Patents by Inventor Satoshi Wakatsuki

Satoshi Wakatsuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device including a plug and method for manufacturing the same
    Patent number: 8742592
    Abstract: According to one embodiment, a method for manufacturing a semiconductor device includes: forming a silicon oxide film on a semiconductor substrate; forming a via in the silicon oxide film; forming a contact layer inside the via; forming a silicon layer on the contact layer; and forming a tungsten film embedded in the via by making a tungsten-containing gas react with the silicon layer.
    Type: Grant
    Filed: March 20, 2012
    Date of Patent: June 3, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Satoshi Wakatsuki, Ichiro Mizushima, Atsuko Sakata, Masayuki Kitamura
  • METHOD FOR FORMING INTERCONNECTION PATTERN AND SEMICONDUCTOR DEVICE
    Publication number: 20130154087
    Abstract: According to one embodiment, a method for forming an interconnection pattern includes forming an insulating pattern, forming a self-assembled film, and forming a conductive layer. The insulating pattern has a side surface on a major surface of a matrix. The self-assembled film has an affinity with a material of the insulating pattern on the side surface of the insulating pattern. The forming the conductive layer includes depositing a conductive material on a side surface of the self-assembled film.
    Type: Application
    Filed: June 18, 2012
    Publication date: June 20, 2013
    Inventors: Yasuhito YOSHIMIZU, Satoshi Wakatsuki, Hisashi Okuchi, Atsuko Sakata, Hiroshi Tomita
  • SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20130075912
    Abstract: According to one embodiment, a method for manufacturing a semiconductor device includes: forming a silicon oxide film on a semiconductor substrate; forming a via in the silicon oxide film; forming a contact layer inside the via; forming a silicon layer on the contact layer; and forming a tungsten film embedded in the via by making a tungsten-containing gas react with the silicon layer.
    Type: Application
    Filed: March 20, 2012
    Publication date: March 28, 2013
    Inventors: Satoshi Wakatsuki, Ichiro Mizushima, Atsuko Sakata, Masayuki Kitamura
  • METHOD FOR FABRICATING ELECTRONIC COMPONENT AND ELECTRO-PLATING APPARATUS
    Publication number: 20110297551
    Abstract: A method for fabricating an electronic component according to an Embodiment, includes a seed film forming process and an electro-plating process. In the seed film forming process, a seed film is formed above a substrate. In the electro-plating process, electro-plating is performed by soaking the seed film in a plating solution in a plating bath to which the plating solution being bubbled by a nitrogen gas is supplied, using the seed film as a cathode.
    Type: Application
    Filed: March 17, 2011
    Publication date: December 8, 2011
    Inventors: Toshiyuki MORITA, Satoshi Wakatsuki