Abstract: A method of forming a glass electrochemical sensor is described. In some embodiments, the method may include forming a plurality of electrical through glass vias (TGVs) in an electrode substrate; filling each of the plurality of electrical TGVs with an electrode material; forming a plurality of contact TGVs in the electrode substrate; filling each of the plurality of contact TGVs with a conductive material; patterning the conductive material to connect the electrical TGVs with the contact TGVs; forming a cavity in a first glass layer; and bonding a first side of the first glass layer to the electrode substrate.

Abstract: A substrate including a via with a beveled overburden is disclosed. The substrate can include a substrate having a first surface, a second surface opposite the first surface, and a via passing from the first surface to the second surface. The via can be coated with a metallic layer that includes a first beveled overburden on the first surface, and the first beveled overburden can include a first outer edge that forms a first bevel angle greater than 95° with the first surface. The substrate can include a second beveled overburden that includes a second outer edge that forms a second bevel angle greater than 95° with the second surface. Methods of making the beveled overburdens are also disclosed.

Abstract: A backlight includes a substrate, a plurality of light sources, a reflective layer, a light guide plate, a pattern of light extractors, a plurality of patterned reflectors, and a diffusive layer. The plurality of light sources are proximate the substrate. The reflective layer is on the substrate. The light guide plate is proximate the plurality of light sources. The pattern of light extractors is on the light guide plate. The plurality of patterned reflectors are on the light guide plate. Each patterned reflector is aligned with a corresponding light source. The diffusive layer is on the light guide plate.

Abstract: A method of forming a glass electrochemical sensor is described. In some embodiments, the method may include forming a plurality of electrical through glass vias (TGVs) in an electrode substrate; filling each of the plurality of electrical TGVs with an electrode material; forming a plurality of contact TGVs in the electrode substrate; filling each of the plurality of contact TGVs with a conductive material; patterning the conductive material to connect the electrical TGVs with the contact TGVs; forming a cavity in a first glass layer; and bonding a first side of the first glass layer to the electrode substrate.

Abstract: An electronic package assembly includes a glass substrate including an upper glass cladding layer, a lower glass cladding layer, a glass core layer coupled to the upper glass cladding layer and the lower glass cladding layer, where the upper glass cladding layer and the lower glass cladding layer have a higher etch rate in an etchant than the glass core layer, a first cavity positioned within one of the upper glass cladding layer or the lower glass cladding layer, and a second cavity positioned within one of the upper glass cladding layer or the lower glass cladding layer, a microprocessor positioned within the first cavity, and a micro-electronic component positioned within the second cavity.

Abstract: A method of forming a glass electrochemical sensor is described. In some embodiments, the method may include forming a plurality of electrical through glass vias (TGVs) in an electrode substrate; filling each of the plurality of electrical TGVs with an electrode material; forming a plurality of contact TGVs in the electrode substrate; filling each of the plurality of contact TGVs with a conductive material; patterning the conductive material to connect the electrical TGVs with the contact TGVs; forming a cavity in a first glass layer; and bonding a first side of the first glass layer to the electrode substrate.

Abstract: According to various embodiments described herein, an article comprises a glass or glass-ceramic substrate having a first major surface and a second major surface opposite the first major surface, and a via extending through the substrate from the first major surface to the second major surface over an axial length in an axial direction. The article further comprises a helium hermetic adhesion layer disposed on the interior surface; and a metal connector disposed within the via, wherein the metal connector is adhered to the helium hermetic adhesion layer. The metal connector coats the interior surface of the via along the axial length of the via to define a first cavity from the first major surface to a first cavity length, the metal connector comprising a coating thickness of less than 12 ?m at the first major surface.

Abstract: A backlight includes a substrate, a plurality of light sources, a reflective layer, a light guide plate, a pattern of light extractors, a plurality of patterned reflectors, and a diffusive layer. The plurality of light sources are proximate the substrate. The reflective layer is on the substrate. The light guide plate is proximate the plurality of light sources. The pattern of light extractors is on the light guide plate. The plurality of patterned reflectors are on the light guide plate. Each patterned reflector is aligned with a corresponding light source. The diffusive layer is on the light guide plate.

Abstract: According to various embodiments described herein, an article comprises a glass or glass-ceramic substrate having a first major surface and a second major surface opposite the first major surface, and a via extending through the substrate from the first major surface to the second major surface over an axial length in an axial direction. The article further comprises a helium hermetic adhesion layer disposed on the interior surface; and a metal connector disposed within the via, wherein the metal connector is adhered to the helium hermetic adhesion layer. The metal connector coats the interior surface of the via along the axial length of the via to define a first cavity from the first major surface to a first cavity length, the metal connector comprising a coating thickness of less than 12 ?m at the first major surface.

Abstract: A method for metallizing through-glass vias in a glass substrate includes functionalizing a surface of the glass substrate with a silane. The glass substrate has an average thickness t and comprises a plurality of vias extending through the thickness t. The method further includes applying an electroless plating solution comprising a copper ion to deposit a copper seed layer on the functionalized surface, disposing an electrolyte within the plurality of vias, wherein the electrolyte comprises copper ions to be deposited on the copper seed layer within the plurality of vias; positioning an electrode within the electrolyte; and applying a current between the electrode and the glass substrate, thereby reducing the copper ions into copper within the plurality of vias such that each of the plurality of vias is filled with copper and the copper has a void volume fraction of less than 5%.

Abstract: According to various embodiments, an article including a glass or glass-ceramic substrate having a first major surface and a second major surface, and a via extending through the substrate from the first major surface to the second major surface over an axial length, L, the via defining a first axial portion, a third axial portion, and a second axial portion disposed between the first and third axial portions. The article further includes a helium hermetic adhesion layer disposed on the interior surface in the first and/or third axial portions and a metal connector disposed within the via, the metal connector being adhered to the helium hermetic adhesion layer. The metal connector fully fills the via over the axial length, L, the via has a maximum diameter, ?max, of less than or equal to 30 ?m, and the axial length, L, and the maximum diameter, ?max, satisfy an equation: L ? max > 20 ? ? micron 1 / 2 .

Abstract: An article includes a glass or glass-ceramic substrate having a first major surface and a second major surface opposite the first major surface, and at least one via extending through the substrate from the first major surface to the second major surface over an axial length in an axial dimension. The article also includes a metal connector disposed within the via that hermetically seals the via. The article has a helium hermeticity of less than or equal to 1.0×10?8 atm-cc/s after 1000 thermal shock cycles, each of the thermal shock cycle comprises cooling the article to a temperature of ?40° C. and heating the article to a temperature of 125° C., and the article has a helium hermeticity of less than or equal to 1.0×10?8 atm-cc/s after 100 hours of HAST at a temperature of 130° C. and a relative humidity of 85%.

Abstract: Disclosed herein is a bottom-up electrolytic via plating method wherein a first carrier substrate and a second substrate having at least one through-via are temporarily bonded together. The method includes applying a seed layer on a surface of the first substrate, forming a surface modification layer on the seed layer or the second substrate, bonding the second substrate to the first substrate with the surface modification layer to create an assembly wherein the seed layer and the surface modification layer are disposed between the first and second substrates, applying conductive material to the through-via, removing the second substrate having the through-via containing conductive material from the assembly.

Abstract: An electronic package assembly includes a glass substrate including an upper glass cladding layer, a lower glass cladding layer, a glass core layer coupled to the upper glass cladding layer and the lower glass cladding layer, where the upper glass cladding layer and the lower glass cladding layer have a higher etch rate in an etchant than the glass core layer, a first cavity positioned within one of the upper glass cladding layer or the lower glass cladding layer, and a second cavity positioned within one of the upper glass cladding layer or the lower glass cladding layer, a microprocessor positioned within the first cavity, and a micro-electronic component positioned within the second cavity.

Abstract: According to various embodiments, an article including a glass or glass-ceramic substrate having a first major surface and a second major surface, and a via extending through the substrate from the first major surface to the second major surface over an axial length, L, the via defining a first axial portion, a third axial portion, and a second axial portion disposed between the first and third axial portions. The article further includes a helium hermetic adhesion layer disposed on the interior surface in the first and/or third axial portions and a metal connector disposed within the via, the metal connector being adhered to the helium hermetic adhesion layer. The metal connector fully fills the via over the axial length, L, the via has a maximum diameter, ?max, of less than or equal to 30 ?m, and the axial length, L, and the maximum diameter, ?max, satisfy an equation: L ? max > 20 ? ? micron 1 / 2 .

Abstract: A method of forming a glass electrochemical sensor is described. In some embodiments, the method may include forming a plurality of electrical through glass vias (TGVs) in an electrode substrate; filling each of the plurality of electrical TGVs with an electrode material; forming a plurality of contact TGVs in the electrode substrate; filling each of the plurality of contact TGVs with a conductive material; patterning the conductive material to connect the electrical TGVs with the contact TGVs; forming a cavity in a first glass layer; and bonding a first side of the first glass layer to the electrode substrate.

Abstract: According to various embodiments described herein, an article comprises a glass or glass-ceramic substrate having a first major surface and a second major surface opposite the first major surface, and a via extending through the substrate from the first major surface to the second major surface over an axial length in an axial direction. The article further comprises a helium hermetic adhesion layer disposed on the interior surface; and a metal connector disposed within the via, wherein the metal connector is adhered to the helium hermetic adhesion layer. The metal connector coats the interior surface of the via along the axial length of the via to define a first cavity from the first major surface to a first cavity length, the metal connector comprising a coating thickness of less than 12 ?m at the first major surface.

Abstract: The optical-electrical interconnection device comprises a glass support member with front-end and back-end portions that define a plane and an aperture. A cantilever member extends from the back-end portion into the aperture. The cantilever member supports an interconnection optical waveguide. The cantilever member comprises a bend region that causes a front-end section of the cantilever member to extend out of the plane. The front-end section is flexible, which allows for the interconnection optical waveguide to be aligned and optically coupled to a device waveguide of an optical-electrical device. A photonic assembly is formed using the optical-electrical interconnection device and at least one optical-electrical device. Methods of forming optical and electrical interconnections using the optical-electrical interconnection device are also disclosed.

Abstract: Electronics packages that incorporate components such as glass-based interposer assemblies are disclosed, as well as methods of forming thereof. A method includes bonding a glass-based substrate to a carrier, applying a metallization layer and/or a dielectric layer over the glass-based substrate to obtain a layered structure bonded to the carrier, removing sections of the layered structure such that portions of the layered structure remain on the carrier with a space between each thereof, attaching one or more dies to the portions, dispensing an underfill material between the glass-based substrate and the dies to obtain assemblies bonded to the carrier, encapsulating the assemblies with a polymeric material to obtain encapsulated assemblies, removing the carrier from the encapsulated assemblies to expose a back side of the encapsulated assemblies, and applying second metallization layers and second dielectric layers over the back side of the encapsulated assemblies to form the glass-based structures.

Abstract: An article includes a glass or glass-ceramic substrate having a first major surface and a second major surface opposite the first major surface, and at least one via extending through the substrate from the first major surface to the second major surface over an axial length in an axial dimension. The article also includes a metal connector disposed within the via that hermetically seals the via. The article has a helium hermeticity of less than or equal to 1.0×10?8 atm-cc/s after 1000 thermal shock cycles, each of the thermal shock cycle comprises cooling the article to a temperature of ?40° C. and heating the article to a temperature of 125° C., and the article has a helium hermeticity of less than or equal to 1.0×10?8 atm-cc/s after 100 hours of HAST at a temperature of 130° C. and a relative humidity of 85%.