Abstract: A microelectronic device includes a substrate a platinum-containing layer over the substrate. The platinum-containing layer includes a first segment and a second segment adjacent to the first segment, and has a first surface and a second surface opposite the first surface closer to the substrate than the first surface. A first spacing between the first segment and the second segment at the first surface is greater than a second spacing between the first segment and the second segment at the second surface. A width of the first segment along the first surface is less than twice a thickness of the first segment, and the second spacing is less than twice the thickness of the first segment.

Abstract: In examples, an integrated circuit comprises a semiconductor die including a semiconductor substrate, a dielectric layer on the semiconductor substrate, and a metallization structure in the dielectric layer, in which the semiconductor substrate includes sensor circuitry coupled to the metallization structure, the dielectric layer having a sensing side facing away from the semiconductor substrate. The IC includes an insulation layer on the sensing side and a sensor terminal on the sensing side and coupled to the metallization structure. The IC device includes a restriction structure including an opening, in which the restriction structure encapsulates a fluid cavity on the sensing side and the sensor terminal is in the fluid cavity. The fluid cavity contains a functionalization material, configured to interact with a fluid in the fluid cavity to produce a signal detectable by the sensor circuitry via the sensor terminal.

Abstract: In some examples, a device comprises a substrate including a notch formed in a surface of the substrate and a semiconductor die positioned in the notch and including an electrochemical sensor on an active surface of the semiconductor die. The device also comprises a chemically inert member abutting the surface of the substrate and including an orifice in vertical alignment with the electrochemical sensor as a result of the semiconductor die being positioned in the notch. The device also comprises a compressed o-ring seal positioned between the chemically inert member and the active surface of the semiconductor die, the compressed o-ring seal circumscribing the electrochemical sensor.

Abstract: A microelectronic device includes a substrate a platinum-containing layer over the substrate. The platinum-containing layer includes a first segment and a second segment adjacent to the first segment, and has a first surface and a second surface opposite the first surface closer to the substrate than the first surface. A first spacing between the first segment and the second segment at the first surface is greater than a second spacing between the first segment and the second segment at the second surface. A width of the first segment along the first surface is less than twice a thickness of the first segment, and the second spacing is less than twice the thickness of the first segment.

Abstract: In some examples, a device comprises a substrate including a notch formed in a surface of the substrate and a semiconductor die positioned in the notch and including an electrochemical sensor on an active surface of the semiconductor die. The device also comprises a chemically inert member abutting the surface of the substrate and including an orifice in vertical alignment with the electrochemical sensor as a result of the semiconductor die being positioned in the notch. The device also comprises a compressed o-ring seal positioned between the chemically inert member and the active surface of the semiconductor die, the compressed o-ring seal circumscribing the electrochemical sensor.

Abstract: There is provided a method of patterning platinum on a substrate. A platinum layer is deposited on the substrate, and a patterned photoresist layer is formed over the platinum layer leaving partly exposed regions of the platinum layer. An aluminum layer is deposited over the partly exposed regions of the platinum layer. An alloy is formed of aluminum with platinum from the partly exposed regions. The platinum aluminum alloy is etched away leaving a remaining portion of the platinum layer to form a patterned platinum layer on the substrate. In an embodiment, a thin hard mask layer is deposited on the platinum layer on the semiconductor substrate before the patterned photoresist layer is formed.

Abstract: A wafer probe test system has a conductive needle configured to contact a conductive feature on a surface of a wafer, and a fluid probe having a multichannel tube, the fluid probe configured to engage the surface of the wafer to form a fluidic seal between a sensor face on the surface of the wafer and the conductive feature of the wafer, the multichannel tube having a first channel and a second channel configured to create a flow of fluid across the sensor face on the surface of the wafer.

Abstract: In examples, an apparatus comprises a substrate having opposite first and second surfaces. The substrate includes a first opening through the substrate. The substrate includes a first sealing layer covering an inner surface of the first opening, with the inner surface extending between the first and second surfaces. The substrate includes contact pads on the second surface. The apparatus also comprises a fluid sensor having a sensor surface facing the second surface and the first opening. The apparatus further includes metal interconnects coupled between the sensor surface and the contact pads. The apparatus also includes a second sealing layer between the second surface and the sensor surface, in which the second sealing layer surrounds the metal interconnects and includes a second opening below the first opening, and at least part of the sensor surface is exposed through the first and second openings.

Abstract: In one example, a semiconductor die comprises: a semiconductor substrate having a circuit formed therein; one or more metal layers on the semiconductor substrate, the one or more metal layers coupled to the circuit; a metal interface structure on the one or more metal layers, in which the metal interface structure has opposite first and second surfaces, and the first surface faces the one or more metal layers; and a dissolvable metal layer on the second surface.

Abstract: A modular titer plate assembly includes a multi-well plate, a sensor assembly, and a mainboard. The multi-well plate includes a two-dimensional array of wells. The sensor assembly is detachably mounted to the multi-well plate. The sensor assembly includes a two-dimensional array of sensors aligned with the two-dimensional array of wells. The mainboard is detachably mounted to the sensor assembly.

Abstract: In some examples, an integrated circuit comprises: a semiconductor die including a semiconductor substrate, a dielectric layer on the semiconductor substrate, and a metallization structure encapsulated in the dielectric layer, in which the semiconductor substrate includes a transistor having a first current terminal, a second current terminal, and a channel region between the first and second current terminals, and the dielectric layer has a sensing side facing away from the semiconductor substrate; an insulation layer on the sensing side; a sensor terminal on the sensing side and over the channel region; and a restriction structure including an opening and a rigid silicon-based fluidic structure, in which the silicon-based fluidic structure is on the sensing side and encapsulates a fluid cavity on the sensing side, the sensor terminal is in the fluid cavity, and the restriction structure is configured to transport a fluid by microfluidic diffusion.

Abstract: There is provided a method of patterning platinum on a substrate. A platinum layer is deposited on the substrate, and a patterned photoresist layer is formed over the platinum layer leaving partly exposed regions of the platinum layer. An aluminum layer is deposited over the partly exposed regions of the platinum layer. An alloy is formed of aluminum with platinum from the partly exposed regions. The platinum aluminum alloy is etched away leaving a remaining portion of the platinum layer to form a patterned platinum layer on the substrate. In an embodiment, a thin hard mask layer is deposited on the platinum layer on the semiconductor substrate before the patterned photoresist layer is formed.

Abstract: An integrated circuit (IC) fabrication tool and associated method for facilitating inline contactless sheet resistance measurement. In one arrangement, the tool comprises at least one main chamber, one or more processing chambers detachably coupled to the main chamber, each of the one or more processing chambers configured for effectuating a respective processing operation on a semiconductor wafer, and at least one sensor chamber detachably coupled to the at least one main chamber, the at least one sensor chamber having a contactless sensor assembly for sensing sheet resistance of a process layer of the semiconductor wafer based on eddy currents generated in the process layer.

Abstract: For sensing pH of a fluid, a heating apparatus of a semiconductor die controls a temperature of the fluid to a first temperature. A first voltage of a gate of a floating gate transistor of the semiconductor die is measured while the temperature of the fluid is at the first temperature. Also, the heating apparatus controls the temperature of the fluid to a second temperature that is different than the first temperature. A second voltage of the gate is measured while the temperature of the fluid is at the second temperature. The pH of the fluid is determined based on the first and second voltages, the first temperature and the second temperature.

Abstract: In examples, a method of manufacturing a fluid sensing package comprises coupling a semiconductor die to a first set of conductive terminals; positioning the semiconductor die within a socket, a fluid probe extending through a probe orifice in a lid of the socket; positioning a ring of the fluid probe on a fluid sensing portion of the semiconductor die by closing the lid of the socket; and using the fluid probe to apply fluid to an area of the fluid sensing portion circumscribed by the ring.

Abstract: A device includes a die with a protective overcoat and a substrate, the substrate comprising a first region and a second region that are spaced apart. The device also includes an isolation dielectric between the protective overcoat and the die. A pre-metal dielectric (PMD) barrier is between the isolation dielectric and the substrate, the PMD barrier having a first region that contacts the first region of the substrate and a second region that contacts the second region of the substrate, the first region and the second region of the PMD barrier being spaced apart. A through trench filled with a polymer dielectric extends between the first region and the second region of the substrate, and between the first region and the second region of the PMD barrier to contact the isolation dielectric.

Abstract: In described examples, a biosensor device has a porous membrane with a test region that contains a test analyte. A sensor die has an ion sensing field effect transistor (ISFET) with an ion sensitive gate element located in an active sensor surface of the sensor die. The active sensor surface is in contact with the porous membrane test region. A controller is coupled to the ISFET and an interface module is coupled to the controller to provide a human readable test result.

Abstract: The invention relates to kinase inhibitors, in particular inhibitors of protein kinases including the protein-tyrosine kinases LCK, ABL, SRC, KIT, SIK-family and/or their mutants. Although structurally similar to dasatinib, the kinase inhibitors of the invention can display one or more certain properties distinct to dasatinib. Also, the invention relates to pharmaceutical compositions that comprise one or more of the kinase inhibitors. The kinase inhibitors or pharmaceutical compositions of the invention may be used in the treatment of a disorder or condition, such as a proliferative disorder, for example, a leukaemia or solid tumour. The kinase inhibitors or pharmaceutical compositions may be used in a treatment regimen that corresponds to, is similar to or is distinct from that used with dasatinib for a corresponding disorder, and in particular may be used in a combination treatment regimen together with one or more additional therapeutic agents, such as immune-checkpoint inhibitors.

Abstract: The invention relates to a kinase inhibitor, in particular an inhibitor of protein kinases including the protein-tyrosine kinases LCK, ABL, SRC, KIT, SIK-family and/or their mutants. Although structurally similar to dasatinib, the kinase inhibitor of the invention displays, eg functional and ADMET properties distinct to dasatinib. Also, the invention relates to pharmaceutical compositions that comprise the kinase inhibitor, including those formulated for oral administration, such as in unit dose form that comprise particular ranges or amounts of the kinase inhibitor. The kinase inhibitor or pharmaceutical composition may be used in the treatment of a proliferative disorder, such as a leukaemia or solid tumour.

Abstract: A microelectronic device includes a metal layer on a first dielectric layer. An etch stop layer is disposed over the metal layer and on the dielectric layer directly adjacent to the metal layer. The etch stop layer includes a metal oxide, and is less than 10 nanometers thick. A second dielectric layer is disposed over the etch stop layer. The second dielectric layer is removed from an etched region which extends down to the etch stop layer. The etched region extends at least partially over the metal layer. In one version of the microelectronic device, the etch stop layer may extend over the metal layer in the etched region. In another version, the etch stop layer may be removed in the etched region. The microelectronic device is formed by etching the second dielectric layer using a plasma etch process, stopping on the etch stop layer.