Abstract: A regeneration energy shunt system utilizes a module to monitor the power bus voltage and can divert excess regeneration energy to a resistor array to dissipate the excess regeneration energy. The module can monitor the state of charge of a rechargeable power source to ascertain when excess regeneration energy condition exists. The resistor array can include a plurality of resistors. The module can ascertain the number of resistors needed dissipate the excess regeneration energy and selectively direct the excess regeneration energy to the required number of resistors. The module can dynamically switch which resistors are used to dissipate the excess regeneration energy and can thereby even out the loading across the resistors. The module can ascertain a state of health of the individual resistors and remove unhealthy resistors from service, report the state of health of the resistors, and initiate changes in operation based thereon.

Abstract: Merging sub-resolution assist features includes receiving a mask pattern that includes the sub-resolution assist features. A first sub-resolution assist feature is selected to merge with a second sub-resolution assist feature. A merge bar width of a merge bar is established. A distance between the first sub-resolution assist feature and the second sub-resolution assist feature is determined. A merging technique is determined in accordance with the distance and the merge bar width. The first sub-resolution assist feature and the second sub-resolution assist feature are merged according to the identified merging technique.

Abstract: Merging sub-resolution assist features includes receiving a mask pattern that includes the sub-resolution assist features. A first sub-resolution assist feature is selected to merge with a second sub-resolution assist feature. A merge bar width of a merge bar is established. A distance between the first sub-resolution assist feature and the second sub-resolution assist feature is determined. A merging technique is determined in accordance with the distance and the merge bar width. The first sub-resolution assist feature and the second sub-resolution assist feature are merged according to the identified merging technique.

Abstract: In accordance with the invention, there is provided a system and method for checking a mask layout including sub-resolution assist features (SRAFs). A checking program divides each edge of each main feature into sections, forms a set of segments by searching perpendicularly over a distance to determine if any portion of a feature is located within the distance. Segments are then flagged based on whether a feature located within proximity to that segment. A classification program may then classify each of the main features based on the segment data.

Abstract: A method is provided for determining pitch of lithographic features of a mask. The method includes determining a bias based on an interaction between a plurality of reference features positioned according to a lithographic parameter of the mask, applying the bias to a plurality of lithographic features of the mask, and determining pitch of the plurality of lithographic features based on interactions between the biased plurality of lithographic features of the mask.

Abstract: A design application improves design checking by utilizing a template. During the checking process, the design application divides the design layout into regions. To further improve processing speed, the design application utilizes the template. The template maps the location of the regions of a design layout during a checking process. The template comprises information such as the dimensions and location of the regions in human-readable form. Because the human-readable template is computationally simple to process, the design application may locate, divide, manage, and merge the regions of the design layout more quickly.

Abstract: A regeneration energy shunt system utilizes a module to monitor the power bus voltage and can divert excess regeneration energy to a resistor array to dissipate the excess regeneration energy. The module can monitor the state of charge of a rechargeable power source to ascertain when excess regeneration energy condition exists. The resistor array can include a plurality of resistors. The module can ascertain the number of resistors needed dissipate the excess regeneration energy and selectively direct the excess regeneration energy to the required number of resistors. The module can dynamically switch which resistors are used to dissipate the excess regeneration energy and can thereby even out the loading across the resistors. The module can ascertain a state of health of the individual resistors and remove unhealthy resistors from service, report the state of health of the resistors, and initiate changes in operation based thereon.

Abstract: A turf maintenance vehicle all-wheel drive traction control system includes a primary wheel propelling the vehicle. A first motor rotates the primary wheel. A traction control system has a first portion communicating with the first motor to monitor either a first motor current demand or a rotational speed of the primary wheel or the first motor and generates a traction control value. A secondary wheel rotated by a second motor steers the vehicle in a vehicle non-slip condition. A traction control system second portion determines a secondary wheel steering angle value. A speed threshold limit stored in the traction control system compared to the traction control value generates a slippage occurrence message indicative of a primary wheel traction loss event. A second motor drive signal created by comparing the steering angle value and the slippage occurrence message energizes the second motor during the traction loss event.

Abstract: Modifying merged sub-resolution assist features includes receiving a mask pattern comprising the merged sub-resolution assist features, where a segmenting sub-resolution assist feature intersects a segmented sub-resolution assist feature at an intersection. Each sub-resolution assist feature is represented by an axis of the sub-resolution assist feature. The length of at least one axis is established, and an axis is modified in accordance with the length. Each axis is converted to a sub-resolution assist feature to yield the modified merged sub-resolution assist features.

Abstract: Merging sub-resolution assist features includes receiving a mask pattern that includes the sub-resolution assist features. A first sub-resolution assist feature is selected to merge with a second sub-resolution assist feature. A merge bar width of a merge bar is established. A distance between the first sub-resolution assist feature and the second sub-resolution assist feature is determined. A merging technique is determined in accordance with the distance and the merge bar width. The first sub-resolution assist feature and the second sub-resolution assist feature are merged according to the identified merging technique.

Abstract: Modifying merged sub-resolution assist features includes receiving a mask pattern comprising the merged sub-resolution assist features, where a segmenting sub-resolution assist feature intersects a segmented sub-resolution assist feature at an intersection. Each sub-resolution assist feature is represented by an axis of the sub-resolution assist feature. The length of at least one axis is established, and an axis is modified in accordance with the length. Each axis is converted to a sub-resolution assist feature to yield the modified merged sub-resolution assist features.

Abstract: Merging sub-resolution assist features includes receiving a mask pattern that includes the sub-resolution assist features. A first sub-resolution assist feature is selected to merge with a second sub-resolution assist feature. A merge bar width of a merge bar is established. A distance between the first sub-resolution assist feature and the second sub-resolution assist feature is determined. A merging technique is determined in accordance with the distance and the merge bar width. The first sub-resolution assist feature and the second sub-resolution assist feature are merged according to the identified merging technique.

Abstract: Modifying sub-resolution assist features includes receiving a mask pattern for a photolithographic mask. The mask pattern includes main features, and the photolithographic mask is operable to pattern a wafer pattern for a semiconductor wafer. Placement of sub-resolution assist features for the main features is estimated. The following is repeated for one or more iterations: correcting the main features using a wafer pattern model operable to estimate the wafer pattern; evaluating the sub-resolution assist features according to the wafer pattern model; and modifying at least one sub-resolution assist feature in accordance with the evaluation.

Abstract: A design application improves design checking by utilizing a template. During the checking process, the design application divides the design layout into regions. To further improve processing speed, the design application utilizes the template. The template maps the location of the regions of a design layout during a checking process. The template comprises information such as the dimensions and location of the regions in human-readable form. Because the human-readable template is computationally simple to process, the design application may locate, divide, manage, and merge the regions of the design layout more quickly.

Abstract: A method is provided for determining pitch of lithographic features of a mask. The method includes determining a bias based on an interaction between a plurality of reference features positioned according to a lithographic parameter of the mask, applying the bias to a plurality of lithographic features of the mask, and determining pitch of the plurality of lithographic features based on interactions between the biased plurality of lithographic features of the mask.

Abstract: A method of operating a computing system to determine reticle data. The reticle data is for completing a reticle for use in projecting an image to a semiconductor wafer. The method comprises receiving circuit design layer data comprising a desired circuit layer layout, the layout comprising a plurality of circuit features. The method further comprises providing the reticle data for inclusion in an output data file for use in forming reticle features on the reticle. This providing step comprises a first iteration and a second iteration. In a first iteration, the method indicates parameters for forming a plurality of primary features and a first plurality of assist features on the reticle and it selectively removes the parameters of selected ones of the first plurality assist features. In a second iteration, the method indicates parameters for forming a second plurality of assist features on the reticle.

Abstract: In accordance with the invention, there is provided a system and method for checking a mask layout including sub-resolution assist features (SRAFs). A checking program divides each edge of each main feature into sections, forms a set of segments by searching perpendicularly over a distance to determine if any portion of a feature is located within the distance. Segments are then flagged based on whether a feature located within proximity to that segment. A classification program may then classify each of the main features based on the segment data.

Abstract: A self-aligned silicide process with a selective etch of unreacted metal (plus any nitride) with respect to silicide plus a two step process of highly selective strip of unreacted metal (plus any nitride) followed by a silicide etch to remove unwanted silicide filament.

Abstract: Self-aligned silicidation (e.g., Ti, Co, or Ni silicides) for silicon integrated circuits with an HF-based final etch of the silicide to remove filaments. Either ultradilute HF solution or HF vapor may be used.

Abstract: One embodiment of the instant invention is a method of abruptly terminating etching of a dielectric layer on a semiconductor wafer, the method comprising the steps of: removing the semiconductor wafer from the etchant, the etchant is held a first temperature; and rinsing the semiconductor wafer in a rinse solution that is at a second temperature, the second temperature is at least 5.degree. C. colder than the first temperature. Preferably, the dielectric layer is comprised of: TEOS, BPSG, PSG, thermally grown oxide, and any combination thereof. Preferably, first temperature is approximately 25.degree. C. and the second temperature is approximately 0.degree. to 5.degree. C.; or the first temperature is approximately 70.degree. to 90.degree. C. and the second temperature is approximately 10.degree. to 30.degree. C. Preferably, the etchant is comprised of a buffered or unbuffered HF acid, and the rinse solution is comprised of deionized water. The second temperature is, preferably, at least 15.degree. C.