Abstract: An activatable wrap material includes a film material a first side and a second side opposite the first side. The wrap material includes a plurality of protrusions extending outward from the first side of the wrap material and oriented in a pattern across the first side of the wrap material and a plurality of planar portions defined within the first side of the wrap material and throughout the plurality of protrusions. The wrap material exhibits an average peel adhesion force, when activated against a surface, between about 1.50 g/in to about 3.25 g/in. The wrap material further exhibits an average roll unwind force, when wound on a roll, between about 1.50 g/in to about 5.0 g/in. The wrap material also exhibits an average blocking force, when contacting itself, between about 0.4 g/in2 to about 1.30 g/in2.

Abstract: The invention discloses a semiconductor multi-station processing chamber. Each of the multiple station includes a downward concave accommodation defined by walls and receives a pedestal therein. The pedestal and the walls define a first gap. A showerhead plate mounted on an upper lid above the pedestal to define a processing region. A second gap for supply swiping gas is defined between the showerhead plate and the upper lid. An isolation member is liftable between the downward concave accommodation and the showerhead plate to optionally encircle a processing region defined by the pedestal and the showerhead plate or to retract back into the downward concave accommodation. Such that, when the isolation member surrounds and encircles the processing region, the station is able to be structurally isolated from its neighboring one station.

Abstract: An electronic device may be provided with a display. The display may include a backlight having an array of locally dimmable light sources. Control circuitry may provide control signals to the backlight to produce light at different brightness levels. When the brightness level is below a threshold, the control circuitry may use pulse-width-modulation control signals to control the light sources in the backlight. When the brightness level is above the brightness threshold, the control circuitry may use analog control signals to control the light sources in the backlight. The control circuitry may adjust the threshold to achieve different dimming ranges for different brightness settings. A low brightness setting, for example, may have a lower threshold and lower dimming range than a high brightness setting, which may help produce darker darks when the display operates in a low brightness setting.

Abstract: Representative embodiments disclose mechanisms to perform visual intent classification or visual intent detection or both on an image. Visual intent classification utilizes a trained machine learning model that classifies subjects in the image according to a classification taxonomy. The visual intent classification can be used as a pre-triggering mechanism to initiate further action in order to substantially save processing time. Example further actions include user scenarios, query formulation, user experience enhancement, and so forth. Visual intent detection utilizes a trained machine learning model to identify subjects in an image, place a bounding box around the image, and classify the subject according to the taxonomy. The trained machine learning model utilizes multiple feature detectors, multi-layer predictions, multilabel classifiers, and bounding box regression.

Abstract: Disclosed is a load lock chamber which includes a chamber body including: at least one pair of cavities, defined in a layer structure of the chamber body to carry one or more wafer substrates; at least one internal conduit, defined between and coupled with the paired cavities, such that the paired cavities are communicated with each other and capable of conducting gas refilling and exhaustion; and a plurality of wafer supports for carrying the wafer substrates, the plurality of wafer supports being securely received in the paired cavities and able to calibrate with a machine arm frontend finger, wherein the wafer support includes grooves defined thereon for calibrating the machine arm frontend finger.

Abstract: Methods are disclosed for purging contaminants from a vessel such as a FOUP with vacuum-assistance. After the vessel is purged of environmental contaminants with a purging medium, the vessel is pressurized with a pressurizing medium such as nitrogen (N2) gas to yield a desired atmosphere. After the vessel has been pressurized via either negative or positive pressure, the vessel is transported to a storage location that is a non-purge storage and that is physically separate from the charging station, such as a stocker. The vessel can be left in non-purge storage for an amount of time and then the cycle can be repeated if the vessel has not been utilized in another processing step such as another processing step for manufacturing semiconductor wafers.

Abstract: An electronic device may be provided with a display. The display may include a backlight having an array of locally dimmable light sources. Control circuitry may provide control signals to the backlight to produce light at different brightness levels. When the brightness level is below a threshold, the control circuitry may use pulse-width-modulation control signals to control the light sources in the backlight. When the brightness level is above the brightness threshold, the control circuitry may use analog control signals to control the light sources in the backlight. The control circuitry may adjust the threshold to achieve different dimming ranges for different brightness settings. A low brightness setting, for example, may have a lower threshold and lower dimming range than a high brightness setting, which may help produce darker darks when the display operates in a low brightness setting.

Abstract: Systems, methods, and computer readable media to improve the operation of display systems are disclosed. In general, techniques are disclosed for dynamically adjusting backlight elements based on image content. More particularly, a backlight element's intensity may be targeted for boosting (i.e., increasing) based on content of the backlight element's corresponding image region, where after a check may be made to determine if the proposed increase is likely to risk generation of a halo. If the proposed intensity increase would risk a halo, the backlight element's proposed intensity may be dimmed. Repeating the boost/dim cycle in an iterative fashion permits an image to be displayed with brighter highlights and deeper blacks.

Abstract: Methods are disclosed for purging contaminants from a vessel such as a FOUP with vacuum-assistance. After the vessel is purged of environmental contaminants with a purging medium, the vessel is pressurized with a pressurizing medium such as nitrogen (N2) gas to yield a desired atmosphere. After the vessel has been pressurized via either negative or positive pressure, the vessel is transported to a storage location that is a non-purge storage and that is physically separate from the charging station, such as a stocker. The vessel can be left in non-purge storage for an amount of time and then the cycle can be repeated if the vessel has not been utilized in another processing step such as another processing step for manufacturing semiconductor wafers.

Abstract: Disclosed is a load lock chamber which includes a chamber body including: at least one pair of cavities, defined in a layer structure of the chamber body to carry one or more wafer substrates; at least one internal conduit, defined between and coupled with the paired cavities, such that the paired cavities are communicated with each other and capable of conducting gas refilling and exhaustion; and a plurality of wafer supports for carrying the wafer substrates, the plurality of wafer supports being securely received in the paired cavities and able to calibrate with a machine arm frontend finger, wherein the wafer support includes grooves defined thereon for calibrating the machine arm frontend finger.

Abstract: A highly tensile dielectric layer is generated on a heat sensitive substrate while not exceeding thermal budget constraints. Ultraviolet (UV) irradiation is used to produce highly tensile films to be used, for example, in strained NMOS transistor architectures. UV curing of as-deposited PECVD silicon nitride films, for example, has been shown to produce films with stresses of at least 1.65 E10 dynes/cm2. Other dielectric capping layer film materials show similar results. In transistor implementations, the stress from a source/drain region capping layer composed of such a film is uniaxially transferred to the NMOS channel through the source-drain regions to create tensile strain in the NMOS channel.

Abstract: A method and/or system allows a user of a social networking service to publish a content item tagged with location information for sharing with other users of the social networking service. The user publishing the content item performs operations on the originating device to generate the content item. The originating communication device attaches the location information to the content item, and transmits the content item to a social networking system. The social networking system may provide various location-based services based on the content item tagged with the location information.

Abstract: A video surveillance system comprises internet protocol (“IP”) cameras; a network; and cloud computing resources having a management resource, a video storage resource, and a viewing and control resource. The IP cameras and cloud computing resources are connected via the network. The IP cameras independently access each of the cloud computing resources. An application software of a device connected to the network identifies one or more objects of interest from the video data of the IP cameras for extraction.

Abstract: Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials are provided. The method involves providing a partially fabricated semiconductor substrate and depositing a tungsten-containing layer on the substrate surface to partially fill one or more high aspect ratio features. The method continues with selective removal of a portion of the deposited layer such that more material is removed near the feature opening than inside the feature. In certain embodiments, removal may be performed at mass-transport limited conditions with less etchant available inside the feature than near its opening. Etchant species are activated before being introduced into the processing chamber and/or while inside the chamber. In specific embodiments, recombination of the activated species is substantially limited and/or controlled during removal, e.g., operation is performed at less than about 250° C. and/or less than about 5 Torr.

Abstract: A method for indicating an overload condition of a data storage system, comprises the steps of: defining one or more load indexes, wherein each of the load indexes has an overload threshold; and if one of the load indexes has met its respective overload threshold, providing an indicator of the overload condition of the storage system, else, monitoring the load indexes.

Abstract: A magnetic vibrator including a first magnetic portion and a second magnetic portion is disclosed. The first magnetic portion includes an inner plate, a first magnet and a second magnet. The inner plate is disposed between the first magnet and the second magnet. The second magnetic portion includes a coil and a wrapper. The coil is disposed around the first magnetic portion and wrapped in the wrapper. The wrapper has a gap corresponding to the inner plate. An interval is configured between the first magnetic portion and the second magnetic portion. When a current is occurred in the coil, the first magnetic portion and the second magnetic portion are actuated to move axially with respect to each other.

Abstract: The present invention addresses provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multi-step ultraviolet curing processes in which UV intensity, wafer substrate temperature and other conditions may be independently modulated at each step. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first step to facilitate removal of the porogen and create a porous dielectric film. In a second step, the film is exposed to UV radiation to increase crosslinking within the porous film. In certain embodiments, the curing takes place in a multi-station UV chamber wherein UV intensity and substrate temperature may be independently controlled at each station.

Abstract: Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a tungsten-containing material followed by selectively removing a portion of the initial layer to form a remaining layer, which is differentially passivated along the depth of the high-aspect ration feature. In certain embodiments, the remaining layer is more passivated near the feature opening than inside the feature. The method may proceed with depositing an additional layer of the same or other material over the remaining layer. The deposition rate during this later deposition operation is slower near the feature opening than inside the features due to the differential passivation of the remaining layer. This deposition variation, in turn, may aid in preventing premature closing of the feature and facilitate filling of the feature in a substantially void free manner.

Abstract: Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a tungsten-containing material followed by selectively removing a portion of the initial layer to form a remaining layer, which is differentially passivated along the depth of the high-aspect ration feature. In certain embodiments, the remaining layer is more passivated near the feature opening than inside the feature. The method may proceed with depositing an additional layer of the same or other material over the remaining layer. The deposition rate during this later deposition operation is slower near the feature opening than inside the features due to the differential passivation of the remaining layer. This deposition variation, in turn, may aid in preventing premature closing of the feature and facilitate filling of the feature in a substantially void free manner.

Abstract: A primary cell having an anode comprising lithium and a cathode comprising iron disulfide (FeS2) and carbon particles. The electrolyte comprises a lithium salt dissolved in a solvent mixture. Iron disulfide powder and carbon black is preferably premixed and stored. A cathode slurry is prepared comprising iron disulfide, carbon black, binder, and a liquid solvent. The mixture is coated onto a substrate and solvent evaporated leaving a dry cathode coating on the substrate. The cathode coating is then baked at elevated temperatures in atmosphere under partial vacuum or in an atmosphere of nitrogen or inert gas. The anode and cathode can be spirally wound with separator therebetween and inserted into the cell casing with electrolyte then added.