Patents by Inventor Sebastien Kerdiles

Sebastien Kerdiles has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7189632
    Abstract: Methods are provided for producing a transfer layer of a semiconductor material on a final substrate. In some embodiments, the transfer layer is produced on the final substrate by forming a layer of semiconductor material on an initial support, assembling that layer and a final substrate by metal bonding, and mechanically separating the initial support from the layer at a weak interface that initially attached the layer to the initial support. An intermediate substrate can be obtained which can be used to fabricate a variety of components such as light-emitting diodes or laser diodes. These techniques can produce a transfer layer on a final substrate and a recyclable initial support that can be detached from the transfer layer for recycling by dint of non-destructive mechanical release.
    Type: Grant
    Filed: December 22, 2003
    Date of Patent: March 13, 2007
    Assignees: S.O.I.Tec Silicon on Insulator Technologies S.A., Commissariat à l'Energie Atomique (CEA)
    Inventors: Sèbastien Kerdiles, Fabrice Letertre, Christophe Morales, Hubert Moriceau
  • Patent number: 7187162
    Abstract: A tool for disuniting two wafers, at least one of which is for use in fabricating substrates for microelectronics, optoelectronics, or optics, the tool comprising two gripper members suitable for being fixed temporarily to respective opposite faces of the two wafers that are united with each other, and a disuniting control device suitable for moving said members relative to each other. The tool is remarkable in that the disuniting control device comprises an actuator for positively displacing said gripper members and for inducing controlled flexing in at least one of said members. This makes it easier to disunite the wafers while reducing the risk of damaging them. The invention is applicable to disuniting wafers that have been weakened by implantation, that have been temporarily bonded together, etc.
    Type: Grant
    Filed: December 12, 2003
    Date of Patent: March 6, 2007
    Assignee: S.O.I.Tec Silicon on Insulator Technologies S.A.
    Inventors: Sebastien Kerdiles, Yves-Mathieu Le Vaillant
  • Publication number: 20070020947
    Abstract: A method for reducing roughness of an exposed surface of an insulator layer on a substrate, by depositing an insulator layer on a substrate wherein the insulator layer includes an exposed rough surface opposite the substrate; treating the first substrate to form a zone of weakness beneath the insulator layer; and smoothing the exposed rough surface of the insulator layer by exposure to a gas plasma in a chamber. The chamber contains therein a gas at a pressure of greater than 0.25 Pa but less than 30 Pa, and the gas plasma is created using a radio frequency generator applying to the insulator layer a power density greater than 0.6 W/cm2 but less than 10 W/cm2 for at least 10 seconds to less than 200 seconds. Substrate bonding and layer transfer may be carried out subsequently to transfer the thin layer of substrate to the insulator layer and to a second substrate.
    Type: Application
    Filed: July 5, 2006
    Publication date: January 25, 2007
    Inventors: Nicolas Daval, Sebastien Kerdiles, Cecile Aulnette
  • Publication number: 20060270187
    Abstract: A method for minimizing or avoiding contamination of a receiving handle wafer during transfer of a thin layer from a donor wafer. This method includes one step of providing a donor wafer and a receiving handle wafer, each having a first surface prepared for bonding and a second surface, with the donor layer including a zone of weakness that defines a thin layer of donor wafer material to be transferred to the receiving handle wafer. Next, at least one of the first surfaces is treated to provide increased bonding energy when the first surfaces are bonded together; the surfaces are then bonded together to form an intermediate multilayer structure; and the thin layer is transferred to the receiving handle wafer to form a final multilayer structure by detachment at the zone of weakness and removal of remaining material of the donor wafer.
    Type: Application
    Filed: May 25, 2005
    Publication date: November 30, 2006
    Inventors: Sébastien Kerdiles, Christophe Maleville, Fabrice Letertre, Olivier Rayssac
  • Publication number: 20060240642
    Abstract: The invention relates to a method of bonding together two wafers made of materials selected from semiconductor materials by providing two wafers each having a surface that is suitable for molecular bonding; and conducting plasma activation of at least one surface of one of the wafers by directing plasma species onto the surface(s) being activated while controlling activation parameters of the plasma to provide kinetic energy to the species sufficient to create a disturbed region of controlled thickness beneath the surface(s) being activated. Advantageously, the surface of each wafer is activated for optimum results while the controlling of the activation parameters also serves to control the maximum depth of the disturbed region in the surfaces.
    Type: Application
    Filed: November 23, 2005
    Publication date: October 26, 2006
    Inventor: Sebastien Kerdiles
  • Publication number: 20060228820
    Abstract: Methods are provided for producing a transfer layer of a semiconductor material on a final substrate. In some embodiments, the transfer layer is produced on the final substrate by forming a layer of semiconductor material on an initial support, assembling that layer and a final substrate by metal bonding, and mechanically separating the initial support from the layer at a weak interface that initially attached the layer to the initial support. An intermediate substrate can be obtained which can be used to fabricate a variety of components such as light-emitting diodes or laser diodes. These techniques can produce a transfer layer on a final substrate and a recyclable initial support that can be detached from the transfer layer for recycling by a non-destructive mechanical release.
    Type: Application
    Filed: June 7, 2006
    Publication date: October 12, 2006
    Inventors: Sebastien Kerdiles, Fabrice Letertre, Christophe Morales, Hubert Moriceau
  • Publication number: 20060197096
    Abstract: This invention provides a composite substrate that has a transparent mechanical support, for example of glass or quartz, a film or thin layer of monocrystalline semi-conductive material and an intermediate antireflective layer located between the thin layer or the semi-conductive film and the support. The composition of the intermediate antireflective layer varies between the support and the semi-conductive film, so that the refractive index similarly varies.
    Type: Application
    Filed: April 25, 2006
    Publication date: September 7, 2006
    Inventors: Sebastien Kerdiles, Yves-Mathieu Le Vaillant
  • Publication number: 20050048736
    Abstract: In order to transfer a layer comprising for example at least one monocrystalline material, which preferably but not exclusively is a semiconductor material, from a first substrate to a second substrate, an adhesive may be deposited either on the transfer layer or the second substrate in a way so as to avoid forming a bond with the first substrate. The adhesive may, for example, be deposited over a maximum of the whole surface of the layer, and the second substrate may be bonded with the layer via the adhesive. Once bonded, the first substrate is may be released from the transfer layer, e.g., through detachment. The adhesive may be deposited on the layer to the maximum extent of the edges(s) of the film or layer when the edge(s) is/are set back from the edge(s) of the first substrate, or set back from the edge(s) of the film or layer when the edge(s) is/are plumb with the edge(s) of the first substrate.
    Type: Application
    Filed: December 23, 2003
    Publication date: March 3, 2005
    Inventors: Sebastien Kerdiles, Severine Bressot, Fabrice Letertre
  • Publication number: 20050048739
    Abstract: Methods are provided for producing a transfer layer of a semiconductor material on a final substrate. In some embodiments, the transfer layer is produced on the final substrate by forming a layer of semiconductor material on an initial support, assembling that layer and a final substrate by metal bonding, and mechanically separating the initial support from the layer at a weak interface that initially attached the layer to the initial support. An intermediate substrate can be obtained which can be used to fabricate a variety of components such as light-emitting diodes or laser diodes. These techniques can produce a transfer layer on a final substrate and a recyclable initial support that can be detached from the transfer layer for recycling by dint of non-destructive mechanical release.
    Type: Application
    Filed: December 22, 2003
    Publication date: March 3, 2005
    Inventors: Sebastien Kerdiles, Fabrice Letertre, Christophe Morales, Hubert Moriceau
  • Publication number: 20040248379
    Abstract: A method for bonding semiconductor structures together is described. The technique includes providing a bonding surface on each of two semiconductor structures, brushing a bonding surface of at least one of the structures to remove contaminants and to activate hydroxyl groups on the bonding surface to enhance hydrophilicity and to facilitate molecular bonding of the structures, and joining the bonding surfaces together by molecular bonding to form a composite structure.
    Type: Application
    Filed: April 27, 2004
    Publication date: December 9, 2004
    Inventors: Christophe Maleville, Corinne Maunand Tussot, Olivier Rayssac, Sebastien Kerdiles, Benjamin Scarfogliere, Hubert Moriceau, Christophe Morales
  • Publication number: 20040166653
    Abstract: A tool for disuniting two wafers, at least one of which is for use in fabricating substrates for microelectronics, optoelectronics, or optics, the tool comprising two gripper members suitable for being fixed temporarily to respective opposite faces of the two wafers that are united with each other, and a disuniting control device suitable for moving said members relative to each other. The tool is remarkable in that the disuniting control device comprises an actuator for positively displacing said gripper members and for inducing controlled flexing in at least one of said members. This makes it easier to disunite the wafers while reducing the risk of damaging them. The invention is applicable to disuniting wafers that have been weakened by implantation, that have been temporarily bonded together, etc.
    Type: Application
    Filed: December 12, 2003
    Publication date: August 26, 2004
    Inventors: Sebastien Kerdiles, Yves-Mathieu Le Vaillant