Abstract: An apparatus, comprising: a silicon substrate; and a quantum dot laser comprising: a base layer of a III-V semiconductor material, bonded with the silicon substrate; and at least one layer grown epitaxially from the base layer, wherein the at least one layer comprises a quantum dot layer. The apparatus further comprises a photonic element, fabricated on the silicon substrate and including a waveguide optically aligned with the quantum dot layer.

Abstract: A system and related method and assembly are disclosed. The system comprises one or more optical fibers configured to propagate one or more optical signals. The system further comprises at least a first cylindrical lens element fixedly connected with the one or more optical fibers and configured to expand the one or more optical signals along a predefined dimension. The system further comprises at least a second cylindrical lens element optically coupled with the first cylindrical lens element and configured to condense the expanded one or more optical signals along the predefined dimension.

Abstract: Improvements in extinguishing optical signals in silicon photonics may be achieved by supplying a test signal of a known characteristics to a Photonic Element (PE) to extinguish the test signal via a first phase shifter and intensity modulator on a first arm of the PE and a second phase shifter and intensity modulator on a second arm of the PE; sweeping through a plurality of voltages at the first intensity modulator to identify a first voltage that is associated with an extinction ratio at an output of the PE that satisfies an induced loss threshold and a second voltage that is associated with an induced loss in the test signal at the output of the PE that satisfies an extinction ratio threshold; and setting the PE to provide an operational voltage to the first intensity modulator based on the first voltage and the second voltage.

Abstract: An optical phase shifting arrangement and associated optical switching device and method are disclosed. The optical phase shifting arrangement comprises a first optical phase shifter configured to provide a first phase shift to an optical signal, and a second optical phase shifter configured to provide a second phase shift to the optical signal in addition to the first phase shift. During a predefined period, the first optical phase shifter and the second optical phase shifter are driven such that the second phase shift is substantially complementary to the first phase shift.

Abstract: A photonic device can include an optical detector (e.g., a photodetector) coupled to silicon waveguides. Unlike silicon, germanium is an efficient detector at the wavelength of optical signals typically used for data communication. Instead of directly coupling the waveguide to the germanium, in one embodiment, the waveguide extends below the germanium but is spaced sufficiently away from the germanium so that the optical signal is not transferred. Instead, an optical transfer structure (e.g., a tapered waveguide or an optical grating) is disposed between the germanium and the waveguide. The waveguide first transfers the optical signal into the optical transfer structure which then transfers the optical signal into the germanium.

Abstract: A driver circuit for a Mach-Zehnder modulator is provided that includes a first driver having an input to receive one of an input data or input data complement, and an output to be coupled to a first application voltage node associated with a first arm of a Mach-Zehnder modulator. The driver circuit includes a second driver having an input to receive the other of the input data complement or input data, and an output to be coupled to a second application voltage node associated with the first arm of the Mach-Zehnder modulator. The first driver and the second driver differentially drive the first and second application voltage nodes associated with the first arm of the Mach-Zehnder modulator to result in a voltage swing associated with a voltage applied to the first arm that is twice the supply voltage.

Abstract: Improvements in extinguishing optical signals in silicon photonics may be achieved by supplying a test signal of a known characteristics to a Photonic Element (PE) to extinguish the test signal via a first phase shifter and intensity modulator on a first arm of the PE and a second phase shifter and intensity modulator on a second arm of the PE; sweeping through a plurality of voltages at the first intensity modulator to identify a first voltage that is associated with an extinction ratio at an output of the PE that satisfies an induced loss threshold and a second voltage that is associated with an induced loss in the test signal at the output of the PE that satisfies an extinction ratio threshold; and setting the PE to provide an operational voltage to the first intensity modulator based on the first voltage and the second voltage.

Abstract: The embodiments herein describe an optical transmitter that integrates a SCOWA into a photonic chip that includes a modulator. The embodiments herein place the SCOWA between the laser and the modulator. To accommodate the large mode size of the waveguide in the SCOWA, the photonic chip includes a pair of spot size converters coupled to the input and output of the SCOWA. Rather than amplifying a modulated signal as is typical with an inline amplifier, the SCOWA amplifies a continuous wave (CW) optical signal generated by the laser which introduces less noise and improves the OSNR of the transmitter.

Abstract: Embodiments herein describe photonic systems that include a germanium photodetector thermally coupled to a resistive element. Current flowing through the resistive element increases the temperature of the resistive element. Heat from the resistive element increases the temperature of the thermally coupled photodetector. Increasing the temperature of the photodetector increases the responsivity of the photodetector. The bias voltage of the photodetector can be increased to increase the bandwidth of the photodetector. In various embodiments, the photodetector includes at least one waveguide to receive light into the photodetector. Other embodiments include multiple resistive elements thermally coupled to the photodetector.

Abstract: Improvements in extinguishing optical signals in silicon photonics may be achieved by supplying a test signal of a known characteristics to a Photonic Element (PE) to extinguish the test signal via a first phase shifter and intensity modulator on a first arm of the PE and a second phase shifter and intensity modulator on a second arm of the PE; sweeping through a plurality of voltages at the first intensity modulator to identify a first voltage that is associated with an extinction ratio at an output of the PE that satisfies an induced loss threshold and a second voltage that is associated with an induced loss in the test signal at the output of the PE that satisfies an extinction ratio threshold; and setting the PE to provide an operational voltage to the first intensity modulator based on the first voltage and the second voltage.

Abstract: A method of creating a laser, comprising: bonding a III-V semiconductor material with a silicon substrate; removing excess III-V semiconductor material bonded with the substrate to leave a III-V semiconductor material base layer of a predetermined thickness bonded with the substrate; and after removing the excess III-V semiconductor material, epitaxially growing at least one layer on the III-V semiconductor material base layer, the at least one layer comprising a quantum dot layer.

Abstract: Embodiments herein describe photonic systems that include a germanium photodetector thermally coupled to a resistive element. Current flowing through the resistive element increases the temperature of the resistive element. Heat from the resistive element increases the temperature of the thermally coupled photodetector. Increasing the temperature of the photodetector increases the responsivity of the photodetector. The bias voltage of the photodetector can be increased to increase the bandwidth of the photodetector. In various embodiments, the photodetector includes at least one waveguide to receive light into the photodetector. Other embodiments include multiple resistive elements thermally coupled to the photodetector.

Abstract: A method of creating a laser, comprising: bonding a III-V semiconductor material with a silicon substrate; removing excess III-V semiconductor material bonded with the substrate to leave a III-V semiconductor material base layer of a predetermined thickness bonded with the substrate; and after removing the excess III-V semiconductor material, epitaxially growing at least one layer on the III-V semiconductor material base layer, the at least one layer comprising a quantum dot layer.

Abstract: A wafer comprising: a silicon substrate; a base layer of a predetermined thickness of a III-V semiconductor material bonded with the silicon substrate; and at least one layer grown on the base layer to form a plurality of quantum dot lasers.

Abstract: An apparatus, comprising: a silicon substrate; and a quantum dot laser comprising: a base layer of a III-V semiconductor material, bonded with the silicon substrate; and at least one layer grown epitaxially from the base layer, wherein the at least one layer comprises a quantum dot layer. The apparatus further comprises a photonic element, fabricated on the silicon substrate and including a waveguide optically aligned with the quantum dot layer.

Abstract: A system and related method and assembly are disclosed. The system comprises one or more optical fibers configured to propagate one or more optical signals. The system further comprises at least a first cylindrical lens element fixedly connected with the one or more optical fibers and configured to expand the one or more optical signals along a predefined dimension. The system further comprises at least a second cylindrical lens element optically coupled with the first cylindrical lens element and configured to condense the expanded one or more optical signals along the predefined dimension.

Abstract: An optical apparatus comprises a first arm comprising a first optical waveguide configured to propagate a first optical signal, and a first thermo-optic (TO) phase shifter arranged proximate to the first optical waveguide. The optical apparatus further comprises a second arm comprising a second optical waveguide configured to propagate a second optical signal, and a second TO phase shifter arranged proximate to the second optical waveguide. The optical apparatus further comprises a thermal bridge arranged between the first TO phase shifter and the second TO phase shifter.

Abstract: An optical phase shifting arrangement and associated optical switching device and method are disclosed. The optical phase shifting arrangement comprises a first optical phase shifter configured to provide a first phase shift to an optical signal, and a second optical phase shifter configured to provide a second phase shift to the optical signal in addition to the first phase shift. During a predefined period, the first optical phase shifter and the second optical phase shifter are driven such that the second phase shift is substantially complementary to the first phase shift.

Abstract: The present disclosure discloses a photonic chip. The photonic chip receives a first optical signal and a second optical signal with different wavelengths from two optical sources, respectively. The photonic chip includes a polarization multiplexing element (PME). The PME receives the first and the second optical signals from the first and the second optical sources respectively and combines the first and the second optical signals into a single optical path. The PME polarizes the first optical signal to have a different polarization than the second optical signal and transmits the combined first and the second optical signals in a common waveguide.

Abstract: Embodiments herein describe optical interposers that utilize waveguides to detect light. For example, in one embodiment, an apparatus is provided that includes an optical detector having a first layer. The first layer includes at least one of polysilicon or amorphous silicon. The first layer forms a diode that includes a p-doped region and an n-doped region. The apparatus further includes a waveguide optically coupled to the diode and disposed on a different layer than the first layer.