Abstract: Embodiments herein describe techniques, systems, and method for a semiconductor device. Embodiments herein may present a semiconductor device having a channel area including a channel III-V material, and a source area including a first portion and a second portion of the source area. The first portion of the source area includes a first III-V material, and the second portion of the source area includes a second III-V material. The channel III-V material, the first III-V material and the second III-V material may have a same lattice constant. Moreover, the first III-V material has a first bandgap, and the second III-V material has a second bandgap, the channel III-V material has a channel III-V material bandgap, where the channel material bandgap, the second bandgap, and the first bandgap form a monotonic sequence of bandgaps. Other embodiments may be described and/or claimed.

Abstract: Embodiments herein describe techniques, systems, and method for a semiconductor device. A semiconductor device may include isolation areas above a substrate to form a trench between the isolation areas. A first buffer layer is over the substrate, in contact with the substrate, and within the trench. A second buffer layer is within the trench over the first buffer layer, and in contact with the first buffer layer. A channel area is above the first buffer layer, above a portion of the second buffer layer that are below a source area or a drain area, and without being vertically above a portion of the second buffer layer. In addition, the source area or the drain area is above the second buffer layer, in contact with the second buffer layer, and adjacent to the channel area. Other embodiments may be described and/or claimed.

Abstract: Embodiments disclosed herein include thin film transistors and methods of forming such thin film transistors. In an embodiment, the thin film transistor may comprise a substrate, a gate electrode over the substrate, and a gate dielectric stack over the gate electrode. In an embodiment, the gate dielectric stack may comprise a plurality of layers. In an embodiment, the plurality of layers may comprise an amorphous layer. In an embodiment, the thin film transistor may also comprise a semiconductor layer over the gate dielectric. In an embodiment, the semiconductor layer is a crystalline semiconductor layer. In an embodiment, the thin film transistor may also comprise a source electrode and a drain electrode.

Abstract: An apparatus is provided which comprises: a plurality of nanowire transistors stacked vertically, wherein each nanowire transistor of the plurality of nanowire transistors comprises a corresponding nanowire of a plurality of nanowires; and a gate stack, wherein the gate stack fully encircles at least a section of each nanowire of the plurality of nanowires.

Abstract: A transistor is described. The transistor includes a substrate, a first semiconductor structure above the substrate, a second semiconductor structure above the substrate, a source contact that includes a first metal structure that contacts a plurality of surfaces of the first semiconductor structure and a drain contact that includes a second metal structure that contacts a plurality of surfaces of the second semiconductor structure. The transistor also includes a gate below a back side of the substrate.

Abstract: An attachment structure for attaching a seat assembly to a vehicle underbody includes a first cross member that extends between a pair of side rails. The first cross member includes first and second transversely extending portions that each support a striker. A second cross member also extends between the pair of side rails. First and second longitudinal members extend between the first and second cross members. The first longitudinal member is attached to the first cross member at the first transversely extending portion and the second longitudinal member is attached to the second cross member at the second transversely extending portion. Straps are mounted to each of the first and second transversely extending portions, with one strap extending underneath each of the first or second longitudinal members. The first and second transversely extending portions each include a horseshoe shaped opening over which the respective striker extends.

Abstract: An attachment structure for attaching a seat assembly to a vehicle underbody includes a first cross member that extends between a pair of side rails. The first cross member includes first and second transversely extending portions that each support a striker. A second cross member also extends between the pair of side rails. First and second longitudinal members extend between the first and second cross members. The first longitudinal member is attached to the first cross member at the first transversely extending portion and the second longitudinal member is attached to the second cross member at the second transversely extending portion. Straps are mounted to each of the first and second transversely extending portions, with one strap extending underneath each of the first or second longitudinal members. The first and second transversely extending portions each include a horseshoe shaped opening over which the respective striker extends.

Abstract: At least one powered disc is suspended from a locomotive and applied to a rail surface for treating the rail surface ahead of driven locomotive wheels to increase adhesion between the driven wheels and the rail surface. Torque applied to the disc varies the rate of rotation of the disc away from that of a freely-rotating disc so that a significant level of creep may be maintained between the disc and the rail surface with substantially no angle of attack between the disc and the longitudinal axis of the rail. The torque may be generated through a second disc contacting the rail and coupled to the first disc with the first and second discs rotating with differing rates of rotation, or may be generated through a passive or active actuator coupled directly to the disc. The amount of creep between the disc and the rail surface and the direction of the creep may be varied in accordance with the level of contamination of the rail and the disc may be disengaged from the rail when cleaning is not required.