Patents by Inventor Sean Seutter
Sean Seutter has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9842949Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects as well as Fabrication methods and structures for forming thin film back contact solar cells are described.Type: GrantFiled: August 9, 2012Date of Patent: December 12, 2017Assignee: OB REALTY, LLCInventors: Mehrdad M. Moslehi, Pawan Kapur, K.-Josef Kramer, Virendra V. Rana, Sean Seutter, Anand Deshpande, Anthony Calcaterra, Gerry Olsen, Kamran Manteghi, Thom Stalcup, George D. Kamian, David Xuan-Qi Wang, Yen-Sheng Su, Michael Wingert
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Patent number: 9337374Abstract: Processing equipment for the metallization of a plurality of semiconductor workpieces. A controlled atmospheric non-oxidizing gas region comprises at least two enclosed deposition zones, the controlled atmospheric non-oxidizing gas region is isolated from external oxidizing ambient. A temperature controller adjusts the temperature of the semiconductor workpiece in each of the at least two enclosed deposition zones. Each of the enclosed deposition zones comprising at least one spray gun for the metallization of the semiconductor workpiece. A transport system moves the semiconductor workpiece through the controlled atmospheric non-oxidizing gas region. A batch carrier plate carries the semiconductor workpiece through the controlled atmospheric non-oxidizing gas region. The controlled atmospheric non-oxidizing gas region further comprises a gas-based pre-cleaning zone.Type: GrantFiled: December 23, 2012Date of Patent: May 10, 2016Assignee: Solexel, Inc.Inventors: Karl-Josef Kramer, Jay Ashjaee, Mehrdad M. Moslehi, Anthony Calcaterra, David Dutton, Pawan Kapur, Sean Seutter, Homi Fatemi
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Patent number: 9214353Abstract: Methods and systems are provided for the split and separation of a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, micro-electro-mechanical system (MEMS), or optoelectronic devices, from a thicker donor wafer using laser irradiation.Type: GrantFiled: February 26, 2013Date of Patent: December 15, 2015Assignee: Solexel, Inc.Inventors: Takao Yonehara, Virenda V. Rana, Sean Seutter, Mehrdad M. Moslehi, Subramanian Tamilmani
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Patent number: 8962380Abstract: Back contact back junction solar cell and methods for manufacturing are provided. The back contact back junction solar cell comprises a substrate having a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer and patterned reflective layer on the emitter form a light trapping backside mirror. An interdigitated metallization pattern is positioned on the backside of the solar cell and a permanent reinforcement provides support to the cell.Type: GrantFiled: December 9, 2010Date of Patent: February 24, 2015Assignee: Solexel, Inc.Inventors: Mehrdad M Moslehi, Pawan Kapur, Karl-Josef Kramer, David Xuan-Qi Wang, Sean Seutter, Virenda V Rana, Anthony Calcaterra, Emmanuel Van Kerschaver
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Publication number: 20150020877Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects as well as Fabrication methods and structures for forming thin film back contact solar cells are described.Type: ApplicationFiled: August 9, 2012Publication date: January 22, 2015Applicant: SOLEXEL, INC.Inventors: Mehrdad M. Moslehi, Pawan Kapur, Karl-Josef Kramer, Virendra V. Rana, Sean Seutter, Anand Deshpande, Anthony Calcaterra, Gerry Olsen, Kamran Manteghi, Thom Stalcup, George D. Kamian, David Xuan-Qi Wang, Yen-Sheng Su, Michael Wingert
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Publication number: 20140038392Abstract: Methods and systems are provided for the split and separation of a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, micro-electro-mechanical system (MEMS), or optoelectronic devices, from a thicker donor wafer using laser irradiation.Type: ApplicationFiled: February 26, 2013Publication date: February 6, 2014Inventors: Takao Yonehara, Virenda V. Rana, Sean Seutter, Mehrdad M. Moslehi, Subramanian Tamilmani
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Publication number: 20130233378Abstract: A back contact back junction solar cell using semiconductor wafers and methods for manufacturing are provided. The back contact back junction solar cell comprises a semiconductor wafer having a doped base region, a light capturing frontside surface, and a doped backside emitter region. A frontside and backside dielectric layer and passivation layer provide enhance light trapping and internal reflection. Backside base and emitter contacts are connected to metal interconnects forming a metallization pattern of interdigitated fingers and busbars on the backside of the solar cell.Type: ApplicationFiled: December 9, 2010Publication date: September 12, 2013Applicant: SOLEXEL, INC.Inventors: Mehrdad M Moslehi, Pawan Kapur, Karl-Josef Kramer, David Xuan-Qi Wang, Sean Seutter, Virenda V Rana, Anthony Calcaterra, Emmanuel Van Kerschaver, Duncan Harwood, Majid Mansoori, Michael Wingert
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Publication number: 20120291709Abstract: A method and apparatus for processing a substrate utilizing a rotating substrate support are disclosed herein. In one embodiment, an apparatus for processing a substrate includes a chamber having a substrate support assembly disposed within the chamber. The substrate support assembly includes a substrate support having a support surface and a heater disposed beneath the support surface. A shaft is coupled to the substrate support and a motor is coupled to the shaft through a rotor to provide rotary movement to the substrate support. A seal block is disposed around the rotor and forms a seal therewith. The seal block has at least one seal and at least one channel disposed along the interface between the seal block and the shaft. A port is coupled to each channel for connecting to a pump. A lift mechanism is coupled to the shaft for raising and lowering the substrate support.Type: ApplicationFiled: July 26, 2012Publication date: November 22, 2012Applicant: Applied Materials, Inc.Inventors: Jacob Smith, ALEXANDER TAM, R. SURYANARAYANAN IYER, SEAN SEUTTER, BINH TRAN, NIR MERRY, ADAM BRAILOVE, ROBERT SHYDO, JR., ROBERT ANDREWS, FRANK ROBERTS, THEODORE SMICK, GEOFFREY RYDING
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Patent number: 7846793Abstract: A device, such as a nonvolatile memory device, and methods for forming the device in an integrated process tool are provided. The method includes depositing a tunnel oxide layer on a substrate, exposing the tunnel oxide layer to a plasma so that the plasma alters a morphology of a surface and near surface of the tunnel oxide to form a plasma altered near surface. Nanocrystals are then deposited on the altered surface of the tunnel oxide.Type: GrantFiled: October 3, 2007Date of Patent: December 7, 2010Assignee: Applied Materials, Inc.Inventors: Christopher S. Olsen, Sean Seutter, Ming Li, Phillip Allan Kraus
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Publication number: 20100224130Abstract: A method and apparatus for processing a substrate utilizing a rotating substrate support are disclosed herein. In one embodiment, an apparatus for processing a substrate includes a chamber having a substrate support assembly disposed within the chamber. The substrate support assembly includes a substrate support having a support surface and a heater disposed beneath the support surface. A shaft is coupled to the substrate support and a motor is coupled to the shaft through a rotor to provide rotary movement to the substrate support. A seal block is disposed around the rotor and forms a seal therewith. The seal block has at least one seal and at least one channel disposed along the interface between the seal block and the shaft. A port is coupled to each channel for connecting to a pump. A lift mechanism is coupled to the shaft for raising and lowering the substrate support.Type: ApplicationFiled: May 13, 2010Publication date: September 9, 2010Inventors: Jacob Smith, Alexander Tam, R. Suryanarayanan Iyer, Sean Seutter, Binh Tran, Nir Merry, Adam Brailove, Robert Shydo, JR., Robert Andrews, Frank Roberts, Theodore Smick, Geoffrey Ryding
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Publication number: 20090090952Abstract: A device, such as a nonvolatile memory device, and methods for forming the device in an integrated process tool are provided. The method includes depositing a tunnel oxide layer on a substrate, exposing the tunnel oxide layer to a plasma so that the plasma alters a morphology of a surface and near surface of the tunnel oxide to form a plasma altered near surface. Nanocrystals are then deposited on the altered surface of the tunnel oxide.Type: ApplicationFiled: October 3, 2007Publication date: April 9, 2009Inventors: Christopher S. Olsen, Sean Seutter, Ming Li, Phillip Allan Kraus
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Publication number: 20070125762Abstract: Apparatus, reactors, and methods for heating substrates are disclosed. The apparatus comprises a stage comprising a body and a surface having an area to support a substrate, a shaft coupled to the stage, a first heating element disposed within a central region of the body of the stage, and at least second and third heating elements disposed within the body of the stage, the at least second and third heating elements each partially surrounding the first heating element and wherein the at least second and third heating elements are circumferentially adjacent to each other.Type: ApplicationFiled: December 1, 2005Publication date: June 7, 2007Inventors: Anqing Cui, Binh Tran, Alexander Tam, Jacob Smith, R. Iyer, Joseph Yudovsky, Sean Seutter
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Publication number: 20070099415Abstract: In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes positioning a substrate having an underlying tungsten layer within a process chamber and depositing a tungsten-containing barrier layer on the underlying tungsten layer during a cyclical layer deposition process. The tungsten-containing barrier layer contains a refractory metal nitride material. The method further provides depositing a seed layer on the tungsten-containing barrier layer during a vapor deposition process and depositing a bulk tungsten layer on the seed layer during a chemical vapor deposition process.Type: ApplicationFiled: October 16, 2006Publication date: May 3, 2007Inventors: Ling Chen, Hua Chung, Sean Seutter, Michael Yang, Ming Xi, Vincent Ku, Dien-Yeh Wu, Alan Ouye, Norman Nakashima, Barry Chin, Hong Zhang
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Publication number: 20070082507Abstract: A method and apparatus for low temperature deposition of doped silicon nitride films is disclosed. The improvements include a mechanical design for a CVD chamber that provides uniform heat distribution for low temperature processing and uniform distribution of process chemicals, and methods for depositing at least one layer comprising silicon and nitrogen on a substrate by heating a substrate, flowing a silicon containing precursor into a processing chamber having a mixing region defined by an adaptor ring and one or more blocker plates and an exhaust system heating the adapter ring and a portion of the exhaust system, flowing one or more of a hydrogen, germanium, boron, or carbon containing precursor into the processing chamber, and optionally flowing a nitrogen containing precursor into the processing chamber.Type: ApplicationFiled: October 6, 2005Publication date: April 12, 2007Inventors: R. Iyer, Jacob Smith, Sean Seutter, Kangzhan Zhang, Alexander Tam, Kevin Cunningham, Phani Ramachandran
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Publication number: 20060286818Abstract: Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes flowing a nitrogen and carbon containing chemical into a deposition chamber, flowing a silicon-containing source chemical having silicon-nitrogen bonds into the processing chamber, and heating the substrate disposed in the chamber to a temperature less than about 550 degrees Celsius. In another embodiment, the silicon containing chemical is trisilylamine and the nitrogen and carbon containing chemical is (CH3)3—N.Type: ApplicationFiled: June 17, 2005Publication date: December 21, 2006Inventors: Yaxin Wang, Yuji Maeda, Thomas Mele, Sean Seutter, Sanjeev Tandon, R. Iyer
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Publication number: 20060286774Abstract: Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes.Type: ApplicationFiled: June 20, 2006Publication date: December 21, 2006Inventors: Kaushal Singh, Sean Seutter
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Publication number: 20060286819Abstract: Embodiments of the invention generally provide a method for depositing films using photoexcitation. The photoexcitation may be utilized for at least one of treating the substrate prior to deposition, treating substrate and/or gases during deposition, treating a deposited film, or for enhancing chamber cleaning. In one embodiment, a method for depositing silicon and nitrogen-containing film on a substrate includes heating a substrate disposed in a processing chamber, generating a beam of energy of between about 1 to about 10 eV, transferring the energy to a surface of the substrate; flowing a nitrogen-containing chemical into the processing chamber, flowing a silicon-containing chemical with silicon-nitrogen bonds into the processing chamber, and depositing a silicon and nitrogen-containing film on the substrate.Type: ApplicationFiled: June 21, 2005Publication date: December 21, 2006Inventors: Sean Seutter, Kaushal Singh, Jacob Smith, R. Iyer, Steve Ghanayem, Adam Brailove, Robert Shydo, Jeannot Morin
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Publication number: 20060286820Abstract: Embodiments of the invention generally provide a method for depositing films using photoexcitation. The photoexcitation may be utilized for at least one of treating the substrate prior to deposition, treating substrate and/or gases during deposition, treating a deposited film, or for enhancing chamber cleaning. In one embodiment, a method for depositing silicon and nitrogen-containing film on a substrate includes heating a substrate disposed in a processing chamber, generating a beam of energy of between about 1 to about 10 eV, transferring the energy to a surface of the substrate; flowing a nitrogen-containing chemical into the processing chamber, flowing a silicon-containing chemical with silicon-nitrogen bonds into the processing chamber, and depositing a silicon and nitrogen-containing film on the substrate.Type: ApplicationFiled: June 21, 2005Publication date: December 21, 2006Inventors: Kaushal Singh, Sean Seutter, Jacob Smith, R. Iyer, Steve Ghanayem, Adam Brailove, Robert Shydo, Jeannot Morin
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Publication number: 20060281310Abstract: A method and apparatus for processing a substrate utilizing a rotating substrate support are disclosed herein. In one embodiment, an apparatus for processing a substrate includes a chamber having a substrate support assembly disposed within the chamber. The substrate support assembly includes a substrate support having a support surface and a heater disposed beneath the support surface. A shaft is coupled to the substrate support and a motor is coupled to the shaft through a rotor to provide rotary movement to the substrate support. A seal block is disposed around the rotor and forms a seal therewith. The seal block has at least one seal and at least one channel disposed along the interface between the seal block and the shaft. A port is coupled to each channel for connecting to a pump. A lift mechanism is coupled to the shaft for raising and lowering the substrate support.Type: ApplicationFiled: June 8, 2005Publication date: December 14, 2006Inventors: Jacob Smith, Alexander Tam, R. Iyer, Sean Seutter, Binh Tran, Nir Merry, Adam Brailove, Robert Shydo, Robert Andrews, Frank Roberts, Theodore Smick, Geoffrey Ryding
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Publication number: 20060102076Abstract: A method and apparatus for a chemical vapor deposition (CVD) chamber provides uniform heat distribution, uniform distribution of process chemicals in the CVD chamber, and minimization of by-product and condensate residue in the chamber. The improvements include a processing chamber comprising a chamber body, a base, and a chamber lid defining a processing region, a substrate support disposed in the processing region, a gas delivery system mounted on a chamber lid, the gas delivery system comprising an adapter ring and two blocker plates that define a gas mixing region, and a face plate fastened to the adapter ring, an exhaust system mounted at the base, a heating element positioned to heat the adapter ring; and a heating element positioned to heat a portion of the exhaust system.Type: ApplicationFiled: October 7, 2005Publication date: May 18, 2006Inventors: Jacob Smith, Sean Seutter, R. Iyer, Binh Tran, Alexander Tam, James Wilson