Abstract: Gallium nitride (GaN) based semiconductor devices and methods of manufacturing the same. The GaN-based semiconductor device may include a heat dissipation substrate (that is, a thermal conductive substrate); a GaN-based multi-layer arranged on the heat dissipation substrate and having N-face polarity; and a heterostructure field effect transistor (HFET) or a Schottky electrode arranged on the GaN-based multi-layer. The HFET device may include a gate having a double recess structure. While such a GaN-based semiconductor device is being manufactured, a wafer bonding process and a laser lift-off process may be used.

Abstract: Discussed is a display device integrated with touch screen. The display device includes a plurality of touch groups into which a plurality of touch electrodes are physically divided, a plurality of first driving electrode lines connected to a plurality of driving electrodes of a first touch group of the touch groups, a plurality of second driving electrode lines connected to a plurality of driving electrodes of a second touch group of the touch groups, a plurality of first receiving electrode lines connected to a plurality of receiving electrodes of the first touch group, a plurality of second receiving electrode lines connected to a plurality of receiving electrodes of the second touch group, a touch driving IC configured to supply a touch driving signal to the first and second driving electrode lines, and a touch sensing IC configured to sense touch signals of the first and second receiving electrode lines.

Abstract: Disclosed herein are an apparatus and a method of generating a language model for speech recognition. The present invention is to provide an apparatus of generating a language model capable of improving speech recognition performance by predicting a position at which break is present and reflecting the predicted break information.

Abstract: Disclosed is a display device integrated with a touch screen. The display device includes a panel configured to include a plurality of first electrodes arranged in parallel in a first direction and a plurality of second electrodes arranged in parallel in a second direction, a switching unit configured to apply a common voltage to the plurality of first and second electrodes when the panel operates in a display driving mode, and when the panel operates in a touch driving mode, apply a first touch scan pulse to the plurality of first electrodes during a first period, and apply a second touch scan pulse to the plurality of first and second electrodes during a second period, a first touch sensing unit configured to apply the first touch scan pulse to the switching unit, and a second touch sensing unit configured to apply the second touch scan pulse to the switching unit.

Abstract: Gallium nitride (GaN) based semiconductor devices and methods of manufacturing the same. The GaN-based semiconductor device may include a heterostructure field effect transistor (HFET) or a Schottky diode, arranged on a heat dissipation substrate. The HFET device may include a GaN-based multi-layer having a recess region; a gate arranged in the recess region; and a source and a drain that are arranged on portions of the GaN-based multi-layer at two opposite sides of the gate (or the recess region). The gate, the source, and the drain may be attached to the heat dissipation substrate. The recess region may have a double recess structure. While such a GaN-based semiconductor device is being manufactured, a wafer bonding process and a laser lift-off process may be used.

Abstract: A high efficiency HFET may include a substrate, a semi-insulating gallium nitride (GaN) layer formed on the substrate, an aluminum gallium nitride (AlGaN) layer formed on the GaN layer, and a silicon carbide (SixC1-x) functional layer formed on the AlGaN layer.

Abstract: A touch panel includes a plurality of first electrode patterns being serially connected by a plurality of first connection patterns; a plurality of second electode patterns being serially connected by a plurality of second connection patterns; and a plurality of routing lines; wherein at least two of the plurality of first electrode patterns are connected to at least one of the plurality of routing lines.

Abstract: Disclosed is a toothpick which enables a user to effectively remove foreign matters between teeth, to easily remove plaque or scale from a tooth, and to simply carry the toothpick, so that the user can more improve the health of teeth. The toothpick includes a body, a bending part provided at one end of the body and having a shape sharpened toward an end thereof such that at least a portion of the bending part is inserted between teeth, and an unevenness part provided at an opposite end of the body, having a flat shape, having at least a portion inserted between the teeth, and having a plurality of protrusions formed on a surface thereof to remove at least one of plaque and scale from a tooth. The bending part has a bent shape to remove foreign matters between the teeth inside an oral cavity through the bent shape.

Abstract: An optical assembly includes a plurality of light sources emitting light in a first direction at a predetermined orientation angle, and a light guide panel having a light incident section and a light emitting section. The light incident section has a first surface to receive the light emitted from the light sources in the first direction and the light emitting section is to emit light received from the light incident section in a second direction. Also included is at least one cover having a first surface adjacent the light sources and a second surface adjacent at least one portion of the light emitting section.

Abstract: Disclosed is a shift register capable of stably generating an output even when the threadhold voltage of a pull-down switching element is raised due to degradation of the pull-down switching element. The shift register includes a plurality of stages each comprising a node controller comprising an inverter to control a voltage at a reset node in accordance with a voltage at a set node, and an output unit to output a scan pulse based on at least one of the voltage at the set node and the voltage at the reset node. The shift register further includes an inverter voltage controller for controlling a high-level inverter voltage supplied to each inverter of the stages based on the voltage at at least one reset node in at least one of the stages.

Abstract: Disclosed is a liquid crystal display device which can sense a change of static capacitance of liquid crystals caused by a touch to detect the touch and a position of the touch, the liquid crystal display device includes, a pixel transistor on each of crossed portions of gate lines and data lines and a pixel electrode at each of the pixel regions, a liquid crystal capacitor between the pixel electrode and a common electrode, a storage line formed on the first substrate, a switching line formed in parallel to the gate line, a read out line parallel to the data line, a first storage capacitor between the storage line and the pixel transistor, a second storage capacitor and a sensing capacitor in series between the switching line and the common electrode, a switching transistor having a gate electrode connected to a contact point of the second storage capacitor and the sensing capacitor, and a drain electrode connected to the read out line.