Patents by Inventor Scott C. Holden

Scott C. Holden has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4504194
    Abstract: Method and apparatus for high speed vacuum pumping of an air lock. A vacuum pumped expansion tank having a volume larger than the volume of the air lock is coupled through a valve to the air lock. When evacuation of the air lock is desired, the valve is opened for a brief duration and the gas in the air lock rapidly expands into the expansion tank. Multiple pumping stages, each including a vacuum pumped expansion tank coupled through a valve to the air lock, can be utilized to decrease the final pressure in the air lock. The valves are sequentially opened to permit sequential expansion of the gas in the air lock into the expansion tanks. Multiple air locks can time share the same pumping system.
    Type: Grant
    Filed: May 24, 1982
    Date of Patent: March 12, 1985
    Assignee: Varian Associates, Inc.
    Inventor: Scott C. Holden
  • Patent number: 4475045
    Abstract: Articles for irradiation are introduced from atmospheric pressure through a vacuum lock to a high vacuum environment for processing. The maintenance of low operating pressures while water vapor is released from the surfaces of the lock and the article is principally achieved by a separate pumping device operating in the high vacuum enclosure, which device preferably takes the form of a large cryo-panel. The cryo-panel can be electrically isolated from ground to provide a charge collection surface within a Faraday cage for ion implantation processing of the article.
    Type: Grant
    Filed: August 8, 1983
    Date of Patent: October 2, 1984
    Assignee: Varian Associates, Inc.
    Inventors: Scott C. Holden, Norman L. Turner
  • Patent number: 4458746
    Abstract: For enhanced heat conductive transfer from a semiconductor wafer during ion implantation, the wafer is clamped to a platen having a contour f(r,.theta.) computed to establish uniform contact pressure over said wafer for a number, n, of discrete clamping locii distributed along the periphery of the wafer. The available area of the wafer is thus maximized.
    Type: Grant
    Filed: May 25, 1982
    Date of Patent: July 10, 1984
    Assignee: Varian Associates, Inc.
    Inventors: Scott C. Holden, Peter R. Hanley
  • Patent number: 4457359
    Abstract: Apparatus and method are provided for effecting gas-assisted, solid-to-solid thermal transfer with a semiconductor wafer. A semiconductor wafer is loaded at its periphery onto a shaped platen. Sufficient contact pressure from the loading is produced between the wafer and the platen so that significant gas pressure may be accommodated against the back side of the wafer without having the wafer bow outwardly or break. Gas under pressure is introduced into the microscopic void region between the platen and the wafer. The gas fills the microscopic voids between the platen and semiconductor wafer. The gas pressure approaches that of the preloading contact pressure without any appreciable increase in the wafer-to-platen spacing. Since the gas pressure is significantly increased without any increase in the wafer-to-platen gap, the thermal resistance is reduced and solid-to-solid thermal transfer with gas assistance produces optimum results.
    Type: Grant
    Filed: May 25, 1982
    Date of Patent: July 3, 1984
    Assignee: Varian Associates, Inc.
    Inventor: Scott C. Holden