Patents by Inventor Scott Kern

Scott Kern has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thickness tailoring of wafer bonded AlxGayInzN structures by laser melting
    Patent number: 6280523
    Abstract: Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.
    Type: Grant
    Filed: February 5, 1999
    Date of Patent: August 28, 2001
    Assignee: LumiLeds Lighting, U.S., LLC
    Inventors: Carrie Carter Coman, Fred A. Kish, Jr., R. Scott Kern, Michael R. Krames, Paul S. Martin
  • Method of strain engineering and impurity control in III-V nitride semiconductor films and optoelectronic devices
    Patent number: 6274399
    Abstract: In the present invention, an interfacial layer is added to a light-emitting diode or laser diode structure to perform the role of strain engineering and impurity gettering. A layer of GaN or AlxInyGa1−x−yN (0≦x≦1, 0≦y≦1) doped with Mg, Zn, Cd can be used for this layer. Alternatively, when using AlxInyGa1−x−yN (x>0), the layer may be undoped. The interfacial layer is deposited directly on top of the buffer layer prior to the growth of the n-type (GaN:Si) layer and the remainder of the device structure. The thickness of the interface layer varies from 0.01-10.0 &mgr;m.
    Type: Grant
    Filed: September 6, 2000
    Date of Patent: August 14, 2001
    Assignee: LumiLeds Lighting, U.S. LLC
    Inventors: R. Scott Kern, Changhua Chen, Werner Goetz, Chihping Kuo
  • Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices
    Patent number: 6194742
    Abstract: In the present invention, an interfacial layer is added to a light-emitting diode or laser diode structure to perform the role of strain engineering and impurity gettering. A layer of GaN or AlxInyGal1-x-yN (0≦x≦1, 0≦y≦1) doped with Mg, Zn, Cd can be used for this layer. Alternatively, when using AlxInyGa1-x-yN (x>0), the layer may be undoped. The interfacial layer is deposited directly on top of the buffer layer prior to the growth of the n-type (GaN:Si) layer and the remainder of the device structure. The thickness of the interfacial layer varies from 0.01-10.0 &mgr;m.
    Type: Grant
    Filed: June 5, 1998
    Date of Patent: February 27, 2001
    Assignee: LumiLeds Lighting, U.S., LLC
    Inventors: R. Scott Kern, Changhua Chen, Werner Goetz, Chihping Kuo
  • Buried reflectors for light emitters in epitaxial material and method for producing same
    Patent number: 6046465
    Abstract: A buried reflector 50 in an epitaxial lateral growth layer forms a part of a light emitting device and allows for the fabrication of a semiconductor material that is substantially low in dislocation density. The laterally grown material is low in dislocation defect density where it is grown over the buried reflector making it suitable for high quality optical light emitting devices, and the embedded reflector eliminates the need for developing an additional reflector.
    Type: Grant
    Filed: April 17, 1998
    Date of Patent: April 4, 2000
    Assignee: Hewlett-Packard Company
    Inventors: Shih-Yuan Wang, Yong Chen, Scott W. Corzine, R. Scott Kern, Carrie C. Coman, Michael R. Krames, Frederick A. Kish, Jr., Yawara Kaneko