carboxyl group and a solvent, and an underlayer coating forming composition comprising a compound having a group capable of reacting with a carboxyl group and a protected carboxyl group and a solvent.Type: ApplicationFiled: July 30, 2004Publication date: September 21, 2006Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Satoshi Takei, Takahiro Kishioka, Yasushi Sakaida, Tetsuya Shinjo
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Publication number: 20060068526Abstract: There is provided a gap fill material forming composition for lithography that is used in dual damascene process and is excellent in flattening property and fill property. Concretely, it is a gap fill material forming composition characterized in that the composition is used in manufacture of semiconductor device by a method comprising coating a photoresist on a semiconductor substrate having a hole with aspect ratio shown in height/diameter of 1 or more, and transferring an image to the semiconductor substrate by use of lithography process, and that comprises a polymer, a crosslinking agent and a solvent.Type: ApplicationFiled: February 20, 2004Publication date: March 30, 2006Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Satoshi Takei, Kazuhisa Ishii, Takahiro Kishioka, Yasushi Sakaida