Abstract: Transmitters having increased efficiency, such as may be useful in millimeter-wave devices. A semiconductor device, comprising a transmitter, comprising a modulator configured to receive a differential input signal having a first frequency and provide a differential modulated signal having the first frequency and a first clock phase; a series comprising one or more frequency multipliers, wherein the series of frequency multipliers is configured to receive the differential modulated signal and provide a differential second signal having a second frequency greater than the first frequency and having a second clock phase; and an output transformer configured to receive the differential second signal and transform the differential second signal to a single-ended output signal. Methods of using such transmitters. Systems for manufacturing devices comprising such transmitters.

Abstract: Power combiners having increased output power, such as may be useful in millimeter-wave devices. The power combiner comprise at least two channels, wherein each channel comprises a phase alignment circuit, wherein the phase alignment circuit comprises a first differential input subcircuit comprising a first inverter and a second inverter, and a second differential input subcircuit comprising a third inverter and a fourth inverter, wherein the first inverter, the second inverter, the third inverter, and the fourth inverter each comprise a PMOS transistor and an NMOS transistor each having an adjustable back gate bias voltage. By adjusting the back gate bias voltage, the phases of the signal through each channel may be aligned, which may increase the output power of the power combiner. Methods of increasing output power of such power combiners. Systems for manufacturing devices comprising such power combiners.

Abstract: Transmitters having increased efficiency, such as may be useful in millimeter-wave devices. A semiconductor device, comprising a transmitter, comprising a modulator configured to receive a differential input signal having a first frequency and provide a differential modulated signal having the first frequency and a first clock phase; a series comprising one or more frequency multipliers, wherein the series of frequency multipliers is configured to receive the differential modulated signal and provide a differential second signal having a second frequency greater than the first frequency and having a second clock phase; and an output transformer configured to receive the differential second signal and transform the differential second signal to a single-ended output signal. Methods of using such transmitters. Systems for manufacturing devices comprising such transmitters.

Abstract: Power combiners having increased output power, such as may be useful in millimeter-wave devices. The power combiner comprise at least two channels, wherein each channel comprises a phase alignment circuit, wherein the phase alignment circuit comprises a first differential input subcircuit comprising a first inverter and a second inverter, and a second differential input subcircuit comprising a third inverter and a fourth inverter, wherein the first inverter, the second inverter, the third inverter, and the fourth inverter each comprise a PMOS transistor and an NMOS transistor each having an adjustable back gate bias voltage. By adjusting the back gate bias voltage, the phases of the signal through each channel may be aligned, which may increase the output power of the power combiner. Methods of increasing output power of such power combiners. Systems for manufacturing devices comprising such power combiners.

Abstract: The disclosure provides a circuit structure including a current source including at least one FDSOI transistor having a back-gate terminal, wherein the current source generates a current proportionate to an absolute temperature of the circuit structure; a first current mirror electrically coupled to the current source and a gate terminal of a device transistor, wherein the first current mirror applies a gate bias to the device transistor based on a magnitude of the current, and wherein a source or drain terminal of the device transistor includes an output current of the circuit structure; and an adjustable voltage source coupled to the back-gate terminal of the at least one FDSOI transistor of the current source, wherein the adjustable voltage source applies a selected back-gate bias voltage to the back-gate terminal of the at least one FDSOI transistor to adjust the current to compensate for process variations of the device transistor.

Abstract: Power combiners having increased output power, such as may be useful in millimeter-wave devices. The power combiner comprise at least two channels, wherein each channel comprises a phase alignment circuit, wherein the phase alignment circuit comprises a first differential input subcircuit comprising a first inverter and a second inverter, and a second differential input subcircuit comprising a third inverter and a fourth inverter, wherein the first inverter, the second inverter, the third inverter, and the fourth inverter each comprise a PMOS transistor and an NMOS transistor each having an adjustable back gate bias voltage. By adjusting the back gate bias voltage, the phases of the signal through each channel may be aligned, which may increase the output power of the power combiner. Methods of increasing output power of such power combiners. Systems for manufacturing devices comprising such power combiners.

Abstract: We disclose apparatus which may provide power amplification in millimeter-wave devices with reduced size and reduced power consumption, and methods of using such apparatus. One such apparatus comprises an input transformer; a first differential pair of injection transistors comprising a first transistor and a second transistor; a first back gate voltage source configured to provide a first back gate voltage to the first transistor; a second back gate voltage source configured to provide a second back gate voltage to the second transistor; a second differential pair of oscillator core transistors comprising a third transistor and a fourth transistor, wherein the third transistor and the fourth transistor are cross-coupled; a third back gate voltage source configured to provide a third back gate voltage to the third transistor; a fourth back gate voltage source configured to provide a fourth back gate voltage to the fourth transistor; and an output transformer.

Abstract: We disclose frequency doublers for use in millimeter-wave devices. One such frequency doubler comprises at least one passive mixer comprising at least one of the following: at least one transistor configured to receive a back gate voltage; at least one first input driver circuit; and two second input driver circuits. We also disclose a method comprising determining a target output voltage of a frequency doubler comprising at least one passive mixer comprising at least one transistor configured to receive a back gate voltage; determining an output voltage of the frequency doubler; increasing a back gate voltage of the at least one transistor, in response to determining that the output voltage is below the target output voltage; and decreasing the back gate voltage of the at least one transistor, in response to determining that the output voltage is above the target output voltage.

Abstract: We disclose frequency doublers for use in millimeter-wave devices. One such frequency doubler comprises at least one passive mixer comprising at least one of the following: at least one transistor configured to receive a back gate voltage; at least one first input driver circuit; and two second input driver circuits. We also disclose a method comprising determining a target output voltage of a frequency doubler comprising at least one passive mixer comprising at least one transistor configured to receive a back gate voltage; determining an output voltage of the frequency doubler; increasing a back gate voltage of the at least one transistor, in response to determining that the output voltage is below the target output voltage; and decreasing the back gate voltage of the at least one transistor, in response to determining that the output voltage is above the target output voltage.

Abstract: We disclose apparatus which may provide power amplification in millimeter-wave devices with reduced size and reduced power consumption, and methods of using such apparatus. One such apparatus comprises an input transformer; a first differential pair of injection transistors comprising a first transistor and a second transistor; a first back gate voltage source configured to provide a first back gate voltage to the first transistor; a second back gate voltage source configured to provide a second back gate voltage to the second transistor; a second differential pair of oscillator core transistors comprising a third transistor and a fourth transistor, wherein the third transistor and the fourth transistor are cross-coupled; a third back gate voltage source configured to provide a third back gate voltage to the third transistor; a fourth back gate voltage source configured to provide a fourth back gate voltage to the fourth transistor; and an output transformer.

Abstract: We disclose apparatus which may provide power amplification in millimeter-wave devices with reduced size and reduced power consumption, and methods of using such apparatus. One such apparatus comprises an input transformer; a first differential pair of injection transistors comprising a first transistor and a second transistor; a first back gate voltage source configured to provide a first back gate voltage to the first transistor; a second back gate voltage source configured to provide a second back gate voltage to the second transistor; a second differential pair of oscillator core transistors comprising a third transistor and a fourth transistor, wherein the third transistor and the fourth transistor are cross-coupled; a third back gate voltage source configured to provide a third back gate voltage to the third transistor; a fourth back gate voltage source configured to provide a fourth back gate voltage to the fourth transistor; and an output transformer.

Abstract: We disclose apparatus which may provide power amplification in millimeter-wave devices with reduced size and reduced power consumption, and methods of using such apparatus. One such apparatus comprises an input transformer; a first differential pair of injection transistors comprising a first transistor and a second transistor; a first back gate voltage source configured to provide a first back gate voltage to the first transistor; a second back gate voltage source configured to provide a second back gate voltage to the second transistor; a second differential pair of oscillator core transistors comprising a third transistor and a fourth transistor, wherein the third transistor and the fourth transistor are cross-coupled; a third back gate voltage source configured to provide a third back gate voltage to the third transistor; a fourth back gate voltage source configured to provide a fourth back gate voltage to the fourth transistor; and an output transformer.

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to a fully depleted silicon on insulator power amplifier with unique biases and voltage standing wave ratio protection and methods of manufacture. The structure includes a pseudo-differential common source amplifier; first stage cascode devices connected to the pseudo-differential common source amplifier and protecting the pseudo-differential common source amplifier from an over stress; second stage cascode devices connected to the first stage cascode devices and providing differential outputs; and at least one loop receiving the differential outputs from the second stage cascode devices and feeding back the differential outputs to the second stage cascode devices.

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to a fully depleted silicon on insulator power amplifier with unique biases and voltage standing wave ratio protection and methods of manufacture. The structure includes a pseudo-differential common source amplifier; first stage cascode devices connected to the pseudo-differential common source amplifier and protecting the pseudo-differential common source amplifier from an over stress; second stage cascode devices connected to the first stage cascode devices and providing differential outputs; and at least one loop receiving the differential outputs from the second stage cascode devices and feeding back the differential outputs to the second stage cascode devices.

Abstract: A transmitter architecture having a single signal path or hardware to cover WCDMA/EDGE/GSM applications, and requires no SAW at the transmitter outputs. The transmitter architecture allows for a transmit convergence feature. A passive mixer with unique driver and furthermore using native devices available from the CMOS process for the mixer cores enables low voltage and low power design, low output noise and high linearity. A digital variable gain amplifier has the capability to cover wide output dynamic range operated from low supply voltage and interfaced digitally with the baseband circuit without DAC. A single transformer is used to combine the outputs from the WCDMA/EDGE and GSM drivers and subsequently convert the differential signal paths into a single-ended signal. RF switches are used to divert the output from the transformer to different bands and applications.

Abstract: A driver circuit for supplying a drive signal to a mixer circuit comprising a first and second circuit branch and an operational amplifier. The first circuit branch receives an input signal and a bias signal. The second circuit branch receives the input signal. The operational amplifier has a first input connected to a junction node of the first circuit branch and a second input connected to a junction node of the second circuit branch. The operational amplifier is arranged to provide an operational amplifier output signal a second component of the second circuit branch so that a voltage at the junction node of the second circuit branch is equal to a voltage at the junction node of the first circuit branch. The voltage is dependent on the input signal and providing the drive signal.

Abstract: Method and circuitry for controlling duty cycle of an input signal towards a desired value comprising a sequence of at least two inverters arranged in series and feedback circuitry. A first inverter is arranged to receive the input signal and a last inverter is arranged to output a signal having the same frequency as the input signal. The output signal is an adjusted version of the input signal. The feedback circuitry is arranged to receive the output signal and comprises a comparing and supplying means. The comparing means compares the output signal with a reference signal indicative of a desired value and generates a feedback signal based on the comparison of the output and reference signal. The supplying means supplies the feedback signal to adjust operating conditions of at least one of the inverters, such that the duty cycle of the output signal is controlled towards the desired value.

Abstract: An apparatus and method for generating complementary periodic signals for a mixer circuit is provided. The apparatus comprises first and second generation circuits each for generating a periodic signal with a transition time on each rising edge different than a transition time on each falling edge. Each of the first and second generation circuits has an output for supplying its periodic signal to a mixer such that each rising edge of a periodic signal from one of the circuits crosses each falling edge of a periodic signal from the other of the circuits at a crossing point below a turn on voltage of the mixer.

Abstract: Method and circuitry for controlling duty cycle of an input signal towards a desired value comprising a sequence of at least two inverters arranged in series and feedback circuitry. A first inverter is arranged to receive the input signal and a last inverter is arranged to output a signal having the same frequency as the input signal. The output signal is an adjusted version of the input signal. The feedback circuitry is arranged to receive the output signal and comprises a comparing and supplying means. The comparing means compares the output signal with a reference signal indicative of a desired value and generates a feedback signal based on the comparison of the output and reference signal. The supplying means supplies the feedback signal to adjust operating conditions of at least one of the inverters, such that the duty cycle of the output signal is controlled towards the desired value.

Abstract: A driver circuit for supplying a drive signal to a mixer circuit comprising a first and second circuit branch and an operational amplifier. The first circuit branch receives an input signal and a bias signal. The second circuit branch receives the input signal. The operational amplifier has a first input connected to a junction node of the first circuit branch and a second input connected to a junction node of the second circuit branch. The operational amplifier is arranged to provide an operational amplifier output signal a second component of the second circuit branch so that a voltage at the junction node of the second circuit branch is equal to a voltage at the junction node of the first circuit branch. The voltage is dependent on the input signal and providing the drive signal.