Abstract: A system and method for an acoustically driven ferromagnetic resonance (ADFMR) based sensor including: a power source, that provides an electrical signal to power the system; and an ADFMR circuit, sensitive to electromagnetic fields, wherein the ADFMR circuit comprises an ADFMR device. The system functions to detect and measure external electromagnetic (EM) fields by measuring a perturbation of the electrical signal through the ADFMR circuit due to the EM fields.

Abstract: A magnetic memory structure employs electric-field controlled interlayer exchange coupling between a free magnetic layer and a fixed magnetic layer to switch a magnetization direction. The magnetic layers are separated by a spacer layer disposed between two oxide layers. The spacer layer exhibits a large IEC while the oxide layers provide tunnel barriers, forming a quantum-well between the magnetic layers with discrete energy states above the equilibrium Fermi level. When an electric field is applied across the structure, the tunnel barriers become transparent at discrete energy states via a resonant tunneling phenomenon. The wave functions of the two magnets then can interact and interfere to provide a sizable IEC. IEC can control the magnetization direction of the free magnetic layer relative to the magnetization direction of the fixed magnetic layer depending on the sign of the IEC, induced by a magnitude of the applied electric field above a threshold value.

Abstract: A magnetic memory structure employs electric-field controlled interlayer exchange coupling between a free magnetic layer and a fixed magnetic layer to switch a magnetization direction. The magnetic layers are separated by a spacer layer disposed between two oxide layers. The spacer layer exhibits a large IEC while the oxide layers provide tunnel barriers, forming a quantum-well between the magnetic layers with discrete energy states above the equilibrium Fermi level. When an electric field is applied across the structure, the tunnel barriers become transparent at discrete energy states via a resonant tunneling phenomenon. The wave functions of the two magnets then can interact and interfere to provide a sizable IEC. IEC can control the magnetization direction of the free magnetic layer relative to the magnetization direction of the fixed magnetic layer depending on the sign of the IEC, induced by a magnitude of the applied electric field above a threshold value.

Abstract: An electronic device with embedded access to a high-bandwidth, high-capacity fast-access memory includes (a) a memory circuit fabricated on a first semiconductor die, wherein the memory circuit includes numerous modular memory units, each modular memory unit having (i) a three-dimensional array of storage transistors, and (ii) a group of conductors exposed to a surface of the first semiconductor die, the group of conductors being configured for communicating control, address and data signals associated the memory unit; and (b) a logic circuit fabricated on a second semiconductor die, wherein the logic circuit also includes conductors each exposed at a surface of the second semiconductor die, wherein the first and second semiconductor dies are wafer-bonded, such that the conductors exposed at the surface of the first semiconductor die are each electrically connected to a corresponding one of the conductors exposed to the surface of the second semiconductor die.

Abstract: NOR memory strings may be used for implementations of logic functions involving many Boolean variables, or to generate analog signals whose magnitudes are each representative of the bit values of many Boolean variables. The advantage of using NOR memory strings in these manners is that the logic function or analog signal generation may be accomplished within one simultaneous read operation on the NOR memory strings.

Abstract: A two-terminal stochastic switch is disclosed. The switch includes a magnetic tunnel junction (MTJ) stack, an access switch controlled by a first terminal and coupled to the MTJ stack, such that when the access switch is on, electrical current flows from a first source coupled to the MTJ stack, through the MTJ stack, and through the access switch to a second source, and a digital buffer coupled to the MTJ stack and the access switch which is configured to transform an analog signal associated with a voltage division across the MTJ stack and the access switch to a digital signal, output of the digital buffer forming a second terminal.

Abstract: An acoustically driven ferromagnetic resonance (ADFMR) device includes a piezoelectric element, a pair of transducers arranged to activate the piezoelectric element to generate an acoustic wave, a magnetostrictive element arranged to receive the acoustic wave, and a readout circuit to detect one of either a change in the magnetostrictive element or a change in the acoustic wave.

Abstract: Methods and memory circuits for altering a magnetic direction of a magnetic memory cell using picosecond electric current pulses are disclosed. One method includes directing a first electric current pulse through the magnetic memory cell that includes a ferrimagnetic material layer to heat the ferrimagnetic material layer to toggle a magnetic direction of the ferrimagnetic material layer from a first magnetic direction to a second magnetic direction.

Abstract: A two-terminal stochastic switch is disclosed. The switch includes a magnetic tunnel junction (MTJ) stack, an access switch controlled by a first terminal and coupled to the MTJ stack, such that when the access switch is on, electrical current flows from a first source coupled to the MTJ stack, through the MTJ stack, and through the access switch to a second source, and a digital buffer coupled to the MTJ stack and the access switch which is configured to transform an analog signal associated with a voltage division across the MTJ stack and the access switch to a digital signal, output of the digital buffer forming a second terminal.

Abstract: Methods and memory circuits for altering a magnetic direction of a magnetic memory cell using picosecond electric current pulses are disclosed. One method includes directing a first electric current pulse through the magnetic memory cell that includes a ferrimagnetic material layer to heat the ferrimagnetic material layer to toggle a magnetic direction of the ferrimagnetic material layer from a first magnetic direction to a second magnetic direction.

Abstract: Illustrative embodiments of all-spin logic devices, circuits, and methods are disclosed. In one embodiment, an all-spin logic device may include a first nanomagnet, a second nanomagnet, and a spin-coherent channel extending between the first and second nanomagnets. The spin-coherent channel may be configured to conduct a spin current from the first nanomagnet to the second nanomagnet to determine a state of the second nanomagnet in response to a state of the first nanomagnet.

Abstract: Illustrative embodiments of all-spin logic devices, circuits, and methods are disclosed. In one embodiment, an all-spin logic device may include a first nanomagnet, a second nanomagnet, and a spin-coherent channel extending between the first and second nanomagnets. The spin-coherent channel may be configured to conduct a spin current from the first nanomagnet to the second nanomagnet to determine a state of the second nanomagnet in response to a state of the first nanomagnet.

Abstract: A transistor device may comprise a source having a first ferromagnetic contact thereto, a drain having a second ferromagnetic contact thereto, an electrically conductive gate positioned over a channel region separating the source and the drain, and an electrically insulating layer disposed between the gate and the channel region. The first and second ferromagnetic contacts have anti-parallel magnetic orientations relative to each other. The electrically insulating layer includes a number of paramagnetic impurities each having two spin states such that electrons interacting with the paramagnetic impurities cause the paramagnetic impurities to flip between the two spin states.

Abstract: A transistor device may comprise a source having a first ferromagnetic contact thereto, a drain having a second ferromagnetic contact thereto, an electrically conductive gate positioned over a channel region separating the source and the drain, and an electrically insulating layer disposed between the gate and the channel region. The first and second ferromagnetic contacts have anti-parallel magnetic orientations relative to each other. The electrically insulating layer includes a number of paramagnetic impurities each having two spin states such that electrons interacting with the paramagnetic impurities cause the paramagnetic impurities to flip between the two spin states.