Patents by Inventor Scott Jeffrey

Scott Jeffrey has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7553816
    Abstract: Compounds of the formulas LAn-Z-X—WwD and BZ-X—WwD wherein: D is a drug moiety; L is a ligand; B is a blocking group; A is an optional acyl unit; Z is an amino acid or a peptide; X is an aminobenzyl ether self-immolative spacer group; W is an optional second self-immolative group; n is an integer of 0 or 1; and w is an integer of 0 or 1, and compositions of said compounds with pharmaceutically acceptable carrier, diluent and/or excipient, and methods of delivery the drug D via the compounds.
    Type: Grant
    Filed: September 23, 2002
    Date of Patent: June 30, 2009
    Assignee: Seattle Genetics, Inc.
    Inventors: Peter D. Senter, Brian E. Toki, Scott Jeffrey
  • Publication number: 20090111756
    Abstract: Auristatin peptide analogs of MeVal-Val-Dil-Dap-Phe (MMAF) having a carboxylic acid equivalent at the C-terminal phenylalanine were prepared and attached to ligands through various linkers, including maleimidocaproyl-val-cit-PAB. The resulting ligand drug conjugates were active in vitro and in vivo.
    Type: Application
    Filed: July 7, 2006
    Publication date: April 30, 2009
    Applicant: Seattle Genectics, Inc.
    Inventors: Svetlana O. Doronina, Toni Beth Kline, Scott Jeffrey, Peter D. Senter, Damon Meyer
  • Patent number: 7500397
    Abstract: A method for restoring a dielectric constant of a layer of a silicon-containing dielectric material having a first dielectric constant and at least one surface, wherein the first dielectric constant of the layer of silicon-containing dielectric material has increased to a second dielectric constant, the method comprising the steps of: contacting the at least one surface of the layer of silicon-containing dielectric material with a silicon-containing fluid; and exposing the at least one surface of the layer of silicon-containing dielectric material to an energy source selected from the group consisting of: UV radiation, heat, and an electron beam, wherein the layer of silicon-containing dielectric material has a third dielectric constant that is lower than the second dielectric constant after exposing the layer of silicon-containing dielectric material to the energy source.
    Type: Grant
    Filed: January 31, 2008
    Date of Patent: March 10, 2009
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Scott Jeffrey Weigel, Mark Leonard O'Neill, Raymond Nicholas Vrtis, Dino Sinatore
  • Patent number: 7482676
    Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.
    Type: Grant
    Filed: July 11, 2006
    Date of Patent: January 27, 2009
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Brian Keith Peterson, John Francis Kirner, Scott Jeffrey Weigel, James Edward MacDougall, Lisa Deis, Thomas Albert Braymer, Keith Douglas Campbell, Martin Devenney, C. Eric Ramberg, Konstantinos Chondroudis, Keith Cendak
  • Publication number: 20090004605
    Abstract: The invention includes a semiconductor processing method. A first material comprising silicon and nitrogen is formed. A second material is formed over the first material, and the second material comprises silicon and less nitrogen, by atom percent, than the first material. An imagable material is formed on the second material, and patterned. A pattern is then transferred from the patterned imagable material to the first and second materials. The invention also includes a structure comprising a first layer of silicon nitride over a substrate, and a second layer on the first layer. The second layer comprises silicon and is free of nitrogen. The structure further comprises a third layer consisting essentially of imagable material on the second layer.
    Type: Application
    Filed: September 10, 2008
    Publication date: January 1, 2009
    Inventors: Scott Jeffrey DeBoer, John T. Moore
  • Patent number: 7446055
    Abstract: This invention relates to an improvement in a deposition process for producing low dielectric films having a dielectric constant of 3, preferably <2.7 and lower. The process comprises the steps: (a) forming a liquid precursor solution comprised of an organosilicon source containing both Si—O and Si—C bonds and solvent; (b) generating a liquid mist of said liquid precursor solution, said mist existing as precursor solution droplets having a number average droplet diameter size of less than 0.5 ?m; (c) preferably electrically charging the liquid mist of said liquid precursor solution droplets; (d) depositing liquid mist of said liquid precursor solution droplets onto a substrate; and, (e) converting the thus deposited liquid mist of said liquid precursor solution droplets to a solid, low dielectric film.
    Type: Grant
    Filed: March 17, 2005
    Date of Patent: November 4, 2008
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Scott Jeffrey Weigel, Jean Louise Vincent, Sarah Kathryn Coulter, James Edward MacDougall
  • Publication number: 20080264672
    Abstract: A process for preparing a photoimprinted film, a composition for forming a photoimprinted film and a photoimprinted film comprising a dielectric constant of less than about 3.5. The method includes providing a material film having a composition including at least one silica source capable of being sol-gel processed, at least one photoactive compound and at least one solvent; and water. The composition contains less than about 0.1% by weight of an added acid. A mold having mold features is provided. The mold is positioned in sufficient contact with the material film to allow the material to contact at least a portion of the mold features. The material film is then exposed to a radiation source and the film is cured to form a solidified material film. The mold is separated from the solidified material, wherein the material includes film features corresponding to the mold features.
    Type: Application
    Filed: April 26, 2007
    Publication date: October 30, 2008
    Applicant: AIR PRODUCTS AND CHEMICALS, INC.
    Inventors: Thomas John Markley, Scott Jeffrey Weigel, Christine Peck Kretz
  • Patent number: 7442232
    Abstract: Adsorbents and methods of use thereof are provided. One representative, among others, includes an adsorbent having an alkali metal promoted, mixed trivalent layered double hydroxide (LDH) composition. When the mixed trivalent layered double hydroxide (LDH) composition is heated to a temperature ranging from about 300° C. to 450° C., an the adsorbent having an adsorption capacity of at least 0.8 millimoles of CO2 adsorbed per gram of adsorbent is formed.
    Type: Grant
    Filed: June 19, 2003
    Date of Patent: October 28, 2008
    Assignee: Georgia Tech Research Corporation
    Inventors: Mark G. White, Alexei V Iretski, Scott Jeffrey Weigel, Robert Ling Chiang, Jeffrey Richard Brzozowski
  • Patent number: 7435688
    Abstract: The invention includes a semiconductor processing method. A first material comprising silicon and nitrogen is formed. A second material is formed over the first material, and the second material comprises silicon and less nitrogen, by atom percent, than the first material. An imagable material is formed on the second material, and patterned. A pattern is then transferred from the patterned imagable material to the first and second materials. The invention also includes a structure comprising a first layer of silicon nitride over a substrate, and a second layer on the first layer. The second layer comprises silicon and is free of nitrogen. The structure further comprises a third layer consisting essentially of imagable material on the second layer.
    Type: Grant
    Filed: May 30, 2002
    Date of Patent: October 14, 2008
    Assignee: Micron Technology, Inc.
    Inventors: Scott Jeffrey DeBoer, John T. Moore
  • Publication number: 20080241128
    Abstract: Ligand Drug conjugate compounds comprising a ?-glucuronide-based linker and methods of using such compounds are provided.
    Type: Application
    Filed: July 18, 2006
    Publication date: October 2, 2008
    Applicant: Seattle Genetics, Inc.
    Inventor: Scott Jeffrey
  • Publication number: 20080240419
    Abstract: An apparatus, system, and method are disclosed for testing data compression and data encryption circuitry. A pattern configuration module generates initial pattern parameters. Holding registers store the initial pattern parameters. A pattern generation module generates patterns for compression/encryption logic. A detection module detects a failure of the compression/encryption logic. The failure of the compression/encryption logic may be a cyclic redundancy check failure of a decompression module and/or a message authentication code failure of a decryption module.
    Type: Application
    Filed: March 30, 2007
    Publication date: October 2, 2008
    Inventors: Melanie Jean Sandberg, Scott Jeffrey Schaffer
  • Patent number: 7421885
    Abstract: A method and apparatus for determining pore size distribution and/or the presence of at least one killer pore in at least a portion of a porous film deposited upon a substrate are disclosed herein. In one embodiment, there is provided a method for determining pore size distribution comprising: providing the substrate having the film deposited thereupon wherein the film comprises pores and wherein the pores have a first volume; exposing the film to an adsorbate at a temperature and a pressure sufficient to provide condensation of the adsorbate in pores and wherein the pores after the exposing step have a second volume; and measuring the difference between the first and the second volume using a volumetric technique; and calculating the pore size and pore volume using the change in the first and the second volume, the pressure, and a model that relates pressure to pore diameter.
    Type: Grant
    Filed: June 28, 2005
    Date of Patent: September 9, 2008
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Ronald Joseph Kitzhoffer, Scott Jeffrey Weigel, Charles Gardner Coe, Michael Francis Kimak, James Edward MacDougall, John Francis Kirner
  • Publication number: 20080205635
    Abstract: An apparatus, system, and method are disclosed for self-describing, heterogeneous magnetic tape formatting. A detection module determines if data is to be encrypted when written to a magnetic tape in response to a host command and if the data is already encrypted. An encryption module encrypts the data if the data is to be encrypted and if the data is not already encrypted. A write module writes a reserved codeword followed by the data to the magnetic tape wherein the reserved codeword is configured as an encryption reserved codeword if the data is encrypted. If the data is not encrypted, the reserved codeword is configured as a clear reserved codeword. The encrypted and unencrypted data segments are intermixed on the magnetic tape.
    Type: Application
    Filed: February 27, 2007
    Publication date: August 28, 2008
    Inventors: Glen Alan Jaquette, Scott Jeffrey Schaffer, Toshiyuki Shiratori
  • Publication number: 20080199977
    Abstract: A method for restoring a dielectric constant of a layer of a silicon-containing dielectric material having a first dielectric constant and at least one surface, wherein the first dielectric constant of the layer of silicon-containing dielectric material has increased to a second dielectric constant, the method comprising the steps of: contacting the at least one surface of the layer of silicon-containing dielectric material with a silicon-containing fluid; and exposing the at least one surface of the layer of silicon-containing dielectric material to an energy source selected from the group consisting of: UV radiation, heat, and an electron beam, wherein the layer of silicon-containing dielectric material has a third dielectric constant that is lower than the second dielectric constant after exposing the layer of silicon-containing dielectric material to the energy source.
    Type: Application
    Filed: January 31, 2008
    Publication date: August 21, 2008
    Applicant: Air Products and Chemicals, Inc.
    Inventors: Scott Jeffrey Weigel, Mark Leonard O'Neill, Raymond Nicholas Vrtis, Dino Sinatore
  • Publication number: 20080069343
    Abstract: Provided are a method, system and article of manufacture, wherein a cryptographic key generator generates a cryptographic key. The cryptographic key generator encrypts the cryptographic key with a session key that is available to both the cryptographic key generator and a cryptographic unit. The encrypted cryptographic key is transmitted across a link from the cryptographic key generator to the cryptographic unit.
    Type: Application
    Filed: September 7, 2006
    Publication date: March 20, 2008
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Paul Merrill Greco, Melanie Jean Sandberg, Scott Jeffrey Schaffer
  • Publication number: 20080063183
    Abstract: Provided are a method, system, and article of manufacture, wherein a first write only register is maintained in an encryption engine of a cryptographic unit. A second write only register is maintained in a decryption engine of the cryptographic unit. A cryptographic key is written in the first write only register and the second write only register, wherein the cryptographic key is inaccessible for reading from any entity that is external to the cryptographic unit.
    Type: Application
    Filed: September 7, 2006
    Publication date: March 13, 2008
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Paul Merrill Greco, Melanie Jean Sandberg, Scott Jeffrey Schaffer
  • Publication number: 20080063186
    Abstract: Provided are a method, system, and article of manufacture that maintains, at a decryption unit, and expected key identifier and an expected initialization vector. A key identifier and an initialization vector are received at the decryption unit, wherein a plurality of encrypted data records are preceded by the key identifier and the initialization vector in a data stream, and wherein the plurality of encrypted data records have been encrypted with a cryptographic key that is recoverable by the decryption unit from the key identifier. An initiation is made of the reading of the plurality of encrypted data records of the data stream, in response to determining at the decryption unit that the received key identifier matches the expected key identifier. Certain embodiments are implemented in a storage library, comprising at least one storage drive, and at least one decryption unit included in the at least one storage drive, wherein in certain embodiments the storage library is a tape library.
    Type: Application
    Filed: September 7, 2006
    Publication date: March 13, 2008
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Paul Merrill Greco, Melanie Jean Sandberg, Scott Jeffrey Schaffer
  • Publication number: 20080059260
    Abstract: A method and apparatus for a software tool that interfaces with a Field Operations software tool and incorporates Voter Score, Voter Scorecard, Post-Election Voter History, Household Visualization, Voter Support Visualization, Household Mailing Labels, E-Mail Voter Footer, and Voter List of Friends and Family.
    Type: Application
    Filed: August 9, 2007
    Publication date: March 6, 2008
    Inventor: Scott Jeffrey
  • Patent number: 7307343
    Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. These materials are characterized as having a dielectric constant (?) a dielectric constant of about 3.7 or less; a normalized wall elastic modulus (E0?), derived in part from the dielectric constant of the material, of about 15 GPa or greater; and a metal impurity level of about 500 ppm or less. Low dielectric materials are also disclosed having a dielectric constant of less than about 1.95 and a normalized wall elastic modulus (E0?), derived in part from the dielectric constant of the material, of greater than about 26 GPa.
    Type: Grant
    Filed: May 30, 2002
    Date of Patent: December 11, 2007
    Assignee: Air Products and Chemicals, Inc.
    Inventors: John Francis Kirner, James Edward MacDougall, Brian Keith Peterson, Scott Jeffrey Weigel, Thomas Alan Deis, Martin Devenney, C. Eric Ramberg, Konstantinos Chondroudis, Keith Cendak
  • Patent number: 7294585
    Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.
    Type: Grant
    Filed: July 11, 2006
    Date of Patent: November 13, 2007
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Brian Keith Peterson, John Francis Kirner, Scott Jeffrey Weigel, James Edward MacDougall, Lisa Deis, legal representative, Thomas Albert Braymer, Keith Douglas Campbell, Martin Devenney, C. Eric Ramberg, Konstantinos Chondroudis, Keith Cendak, Thomas Alan Deis, deceased