Abstract: A method of forming a material on a substrate is disclosed. In one embodiment, the method includes forming a tantalum nitride layer on a substrate disposed in a plasma process chamber by sequentially exposing the substrate to a tantalum precursor and a nitrogen precursor, followed by reducing a nitrogen concentration of the tantalum nitride layer by exposing the substrate to a plasma annealing process. A metal-containing layer is subsequently deposited on the tantalum nitride layer.

Abstract: In one embodiment, a method for depositing a layer containing silicon nitride on a substrate surface is provided which includes positioning a substrate in a process chamber, maintaining the substrate at a predetermined temperature, and exposing the substrate surface to an alkylaminosilane compound and at least one ammonia-free reactant. In another embodiment, a method for depositing a silicon nitride material on a substrate is provided which includes positioning a substrate in a process chamber, maintaining the substrate at a predetermined temperature, and exposing the substrate surface to bis(tertiarybutylamino)silane and a reagent, such as hydrogen, silane and/or disilane.

Abstract: An assembly comprises a multilayer nitride stack having nitride etch stop layers formed on top of one another, each of the nitride etch stop layers is formed using a film forming process. A method of making the multilayer nitride stack includes placing a substrate in a single wafer deposition chamber and thermally shocking the substrate momentarily prior to deposition. A first nitride etch stop layer is deposited over the substrate. A second nitride etch stop layer is deposited over the first nitride etch stop layer.

Abstract: Embodiments of the invention generally provide a method for depositing a film containing silicon (Si) and nitrogen (N). In one embodiment, the method includes heating a substrate disposed in a processing chamber to a temperature less than about 650 degrees Celsius, flowing a nitrogen-containing gas into the processing chamber, flowing a silicon-containing gas into the processing chamber, and depositing a SiN-containing layer on a substrate. The silicon-containing gas is at least one of a gas identified as NR2—Si(R?2)—Si(R?2)—NR2 (amino(di)silanes), R3—Si—N?N?N (silyl azides), R?3—Si—NR—NR2 (silyl hydrazines) or 1,3,4,5,7,8-hexamethytetrasiliazane, wherein R and R? comprise at least one functional group selected from the group of a halogen, an organic group having one or more double bonds, an organic group having one or more triple bonds, an aliphatic alkyl group, a cyclical alkyl group, an aromatic group, an organosilicon group, an alkyamino group, or a cyclic group containing N or Si.

Abstract: A method of forming a tantalum nitride layer for integrated circuit fabrication is disclosed. In one embodiment, the method includes forming a tantalum nitride layer by chemisorbing a tantalum precursor and a nitrogen precursor on a substrate disposed in a process chamber. A nitrogen concentration of the tantalum nitride layer is reduced by exposing the substrate to a plasma annealing process. A metal-containing layer is then deposited on the tantalum nitride layer by a deposition process.

Abstract: A method and apparatus for a CVD chamber that provides uniform heat distribution, efficient precursor delivery, uniform distribution of process and inert chemicals, and thermal management of residues in the chamber and exhaust surfaces by changing the mechanical design of a single wafer thermal CVD chamber. The improvements include a processing chamber comprising a chamber body and a chamber lid defining a processing region, a substrate support disposed in the processing region, a gas delivery system mounted on the chamber lid, the gas delivery system comprising a lid, an adapter ring and two blocker plates that define a gas mixing region, and a face plate fastened to the adapter ring, a heating element positioned to heat the adapter ring to a desired temperature, and a temperature controlled exhaust system.