Abstract: An ion source with improved temperature control is disclosed. A portion of the ion source is nestled within a recessed cavity in a heat sink, where the portion of the ion source and the recessed cavity are each shaped so that expansion of the ion source causes high pressure thermal contact with the heat sink. For example, the ion source may have a tapered cylindrical end, which fits within a recessed cavity in the heat sink. Thermal expansion of the ion source causes the tapered cylindrical end to press against the recessed cavity in the heat sink. By proper selection of the temperature of the heat sink, the temperature and flow of coolant fluid through the heat sink, and the size of the gap between the heat sink and the ion source, the temperature of the ion source can be controlled.

Abstract: An ion source with improved temperature control is disclosed. A portion of the ion source is nestled within a recessed cavity in a heat sink, where the portion of the ion source and the recessed cavity are each shaped so that expansion of the ion source causes high pressure thermal contact with the heat sink. For example, the ion source may have a tapered cylindrical end, which fits within a recessed cavity in the heat sink. Thermal expansion of the ion source causes the tapered cylindrical end to press against the recessed cavity in the heat sink. By proper selection of the temperature of the heat sink, the temperature and flow of coolant fluid through the heat sink, and the size of the gap between the heat sink and the ion source, the temperature of the ion source can be controlled.

Abstract: An ion source with improved temperature control is disclosed. A portion of the ion source is nestled within a recessed cavity in a heat sink, where the portion of the ion source and the recessed cavity are each shaped so that expansion of the ion source causes high pressure thermal contact with the heat sink. For example, the ion source may have a tapered cylindrical end, which fits within a recessed cavity in the heat sink. Thermal expansion of the ion source causes the tapered cylindrical end to press against the recessed cavity in the heat sink. By proper selection of the temperature of the heat sink, the temperature and flow of coolant fluid through the heat sink, and the size of the gap between the heat sink and the ion source, the temperature of the ion source can be controlled.

Abstract: An ion source with improved temperature control is disclosed. A portion of the ion source is nestled within a recessed cavity in a heat sink, where the portion of the ion source and the recessed cavity are each shaped so that expansion of the ion source causes high pressure thermal contact with the heat sink. For example, the ion source may have a tapered cylindrical end, which fits within a recessed cavity in the heat sink. Thermal expansion of the ion source causes the tapered cylindrical end to press against the recessed cavity in the heat sink. By proper selection of the temperature of the heat sink, the temperature and flow of coolant fluid through the heat sink, and the size of the gap between the heat sink and the ion source, the temperature of the ion source can be controlled.

Abstract: A device for transferring articles between an atmospheric pressure environment and a vacuum environment includes a transfer housing having an atmospheric transfer port, a pumping port, a vacuum transfer port, and a venting port disposed in a circumferentially-spaced relationship. The vacuum transfer port is in communication with the vacuum environment and the atmospheric transfer port is in communication with the atmospheric pressure environment. The device can include a carrier disc rotatably disposed within the transfer housing, the carrier disc having a pocket formed in a sidewall thereof for holding an article. The device may further include an air bearing associated with the transfer housing and configured to expel gas to maintain a gap between the transfer housing and the carrier disc.

Abstract: A system and method for monitoring forces on a substrate lifting apparatus. The system includes a platen cartridge with a platen and a movable lifting portion. The movable lifting portion includes a plurality of lifting arms coupled to a plurality of lift pins. A plurality of force sensing elements are associated with respective ones of the plurality of lifting arms and the plurality of lift pins. A controller receives signals from the plurality of force sensing elements, correlates the signals to respective forces applied to said plurality of lift pins. The correlated forces may indicate to the controller that an error condition exists, such as a stuck wafer, a broken wafer, a mis-positioned wafer, or a mechanical malfunction.

Abstract: A device for transferring articles between an atmospheric pressure environment and a vacuum environment includes a transfer housing having an atmospheric transfer port, a pumping port, a vacuum transfer port, and a venting port disposed in a circumferentially-spaced relationship. The vacuum transfer port is in communication with the vacuum environment and the atmospheric transfer port is in communication with the atmospheric pressure environment. The device can include a carrier disc rotatably disposed within the transfer housing, the carrier disc having a pocket formed in a sidewall thereof for holding an article. The device may further include an air bearing associated with the transfer housing and configured to expel gas to maintain a gap between the transfer housing and the carrier disc.

Abstract: A system and method for monitoring forces on a substrate lifting apparatus. The system includes a platen cartridge with a platen and a movable lifting portion. The movable lifting portion includes a plurality of lifting arms coupled to a plurality of lift pins. A plurality of force sensing elements are associated with respective ones of the plurality of lifting arms and the plurality of lift pins. A controller receives signals from the plurality of force sensing elements, correlates the signals to respective forces applied to said plurality of lift pins. The correlated forces may indicate to the controller that an error condition exists, such as a stuck wafer, a broken wafer, a mis-positioned wafer, or a mechanical malfunction.

Abstract: Techniques for changing temperature of a platen are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for changing temperature of a platen comprising a platen and one or more movable thermal pads comprising one or more thermal fluid channels to carry a thermal fluid configured to affect a temperature of the platen.

Abstract: Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for high-temperature ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen having a wafer interface to provide a predetermined thermal contact between the wafer and the platen. The apparatus may also comprise an array of heating elements to heat the wafer while the wafer is held on the platen to achieve a predetermined temperature profile on the wafer during ion implantation, the heating elements being external to the platen. The apparatus may further comprise a post-implant cooling station to cool down the wafer after ion implantation of the wafer.

Abstract: Techniques for changing temperature of a platen are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for changing temperature of a platen comprising a platen and one or more movable thermal pads comprising one or more thermal fluid channels to carry a thermal fluid configured to affect a temperature of the platen.

Abstract: An apparatus and method of handling substrates is disclosed. A detecting system, capable of determining whether a substrate is tilted in relation to the platen, is positioned proximate to the substrate. In some embodiments, the detecting system is a distance measuring system. In other embodiments, it is an angle sensor. The detecting system is in communication with a controller, which, in turn, is in communication with a substrate handling robot. If, based on information received from the detecting system, the controller determines that the substrate is tilted beyond an acceptable range, it is assumed that the substrate has remained attached to the platen. In such a case, the substrate handling robot does not attempt to remove it from the platen. In this way, the substrate is not damaged.

Abstract: Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for high-temperature ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen having a wafer interface to provide a predetermined thermal contact between the wafer and the platen. The apparatus may also comprise an array of heating elements to heat the wafer while the wafer is held on the platen to achieve a predetermined temperature profile on the wafer during ion implantation, the heating elements being external to the platen. The apparatus may further comprise a post-implant cooling station to cool down the wafer after ion implantation of the wafer.

Abstract: A substrate heating apparatus having a housing forming a substrate receiving chamber and a heater located inside the chamber. The heater has a thin film flat ribbon heater element sandwiched between two glass-ceramic panels.

Abstract: A substrate heating apparatus having a housing forming a substrate receiving chamber and a heater located inside the chamber. The heater has a thin film flat ribbon heater element sandwiched between two glass-ceramic panels.

Abstract: A wafer position and clamp sensor. A circuit monitors capacitance between two electrodes within a wafer support. With no wafer on the support, the capacitance falls in one range, with the wafer in place but not clamped, the capacitance falls in a second range and with the wafer held in place by an electrostatic attraction the capacitance falls in a third range. The sensed capacitance is converted to a frequency and then a DC voltage level that can easily be sensed and used to confirm wafer placement and then confirm wafer clamping.

Abstract: Methods and apparatus for differential pumping of a thermal transfer gas used to transfer thermal energy between a semiconductor wafer and a platen during processing in a vacuum chamber. Housing structure defines an intermediate region adjacent to and surrounding the platen. The gas, which is introduced into a thermal transfer region behind the wafer, is restricted from flowing into the intermediate region by intimate contact between the wafer and the platen. A clamping ring, which clamps the wafer to the platen, and a bellows coupled between the clamping ring and the housing restrict flow of gas from the intermediate region to the vacuum chamber. The intermediate region is vacuum pumped to a pressure lower than the pressure in the thermal transfer region whereby leakage of the gas into the vacuum chamber is reduced.

Abstract: Conductive heat transfer between a thin deformable workpiece and heat sink is optimized by imposing a load over the workpiece resulting in a uniform contact pressure distribution in said workpiece which is also the maximum stress consistent with the elastic properties of the workpiece. The surface of the heat sink is given a contour determined by these criteria for a thin circular disk clamped thereto.

Abstract: Conductive heat transfer between a thin deformable workpiece and heat sink is optimized by imposing a load over the workpiece resulting in a uniform contact pressure distribution in said workpiece which is also the maximum stress consistent with the elastic properties of the workpiece. The surface of the heat sink is given a contour determined by these criteria for a thin circular disk clamped thereto.

Abstract: Apparatus and method are provided for effecting gas-assisted, solid-to-solid thermal transfer with a semiconductor wafer. A semiconductor wafer is loaded at its periphery onto a shaped platen. Sufficient contact pressure from the loading is produced between the wafer and the platen so that significant gas pressure may be accommodated against the back side of the wafer without having the wafer bow outwardly or break. Gas under pressure is introduced into the microscopic void region between the platen and the wafer. The gas fills the microscopic voids between the platen and semiconductor wafer. The gas pressure approaches that of the preloading contact pressure without any appreciable increase in the wafer-to-platen spacing. Since the gas pressure is significantly increased without any increase in the wafer-to-platen gap, the thermal resistance is reduced and solid-to-solid thermal transfer with gas assistance produces optimum results.