Abstract: A silver sintering preparation in the form of a silver sintering paste comprising 70 to 95 wt.-% of coated silver particles (A) and 5 to 30 wt.-% of organic solvent (B) or in the form of a silver sintering preform comprising 74.5 to 100 wt.-% of coated silver particles (A) and 0 to 0.5 wt.-% of organic solvent (B), wherein the coating of the coated silver particles (A) comprises silver acetylacetonate (silver 2,4-pentanedionate) and/or at least one silver salt of the formula CnH2n+1COOAg with n being an integer in the range of 7 to 10, and wherein the at least one silver salt is thermally decomposable at >160° C.

Abstract: A silver sintering preparation in the form of a silver sintering paste comprising 70 to 95 wt.-% of coated silver particles (A) and 5 to 30 wt.-% of organic solvent (B) or in the form of a silver sintering preform comprising 74.5 to 100 wt.-% of coated silver particles (A) and 0 to 0.5 wt.-% of organic solvent (B), wherein the coating of the coated silver particles (A) comprises silver acetylacetonate (silver 2,4-pentanedionate) and/or at least one silver salt of the formula CnH2n+1COOAg with n being an integer in the range of 7 to 10, and wherein the at least one silver salt is thermally decomposable at >160° C.

Abstract: A solvent-free electroconductive composition may be used to make electroconductive lines on a surface of a substrate or electroconductive plugs within via holes of a substrate. The solvent-free electroconductive composition is generally made of about 40 to about 95 wt % of a conductive component, about 4 to about 30 wt % of a polymer or oligomer comprising a reactive functional group, up to about 20 wt % of a monomeric diluent comprising a reactive functional group, and up to about 3 wt % of a curing agent. In some instances, the solvent-free electroconductive composition further includes up to about 3 wt % of a lubricating compound. Substrates made using solvent-free electroconductive compositions may be used in printed circuit boards, integrated circuits, solar cells, capacitors, resistors, thermistors, varistors, resonators, transducers, inductors, and multilayer ferrite beads.

Abstract: A solvent-free electroconductive composition may be used to make electroconductive lines on a surface of a substrate or electroconductive plugs within via holes of a substrate. The solvent-free electroconductive composition is generally made of about 40 to about 95 wt % of a conductive component, about 4 to about 30 wt % of a polymer or oligomer comprising a reactive functional group, up to about 20 wt % of a monomeric diluent comprising a reactive functional group, and up to about 3 wt % of a curing agent. In some instances, the solvent-free electroconductive composition further includes up to about 3 wt % of a lubricating compound. Substrates made using solvent-free electroconductive compositions may be used in printed circuit boards, integrated circuits, solar cells, capacitors, resistors, thermistors, varistors, resonators, transducers, inductors, and multilayer ferrite beads.

Abstract: A silver sintering preparation comprising: (A) 30 to 88 wt.-% of silver flake particles having a mean particle diameter (d50) in the range of >1 to 20 ?m, (B) 5 to 30 wt.-% of at least one silver precursor, (C) 1 to 10 wt.-% of an organic polymer system, and (D) 6 to 30 wt.-% of organic solvent, wherein the organic polymer system (C) is chemically essentially stable at temperatures <300° C. and forms a continuous phase together with the organic solvent (D).

Abstract: The invention is directed to a polyimide-based polymer thick film paste composition for forming a polyimide-based polymer thick film resistor, a process for forming the resistor and an electrical device containing a resistor formed using the paste composition The paste composition comprise a functional component, a polyimide, and an organic solvent and can be cured by heating.

Abstract: The invention is directed to a polyimide-based polymer thick film paste composition for forming a polyimide-based polymer thick film resistor, a process for forming the resistor and an electrical device containing a resistor formed using the paste composition The paste composition comprise a functional component, a polyimide, and an organic solvent and can be cured by heating.

Abstract: This invention is directed to polyimide-based polymer thick film compositions and particularly non-fluorinated polyimide-based polymer thick film compositions. These compositions are comprised of certain polyimide polymers and certain solvents. In some embodiments various functional components are added to the composition to provide compositions that can be used to form various elements of an electrical circuit.

Abstract: The invention is directed to a polyimide-based polymer thick film paste composition for forming a polyimide-based polymer thick film resistor, a process for forming the resistor and an electrical device containing a resistor formed using the paste composition The paste composition comprise a functional component, a polyimide, and an organic solvent and can be cured by heating.

Abstract: Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido) hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.

Abstract: The invention is directed to a polyimide-based polymer thick film paste composition for forming a polyimide-based polymer thick film resistor, a process for forming the resistor and an electrical device containing a resistor formed using the paste composition The paste composition comprise a functional component, a polyimide, and an organic solvent and can be cured by heating.

Abstract: This invention is directed to polyimide-based polymer thick film compositions and particularly non-fluorinated polyimide-based polymer thick film compositions. These compositions are comprised of certain polyimide polymers and certain solvents.

Abstract: The invention is directed to a paste composition and a process for forming a solderable polyimide-based polymer thick film conductor. The paste composition comprising an electrically conductive metal, a polyimide, an organosilicon compound and an organic solvent and can be cured by heating at a temperature of 320 to 380° C. The invention also provides an electrical device containing a solderable polyimide-based polymer thick film conductor formed using the paste composition.

Abstract: This invention provides a polymer thick film copper conductor composition for forming an electrical conductor and a method for using the polymer thick film copper conductor composition to form an electrical conductor in an electrical circuit. The method subjects the deposited thick film copper conductor composition to photonic sintering. The invention further provides electrical devices containing electrical conductors made from the polymer thick film copper conductor composition and also those formed by the method.

Abstract: This invention provides a polymer thick film copper conductor composition for forming a solderable and highly solder leach resistant electrical conductor and a method for using the polymer thick film copper conductor composition to form the electrical conductor in an electrical circuit. The method subjects the deposited thick film copper conductor composition to photonic sintering. The invention further provides electrical devices containing electrical conductors made from the polymer thick film copper conductor composition and also those formed by the method.

Abstract: This invention provides a polymer thick film copper conductor composition for forming an electrical conductor and a method for using the polymer thick film copper conductor composition to form an electrical conductor in an electrical circuit. The method subjects the deposited thick film copper conductor composition to photonic sintering. The invention further provides electrical devices containing electrical conductors made from the polymer thick film copper conductor composition and also those formed by the method.

Abstract: This invention provides a polymer thick film copper conductor composition for forming a solderable and highly solder leach resistant electrical conductor and a method for using the polymer thick film copper conductor composition to form the electrical conductor in an electrical circuit. The method subjects the deposited thick film copper conductor composition to photonic sintering. The invention further provides electrical devices containing electrical conductors made from the polymer thick film copper conductor composition and also those formed by the method.

Abstract: The invention is directed to a process for forming a solderable polyimide-based polymer thick film conductor in which a paste composition comprising an electrically conductive metal, a polyimide and an organic solvent is cured by heating at a temperature of 280 to 320° C. The invention is also provides an electrical device containing a solderable polyimide-based polymer thick film conductor formed by the process of the invention.

Abstract: The invention is directed to a paste composition and a process for forming a solderable polyimide-based polymer thick film conductor. The paste composition comprising an electrically conductive metal, a polyimide, an organosilicon compound and an organic solvent and can be cured by heating at a temperature of 320 to 380° C. The invention also provides an electrical device containing a solderable polyimide-based polymer thick film conductor formed using the paste composition.

Abstract: Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido) hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.