Abstract: A piezoelectric element includes a substrate, a first electrode, a first piezoelectric film, a second electrode, a second piezoelectric film, and a third electrode, in which both the first piezoelectric film and the second piezoelectric film have spontaneous polarizations aligned in a film thickness direction and directions of the spontaneous polarizations are the same, and in a case where in a hysteresis curve of one piezoelectric film, a coercive voltage Vcf+, a coercive voltage Vcf?, |Vcf+?Vcf?|=?Vcf, and the larger of an absolute value of Vcf+ and an absolute value of Vcf? is denoted by Vcf, and in a hysteresis curve of the other piezoelectric film, a coercive voltage Vcr+, a coercive voltage Vcr?, |Vcr+?Vcr?|=?Vcr, and the larger of an absolute value of Vcr+ and an absolute value Vcr? is denoted by Vcr, ?Vcr<?Vcf?0.2 and Vcr<Vcf?0.2 are satisfied.

Abstract: A piezoelectric element includes a substrate; and a first electrode, a first piezoelectric film, a second electrode, a second piezoelectric film, and a third electrode which are provided on the substrate in this order, in which both the first piezoelectric film and the second piezoelectric film contain PZT having a metal element M doped thereto, as a main component, one piezoelectric film of the first piezoelectric film and the second piezoelectric film has a spontaneous polarization aligned in a film thickness direction, and in a case where in a hysteresis curve showing polarization-voltage characteristics of the one piezoelectric film, a coercive voltage Vcf+ on a positive side and a coercive voltage Vcf? on a negative side, and in polarization-voltage characteristics of the other piezoelectric film, a coercive voltage Vcr+ on a positive side and a coercive voltage Vcr? on a negative sid, |Vcr++Vcr?|<|Vcf++Vcf?|?0.2 is satisfied.

Abstract: A piezoelectric element includes a substrate; and a first electrode, a first piezoelectric film, a second electrode, a second piezoelectric film, and a third electrode which are provided on the substrate in this order, in which both the first piezoelectric film and the second piezoelectric film contain a perovskite-type oxide containing Pb at an A site and containing Zr, Ti, and M at a B site as a main component, an M composition ratio in the first piezoelectric film is different from an M composition ratio in the second piezoelectric film, and polarization-electric field hysteresis measured for the first piezoelectric film with the first electrode grounded and the second electrode as a drive electrode, and polarization-electric field hysteresis measured for the second piezoelectric film with the second electrode grounded and the third electrode as a drive electrode are shifted in the same electric field direction with respect to origins thereof.

Abstract: A piezoelectric element includes a substrate; and a first electrode, a first piezoelectric film, a second electrode, a second piezoelectric film, and a third electrode which are provided on the substrate in this order, in which both the first piezoelectric film and the second piezoelectric film contain a perovskite-type oxide containing Pb Zr, Ti, and M, as a main component, Pb composition ratios in the perovskite-type oxides contained in the first piezoelectric film and the second piezoelectric film are different from each other, and polarization-electric field hysteresis measured for the first piezoelectric film with the first electrode grounded and the second electrode as a drive electrode, and polarization-electric field hysteresis measured for the second piezoelectric film with the second electrode grounded and the third electrode as a drive electrode are shifted in the same electric field direction with respect to origins thereof.

Abstract: To eliminate accumulation of air while preventing a decrease in pump efficiency, a pump is provided. The pump includes a rotary shaft, an impeller that is attached to the rotary shaft and that rotates with rotation of the rotary shaft, a casing that surrounds the rotary shaft, a shaft sealing device that seals a gap between the casing and the rotary shaft, and a baffle plate part that is located between the impeller and the shaft sealing device and attached to a rotating body. The baffle plate part extends in a direction that is inclined or orthogonal with respect to a surface orthogonal to an axial direction of the rotary shaft.

Abstract: The piezoelectric element is a piezoelectric element including, on a substrate in the following order, a lower electrode layer, a piezoelectric film containing a perovskite-type oxide as a main component, and an upper electrode layer, in which at least a region of the upper electrode layer closest to a side of the piezoelectric film is composed of an oxide conductive layer containing In, and regarding an interface region between the piezoelectric film and the oxide conductive layer of the upper electrode layer, in an intensity profile of binding energy, which is acquired by an X-ray photoelectron spectroscopy measurement, a peak intensity ratio ?/? satisfies ?/??0.25, wherein a is a peak intensity of binding energy derived from a 3d5/2 orbital of In bonded to oxygen, and ? is a peak intensity of binding energy derived from a 3d5/2 orbital of In bonded to an OH group.

Abstract: Regarding the piezoelectric laminate and the piezoelectric element, in the piezoelectric laminate including, on a substrate, a lower electrode layer and a piezoelectric film in this order, a seed layer consisting of a conductive oxide is provided between the lower electrode layer and the piezoelectric film, and the piezoelectric film contains a perovskite-type oxide represented by General Formula I, Pb1-y2+?Ay2{(Ti,Zr)1-x-y1NbxB1y1}O3??General Formula I here, A is an A site element, where it is one or more elements including at least La, B1 is a B site element, which is one or more divalent or trivalent elements, O is an oxygen element, and x, y1, y2, and ? satisfy 0.05<x?0.3, 0.2x?y1±y2?0.5x, 0?y1?0.15, 0?y2?0.15, and 0???0.2.

Abstract: In a piezoelectric element including, on a substrate in the following order, a lower electrode layer, a piezoelectric film, and an upper electrode layer, the upper electrode layer includes an oxide conductive layer, has an interface layer containing a constituent element of the oxide conductive layer and an OH group, between the piezoelectric film and the oxide conductive layer of the upper electrode layer, where the interface layer has an amorphous structure and has a thickness of 1 nm or more and 5 nm or less, and in a case where a peak intensity of binding energy derived from a 1s orbital of oxygen bonded to a metal is denoted as ?, and a peak intensity of binding energy derived from a 1s orbital of oxygen constituting the OH group is denoted as ?, a peak intensity ratio ?/? is 0.35 or more.

Abstract: The piezoelectric film is a piezoelectric film containing a perovskite-type oxide as a main component, in which a current-voltage profile showing a relationship between a voltage and a current that flows in a case where the voltage is applied has two maximal values, where the current-voltage profile is acquired in a case where the voltage is sweep-applied from ?40 V to +40 V at a first change rate of 10 kV/cm·sec while the piezoelectric film is sandwiched between a pair of electrode layers.

Abstract: There are provided a piezoelectric laminate, which include, on a substrate in the following order, a lower electrode layer and a piezoelectric film, in which the piezoelectric film contains a perovskite-type oxide, the piezoelectric film includes a first region in which the perovskite-type oxide contains, as a main component, a first perovskite crystal in which a first angle formed by a (100) plane orientation or a (001) plane orientation and a normal direction of a surface of the substrate is 5°˜30°, and includes a second region provided between the first region and the lower electrode layer, in which the perovskite-type oxide contains, as a main component, a second perovskite crystal in which a second angle formed by the (100) plane orientation or the (001) plane orientation and the normal direction is less than 5°, and a thickness of the second region is 30 nm or more.

Abstract: The optical thin film is provided on a substrate and includes, in order, from the substrate side, an interlayer, a silver-containing metal layer, and a dielectric layer, in which an anchor region including an oxide of an anchor metal is provided in an interface region of the silver-containing metal layer on a side close to the interlayer, a cap region including an oxide of the anchor metal is provided in an interface region of the silver-containing metal layer on a side close to the dielectric layer, a film thickness of the silver-containing metal layer is 6 nm or less, the silver-containing metal layer contains a high standard electrode potential metal, and a peak position of a concentration distribution of the high standard electrode potential metal in a film thickness direction of the silver-containing metal layer is positioned closer to the interlayer than a peak position of a silver concentration distribution.

Abstract: There are provided a substrate with a piezoelectric film and a piezoelectric element, including on a substrate in the following order, a lower electrode layer and a piezoelectric film, in which in a case where B is denoted as a B site element in a perovskite-type structure, the piezoelectric film includes, a first region containing a perovskite-type oxide represented by General Formula (1), Pb?BO3 (1), here 1???1.5, and a second region consisting of the same elements as elements in the first region and containing an oxide represented by General Formula (2), Pb?BO3 (2), here ?/3??<?, and the second region is provided on an outermost layer of the piezoelectric film opposite to the lower electrode layer.

Abstract: A piezoelectric laminate and a piezoelectric element have, on a substrate in the following order, a lower electrode layer and a piezoelectric film containing a perovskite-type oxide. The lower electrode layer includes a second layer arranged in a state of being in contact with the piezoelectric film and includes a first layer arranged on a side of the second layer from the substrate, where the first layer contains one or more of W, Mo, Nb, and Ta, as a main component, and the second layer contains Ir as a main component, where the thickness of the second layer is 50 nm or less.

Abstract: A piezoelectric laminate and a piezoelectric element have, on a substrate in the following order, a lower electrode layer, and a piezoelectric film containing a perovskite-type oxide. The lower electrode layer includes a first layer arranged in a state of being in contact with the substrate and includes a second layer arranged in a state of being in contact with the piezoelectric film, the first layer contains Ti or TiW as a main component, the second layer is a uniaxial alignment film which contains Ir as a main component and in which the Ir is aligned in a (111) plane, and a half width at half maximum of an X-ray diffraction peak from the (111) plane is 0.3° or more.

Abstract: In a laminated film, a resin substrate, an organic/inorganic multilayer, and a silver-containing metal layer having a thickness of 20 nm or less are laminated in this order, an anchor metal diffusion control layer having a Hamaker constant of 7.3×10?20 J or more is provided on the surface of the inorganic layer, an anchor region containing an oxide of an anchor metal having a surface energy which has a smaller difference with a surface energy of the silver-containing metal layer than a surface energy of the anchor metal diffusion control layer is provided between the anchor metal diffusion control layer and the silver-containing metal layer, and a cap region containing an oxide of the anchor metal is provided on a surface of the silver-containing metal layer that is opposite from a surface on a side closer to the anchor metal diffusion control layer.

Abstract: An antireflection film is provided on a substrate and includes an interlayer, a silver-containing metal layer containing silver, and a dielectric layer, which are laminated in this order on a side of a substrate, in which the interlayer is a multilayer film having at least two layers in which a layer of high refractive index having a relatively high refractive index and a layer of lower refractive index having a relatively low refractive index are alternately laminated, the dielectric layer has a surface exposed to air, and the dielectric layer is a multilayer film including a silicon-containing oxide layer, a magnesium fluoride layer, and an adhesion layer provided between the silicon-containing oxide layer and the magnesium fluoride layer and configured to increase adhesiveness between the silicon-containing oxide layer and the magnesium fluoride layer.

Abstract: Provided is an antireflection film that is formed by laminating an interlayer, a silver-containing metal layer containing silver, and a dielectric layer, in this order, on a substrate, in which the interlayer is a multilayer film having two or more layers, in which a layer of high refractive index having a relatively high refractive index and a layer of low refractive index having a relatively low refractive index are alternately laminated, and the dielectric layer has a surface to be exposed to air and is a multilayer film having two or more layers including an oxide layer and a fluorocarbon layer which is a self-assembled film that is formed by a silane coupling reaction to the oxide layer in this order.

Abstract: An antireflection film is formed by laminating an interlayer, a silver-containing metal layer containing silver, and a dielectric layer in this order from the substrate, an anchor region including an oxide of an anchor metal is provided between the silver-containing metal layer and the interlayer, a cap region including an oxide of the anchor metal included in the anchor region is provided between the silver-containing metal layer and the dielectric layer, a crystal grain size obtained by X-ray diffraction measurement in the silver-containing metal layer is less than 6.8 nm, and the anchor metal has a surface energy less than a surface energy of silver and greater than a surface energy of a layer of the interlayer closest to the silver-containing metal layer.

Abstract: This method for producing a transparent optical film includes a film formation step of forming a silver layer and a high standard electrode potential metal layer so as to be laminated on a substrate, the film formation step including a silver deposition step of forming the silver layer, at a thickness of 6 nm or less by vacuum deposition, and a high standard electrode potential metal deposition step of forming the high standard electrode potential metal layer formed of a high standard electrode potential metal having a higher standard electrode potential than that of silver by vacuum deposition, and an alloying step of forming a silver alloy layer by diffusing the high standard electrode potential metal within the silver layer by performing a heating treatment at a temperature of 50° C. or higher and 400° C. or lower.

Abstract: The antireflection film includes a dielectric multilayer film arranged on the substrate side and a fine uneven layer containing an alumina hydrate as a main component and provided to be laminated on the dielectric multilayer film. The dielectric multilayer film includes alternating layers of layers of high refractive index having a relatively high refractive index and layers of low refractive index having a relatively low refractive index, the dielectric multilayer film includes a barrier layer containing silicon nitride as one of the layer of high refractive index and the layer of low refractive index, and the barrier layer has a density of 2.7 g/cm3 or more and a thickness of 15 nm or more and 150 nm or less.