Abstract: A vertical cavity surface emitting laser includes: a laminated body; an insulation layer which is provided over at least a portion of the laminated body; an electrode of which at least a portion is provided over the laminated body; a pad; and a wiring which connects the electrode and the pad, wherein the laminated body includes a first mirror layer, an active layer, and a second mirror layer, the laminated body includes a first distortion imparting portion, a second distortion imparting portion, and a resonance portion which is provided between the first distortion imparting portion and the second distortion imparting portion, in a plan view, the electrode is provided so as to cover at least a portion of the resonance portion, in the plan view, a width of the wiring is greater than a width of the first distortion imparting portion and is smaller than a width of the electrode.

Abstract: A vertical cavity surface emitting laser includes: a substrate; a first mirror layer which is provided over the substrate; an active layer which is provided over the first mirror layer; a second mirror layer which is provided over the active layer; a first electrode and a second electrode which are electrically connected to the first mirror layer and are separated from each other; and a third electrode which is electrically connected to the second mirror layer, wherein the first mirror layer, the active layer, and the second mirror layer configure a laminated body, the laminated body includes a resonance portion which resonates light generated in the active layer, in a plan view, an insulation layer surrounding the laminated body is provided, and in the plan view, the insulation layer is provided between the first electrode and the second electrode.

Abstract: A photoconductive antenna includes a semiconductor layer, and first and second electrodes. The semiconductor layer includes a first conductive region and a second conductive region constituting portions of a surface of the semiconductor layer disposed on a side to which the pulsed light is irradiated, and a third conductive region disposed between the first and second conductive regions. The first conductive region contains a first conductive type impurity and the second conductive region contains a second conductive type impurity. The third conductive region has a carrier density lower than a carrier density of the first conductive region or a carrier density of the second conductive region. The first electrode and the second electrode are disposed on the side to which the pulsed light is irradiated. The third conductive region is configured and arranged to be irradiated by the pulsed light.

Abstract: A photoconductive antenna is adapted to generate terahertz waves when irradiated by pulsed light. The photoconductive antenna includes a first conductive region, a second conductive region, and a semiconductor region. The second conductive region is spaced apart from the first conductive region to form a gap therebetween in a top plan view of the photoconductive antenna. The semiconductor region is positioned in the gap between the first conductive region and the second conductive region in the top plan view. An interfacial surface of the semiconductor region positioned in the gap is flush with first interfacial surfaces of the first and second conductive regions. Second interfacial surfaces of the first and second conductive regions positioned on an opposite side from the first interfacial surfaces are positioned on the same side with respect to the interfacial surface of the semiconductor region positioned in the gap.

Abstract: A specimen inspection apparatus includes: a terahertz wave generation unit which generates a terahertz wave; a transportation unit which includes a transportation surface on which specimens as inspection objects are loaded and is configured so as to transport the specimens in an in-plane direction of the transportation surface; an irradiation direction changing unit which changes an irradiation direction of a terahertz wave which is emitted from the terahertz wave generation unit and is emitted to the specimens loaded on the transportation surface; and a terahertz wave detection unit which detects a terahertz wave which is emitted to the specimens loaded on the transportation surface to transmit therethrough or be reflected thereby, wherein the irradiation direction changing unit changes the irradiation direction by changing a position of the terahertz wave generation unit.

Abstract: A photo conductive antenna irradiated with light pulse and generating terahertz wave includes a first layer formed by a semi-insulating substrate, a second layer located on the first layer and formed using a material having lower carrier mobility than carrier mobility of the semi-insulating substrate, a first electrode and a second electrode located on the second layer and applying a voltage to the first layer, a first region in which the second layer is formed on the first layer, and a second region in which the second layer is formed on the first layer, wherein the second region is located between the first electrode and the second electrode in a plan view, and the light pulse is applied to the second region.

Abstract: In a client-server environment in which a plurality of clients are connected on a network, a manager of a company displays an approval request list window (07-01-00) in which a list of purchase-requested articles is displayed, on a client by a predetermined operation, selects a desired article from the articles displayed in the window, and clicks a software button “approval select” or “rejection select” in accordance with approval or rejection of the selected article. At this time, the article for which approval is selected can be formally ordered.

Abstract: A semiconductor device is provided including a transistor having excellent ON current characteristics and OFF leakage current characteristics, an electro-optical device holding an electro-optical material using the semiconductor device, an electronic apparatus using the electro-optical device, and a method for manufacturing the semiconductor device. For a transistor, a source region and a drain region are impurity regions heavily doped by a self-aligned method relative to a gate electrode. Parts of the gate insulating film overlapping with boundary regions of the channel formation region adjacent to the drain region and the source region, are thicker than a part of the gate insulating film overlapping with a center part of the channel formation region, relative to the longitudinal direction of the channel.

Abstract: The invention provides a semi-transparent reflective electro-optic apparatus capable of increasing a quantity of display light in either of the reflection mode and the transparent mode, and electronic equipment including the same. In a TFT array substrate of a reflective electro-optic apparatus, the back surface of a light-reflecting film includes a light-guiding reflection surface that reflects and guides light incident from the back surface side of a light-transmitting substrate to the surface of the light-reflecting film opposing the light-guiding reflection surface with a light-transmitting window in between. Hence, of the light incident from the back surface side of the light-transmitting substrate, light that is shielded in the related art by the light-reflecting film and does not contribute to display in the transparent mode is partly reflected on the light-guiding reflection surface and thereby contributes to display.

Abstract: A high-performance thin-film semiconductor device and a simple fabrication method is provided. After a silicon film is deposited at approximately 530° C. or less and at a deposition rate of at least approximately 6 Å/minute, thermal oxidation is performed. This ensures an easy-and simple fabrication of a high-performance thin-film semiconductor device. A thin-film semiconductor device capable of low-voltage and high-speed drive is provided. The short-channel type of a TFT circuit with an LDD structure reduces a threshold voltage, increases speed, restrains the power consumption and increases a breakdown voltage. The operational speed of the thin-film semiconductor device is further increased by optimizing the maximum impurity concentration of an LDD portion, a source portion a drain portion, as well as optimizing the LDD length and the channel length. A display system is provided using these TFTs having drive signals at or below approximately the TTL level.

Abstract: The invention provides an active matrix substrate which allows the film quality of a MIS transistor to be evaluated easily and accurately, an electrooptical device using such an active matrix substrate, and a method of producing such an active matrix substrate. On an active matrix substrate, a film quality evaluation region with a size of 1 mm square is formed at a location where neither an image display area, a scanning line driving circuit, a data line driving circuit, nor a signal line is formed. A semiconductor film (silicon film) for film quality evaluation is formed in the film quality evaluation region using the same layer as a heavily doped source/drain region of a TFT and doped with the same impurity at the same concentration as the source/drain region. The semiconductor film for film quality evaluation is exposed through an opening formed through interlayer insulating films, so that it is possible to immediately start evaluation of the film equality.

Abstract: The present invention provides a translucent reflection type electro-optic device that can increase a display light amount in both a reflection mode and a transmission mode, an electronic instrument therewith, and a method of fabricating the translucent reflection type electro-optic device. In a TFT array substrate of a reflection type electro-optic device, on a bottom layer side of a light reflection film, a concavity and convexity formation layer that forms a concavity and convexity pattern can be formed with a first photosensitive resin having a refractive index, n1, on a top layer of the concavity and convexity formation layer a top layer insulating film made of a second photosensitive resin having a refractive index, n2 (n1>n2), is formed, and at a position that overlaps with convexities of the concavity and convexity pattern, a light transmission window is formed.

Abstract: In an existing or new client/server system environment in which a plurality of clients are connected on a network, a function of specifying (selecting) a desired article by a requester, a function of requesting an approver to approve purchase of the specified article, and a function of determining approval or rejection for purchase of the approval-requested article by the approver are realized. A user logs in to this system as a requester or approver from a predetermined Web page displayed on the client in accordance with the user (employee) ID. A user who has logged in as an approver can also use the article specifying function and approval request function.

Abstract: A semiconductor device is provided including a transistor having excellent ON current characteristics and OFF leakage current characteristics, an electro-optical device holding an electro-optical material using the semiconductor device, an electronic apparatus using the electro-optical device, and a method for manufacturing the semiconductor device. For a transistor, a source region and a drain region are impurity regions heavily doped by a self-aligned method relative to a gate electrode. Parts of the gate insulating film overlapping with boundary regions of the channel formation region adjacent to the drain region and the source region, are thicker than a part of the gate insulating film overlapping with a center part of the channel formation region, relative to the longitudinal direction of the channel.

Abstract: The invention provides a semi-transparent reflective electro-optic apparatus capable of increasing a quantity of display light in either of the reflection mode and the transparent mode, and electronic equipment including the same. In a TFT array substrate of a reflective electro-optic apparatus, the back surface of a light-reflecting film includes a light-guiding reflection surface that reflects and guides light incident from the back surface side of a light-transmitting substrate to the surface of the light-reflecting film opposing the light-guiding reflection surface with a light-transmitting window in between. Hence, of the light incident from the back surface side of the light-transmitting substrate, light that is shielded in the related art by the light-reflecting film and does not contribute to display in the transparent mode is partly reflected on the light-guiding reflection surface and thereby contributes to display.

Abstract: The invention provides an active matrix substrate which allows the film quality of a MIS transistor to be evaluated easily and accurately, an electrooptical device using such an active matrix substrate, and a method of producing such an active matrix substrate. On an active matrix substrate, a film quality evaluation region with a size of 1 mm square is formed at a location where neither an image display area, a scanning line driving circuit, a data line driving circuit, nor a signal line is formed. A semiconductor film (silicon film) for film quality evaluation is formed in the film quality evaluation region using the same layer as a heavily doped source/drain region of a TFT and doped with the same impurity at the same concentration as the source/drain region. The semiconductor film for film quality evaluation is exposed through an opening formed through interlayer insulating films, so that it is possible to immediately start evaluation of the film equality.

Abstract: The invention provides an active matrix substrate which allows the film quality of a MIS transistor to be evaluated easily and accurately, an electrooptical device using such an active matrix substrate, and a method of producing such an active matrix substrate. On an active matrix substrate, a film quality evaluation region with a size of 1 mm square is formed at a location where neither an image display area, a scanning line driving circuit, a data line driving circuit, nor a signal line is formed. A semiconductor film (silicon film) for film quality evaluation is formed in the film quality evaluation region using the same layer as a heavily doped source/drain region of a TFT and doped with the same impurity at the same concentration as the source/drain region. The semiconductor film for film quality evaluation is exposed through an opening formed through interlayer insulating films, so that it is possible to immediately start evaluation of the film equality.

Abstract: The present invention provides a translucent reflection type electro-optic device that can increase a display light amount in both a reflection mode and a transmission mode, an electronic instrument therewith, and a method of fabricating the translucent reflection type electro-optic device. In a TFT array substrate of a reflection type electro-optic device, on a bottom layer side of a light reflection film, a concavity and convexity formation layer that forms a concavity and convexity pattern can be formed with a first photosensitive resin having a refractive index, n1, on a top layer of the concavity and convexity formation layer a top layer insulating film made of a second photosensitive resin having a refractive index, n2 (n1>n2), is formed, and at a position that overlaps with convexities of the concavity and convexity pattern, a light transmission window is formed.

Abstract: An improved polycrystalline or polysilicon film having large grain size, such as 1 &mgr;m to 2 &mgr;m in diameter or greater, is obtained over the methods of the prior art by initially forming a silicon film, which may be comprised of amorphous silicon or micro-crystalline silicon or contains micro-crystal regions in the amorphous phase, at a low temperature via a chemical vapor deposition (CVD) method, such as by plasma chemical vapor deposition (PCVD) with silane gas diluted with, for example, hydrogen, argon or helium at a temperature, for example, in the range of room temperature to 600° C. This is followed by solid phase recrystallization of the film to form a polycrystalline film which is conducted at a relatively low temperature in the range of about 550° C. to 650° C. in an inert atmosphere, e.g., N or Ar, for a period of about several hours to 40 or more hours wherein the temperature is gradually increased, e.g., at a temperature rise rate below 20° C./min, preferably about 5° C.

Abstract: A polycrystalline or polysilicon film having large grain size, such as 1 &mgr;m to 2 &mgr;m in diameter or greater, is obtained over the methods of the prior art by initially forming a silicon film, which may be comprised of amorphous silicon or micro-crystalline silicon or contains micro-crystal regions in the amorphous phase, at a low temperature via a chemical vapor deposition (CVD) method, such as by plasma chemical vapor deposition (PCVD) with silane gas diluted with, for example, hydrogen, argon or helium at a temperature, for example, in the range of room temperature to 600° C. This is followed by solid phase recrystallization of the film to form a polycrystalline film which is conducted at a relatively low temperature in the range of about 550° C. to 650° C. in an inert atmosphere, e.g., N or Ar, for a period of about several hours to 40 or more hours wherein the temperature is gradually increased, e.g., at a temperature rise rate below 20° C./min, preferably about 5° C.