Abstract: Methods, systems, and devices for memory accessing with auto-precharge are described. For example, a memory system may be configured to support an activate with auto-precharge command, which may be associated with a memory device opening a page of memory cells, latching respective logic states stored by the memory cells at a row buffer, writing logic states back to the page of memory cells, and maintaining the latched logic states at the row buffer (e.g., while maintaining power to latches of the row buffer, after closing the page of memory cells, while the page of memory cells is closed).

Abstract: Methods, systems, and devices for error control for content-addressable memory (CAM) are described. A CAM may store bit vectors as a set of subvectors, which each subvector stored in an independent aspect of the CAM, such as in a separate column or array of memory cells within the CAM. The CAM may similarly segment a queried input bit vector and identify, for each resulting input subvector, whether a matching subvector is stored by the CAM. The CAM may identify a match for the input bit vector when the number of matching subvectors satisfies a threshold. The CAM may validate a match based on comparing a stored bit vector corresponding to the identified match to the input bit vector. The stored bit vector may undergo error correction and may be stored in the CAM or another memory array, such as a dynamic random access memory (DRAM) array.

Abstract: A computer system includes physical memory devices of different types that store randomly-accessible data in memory of the computer system. In one approach, access to memory in an address space is maintained by an operating system of the computer system. A virtual page is associated with a first memory type. A page table entry is generated to map a virtual address of the virtual page to a physical address in a first memory device of the first memory type. The page table entry is used by a memory management unit to store the virtual page at the physical address.

Abstract: Methods, systems, and devices for error caching techniques for improved error correction in a memory device are described. An apparatus, such as a memory device, may use an error cache to store indications of memory cells identified as defective and may augment an error correction procedure using the stored indications. If one or more errors are detected in data read from the memory array, the apparatus may check the error cache, and if a bit of the data is indicated as being associated with a defective cell, the bit may be inverted. After such inversion, the data may be checked for errors again. If the inversion corrects an error, the resulting data may be error-free or may include a reduced quantity of errors that may be correctable using an error correction scheme.

Abstract: A memory chip (e.g., DRAM) connecting a SoC and an accelerator chip (e.g., an AI accelerator chip). A system including the memory chip and the accelerator chip. The system can include the SoC. The memory chip can include first memory cells to store and provide computation input data (e.g., AI computation input data) received from the SoC to be used by the accelerator chip as computation input (e.g., AI computation input). The memory chip can include second memory cells to store and provide first computation output data (e.g., AI computation output data) received from the accelerator chip to be retrieved by the SoC or reused by the accelerator chip as computation input. The memory chip can also include third memory cells to store second computation output data (e.g., non-AI computation output data) related to non-AI tasks received from the SoC to be retrieved by the SoC for non-AI tasks.

Abstract: Methods, systems, and devices for error correction for content-addressable memory (CAM) are described. A CAM may store bit vectors as a set of subvectors, which each subvector stored in an independent aspect of the CAM, such as in a separate column or array of memory cells within the CAM. The CAM may similarly segment a queried input bit vector and identify, for each resulting input subvector, whether a matching subvector is stored by the CAM. The CAM may identify a match for the input bit vector when the number of matching subvectors satisfies a threshold. The CAM may validate a match based on comparing a stored bit vector corresponding to the identified match to the input bit vector. The stored bit vector may undergo error correction and may be stored in the CAM or another memory array, such as a dynamic random access memory (DRAM) array.

Abstract: An apparatus (e.g., a content addressable memory system) can have a controller, a first content addressable memory coupled to the controller, and a second content addressable memory coupled to the controller. The controller can be configured to cause the first content addressable memory to write data in the first content addressable memory, cause the second content addressable memory to write the data in the second content addressable memory, and cause the second content addressable memory to query the data written in the second content addressable memory while the first content addressable memory continues to write the data in the first content addressable memory.

Abstract: A memory chip having a first set of pins configured to allow the memory chip to be coupled to a first microchip or device via first wiring. The memory chip also having a second set of pins configured to allow the memory chip to be coupled to a second microchip or device via second wiring that is separate from the first wiring. The memory chip also having a data mover configured to facilitate access to the second microchip or device, via the second set of pins, to read data from the second microchip or device and write data to the second microchip or device. Also, a system having the memory chip, the first microchip or device, and the second microchip or device.

Abstract: Systems, methods, and apparatus related to data recovery in memory devices. In one approach, a memory device encodes stored data. The memory device reads a codeword from a storage media and determines that a number errors in the codeword exceeds an error correction capability of the memory device. The errors are due, for example, to one or more stuck bits. In response to this determination, one or more data patterns are written to the storage media at the same address from which the codeword is read. The data patterns are read to identify bit locations of the stuck bits. The identified locations are used to correct bit errors of the read codeword that correspond to the identified locations. The corrected code word is sent to a host device (e.g., which requested data from the memory device using a read command).

Abstract: A memory chip (e.g., DRAM) connecting a SoC and an accelerator chip (e.g., an AI accelerator chip). A system including the memory chip and the accelerator chip. The system can include the SoC. The memory chip can include first memory cells to store and provide computation input data (e.g., AI computation input data) received from the SoC to be used by the accelerator chip as computation input (e.g., AI computation input). The memory chip can include second memory cells to store and provide first computation output data (e.g., AI computation output data) received from the accelerator chip to be retrieved by the SoC or reused by the accelerator chip as computation input. The memory chip can also include third memory cells to store second computation output data (e.g., non-AI computation output data) related to non-AI tasks received from the SoC to be retrieved by the SoC for non-AI tasks.

Abstract: Methods, systems, and devices for adaptive parity techniques for a memory device are described. An apparatus, such as a memory device, may use one or more error correction code (ECC) schemes, an error cache, or both to support access operations. The memory device may receive a command from a host device to read or write data. If the error cache includes an entry for the data, the memory device may read or write the data using a first ECC scheme. If the error cache does not include an entry for the data, the memory device may read or write the data without using an ECC scheme or using a second ECC scheme different than the first ECC scheme.

Abstract: Methods, systems, and devices for memory accessing with auto-precharge are described. For example, a memory system may be configured to support an activate with auto-precharge command, which may be associated with a memory device opening a page of memory cells, latching respective logic states stored by the memory cells at a row buffer, writing logic states back to the page of memory cells, and maintaining the latched logic states at the row buffer (e.g., while maintaining power to latches of the row buffer, after closing the page of memory cells, while the page of memory cells is closed).

Abstract: Systems, methods, and apparatus related to data recovery in memory devices. In one approach, a memory device encodes stored data. The memory device reads a codeword from a storage media and determines that a number errors in the codeword exceeds an error correction capability of the memory device. The errors are due, for example, to one or more stuck bits. In response to this determination, one or more data patterns are written to the storage media at the same address from which the codeword is read. The data patterns are read to identify bit locations of the stuck bits. The identified locations are used to correct bit errors of the read codeword that correspond to the identified locations. The corrected code word is sent to a host device (e.g., which requested data from the memory device using a read command).

Abstract: A computer system includes physical memory devices of different types that store randomly-accessible data in a main memory of the computer system. In one approach, data is stored in memory at one or more logical addresses allocated to an application by an operating system. The data is physically stored in a first memory device of a first memory type (e.g., NVRAM). The operating system determines an access pattern for the stored data. In response to determining the access pattern, the data is moved from the first memory device to a second memory device of a different memory type (e.g., DRAM).

Abstract: An example memory sub-system includes: a plurality bank groups, wherein each bank group comprises a plurality of memory banks; a plurality of row buffers, wherein two or more row buffers of the plurality of row buffers are associated with each bank group; and a processing logic communicatively coupled to the plurality of bank groups and the plurality of row buffers, the processing logic to perform operations comprising: receiving, from a host, a command identifying a row buffer of the plurality of row buffers; and perform an operation with respect to the identified row buffer.

Abstract: An example memory sub-system includes: a plurality of bank groups, wherein each bank group comprises a plurality of memory banks; a plurality of row buffers, wherein two or more row buffers of the plurality of row buffers are associated with each memory bank; a cache comprising a plurality of cache lines; a processing logic communicatively coupled to the plurality of bank groups and the plurality of row buffers, the processing logic to perform operations comprising: receiving an activate command specifying a row of a memory bank of the plurality of memory banks; fetching data from the specified row to a row buffer of the plurality of row buffers; and copying the data to a cache line of the plurality of cache lines.

Abstract: Methods, systems, and devices for indication-based avoidance of defective memory cells are described. A non-volatile memory component may store information regarding one or more memory cells of a volatile memory component that a host device for the volatile memory component is to avoid accessing. The one or more memory cells may be defective for example. The device may transmit, to the non-volatile memory component, a request for an indication of the one or more memory cells of the volatile memory component that the host device is to avoid accessing, and the non-volatile memory may transmit such an indication to the host device. The host device may refrain from writing or reading from the one or more memory cells of the volatile memory component.

Abstract: A computer system includes physical memory devices of different types that store randomly-accessible data in a main memory of the computer system. In one approach, data is stored in memory at one or more logical addresses allocated to an application by an operating system. The data is physically stored in a first memory device of a first memory type (e.g., NVRAM). The operating system determines an access pattern for the stored data. In response to determining the access pattern, the data is moved from the first memory device to a second memory device of a different memory type (e.g., DRAM).

Abstract: A memory chip having a predefined memory region configured to store program data transmitted from a microchip. The memory chip also having a programmable engine configured to facilitate access to a second memory chip to read data from the second memory chip and write data to the second memory chip according to stored program data in the predefined memory region. The predefined memory region can include a portion configured as a command queue for the programmable engine, and the programmable engine can be configured to facilitate access to the second memory chip according to the command queue.

Abstract: Methods, systems, and devices for adaptive parity techniques for a memory device are described. An apparatus, such as a memory device, may use one or more error correction code (ECC) schemes, an error cache, or both to support access operations. The memory device may receive a command from a host device to read or write data. If the error cache includes an entry for the data, the memory device may read or write the data using a first ECC scheme. If the error cache does not include an entry for the data, the memory device may read or write the data without using an ECC scheme or using a second ECC scheme different than the first ECC scheme.