Patents by Inventor Saurabh Ullal
Saurabh Ullal has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20140261158Abstract: A furnace for growing sapphire crystal in which the furnace comprises a furnace housing; a hot zone which comprises insulation and a heater which are both accommodated within the furnace housing; a crucible located within the hot zone and the crucible has an opening. Either a crucible lid covers the opening of the crucible, and the crucible lid has a first conduit which extends therefrom or a crucible enclosure surrounds at least a side wall and a top portion of the crucible and the crucible enclosure is impermeable to at least carbon preventing carbon contamination of a melt contained within the crucible.Type: ApplicationFiled: March 12, 2014Publication date: September 18, 2014Applicant: ADVANCED RENEWABLEENERGY COMPANY, LLCInventors: Thomas DeWayne WENDEL, Matthew Gary KLOTZ, David M KENT, Nicholas Joseph SERPA, Chandra P KHATTAK, Saurabh ULLAL
-
Patent number: 8797705Abstract: A method for optimizing a dechuck sequence, which includes removing a substrate from a lower electrode. The method includes performing an initial analysis to determine if a first set of electrical characteristic data of a plasma formed during the dechuck sequence traverses a threshold values. If so, turning off the inert gas. The method also includes raising the lifter pins slightly from the lower electrode to move the substrate in an upward direction. The method further includes performing a mechanical and electrical analysis, which includes comparing a first set of mechanical data, which includes an amount of force exerted by the lifter pins, against a threshold value. The mechanical and electrical analysis also includes comparing a second set of electrical characteristic data against a threshold value. If both traverse the respective threshold value, removes the substrate from the lower electrode since a substrate-released event has occurred.Type: GrantFiled: September 10, 2009Date of Patent: August 5, 2014Assignee: Lam Research CorporationInventors: John C. Valcore, Jr., Saurabh Ullal, Daniel Byun, Ed Santos, Konstantin Makhratchev
-
Patent number: 8410393Abstract: A recirculation system of a substrate support on which a semiconductor substrate is subjected to a multistep process in a vacuum chamber, the system comprising a substrate support having at least one liquid flow passage in a base plate thereof, an inlet and an outlet in fluid communication with the flow passage, a supply line in fluid communication with the inlet, and a return line in fluid communication with the outlet; a first recirculator providing liquid at temperature T1 in fluid communication with the supply line and the return line; a second recirculator providing liquid at temperature T2 in fluid communication with the supply line and the return line, temperature T2 being at least 10° C. above temperature T1; a pre-cooling unit providing liquid at temperature Tpc connected to the inlet and the outlet, temperature Tpc being at least 10° C. below T1; a pre-heating unit providing liquid at temperature Tph connected to the inlet and the outlet, temperature Tph being at least 10° C.Type: GrantFiled: May 24, 2010Date of Patent: April 2, 2013Assignee: Lam Research CorporationInventors: Anthony Ricci, Saurabh Ullal, Michael Kang, Matthew Busche
-
Patent number: 8313665Abstract: Showerhead electrode assemblies are disclosed, which include a showerhead electrode adapted to be mounted in an interior of a vacuum chamber; an optional backing plate attached to the showerhead electrode; a thermal control plate attached to the backing plate or to the showerhead electrode at multiple contact points across the backing plate; and at least one thermally and electrically conductive gasket separating the backing plate and the thermal control plate, or the backing plate and showerhead electrode, at the contact points. Methods of processing semiconductor substrates using the showerhead electrode assemblies are also disclosed.Type: GrantFiled: November 24, 2010Date of Patent: November 20, 2012Assignee: Lam Research CorporationInventors: Thomas R. Stevenson, Anthony de la Llera, Saurabh Ullal
-
Publication number: 20120153971Abstract: The present invention provides a reliable, non-invasive, electrical test method for predicting satisfactory performance of electrostatic chucks (ESCs). In accordance with an aspect of the present invention, a parameter, e.g., impedance, of an ESC is measured over a frequency band to generate a parameter functions. This parameter function may be used to establish predetermined acceptable limits of the parameter within the frequency band.Type: ApplicationFiled: February 13, 2012Publication date: June 21, 2012Inventors: Hong Shih, Saurabh Ullal, Tuochuan Huang, Yan Fang, Jon McChesney
-
Patent number: 8143904Abstract: The present invention provides a reliable, non-invasive, electrical test method for predicting satisfactory performance of electrostatic chucks (ESCs). In accordance with an aspect of the present invention, a parameter, e.g., impedance, of an ESC is measured over a frequency band to generate a parameter functions. This parameter function may be used to establish predetermined acceptable limits of the parameter within the frequency band.Type: GrantFiled: October 10, 2008Date of Patent: March 27, 2012Assignee: Lam Research CorporationInventors: Hong Shih, Saurabh Ullal, Tuochuan Huang, Yan Fang, Jon McChesney
-
Publication number: 20120024449Abstract: Parasitic plasma in voids in a component of a plasma processing chamber can be eliminated by covering electrically conductive surfaces in an interior of the voids with a sleeve. The voids can be gas holes, lift pin holes, helium passages, conduits and/or plenums in chamber components such as an upper electrode and a substrate support.Type: ApplicationFiled: July 27, 2010Publication date: February 2, 2012Applicant: Lam Research CorporationInventors: Anthony Ricci, Saurabh Ullal, Larry Martinez
-
Publication number: 20110284505Abstract: A recirculation system of a substrate support on which a semiconductor substrate is subjected to a multistep process in a vacuum chamber, the system comprising a substrate support having at least one liquid flow passage in a base plate thereof, an inlet and an outlet in fluid communication with the flow passage, a supply line in fluid communication with the inlet, and a return line in fluid communication with the outlet; a first recirculator providing liquid at temperature T1 in fluid communication with the supply line and the return line; a second recirculator providing liquid at temperature T2 in fluid communication with the supply line and the return line, temperature T2 being at least 10° C. above temperature T1; a pre-cooling unit providing liquid at temperature Tpc connected to the inlet and the outlet, temperature Tpc being at least 10° C. below T1; a pre-heating unit providing liquid at temperature Tph connected to the inlet and the outlet, temperature Tph being at least 10° C.Type: ApplicationFiled: May 24, 2010Publication date: November 24, 2011Applicant: Lam Research CorporationInventors: Anthony Ricci, Saurabh Ullal, Michael Kang, Matthew Busche
-
Publication number: 20110081783Abstract: Showerhead electrode assemblies are disclosed, which include a showerhead electrode adapted to be mounted in an interior of a vacuum chamber; an optional backing plate attached to the showerhead electrode; a thermal control plate attached to the backing plate or to the showerhead electrode at multiple contact points across the backing plate; and at least one thermally and electrically conductive gasket separating the backing plate and the thermal control plate, or the backing plate and showerhead electrode, at the contact points. Methods of processing semiconductor substrates using the showerhead electrode assemblies are also disclosed.Type: ApplicationFiled: November 24, 2010Publication date: April 7, 2011Applicant: Lam Research CorporationInventors: Thomas R. Stevenson, Anthony de la Llera, Säurabh Ullal
-
Publication number: 20110058302Abstract: A method for optimizing a dechuck sequence, which includes removing a substrate from a lower electrode. The method includes performing an initial analysis to determine if a first set of electrical characteristic data of a plasma formed during the dechuck sequence traverses a threshold values. If so, turning off the inert gas. The method also includes raising the lifter pins slightly from the lower electrode to move the substrate in an upward direction. The method further includes performing a mechanical and electrical analysis, which includes comparing a first set of mechanical data, which includes an amount of force exerted by the lifter pins, against a threshold value. The mechanical and electrical analysis also includes comparing a second set of electrical characteristic data against a threshold value. If both traverse the respective threshold value, removes the substrate from the lower electrode since a substrate-released event has occurred.Type: ApplicationFiled: September 10, 2009Publication date: March 10, 2011Inventors: John C. Valcore, JR., Saurabh Ullal, Daniel Byun, Ed Santos, Konstantin Makhratchev
-
Publication number: 20110024049Abstract: An electrostatic chuck assembly is provided comprising a ceramic contact layer, a patterned bonding layer, an electrically conductive base plate, and a subterranean arc mitigation layer. The ceramic contact layer and the electrically conductive base plate cooperate to define a plurality of hybrid gas distribution channels formed in a subterranean portion of the electrostatic chuck assembly. Individual ones of the hybrid gas distribution channels comprise surfaces of relatively high electrical conductivity presented by the electrically conductive base plate and relatively low electrical conductivity presented by the ceramic contact layer. The subterranean arc mitigation layer comprises a layer of relatively low electrical conductivity and is formed over the relatively high conductivity surfaces of the hybrid gas distribution channels in the subterranean portion of the electrostatic chuck assembly. Semiconductor wafer processing chambers are also provided.Type: ApplicationFiled: July 30, 2009Publication date: February 3, 2011Applicant: c/o Lam Research CorporationInventors: Tom Stevenson, Daniel Byun, Saurabh Ullal, Babak Kadkhodayan, Rajinder Dhindsa
-
Patent number: 7862682Abstract: Showerhead electrode assemblies are disclosed, which include a showerhead electrode adapted to be mounted in an interior of a vacuum chamber; an optional backing plate attached to the showerhead electrode; a thermal control plate attached to the backing plate or to the showerhead electrode at multiple contact points across the backing plate; and at least one thermally and electrically conductive gasket separating the backing plate and the thermal control plate, or the backing plate and showerhead electrode, at the contact points. Methods of processing semiconductor substrates using the showerhead electrode assemblies are also disclosed.Type: GrantFiled: August 31, 2007Date of Patent: January 4, 2011Assignee: Lam Research CorporationInventors: Thomas R. Stevenson, Anthony de le Llera, Saurabh Ullal
-
Publication number: 20100090711Abstract: The present invention provides a reliable, non-invasive, electrical test method for predicting satisfactory performance of electrostatic chucks (ESCs). In accordance with an aspect of the present invention, a parameter, e.g., impedance, of an ESC is measured over a frequency band to generate a parameter functions. This parameter function may be used to establish predetermined acceptable limits of the parameter within the frequency band.Type: ApplicationFiled: October 10, 2008Publication date: April 15, 2010Inventors: Hong Shih, Saurabh Ullal, Tuochuan Huang, Yan Fang, Jon McChesney
-
Patent number: 7682980Abstract: A method for etching a polysilicon gate structure in a plasma etch chamber is provided. The method initiates with defining a pattern protecting a polysilicon film to be etched. Then, a plasma is generated. Next, substantially all of the polysilicon film that is unprotected is etched. Then, a silicon containing gas is introduced and a remainder of the polysilicon film is etched while introducing a silicon containing gas. An etch chamber configured to introduce a silicon containing gas during an etch process is also provided.Type: GrantFiled: January 25, 2007Date of Patent: March 23, 2010Assignee: Lam Research CorporationInventors: Helene Del Puppo, Frank Lin, Chris Lee, Vahid Vahedi, Thomas A. Kamp, Alan J. Miller, Saurabh Ullal, Harmeet Singh
-
Publication number: 20080308228Abstract: Showerhead electrode assemblies are disclosed, which include a showerhead electrode adapted to be mounted in an interior of a vacuum chamber; an optional backing plate attached to the showerhead electrode; a thermal control plate attached to the backing plate or to the showerhead electrode at multiple contact points across the backing plate; and at least one thermally and electrically conductive gasket separating the backing plate and the thermal control plate, or the backing plate and showerhead electrode, at the contact points. Methods of processing semiconductor substrates using the showerhead electrode assemblies are also disclosed.Type: ApplicationFiled: August 31, 2007Publication date: December 18, 2008Applicant: Lam Research CorporationInventors: Thomas R. Stevenson, Anthony de la Llera, Saurabh Ullal
-
Publication number: 20080087641Abstract: Components for a plasma processing apparatus are provided, including fastener members adapted to accommodate the stresses generated during thermal cycling. The fasteners include deflectable spacers to accommodate forces generated by the difference in thermal expansion while minimizing generation of additional particulate contamination.Type: ApplicationFiled: December 15, 2006Publication date: April 17, 2008Applicant: Lam Research CorporationInventors: Anthony De La Llera, Saurabh Ullal
-
Publication number: 20070119545Abstract: A semiconductor processing system is provided. The semiconductor processing system includes a chamber. The chamber includes a gas inlet, a top electrode configured to strike a plasma inside the chamber, and a support for holding a substrate. A controller configured to detect a passivation starved condition during an etching operation is provided. The controller is further configured to introduce a passivation enhancing gas through the gas inlet during the etching operation in response to detecting the passivation starved condition.Type: ApplicationFiled: January 25, 2007Publication date: May 31, 2007Inventors: Helene Del Puppo, Frank Lin, Chris Lee, Vahid Vahedi, Thomas Kamp, Alan Miller, Saurabh Ullal, Harmeet Singh
-
Publication number: 20070117399Abstract: A method for etching a polysilicon gate structure in a plasma etch chamber is provided. The method initiates with defining a pattern protecting a polysilicon film to be etched. Then, a plasma is generated. Next, substantially all of the polysilicon film that is unprotected is etched. Then, a silicon containing gas is introduced and a remainder of the polysilicon film is etched while introducing a silicon containing gas. An etch chamber configured to introduce a silicon containing gas during an etch process is also provided.Type: ApplicationFiled: January 25, 2007Publication date: May 24, 2007Inventors: Helene Del Puppo, Frank Lin, Chris Lee, Vahid Vahedi, Thomas Kamp, Alan Miller, Saurabh Ullal, Harmeet Singh
-
Patent number: 7186661Abstract: A method for etching a polysilicon gate structure in a plasma etch chamber is provided. The method initiates with defining a pattern protecting a polysilicon film to be etched. Then, a plasma is generated. Next, substantially all of the polysilicon film that is unprotected is etched. Then, a silicon containing gas is introduced and a remainder of the polysilicon film is etched while introducing a silicon containing gas. An etch chamber configured to introduce a silicon containing gas during an etch process is also provided.Type: GrantFiled: June 27, 2003Date of Patent: March 6, 2007Assignee: Lam Research CorporationInventors: Helene Del Puppo, Frank Lin, Chris Lee, Vahid Vahedi, Thomas A. Kamp, Alan J. Miller, Saurabh Ullal, Harmeet Singh