Patents by Inventor Satoshi Yamasaki

Satoshi Yamasaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6063825
    Abstract: A flexible polyurethane foam prepared by reacting polyisocyanate with polyol and/or polymer polyol containing dispersed polymer microparticles obtained by polymerizing an unsaturated compound, water, catalyst, surfactant and, when needed, crosslinking agent and other auxiliary agents, wherein a portion or the whole of the polyol and/or the polymer polyol is prepared in the presence of a compound having a nitrogen-phosphorus double bond as a catalyst, have excellent wet compression set, fatigue by constant-load pounding and dynamic durability.
    Type: Grant
    Filed: August 19, 1998
    Date of Patent: May 16, 2000
    Assignee: Mitsui Chemicals, Inc.
    Inventors: Masahiro Isobe, Kazuhiko Ohkubo, Seijiro Sakai, Usaji Takaki, Tadahito Nobori, Tsukuru Izukawa, Satoshi Yamasaki
  • Patent number: 5885747
    Abstract: A charged beam lithography method comprising the method steps shown in the Figure below.
    Type: Grant
    Filed: August 26, 1996
    Date of Patent: March 23, 1999
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Satoshi Yamasaki, Shuichi Tamamushi, Hirohito Anze
  • Patent number: 5451487
    Abstract: In an electron beam lithographic method including a correction radiation step based on the ghost method, the entire correction region is divided into small regions, each having a size smaller than a spread of backscattering of an electron beam and larger than a minimum figure which can be drawn. Representative figures are set, as radiation unit figures in the respective small regions, to be smaller in number than the number of times of radiation to be performed when the desired patterns in the small regions are drawn as black/white-inverted patterns. Exposure dose are set for the representative figures in the respective small regions. The electron beam is defocused to increase a beam size to a size roughly coinciding with the spread of backscattering, and the representative figures in the respective small regions are drawn with the set exposure dose.
    Type: Grant
    Filed: March 14, 1994
    Date of Patent: September 19, 1995
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Takayuki Abe, Satoshi Yamasaki
  • Patent number: 5305225
    Abstract: In an electron beam lithography method which irradiates a sample with an electron beam to draw a desired pattern on the sample, figure data representing the shape of an elemental figure, placement data representing placement information of the figure data, and dose data representing dose for each of areas which are obtained by dividing a drawing area which are smaller than the broadening of backscattering of an electron beam are independently stored in a memory as drawing data. On the basis of the drawing data, the figure data is divided into unit figures each of which has a predetermined shape and is smaller than a predetermined size. A represented point of each unit figure is calculated, a dose of an electron beam is obtained from the data set for an area in which the represented point is present, and the quantity of radiation is determined as dose for the unit figure.
    Type: Grant
    Filed: April 30, 1992
    Date of Patent: April 19, 1994
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Toshio Yamaguchi, Satoshi Yamasaki, Takayuki Abe
  • Patent number: 4532373
    Abstract: An amorphous photovoltaic energy conversion element for use in a solar cell is composed of a first layer formed of a p-type material, a second layer formed of an intrinsic amorphous semiconductor having a potential gradient formed therein and a third layer formed of a metal capable of coming into ohmic contact with the aforementioned intrinsic layer of amorphous semiconductor and exhibiting a lower work function than the work function of the intrinsic layer of amorphous semiconductor.
    Type: Grant
    Filed: March 14, 1984
    Date of Patent: July 30, 1985
    Assignee: Agency of Industrial Science & Technology, Ministry of International Trade and Industry
    Inventors: Hideharu Matsuura, Kazunobu Tanaka, Akihisa Matsuda, Hideyo Okushi, Hidetoshi Oheda, Satoshi Yamasaki, Nobuhiro Hata