Abstract: Various implementations described herein are directed to a method that defines tiers of an integrated circuit having standard cells placed adjacent to each other in a multi-tier placement. The integrated circuit includes multi-tier nets connected with inter-tier connections. The method includes pairing inter-tier connections as inter-tier-connection pairs belonging to a same net. The method includes grouping standard cells in groups with or without inter-tier-connection pairs from the tiers. The method includes relating the standard cells with or without inter-tier-connection pairs within each group from the groups by generating a multi-tier fence boundary around physical locations of the standard cells with or without inter-tier-connection pairs.

Abstract: Implementations described herein are directed to a device with a processor and memory having stored thereon instructions that, when executed by the processor, cause the processor to acquire an integrated circuit layout of physical cells from a database and define wirelength relationships between input/output connections and a cell count for the physical cells in multiple domains. The instructions may cause the processor to define wirelength parameters of the integrated circuit layout in each domain of the multiple domains and generate a data file for the integrated circuit layout of the physical cells based on the wirelength relationships and the wirelength parameters to guide power and performance of the integrated circuit layout of the physical cells. The instructions may cause the processor to fabricate, or contribute to the fabrication of, an integrated circuit based on the data file for the integrated circuit layout of the physical cells.

Abstract: Broadly speaking, embodiments of the present technique provide a neuron for a spiking neural network, where the neuron is formed of at least one Correlated Electron Random Access Memory (CeRAM) element or Correlated Electron Switch (CES) element.

Abstract: Various implementations described herein may be directed to using inter-tier vias (IVs) in integrated circuits (ICs). In one implementation, a three-dimensional (3D) IC may include a plurality of tiers disposed on a substrate layer, where the tiers may include a first tier having a first active device layer electrically coupled to first interconnect layers, and may also include a second tier having a second active device layer electrically coupled to a second interconnect layer, where the first interconnect layers include an uppermost layer that is least proximate to the first active device layer. The 3D IC may further include IVs to electrically couple the second interconnect layer and the uppermost layer. The uppermost layer may be electrically coupled to a power source at peripheral locations of the first tier, thereby electrically coupling the power source to the first active device layer and to the second active device layer.

Abstract: A method for generating a design for a 3D integrated circuit (3DIC) comprises extracting at least one design characteristic from a first data representation of a design for a integrated circuit (2DIC) generated according to the design criteria required for the 3DIC. Components of the 3DIC are partitioned into groups (each representing one tier of the 3DIC) based on the extracted design characteristic. A second data representation of a 2DIC design is generated comprising multiple adjacent partitions each comprising the component groups for one tier of the 3DIC design together with inter-tier via ports representing locations of inter-tier vias. A placement for each partition is determined separately from a placement of corresponding components of the 2DIC represented by the original first data representation. This approach allows a 2DIC EDA tool to be used for designing a 3DIC.

Abstract: Various implementations described herein may be directed to using inter-tier vias (IVs) in integrated circuits (ICs). In one implementation, a three-dimensional (3D) IC may include a plurality of tiers disposed on a substrate layer, where the tiers may include a first tier having a first active device layer electrically coupled to first interconnect layers, and may also include a second tier having a second active device layer electrically coupled to a second interconnect layer, where the first interconnect layers include an uppermost layer that is least proximate to the first active device layer. The 3D IC may further include IVs to electrically couple the second interconnect layer and the uppermost layer. The uppermost layer may be electrically coupled to a power source at peripheral locations of the first tier, thereby electrically coupling the power source to the first active device layer and to the second active device layer.