Abstract: Inspection methods. A method includes adhering an optical blocking layer directly onto and in direct mechanical contact with a semiconductor process wafer, the blocking layer being substantially opaque to a range of wavelengths of light; applying at least one layer over the blocking layer; and inspecting optically at least one wavelength at least one inspection area, the blocking layer extending substantially throughout the inspection area. An inspection method including adhering an optical absorbing layer to a semiconductor process wafer, where the absorbing layer is configured to substantially absorb a range of wavelengths of light; applying at least one layer over the absorbing layer; and inspecting optically at least one wavelength at least one inspection area of the process wafer. A manufacturing method including ascertaining if a defect is present within a photoresist layer, and changing a semiconductor manufacturing process to prevent the defect, if the defect is present.

Abstract: Inspection methods. A method includes adhering an optical blocking layer directly onto and in direct mechanical contact with a semiconductor process wafer, the blocking layer being substantially opaque to a range of wavelengths of light; applying at least one layer over the blocking layer; and inspecting optically at least one wavelength at least one inspection area, the blocking layer extending substantially throughout the inspection area. An inspection method including adhering an optical absorbing layer to a semiconductor process wafer, where the absorbing layer is configured to substantially absorb a range of wavelengths of light; applying at least one layer over the absorbing layer; and inspecting optically at least one wavelength at least one inspection area of the process wafer. A manufacturing method including ascertaining if a defect is present within a photoresist layer, and changing a semiconductor manufacturing process to prevent the defect, if the defect is present.

Abstract: Inspection methods. A method includes adhering an optical blocking layer directly onto and in direct mechanical contact with a semiconductor process wafer, the blocking layer being substantially opaque to a range of wavelengths of light; applying at least one layer over the blocking layer; and inspecting optically at least one wavelength at least one inspection area, the blocking layer extending substantially throughout the inspection area. An inspection method including adhering an optical absorbing layer to a semiconductor process wafer, where the absorbing layer is configured to substantially absorb a range of wavelengths of light; applying at least one layer over the absorbing layer; and inspecting optically at least one wavelength at least one inspection area of the process wafer. A manufacturing method including ascertaining if a defect is present within a photoresist layer, and changing a semiconductor manufacturing process to prevent the defect, if the defect is present.

Abstract: According to one aspect, a nuclear magnetic resonance (NMR) radio-frequency (RF) coil of an NMR spectrometer includes oppositely-facing arches at opposite longitudinal ends of the coil window, along shielded regions of the coil. The arched coil shapes allow situating the transverse parts of the coil away from the interfaces between the sample measurement volume and coil shields while minimizing the additional coil length and thus coil inductance and capacitance needed to move the transverse conductors away from interfaces. Moving the transverse parts of the coil away from the measurement volume facilitates shimming. The coil may be lifted on a plurality of longitudinal support rods spaced around a circumference of the coil, in order to reduce the capacitance between the coil and associated shields.

Abstract: According to some embodiments, low-temperature (cryogenic) nuclear magnetic resonance (NMR) probe fixed capacitors include thermally-conductive dielectric layers serving to thermally connect the capacitors to a cryogenic heat sink. For example, a sapphire layer may be metalized on opposite sides to form copper capacitor plates, and along an edge to form a copper heat sink contact. Heat generated by RF currents during an operation of an NMR circuit including such a capacitor is discharged through the thermally-conductive dielectric to the heat sink. Cooling cold-probe circuit components such as capacitors through thermally-conductive capacitor dielectrics allows reducing perturbations introduced into the circuit by components such as heat sinks.

Abstract: Disclosed is a topcoat composition comprising a polymer having a dissolution rate of at least 1500 ?/second in an aqueous alkaline developer, and at least one solvent. The topcoat composition can be used to coat a photoresist layer on a material layer on a substrate, for example, a semiconductor chip. Also disclosed is a method of forming a pattern in the material layer of the coated substrate.

Abstract: A chimney cap includes an intake pipe extension and an exhaust pipe extension; each extension includes an opening, the exhaust opening being disposed above the intake opening. The cap further includes solid sidewalls surrounding the intake opening and a diffusion plate disposed over the intake opening and below the exhaust opening.

Abstract: A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements selected from the group consisting of O, N, S and F; and a photoresist material disposed on the RCHX material. The invention is also directed to methods of making the lithographic structure, and using the structure to pattern a substrate.

Abstract: A gas generating composition of the present invention contains at least one fuel selected from amides, imides, and metal amine-based fuels, ammonium nitrate or phase stabilized ammonium nitrate, and at least one metal oxide. A gas generating system 200 containing a-gas generant in accordance with the present invention is also contemplated.

Abstract: A gas generator 10 includes an autoignition composition that contains an alkali metal chlorate such as potassium chlorate as an oxidizer, a carboxylic acid such as DL-tartaric acid as a fuel, and a desiccant in operable communication therewith. Gas generating systems 180 such as vehicle occupant protection systems 180, containing the gas generator 10, are also provided.

Abstract: Gas generant compositions contain the mono-ammonium salt of bis (1(2) H-tetrazol-5-yl)-amine, an oxidizer such as phase stabilized ammonium nitrate, and a first additive selected from fumed oxides such as fumed silica. Gas generators 10 and gas generating systems 200 incorporating the compositions are also contemplated.

Abstract: The present invention includes a gas generator 10 that incorporates a gas generating composition 12 and a scavenging additive 16 in heterogeneous but vapor/gaseous communication with the gas generating composition 12. The scavenging additive retains moisture/contaminants typically evolving over time at relatively higher temperatures. The present invention further includes a gas generating system 180 incorporating the gas generator 10.

Abstract: An autoignition composition 14 is provided to manage the safe combustion of a primary gas generant composition 12. The autoignition composition 14 contains carboxylic acid and potassium chlorate. A method of managing the safe combustion of the primary gas generant composition 12 is also provided.

Abstract: An antireflective composition and a lithographic structure comprising a silicon-metal oxide, antireflective material derived from the composition. The antireflective composition comprises a polymer of formula I, wherein 1?x?2; 1?y?5; 1?0; m>0; n>0; R is a chromophore, M is a metal selected from Group IIIB to Group VIB, lanthanides, Group IIIA, Group IVA except silicon; and L is an optional ligand. The invention is also directed to a process of making a lithographic structure including a silicon-metal oxide, antireflective material.

Abstract: A lithographic structure comprising: an organic antireflective material disposed on a substrate; and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a transparent organic group that is substantially transparent to 193 nm or 157 nm radiation. In combination, the organic antireflective material and the silicon antireflective material provide an antireflective material suitable for deep ultraviolet lithography. The invention is also directed to a process of making the lithographic structure.

Abstract: In accordance with the present invention, a flexible gas generator (10) is provided which includes a first flexible housing (14) defining an interior, the first housing (14) having an exterior surface. A first flexible, porous covering (15) is positioned in contact with substantially the entire exterior surface of the first housing (14). The first housing (14) and covering (15) are positioned within a second flexible housing (12). The first (14) and second (12) housings may be formed from polymeric or metallic tubing. A second flexible, porous covering (19) may be positioned to cover substantially the entire exterior surface of the second housing (12). The flexible first covering (15) may comprise multiple layers of, for example, a braided or a mesh material. The flexible coverings (15, 19) provide structural support for the housings (12, 14) while cooling and filtering the generated gases.

Abstract: A new underlayer composition that exhibits high etch resistance and improved optical properties is disclosed. The underlayer composition comprises a vinyl or acrylate polymer, such as a methacrylate polymer, the polymer comprising at least one substituted or unsubstituted naphthalene or naphthol moiety, including mixtures thereof. Examples of the polymer of this invention include: where each R1 is independently selected from an organic moiety or a halogen; each A is independently a single bond or an organic moiety; R2 is hydrogen or a methyl group; and each X, Y and Z is an integer of 0 to 7, and Y+Z is 7 or less. The organic moiety mentioned above may be a substituted or unsubstituted hydrocarbon selected from the group consisting of a linear or branched alkyl, halogenated linear or branched alkyl, aryl, halogenated aryl, cyclic alkyl, and halogenated cyclic alkyl, and any combination thereof.

Abstract: A new underlayer composition that exhibits high etch resistance and improved optical properties is disclosed. The underlayer composition comprises a vinyl or acrylate polymer, such as a methacrylate polymer, the polymer comprising at least one substituted or unsubstituted naphthalene or naphthol moiety, including mixtures thereof. Examples of the polymer of this invention include: where each R1 is independently selected from an organic moiety or a halogen; each A is independently a single bond or an organic moiety; R2 is hydrogen or a methyl group; and each X, Y and Z is an integer of 0 to 7, and Y+Z is 7 or less. The organic moiety mentioned above may be a substituted or unsubstituted hydrocarbon selected from the group consisting of a linear or branched alkyl, halogenated linear or branched alkyl, aryl, halogenated aryl, cyclic alkyl, and halogenated cyclic alkyl, and any combination thereof.

Abstract: Preferred gas generant compositions incorporate a combination of 5-aminotetrazole nitrate and an oxidizer. The oxidizer may be selected from a group including nonmetal and metal nitrates, nitrites, chlorates, chlorites, perchlorates, and oxides. 5-aminotetrazole nitrate is characterized as an oxygen-rich fuel and is therefore considered to be a self-deflagrating fuel. To tailor the oxygen balance in certain applications, however, the use of an oxidizer is preferred. Methods of formulating the compositions are also described. These compositions are especially suitable for inflating air bags and actuating seatbelt pretensioners in passenger-restraint devices.

Abstract: A top anti-reflective coating material (TARC) and barrier layer, and the use thereof in lithography processes, is disclosed. The TARC/barrier layer may be especially useful for immersion lithography using water as the imaging medium. The TARC/barrier layer comprises a polymer which comprises at least one silicon-containing moiety and at least one aqueous base soluble moiety. Suitable polymers include polymers having a silsesquioxane (ladder or network) structure, such as polymers containing monomers having the structure: where R1 comprises an aqueous base soluble moiety, and x is from about 1 to about 1.95, more preferably from about 1 to about 1.75.