Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

Abstract: A method and apparatus for calibration non-contact temperature sensors within a process chamber are described herein. The calibration of the non-contact temperature sensors includes the utilization of a band edge detector to determine the band edge absorption wavelength of a substrate. The band edge detector is configured to measure the intensity of a range of wavelengths and determines the actual temperature of a substrate based off the band edge absorption wavelength and the material of the substrate. The calibration method is automated and does not require human intervention or disassembly of a process chamber for each calibration.

Abstract: A batch processing chamber and a process kit for use therein are provided. The process kit includes an outer liner having an upper outer liner and a lower outer liner, an inner liner, and a top plate and a bottom plate attached to an inner surface of the inner liner. The top plate and the bottom plate form an enclosure together with the inner liner, and a cassette is disposed within the enclosure. The cassette including shelves configured to retain a plurality of substrates thereon. The inner liner has inlet openings disposed on an injection side of the inner liner and configured to be in fluid communication with a gas injection assembly of a processing chamber, and outlet openings disposed on an exhaust side of the inner liner and configured to be in fluid communication with a gas exhaust assembly of the processing chamber. The inner surfaces of the enclosure comprise material configured to cause black-body radiation within the enclosure.

Abstract: Embodiments of the present disclosure generally relate to methods and systems for cleaning a surface of a substrate. In an embodiment, a method of processing a substrate is provided. The method includes introducing a substrate to a processing volume of a processing chamber by positioning the substrate on a substrate support. The method further includes flowing a first process gas into the processing volume, the first process gas comprising HF, flowing a second process gas into the processing volume, the second process gas comprising pyridine, pyrrole, aniline, or a combination thereof, and exposing the substrate to the first process gas and the second process gas to remove oxide from the substrate under oxide removal conditions. In another embodiment, a system is provided that includes a processing chamber to process a substrate, and a controller to cause a processing method to be performed in the processing chamber.

Abstract: A process kit for use in a processing chamber includes an outer liner, an inner liner configured to be in fluid communication with a gas injection assembly and a gas exhaust assembly of a processing chamber, a first ring reflector disposed between the outer liner and the inner liner, a top plate and a bottom plate attached to an inner surface of the inner liner, the top plate and the bottom plate forming an enclosure together with the inner liner, a cassette disposed within the enclosure, the cassette comprising a plurality of shelves configured to retain a plurality of substrates thereon, and an edge temperature correcting element disposed between the inner liner and the first ring reflector.

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More specifically, implementations disclosed herein relate to apparatus, systems, and methods for reducing substrate outgassing. A substrate is processed in an epitaxial deposition chamber for depositing an arsenic-containing material on a substrate and then transferred to a degassing chamber for reducing arsenic outgassing on the substrate. The degassing chamber includes a gas panel for supplying hydrogen, nitrogen, and oxygen and hydrogen chloride or chlorine gas to the chamber, a substrate support, a pump, and at least one heating mechanism. Residual or fugitive arsenic is removed from the substrate such that the substrate may be removed from the degassing chamber without dispersing arsenic into the ambient environment.

Abstract: Embodiments of the present disclosure generally relate to methods and systems for cleaning a surface of a substrate. In an embodiment, a method of processing a substrate is provided. The method includes introducing a substrate to a processing volume of a processing chamber by positioning the substrate on a substrate support. The method further includes flowing a first process gas into the processing volume, the first process gas comprising HF, flowing a second process gas into the processing volume, the second process gas comprising pyridine, pyrrole, aniline, or a combination thereof, and exposing the substrate to the first process gas and the second process gas to remove oxide from the substrate under oxide removal conditions. In another embodiment, a system is provided that includes a processing chamber to process a substrate, and a controller to cause a processing method to be performed in the processing chamber.

Abstract: One or more embodiments herein relate to methods for detection using optical emission spectroscopy. In these embodiments, an optical signal is delivered from the process chamber to an optical emission spectrometer (OES). The OES identifies emission peaks of photons, which corresponds to the optical intensity of radiation from the photons, to determine the concentrations of each of the precursor gases and reaction products. The OES sends input signals of the data results to a controller. The controller can adjust process variables within the process chamber in real time during deposition based on the comparison. In other embodiments, the controller can automatically trigger a process chamber clean based on a comparison of input signals of process chamber residues received before the deposition process and input signals of process chamber residues received after the deposition process.

Abstract: A method and apparatus for calibration non-contact temperature sensors within a process chamber are described herein. The calibration of the non-contact temperature sensors includes the utilization of a band edge detector to determine the band edge absorption wavelength of a substrate. The band edge detector is configured to measure the intensity of a range of wavelengths and determines the actual temperature of a substrate based off the band edge absorption wavelength and the material of the substrate. The calibration method is automated and does not require human intervention or disassembly of a process chamber for each calibration.

Abstract: Generally, examples described herein relate to methods and processing chambers and systems for forming a stacked pixel structure using epitaxial growth processes and device structures formed thereby. In an example, a first sensor layer is epitaxially grown on a crystalline surface on a substrate. A first isolation structure is epitaxially grown on the first sensor layer. A second sensor layer is epitaxially grown on the first isolation structure. A second isolation structure is epitaxially grown on the second sensor layer. A third sensor layer is epitaxially grown on the second isolation structure.

Abstract: A substrate processing system includes a factory interface having a controlled environment and a transfer chamber. The transfer chamber includes four first facets and three second facets, where each of the three second facets has a width that is narrower than that of each of the four first facets. A first processing chamber is attached to one of the four first facets. A first auxiliary chamber is attached to a first of the three second facets, where the first auxiliary chamber is smaller than the first processing chamber. A load lock is attached to a second of the three second facets and to the factory interface. A robot is attached to a bottom of the transfer chamber, the robot adapted to transfer substrates to and from the first processing chamber, the first auxiliary chamber, and the load lock.

Abstract: A method and apparatus for calibration non-contact temperature sensors within a process chamber are described herein. The calibration of the non-contact temperature sensors includes the utilization of a band edge detector to determine the band edge absorption wavelength of a substrate. The band edge detector is configured to measure the intensity of a range of wavelengths and determines the actual temperature of a substrate based off the band edge absorption wavelength and the material of the substrate. The calibration method is automated and does not require human intervention or disassembly of a process chamber for each calibration.

Abstract: An apparatus for controlling temperature profile of a substrate within an epitaxial chamber includes a bottom center pyrometer and a bottom outer pyrometer to respectively measure temperatures at a center location and an outer location of a first surface of a susceptor of an epitaxy chamber, a top center pyrometer and a top outer pyrometer to respectively measure temperatures at a center location and an outer location of a substrate disposed on a second surface of the susceptor opposite the first surface, a first controller to receive signals, from the bottom center pyrometer and the bottom outer pyrometer, and output a feedback signal to a first heating lamp module that heats the first surface based on the measured temperatures of the first surface, and a second controller to receive signals, from the top center pyrometer, the top outer pyrometer, the bottom center pyrometer, and the bottom outer pyrometer, and output a feedback signal to a second heating lamp module that heats the substrate based on the mea

Abstract: Aspects of the present disclosure relate to apparatus, systems, and methods of using atomic hydrogen radicals with epitaxial deposition. In one aspect, nodular defects (e.g., nodules) are removed from epitaxial layers of substrate. In one implementation, a method of processing substrates includes selectively growing an epitaxial layer on one or more crystalline surfaces of a substrate. The epitaxial layer includes silicon. The method also includes etching the substrate to remove a plurality of nodules from one or more non-crystalline surfaces of the substrate. The etching includes exposing the substrate to atomic hydrogen radicals. The method also includes thermally annealing the epitaxial layer to an anneal temperature that is 600 degrees Celsius or higher.

Abstract: Embodiments of the present disclosure generally relate to methods and systems for cleaning a surface of a substrate. In an embodiment, a method of processing a substrate is provided. The method includes introducing a substrate to a processing volume of a processing chamber by positioning the substrate on a substrate support. The method further includes flowing a first process gas into the processing volume, the first process gas comprising HF, flowing a second process gas into the processing volume, the second process gas comprising pyridine, pyrrole, aniline, or a combination thereof, and exposing the substrate to the first process gas and the second process gas to remove oxide from the substrate under oxide removal conditions. In another embodiment, a system is provided that includes a processing chamber to process a substrate, and a controller to cause a processing method to be performed in the processing chamber.

Abstract: A method and apparatus for calibration non-contact temperature sensors within a process chamber are described herein. The calibration of the non-contact temperature sensors includes the utilization of a band edge detector to determine the band edge absorption wavelength of a substrate. The band edge detector is configured to measure the intensity of a range of wavelengths and determines the actual temperature of a substrate based off the band edge absorption wavelength and the material of the substrate. The calibration method is automated and does not require human intervention or disassembly of a process chamber for each calibration.

Abstract: A susceptor for use in a processing chamber for supporting a wafer includes a susceptor substrate having a front side and a back side opposite the front side, and a coating layer deposited on the susceptor substrate. The front side has a pocket configured to hold a wafer to be processed in a processing chamber, the pocket being textured with a first pattern. The back side is textured with a second pattern.