Abstract: A chip fabricated from a semiconductor material is disclosed, which may include active devices located below a first depth from the chip back side, and a structure to remove heat from the active devices to the chip back side. The structure may include thermally conductive partial vias (TCPVs), which may include a recess with a depth, from the chip back side towards the active devices less than the first depth. Each TCPV may include a barrier layer deposited within the recess and deposited upon the back side of the chip. Each TCPV may also include a thermally conductive layer deposited upon the barrier layer. The structure may also include through-silicon vias (TSVs) electrically connected to active devices, extending from the back side to an active device side of the chip to conductively remove heat from the active devices to the back side of the chip.

Abstract: As disclosed herein, a method, executed by a computer, for integrated circuit timing variability reduction includes loading a netlist that corresponds to a chip design, where the chip design includes one or more circuits and a plurality of post-fill features, traversing a portion of the netlist corresponding to a circuit, determining a post-fill environment for the circuit from a plurality of post-fill features, and modeling a timing variance for the circuit based on the post-fill environment. The method may also include changing one or more post-fill features to achieve a targeted delay. The method may include generating a report of circuit timing and timing variances. One or more circuits can be concurrently traversed. The timing variance can be modeled with the use of a scaling factor for a standard timing variance. A computer system and computer program product corresponding to the method are also disclosed herein.

Abstract: Various embodiments include an integrated circuit having: at least one waveguide disposed in a low refractive index layer; a splitter connected to the at least one waveguide, the splitter consisting of at least two signal paths; an optical signal detector connected to an end of each of the at least two signal paths; and an electrical disconnect member connected to each optical signal detector.

Abstract: A structure and method of using the structure. The structure including an integrated circuit chip having a set of micro-channels; an electro-rheological coolant fluid filling the micro-channels; first and second parallel channel electrodes on opposite sides of at least one micro-channel, the first channel electrode connected to an output of an auto-compensating temperature control circuit, the second channel electrode connected to ground; the auto-compensating temperature control circuit comprising a temperature stable current source connected between a positive voltage rail and the output and having a temperature sensitive circuit connected between ground and the output, a leakage current of the temperature stable current source being essentially insensitive to temperature and a leakage current of the temperature sensitive circuit increasing with temperature.

Abstract: Various particular embodiments include a method of forming an integrated circuit (IC) device including: forming at least one thermoelectric cooling device over an upper surface of a handle wafer based upon a known location of an elevated temperature region in the IC device; forming a first oxide layer over the handle wafer covering the thermoelectric cooling device; forming a second oxide layer over a donor silicon wafer to form a donor wafer; bonding the donor wafer to the handle wafer at the first oxide layer and the second oxide layer, such that the second oxide layer contacts the first oxide layer on the handle wafer; and forming at least one semiconductor device over the donor silicon wafer side of the donor wafer, wherein the at least one thermoelectric cooling device is located proximate the at least one semiconductor device.

Abstract: A reactive metal optical security device for implementation in an optical network and/or system to provide a mechanism for disrupting the optical network and/or system. The security device includes a mirror comprising a reactive metal stack and configured to reflect an optical signal and receive an electrical signal. The security device further includes a semiconductor chip configured to send the electrical signal to the mirror.

Abstract: A structure and method of using the structure. The structure including an integrated circuit chip having a set of micro-channels; an electro-rheological coolant fluid filling the micro-channels; first and second parallel channel electrodes on opposite sides of at least one micro-channel, the first channel electrode connected to an output of an auto-compensating temperature control circuit, the second channel electrode connected to ground; the auto-compensating temperature control circuit comprising a temperature stable current source connected between a positive voltage rail and the output and having a temperature sensitive circuit connected between ground and the output, a leakage current of the temperature stable current source being essentially insensitive to temperature and a leakage current of the temperature sensitive circuit increasing with temperature.

Abstract: A structure and method of using the structure. The structure including an integrated circuit chip having a set of micro-channels; an electro-rheological coolant fluid filling the micro-channels; first and second parallel channel electrodes on opposite sides of at least one micro-channel, the first channel electrode connected to an output of an auto-compensating temperature control circuit, the second channel electrode connected to ground; the auto-compensating temperature control circuit comprising a temperature stable current source connected between a positive voltage rail and the output and having a temperature sensitive circuit connected between ground and the output, a leakage current of the temperature stable current source being essentially insensitive to temperature and a leakage current of the temperature sensitive circuit increasing with temperature.

Abstract: In an approach to fabricating a silicon on insulator wafer, one or more semiconductor device elements are implanted and one or more shallow trench isolations are formed on a top surface of a first semiconductor wafer. A first dielectric material layer is deposited over the top surface of the first semiconductor wafer, filling the shallow trench isolations. A dielectric material layer on a bottom surface of a second semiconductor wafer is bonded to a dielectric material layer on the top of the first semiconductor wafer and one or more semiconductor devices are formed on a top surface of the second semiconductor wafer. Then, one or more through silicon vias are created connecting the one or more semiconductor devices on the top surface of the second semiconductor wafer and the one or more semiconductor device elements on the top surface of the first semiconductor wafer.

Abstract: In a particular embodiment, a method of anticipatorily loading a page of memory is provided. The method may include, during execution of first program code using a first page of memory, collecting data for at least one attribute of the first page of memory, including collecting data about at least one next page of memory that interacts with the first page of memory for a historical topology attribute of the first page of memory. The method may also include, during execution of second program code using the first page of memory, determining a second page of memory to anticipatorily load based on the historical topology attribute of the first page of memory.

Abstract: A chip fabricated from a semiconductor material is disclosed. The chip may include active devices located below a first depth from a chip back side and a structure configured to remove heat from the chip. The structure may include microvias electrically insulated from the active devices and having a second depth, less than the first depth, from the back side towards the active devices. Each microvia may also have a fill material having a thermal conductivity greater than a semiconductor thermal conductivity. The structure may also include thermally conductive material regions on the back side of the chip in contact with sets of microvias. The structure may also include through-silicon vias electrically connected to the active devices, and extending from the back side to an active device side of the chip and configured to remove heat from the active devices to the back side of the chip.

Abstract: A heat conductive layer is deposited on a first surface of a wafer of semiconductor chips. The heat conductive layer is etched to form vias that expose through-electrodes on the first surface of each semiconductor chip. Conductive bumps are deposited on the through-electrodes on a second surface of each semiconductor chip. The semiconductor chips are stacked, wherein the conductive bumps of a second one of the semiconductor chips electrically contact the through-electrodes of a first one of the semiconductor chips through the vias of the first semiconductor chip and the conductive bumps of a third one of the semiconductor chips electrically contact the through-electrodes of the second semiconductor chip through the vias of the second semiconductor chip.

Abstract: Methods and circuits for disrupting integrated circuit function. The circuits include finite state machines connected to memory arrays. The finite state machines are sensitive to a predetermined sequence of addresses sent to the memory array or the time between a series of memory array errors detected by an error detection circuit. Upon detection of the pre-set addresses or errors the finite state machines either (i) enable or disable specific circuit functions or (ii) disrupt the operation of the integrated circuit.

Abstract: In one embodiment, the invention is a method and apparatus for secure and reliable computing. One embodiment of an end-to-end security system for protecting a computing system includes a processor interface coupled to at least one of an application processor and an accelerator of the computing system, for receiving requests from the at least one of the application processor and the accelerator, a security processor integrating at least one embedded storage unit and connected to the processor interface with a tightly coupled memory unit for performing at least one of: authenticating, managing, monitoring, and processing the requests, and a data interface for communicating with a display, a network, and at least one embedded storage unit for securely holding at least one of data and programs used by the at least one of the application processor and the accelerator.

Abstract: A method of creating a datasheet includes obtaining integrated circuit data from at least one data source, creating a data structure including the integrated circuit data obtained from the at least one data source, and creating a datasheet using data contained in the data structure. The datasheet is created in a human-readable format.

Abstract: A structure and method of using the structure. The structure including an integrated circuit chip having a set of micro-channels; an electro-rheological coolant fluid filling the micro-channels; first and second parallel channel electrodes on opposite sides of at least one micro-channel, the first channel electrode connected to an output of an auto-compensating temperature control circuit, the second channel electrode connected to ground; the auto-compensating temperature control circuit comprising a temperature stable current source connected between a positive voltage rail and the output and having a temperature sensitive circuit connected between ground and the output, a leakage current of the temperature stable current source being essentially insensitive to temperature and a leakage current of the temperature sensitive circuit increasing with temperature.

Abstract: A method of creating a datasheet includes obtaining integrated circuit data from at least one data source, creating a data structure including the integrated circuit data obtained from the at least one data source, and creating a datasheet using data contained in the data structure. The datasheet is created in a human-readable format.

Abstract: An integrated circuit includes logic regions and dynamically adjustable voltage controllers. A voltage controller connected to each logic region enables voltage adjustment while the chip is operating. Each voltage controller has a selector device connected to voltage input lines providing different voltages. A voltage sensor connected to the output of the selector device provides a supply voltage to one of the logic regions. A control circuit dynamically monitors the supply voltage, captures and stores a digital representation of the supply voltage during each cycle of a clock, and tracks variations over time, based on operation of the logic regions. When variations in the supply voltage exceed an operational threshold of one of the logic regions, the control circuit submits a request to a central controller. When the central controller grants permission, the control circuit dynamically adjusts the voltage by enabling the selector device to choose a different voltage input line.

Abstract: An integrated circuit includes logic regions and dynamically adjustable voltage controllers. A voltage controller connected to each logic region enables voltage adjustment while the chip is operating. Each voltage controller has a selector device connected to voltage input lines providing different voltages. A voltage sensor connected to the output of the selector device provides a supply voltage to one of the logic regions. A control circuit dynamically monitors the supply voltage, captures and stores a digital representation of the supply voltage during each cycle of a clock, and tracks variations over time, based on operation of the logic regions. When variations in the supply voltage exceed an operational threshold of one of the logic regions, the control circuit submits a request to a central controller. When the central controller grants permission, the control circuit dynamically adjusts the voltage by enabling the selector device to choose a different voltage input line.

Abstract: Disclosed are an object locator system, a method and a program storage device. In the embodiments, radio frequency identification (RFID) tags are on objects within a defined area and each RFID tag can be activated by an RF activation signal. When a request (e.g., a verbal or keyed-in request) to locate a specific object is received from a specific user, the required permission to locate the object is verified and, optionally, the identity of the specific user is authenticated. Once the required permission is verified and the identity of the specific user is authenticated, one of three RFID readers transmits an RF activation signal. RF response signals received back at the three RFID readers from the specific object's RFID tag are used to triangulate the position of the specific object. Once determined, the position is communicated (e.g., by map display, verbal message, or text message) to the specific user.